Focused ion beam micromilling of GaN photonic devices with gas enhanced etching techniques (English)
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- New search for: Hung, W C
- New search for: Wang, T
- New search for: Lin, Hung-Cheng
- New search for: Chen, Guan-Ting
- New search for: Chyi, Jen-Inn
- New search for: Cullis, A G
- New search for: Hung, W C
- New search for: Wang, T
- New search for: Lin, Hung-Cheng
- New search for: Chen, Guan-Ting
- New search for: Chyi, Jen-Inn
- New search for: Cullis, A G
In:
Microscopy of Semiconducting Materials
7
;
423-426
;
2005
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ISSN:
- Article/Chapter (Book) / Electronic Resource
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Title:Focused ion beam micromilling of GaN photonic devices with gas enhanced etching techniques
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Contributors:Hung, W C ( author ) / Wang, T ( author ) / Lin, Hung-Cheng ( author ) / Chen, Guan-Ting ( author ) / Chyi, Jen-Inn ( author ) / Cullis, A G ( author )
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Published in:Microscopy of Semiconducting Materials , 7 ; 423-426Springer Proceedings in Physics ; 107, 7 ; 423-426
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Publisher:
- New search for: Springer Berlin Heidelberg
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Place of publication:Berlin, Heidelberg
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Publication date:2005-01-01
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Size:4 pages
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ISBN:
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ISSN:
-
DOI:
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Type of media:Article/Chapter (Book)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents eBook
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Structural properties of GaN quantum dotsDaudin, B / Rouvière, J -L / Jalabert, D / Coraux, J / Favre-Nicolin, V / Renevier, H / Cho, M H / Chung, K B / Moon, D W / Proietti, M G et al. | 2005
- 13
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Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changesLaak, N K / Oliver, R A / Kappers, M J / McAleese, C / Humphreys, C J et al. | 2005
- 17
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Investigation of InxGa1−x N islands with electron microscopyPretorius, A / Yamaguchi, T / Schowalter, M / Kröger, R / Kübel, C / Hommel, D / Rosenauer, A et al. | 2005
- 21
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First stage of nucleation of GaN on (0001) sapphireKwon, Y B / Je, J H / Ruterana, P / Nouet, G et al. | 2005
- 25
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In GaN-GaN quantum wells: their luminescent and nano-structural propertiesBarnard, J S / Graham, D M / Smeeton, T M / Kappers, M J / Dawson, P / Godfrey, M / Humphreys, C J et al. | 2005
- 29
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Evolution of InGaN/GaN nanostructures and wetting layers during annealingOliver, Rachel A / Laak, Nicole K / Kappers, Menno J / Humphreys, Colin J et al. | 2005
- 33
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Origins and reduction of threading dislocations in GaN epitaxial layersMahajan, S et al. | 2005
- 45
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Oxygen segregation to nanopipes in gallium nitrideHawkridge, M / Cherns, D et al. | 2005
- 51
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Strain relaxation in (Al,Ga)N/GaN heterostructuresVennéguès, P / Bethoux, J M / Bougrioua, Z / Azize, M / Mierry, P / Tottereau, O et al. | 2005
- 55
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A TEM Study of A1N Interlayer Defects in AlGaN/GaN HeterostructuresCherns, P D / McAleese, C / Kappers, M J / Humphreys, C J et al. | 2005
- 59
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Reduction of threading dislocation density using in-situ SiNx interlayersDatta, R / Kappers, M J / Barnard, J S / Humphreys, C J et al. | 2005
- 63
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The nucleation structure for cracks in AlGaN epitaxial layersMurray, R T / Parbrook, P J / Hill, G / Ross, I M et al. | 2005
- 67
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Microstructural and optical characterisation of InN layers grown by MOCVDSingh, P / Ruterana, P / Nouet, G / Jain, A / Redwing, J M / Wojdak, M et al. | 2005
