Electrical switching of the topological anomalous Hall effect in a non-collinear antiferromagnet above room temperature (English)
- New search for: Liu, Z. Q.
- New search for: Chen, H.
- New search for: Wang, J. M.
- New search for: Liu, J. H.
- New search for: Wang, K.
- New search for: Feng, Z. X.
- New search for: Yan, H.
- New search for: Wang, X. R.
- New search for: Jiang, C. B.
- New search for: Coey, J. M. D.
- New search for: MacDonald, A. H.
- New search for: Liu, Z. Q.
- New search for: Chen, H.
- New search for: Wang, J. M.
- New search for: Liu, J. H.
- New search for: Wang, K.
- New search for: Feng, Z. X.
- New search for: Yan, H.
- New search for: Wang, X. R.
- New search for: Jiang, C. B.
- New search for: Coey, J. M. D.
- New search for: MacDonald, A. H.
In:
Nature Electronics
;
1
, 3
;
172-177
;
2018
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Electrical switching of the topological anomalous Hall effect in a non-collinear antiferromagnet above room temperature
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Contributors:Liu, Z. Q. ( author ) / Chen, H. ( author ) / Wang, J. M. ( author ) / Liu, J. H. ( author ) / Wang, K. ( author ) / Feng, Z. X. ( author ) / Yan, H. ( author ) / Wang, X. R. ( author ) / Jiang, C. B. ( author ) / Coey, J. M. D. ( author )
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Published in:Nature Electronics ; 1, 3 ; 172-177
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Publisher:
- New search for: Nature Publishing Group UK
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Place of publication:London
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Publication date:2018-03-01
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Size:6 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 1, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 149
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20 years of nanotube transistors| 2018
- 150
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Quantum gates scale upVarnava, Christiana et al. | 2018
- 151
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Security in reconfigurabilityLee, Michael et al. | 2018
- 152
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Organic semiconductor crystals go large and fastVarnava, Christiana et al. | 2018
- 153
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Deep learning spots the defectLee, Michael et al. | 2018
- 154
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Electrical switching of the anomalous Hall effectSürgers, Christoph et al. | 2018
- 156
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Stretchable sensors don’t feel the strainSalowitz, Nathan Picchietti et al. | 2018
- 158
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A new stage for flexible nanotube devicesPeng, Lian-Mao et al. | 2018
- 160
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Wearable sweat sensorsBariya, Mallika / Nyein, Hnin Yin Yin / Javey, Ali et al. | 2018
- 172
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Electrical switching of the topological anomalous Hall effect in a non-collinear antiferromagnet above room temperatureLiu, Z. Q. / Chen, H. / Wang, J. M. / Liu, J. H. / Wang, K. / Feng, Z. X. / Yan, H. / Wang, X. R. / Jiang, C. B. / Coey, J. M. D. et al. | 2018
- 178
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Self-induced topological protection in nonlinear circuit arraysHadad, Yakir / Soric, Jason C. / Khanikaev, Alexander B. / Alù, Andrea et al. | 2018
- 183
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Stretchable temperature-sensing circuits with strain suppression based on carbon nanotube transistorsZhu, Chenxin / Chortos, Alex / Wang, Yue / Pfattner, Raphael / Lei, Ting / Hinckley, Allison Claire / Pochorovski, Igor / Yan, Xuzhou / To, John W.-F. / Oh, Jin Young et al. | 2018
- 191
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Flexible CMOS integrated circuits based on carbon nanotubes with sub-10 ns stage delaysTang, Jianshi / Cao, Qing / Tulevski, George / Jenkins, Keith A. / Nela, Luca / Farmer, Damon B. / Han, Shu-Jen et al. | 2018
- 197
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Hardware-intrinsic security primitives enabled by analogue state and nonlinear conductance variations in integrated memristorsNili, Hussein / Adam, Gina C. / Hoskins, Brian / Prezioso, Mirko / Kim, Jeeson / Mahmoodi, M. Reza / Bayat, Farnood Merrikh / Kavehei, Omid / Strukov, Dmitri B. et al. | 2018
- 203
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Author Correction: Robust memristors based on layered two-dimensional materialsWang, Miao / Cai, Songhua / Pan, Chen / Wang, Chenyu / Lian, Xiaojuan / Zhuo, Ye / Xu, Kang / Cao, Tianjun / Pan, Xiaoqing / Wang, Baigeng et al. | 2018
- 204
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How we made the Li-ion rechargeable batteryGoodenough, John B. et al. | 2018