A model for the formation of donor centers in silicon layers implanted with erbium and oxygen ions (English)
- New search for: Aleksandrov, O. V.
- New search for: Zakhar’in, A. O.
- New search for: Aleksandrov, O. V.
- New search for: Zakhar’in, A. O.
In:
Semiconductors
;
36
, 11
;
1209-1214
;
2002
- Article (Journal) / Electronic Resource
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Title:A model for the formation of donor centers in silicon layers implanted with erbium and oxygen ions
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Contributors:Aleksandrov, O. V. ( author ) / Zakhar’in, A. O. ( author )
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Published in:Semiconductors ; 36, 11 ; 1209-1214
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Publisher:
- New search for: Nauka/Interperiodica
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Place of publication:Moscow
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Publication date:2002-11-01
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Size:6 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 36, Issue 11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1199
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Vadim Fedorovich Masterov, a scientist and a teacherIvanov, V. K. / Popov, B. P. et al. | 2002
- 1202
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International symposium on photoluminescence and electroluminescence of rare-earth elements in semiconductors and insulatorsTerukov, E. I. et al. | 2002
- 1204
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V. F. Masterov’s school and fullerene research at the department of experimental physics, St. Petersburg State Technical UniversityPrikhodko, A. V. / Konkov, O. I. et al. | 2002
- 1209
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A model for the formation of donor centers in silicon layers implanted with erbium and oxygen ionsAleksandrov, O. V. / Zakhar’in, A. O. et al. | 2002
- 1215
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Emission from rare-earth centers in (ZnTe:Yb):O/GaAsKonnov, V. M. / Loiko, N. N. / Sadof’ev, Yu. G. / Trushin, A. S. / Makhov, E. I. et al. | 2002
- 1221
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Temperature dependences of photoluminescence spectra of single-crystal Ca2GeO4:Cr4+ filmsGorshkov, O. N. / Demidov, E. S. / Dianov, E. M. / Kasatkin, A. P. / Lebedev, V. F. / Maksimov, G. A. / Tyurin, S. A. / Chigineva, A. B. / Chigirinskii, Yu. I. / Shushunov, A. N. et al. | 2002
- 1225
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Effect of surface state density on room temperature photoluminescence from Si-SiO2 structures in the range of band-to-band recombination in siliconEmel’yanov, A. M. / Sobolev, N. A. / Pizzini, S. et al. | 2002
- 1227
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Buried nanoscale damaged layers formed in Si and SiC crystals as a result of high-dose proton implantationKozlov, V. A. / Kozlovskii, V. V. / Titkov, A. N. / Dunaevskii, M. S. / Kryzhanovskii, A. K. et al. | 2002
- 1235
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The formation of beta -FeSi2 precipitates in microcrystalline SiTerukov, E.I. / Konkov, O.I. / Kudoyarova, V.K. / Gusev, O.B. / Davydov, V.Y. / Mosina, G.N. et al. | 2002
- 1235
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The formation of β-FeSi2 precipitates in microcrystalline SiTerukov, E. I. / Kon’kov, O. I. / Kudoyarova, V. Kh. / Gusev, O. B. / Davydov, V. Yu. / Mosina, G. N. et al. | 2002
- 1240
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Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structuresTerukov, E. I. / Gusev, O. B. / Kon’kov, O. I. / Undalov, Yu. K. / Stutzmann, M. / Janotta, A. / Mell, H. / Kleider, J. P. et al. | 2002
- 1244
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Photoluminescence and excitation features of Nd3+ ions in (La0.97Nd0.03)2S3 · 2Ga2O3 glassesBabaev, A. A. / Zobov, E. M. / Sokolov, V. V. / Sharapudinova, A. Kh. et al. | 2002