- 71
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Structural properties of InN thin films grown with variable growth conditions on GaN/Al2O3 by plasma-assisted MBEDelimitis, A / Komninou, Ph / Kehagias, Th / Karakostas, Th / Dimakis, E / Georgakilas, A / Nouet, G et al. | 2005
- 75
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Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substratesSaravanan, S / Keim, E G / Krijnen, G J M / Elwenspoek, M et al. | 2005
- 79
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Characterization and structuring of nitride-based heterostructures for vertical-cavity surface-emitting lasersKröger, R / Kruse, C / Dennemarck, J / Hommel, D / Rosenauer, A et al. | 2005
- 83
-
Characterization of defects in ZnS and GaNDeneen, J / Kumar, S / Perrey, C R / Carter, C B et al. | 2005
- 89
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Use of moire fringe patterns to map relaxation in SiGe on insulator structures fabricated on SIMOX substratesDomenicucci, A / Bedell, S / Roy, R / Sadana, D K / Mocuta, A et al. | 2005
- 93
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TEM measurement of the epitaxial stress of Si/SiGe lamellae prepared by FIBCabié, M / Benassayag, G / Rocher, A / Ponchet, A / Hartmann, J M / Fournel, F et al. | 2005
- 97
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Strain relaxation of SiGe/Si heterostructures by helium ion implantation and subsequent annealing: Helium precipitates acting as dislocation sourcesHueging, Norbert / Luysberg, Martina / Urban, Knut / Buca, Dan / Hollaender, Bernd / Mantl, Siegfried / Morschbacher, Matcio J / Fichtner, Paulo F P / Loo, Roger / Caymax, Matty et al. | 2005
- 107
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Local compositional analysis of GeSi/Si nanoclusters by scanning Auger microscopyMaximov, G A / Nikolitchev, D E / Filatov, D O et al. | 2005
- 111
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A study of processed and unprocessed dual channel Si/SiGe MOSFET device structures using FIB and TEMChang, A C K / Norris, D J / Ross, I M / Cullis, A G / Olsen, S H / O’Neill, A G et al. | 2005
- 117
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Novel TEM method for large-area analysis of misfit dislocation networks in semiconductor heterostructuresSpiecker, E / Schöne, J / Rajagopalan, S / Jäger, W et al. | 2005
- 131
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Beta to alpha transition and defects on SiC on Si grown by CVDMorales, F M / Förster, Ch / Ambacher, O / Pezoldt, J et al. | 2005
- 135
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Strain relaxation and void reduction in SiC on Si by Ge predepositionMorales, F M / Weih, P / Wang, Ch / Stauden, Th / Ambacher, O / Pezoldt, J et al. | 2005
- 139
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Defect generation in high In and N content GaInNAs quantum wells: unfaulting of Frank dislocation loopsHerrera, M / González, D / Lozano, J G / Hopkinson, M / Gutierrez, M / Navaretti, P / Liu, H Y / García, R et al. | 2005
- 143
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Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxyFay, M W / Han, Y / Novikov, S V / Edmonds, K W / Wang, K / Gallagher, B L / Campion, R P / Foxon, C T / Brown, P D et al. | 2005
- 147
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TEM determination of the local concentrations of substitutional and interstitial Mn and antisite defects in ferromagnetic GaMnAsGlas, F / Patriarche, G / Thevenard, L / Lemaître, A et al. | 2005
- 151
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First-principles calculations of 002 structure factors for electron scattering in strained InxGa1−xAsRosenauer, A / Schowalter, M / Glas, F / Lamoen, D et al. | 2005
- 155
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Structural characterisation of MBE grown zinc-blende Ga1−xMnxN/GaAs(001) as a function of Ga fluxHan, Y / Fay, M W / Brown, P D / Novikov, S V / Edmonds, K W / Gallagher, B L / Campion, R P / Foxon, C T et al. | 2005
- 159
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Magic matching in semiconductor heterojunctionsPécz, B / Barna, Á / Heera, V / Skorupa, W et al. | 2005
- 163
