Positron study of defects in GaAs (English)
National licence
- New search for: Misheva, M.
- New search for: Pasajov, G.
- New search for: Tubmev, G.
- New search for: Yakimova, R.
- New search for: Misheva, M.
- New search for: Pasajov, G.
- New search for: Tubmev, G.
- New search for: Yakimova, R.
In:
New Developments in Semiconductor Physics
;
232-238
;
1988
- Article/Chapter (Book) / Electronic Resource
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Title:Positron study of defects in GaAs
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Contributors:
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Published in:Lecture Notes in Physics ; 301 ; 232-238
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Publisher:
- New search for: Springer Berlin Heidelberg
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Place of publication:Berlin, Heidelberg
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Publication date:1988-01-01
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Size:7 pages
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ISBN:
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ISSN:
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DOI:
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Type of media:Article/Chapter (Book)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents eBook
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Integer quantum hall effectHajdu, J. et al. | 1988
- 19
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Theory of the energy loss rate of hot electrons in 2D systemsVass, Erich et al. | 1988
- 26
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The transport problemNettel, S. et al. | 1988
- 39
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Cyclotron resonance of quasi-two-dimensional polaronsDevreese, J. T. / Peeters, F. M. et al. | 1988
- 55
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On the concentration dependence of the thermal activation energy of impurities in semicondectorsPödör, B. et al. | 1988
- 61
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The use of hydrostatic pressure and alloying to introduce deep levels in the forbidden gap of InSb and GaASStradling, R. A. et al. | 1988
- 75
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Electronic structure of complex defects in siliconLeite, José R. / Assali, Lucy V. C. / Gomes, Vivili M. S. et al. | 1988
- 95
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Electron microscopy in semiconductor physicsHeydenreich, J. et al. | 1988
- 115
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Determination of the lateral defect distribution by SDLTS in GaAsDózsa, László / Tóth, Attila L. et al. | 1988
- 120
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Formation of ribbon-like defects during low-temperature annealing of Czochralski-grown siliconReiche, Manfred et al. | 1988
- 126
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Band-edge offsets in semiconductor heterojunctionsHeinrich, H. et al. | 1988
- 143
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Defect dynamics in crystalline and amorphous siliconPantelides, Sokrates T. et al. | 1988
- 147
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On the diffusion of oxygen in a silicon crystalSnyder, Lawrence C. / Corbett, James W. / Deák, Peter / Wu, Rongzhi et al. | 1988
- 157
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Hexagonal site interstitial related states in siliconPapp, G. / Boguslawski, P. / Baldereschi, A. et al. | 1988
- 163
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The diffusion and electronic structure of hydrogen in siliconDeák, Peter / Snyder, Lawrence C. / Corbett, James W. et al. | 1988
- 175
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Spectroscopic studies of point defects in silicon and germaniumGrimmeiss, H. G. / Kleverman, M. / Bergman, K. / Montelius, L. et al. | 1988
- 201
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Deep levels in Cz-Si due to heat treatment at 600...900 °CSchmalz, K. / Kirscht, F. -G. et al. | 1988
- 211
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Interpretation of the electric field dependent thermal emission data of deep trapsPavelka, T. / Ferenczi, G. et al. | 1988
- 216
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Electrochemical characterization of GaAs and its multilayer structure materialsRui-wu, Peng / Mao-min, Luo / Zhou-cheng, Wang / Yong-ging, Ding / Zi-yao, Chen et al. | 1988
- 232
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Positron study of defects in GaAsMisheva, M. / Pasajov, G. / Tubmev, G. / Yakimova, R. et al. | 1988
- 239
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Deep level profiling technique in the semiconductor of MIS structureLysenko, V. S. / Nazarov, A. N. / Rudenko, T. E. et al. | 1988
- 244
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Transition metal impurities in siliconAmmerlaan, C. A. J. / Gregorkiewicz, T. et al. | 1988
- 262
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Electronic properties of pairs of shallow acceptors with iron or manganese in siliconGehlhoff, W. / Irmscher, K. / Kreissl, J. et al. | 1988
- 268
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MOCVD technologyLedebo, Lars et al. | 1988
- 281
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Epitaxial growth of PBTE doping superlattices on (111) BaF2 and (100) GaAsTranta, B. / Clemens, H. et al. | 1988
- 286
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Energy distribution of interface states in GaAs-Cr/Au Schottky contacts obtained from I–V characteristicsHorváth, Zs. J. et al. | 1988
- 294
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Surface work function transients of tunnel SIO2-SI structuresMizsei, J. / Zolomy, I. et al. | 1988