- 1248
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Conductivity and structure of Er-doped amorphous hydrogenated silicon filmsKon’kov, O. I. / Terukov, E. I. / Granitsina, L. S. et al. | 2002
- 1252
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Nature of impurity centers of rare-earth metals and self-organization processes in a-Si:H filmsMezdrogina, M. M. / Trapeznikova, I. N. / Terukov, E. I. / Nasredinov, F. S. / Seregin, N. P. / Seregin, P. P. et al. | 2002
- 1260
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The influence of sinks of intrinsic point defects on phosphorus diffusion in SiAleksandrov, O. V. et al. | 2002
- 1267
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Possibility of observing Bose-Einstein condensation in semiconductors via Mössbauer spectroscopy using the 67Zn isotopeNemov, S. A. / Seregin, N. P. / Irkaev, S. M. et al. | 2002
- 1270
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Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)Lebedev, A. A. / Kozlovski, V. V. / Strokan, N. B. / Davydov, D. V. / Ivanov, A. M. / Strel’chuk, A. M. / Yakimova, R. et al. | 2002
- 1276
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Kinetic theory of negative magnetoresistance as an alternative to weak localization in semiconductorsKaminskii, V. É. et al. | 2002
- 1283
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The influence of adsorbate on the work function and penetrability of the surface potential barrier of GaAs(110) single crystalAsalkhanov, Yu. I. / Abarykov, V. N. et al. | 2002
- 1288
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ZnMnSe/ZnSSe Type-II semimagnetic superlattices: Growth and magnetoluminescence propertiesToropov, A. A. / Lebedev, A. V. / Sorokin, S. V. / Solnyshkov, D. D. / Ivanov, S. V. / Kop’ev, P. S. / Buyanova, I. A. / Chen, W. M. / Monemar, B. et al. | 2002
- 1294
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Ordering of nanostructures in a Si/Ge0.3Si0.7/Ge system during molecular beam epitaxyCirlin, G. E. / Egorov, V. A. / Sokolov, L. V. / Werner, P. et al. | 2002
- 1299
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Effect of fullerene on the photogeneration and transport of charge carriers in triphenylamine-containing polyimidesAleksandrova, E. L. et al. | 2002
- 1303
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Flattening of dynamic dielectric phase grating and single-mode lasing under the conditions of transverse oscillations of luminous fluxAstakhova, A. P. / Danilova, T. N. / Imenkov, A. N. / Kolchanova, N. M. / Yakovlev, Yu. P. et al. | 2002
- 1308
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High power single-mode ( lambda =1.3-1.6 mu m) laser diodes based on quantum well InGaAsP/InP heterostructuresLeshko, A.Y. / Lyutetskii, A.V. / Pikhtin, N.A. / Slipchenko, S.O. / Sokolova, Z.N. / Fetisova, N.V. / Golikova, E.G. / Ryaboshtan, Y.A. / Tarasov, I.S. et al. | 2002
- 1308
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High power single-mode (λ=1.3–1.6 μm) laser diodes based on quantum well InGaAsP/InP heterostructuresLeshko, A. Yu. / Lyutetskii, A. V. / Pikhtin, N. A. / Slipchenko, S. O. / Sokolova, Z. N. / Fetisova, N. V. / Golikova, E. G. / Ryaboshtan, Yu. A. / Tarasov, I. S. et al. | 2002
- 1315
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High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substratesMikhrin, S. S. / Zhukov, A. E. / Kovsh, A. R. / Maleev, N. A. / Vasil’ev, A. P. / Semenova, E. S. / Ustinov, V. M. / Kulagina, M. M. / Nikitina, E. V. / Soshnikov, I. P. et al. | 2002
- 1315
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High efficiency ( eta D>80%) long wavelength ( lambda >1.25 mu m) quantum dot diode lasers on GaAs substratesMikhrin, S.S. / Zhukov, A.E. / Kovsh, A.R. / Maleev, N.A. / Vasilev, A.P. / Semenova, E.S. / Ustinov, V.M. / Kulagina, M.M. / Nikitina, E.V. / Soshnikov, I.P. et al. | 2002