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Changes in plasmon peak position in a GaAs/Tn0.2Ga0.8As structureBeanland, R / Sánchez, A M / Papworth, A J / Gass, M H / Goodhew, P J et al. | 2005
- 167
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Investigation of the electrical activity of dislocations in ZnO epilayers by transmission electron holographyMüller, E / Kruse, P / Gerthsen, D / Kling, R / Waag, A et al. | 2005
- 171
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A TEM study of Mn-doped ZnO layers deposited by RF magnetron sputtering on (0001) sapphireAbouzaid, M / Ruterana, P / Nouet, G / Liu, C / Yun, F / Xiao, B / Cho, S-J / Moon, Y-T / Morkoç, H et al. | 2005
- 177
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Aberration-corrected HREM/STEM for semiconductor researchHetherington, C J D / Cockayne, D J H / Doole, R C / Hutchison, J L / Kirkland, A I / Titchmarsh, J M et al. | 2005
- 183
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Spherical aberration correction and exitplane wave function reconstruction: Synergetic tools for the atomic-scale imaging of structural imperfections in semiconductor materialsTillmann, K / Thust, A / Houben, L / Luysberg, M / Lentzen, M / Urban, K et al. | 2005
- 191
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Strain mapping from HRTEM imagesGalindo, P L / Yáñez, A / Pizarro, J / Guerrero, E / Ben, T / Molina, S I et al. | 2005
- 195
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Quantification of the influence of TEM operation parameters on the error of HREM image matchingPizarro, J / Guerrero, E / Galindo, P / Yañez, A / Ben, T / Molina, S I et al. | 2005
- 199
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ConceptEM: a new method to quantify solute segregation to interfaces or planar defect structures by analytical TEM and applications to inversion domain boundaries in doped zinc oxideWalther, T / Rečnik, A / Daneu, N et al. | 2005
- 203
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Electron holography of doped semiconductors: when does it work and is it quantitative?Dunin-Borkowski, R E / Twitchett, A C / Midgley, P A / McCartney, M R / Kasama, T / Cooper, D / Somodi, P K et al. | 2005
- 213
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Why does a p-doped area show a higher contrast in electron holography than a n-doped area of the same dopant concentration?Lenk, A / Muehle, U / Lichte, H et al. | 2005
- 217
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Interference electron microscopy of reverse-biased p-n junctionsFazzini, P F / Merli, P G / Pozzi, G / Ubaldi, F et al. | 2005
- 221
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Off-axis electron holography of focused ion beam milled GaAs and Si p-n junctionsCooper, D / Twitchett, A C / Farrer, I / Ritchie, D A / Dunin-Borkowski, R E / Midgley, P A et al. | 2005
- 225
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Towards quantitative electron holography of electrostatic potentials in doped semiconductorsSomodi, P K / Dunin-Borkowski, R E / Twitchett, A C / Barnes, C H W / Midgley, P A et al. | 2005
- 229
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Three-dimensional analysis of the dopant potential of a silicon p-n junction by holographic tomographyTwitchett, A C / Yates, T J V / Somodi, P K / Newcomb, S B / Dunin-Borkowski, R E / Midgley, P A et al. | 2005
- 233
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Ab initio computation of the mean inner Coulomb potential for technologically important semiconductorsSchowalter, M / Rosenauer, A / Lamoen, D / Kruse, P / Gerthsen, D et al. | 2005
- 239
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Electron beam induced deposition of position and size controlled structures on the nanometre scaleFuruya, K / Mitsuishi, K / Shimojo, M / Song, M / Tanaka, M / Takeguchi, M et al. | 2005
- 243
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The structure of coherent and incoherent InAs/GaAs quantum dotsZhi, D / Hÿtch, M J / Dunin-Borkowski, R E / Midgley, P A / Pashley, D W / Joyce, B A / Jones, T S et al. | 2005
- 247
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Electron microscopy and optical spectroscopy of single InAs/InP quantum dotsChithrani, D / Perovic, D D / Williams, R L / Lefebvre, J / Poole, P J / Aers, G C et al. | 2005
- 251
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Vertical correlation-anticorrelation transition in InAs/GaAs quantum dot structures grown by molecular beam epitaxyGutiérrez, M / Hopkinson, M / Herrera, M / González, D / García, R et al. | 2005
- 255
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Effect of annealing on anticorrelated InGaAs/GaAs quantum dotsGutiérrez, M / Hopkinson, M / Tartakovskii, A I / Skolnick, M S / Herrera, M / González, D / García, R et al. | 2005
- 259
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Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectraSánchez, A M / Gass, M H / Papworth, A J / Beanland, R / Drouot, V / Goodhew, P J et al. | 2005
- 263
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Structural analysis of the effects of a combined InAlAs-InGaAs capping layer in 1.3-μm InAs quantum dotsTey, C M / Cullis, A G / Liu, H Y / Ross, I M / Hopkinson, M et al. | 2005
- 267
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Microstructural studies of InAs/GaAs self-assembled quantum dots grown by selective area molecular beam epitaxyLin, J C C / Ross, I M / Fry, P W / Tartakoskii, A I / Kolodka, R S / Hogg, R / Hopkinson, M / Cullis, A G / Skolnick, M S et al. | 2005
- 271
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Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum ringsBen, T / Sánchez, A M / Molina, S I / Granados, D / García, J M / Kret, S et al. | 2005
- 275
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In distribution in InGaAs quantum wells and quantum islandsLitvinov, D / Gerthsen, D / Rosenauer, A / Passow, T / Grün, M / Klingshirn, C / Hetterich, M et al. | 2005
- 279
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Activation energy for surface diffusion in GaInNAs quantum wellsHerrera, M / González, D / Lozano, J G / Hopkinson, M / Gutierrez, M / Navaretti, P / Liu, H Y / García, R et al. | 2005
- 283
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Growth and surface structure of silicon nanowires observed in real time in the electron microscopeRoss, F M / Tersoff, J / Kodambaka, S / Reuter, M C et al. | 2005
- 287
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Self-catalytic growth of gallium nitride nanoneedles under Garich conditionsWong, Andrew S W / Ho, Ghim W / Costa, Pedro M F J / Oliver, Rachel A / Humphreys, Colin J et al. | 2005
- 291
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Nanocontacts fabricated by focused ion beam: characterisation and application to nanometre-sized materialsHernández, F / Casals, O / Vilà, A / Morante, J R / Romano-Rodriguez, A / Abid, M / Abid, J- P / Valizadeh, S / Hjort, K / Collin, J- P et al. | 2005
- 295
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Cross-sectional studies of epitaxial growth of InP and GaP nanowires on Si and GeVerheijen, M A / Bakkers, E P A M / Balkenende, A R / Roest, A L / Wagemans, M M H / Kaiser, M / Wondergem, H J / Graat, P C J et al. | 2005
- 299
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Quantitative measurements of the inhomogeneous strain field of stacked self-assembled InAs/InP(001) quantum wires by the Peak Finding MethodBen, T / Molina, S I / García, R / Fuster, D / González, M U / González, L / González, Y / Kret, S et al. | 2005
- 303
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Measurement of the mean inner potential of ZnO nanorods by transmission electron holographyMüller, E / Kruse, P / Gerthsen, D / Rosenauer, A / Schowalter, M / Lamoen, D / Kling, R / Waag, A et al. | 2005
- 307
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Quantum effects in band gap-modulated amorphous carbon superlatticesStolojan, V / Moreau, P / Goringe, M J / Silva, S Ravi P et al. | 2005
- 311
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Structure of rolled-up semiconductor nanotubesJin-Phillipp, N Y / Deneke, Ch / Thomas, J / Kelsch, M / Songmuang, R / Stoffel, M / Schmidt, O G et al. | 2005
- 315
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Defects and interfaces in nanoparticlesPerrey, C R / Deneen, J / Carter, C B et al. | 2005
- 319
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TEM characterization of magnetic Sm- and Co-nanocrystals in SiCBiskupek, J / Kaiser, U / Lichte, H / Lenk, A / Pasold, G / Witthuhn, W et al. | 2005
- 323
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Microscopy of nanoparticles for semiconductor devicesDeneen, J / Perrey, C R / Ding, Y / Bapat, A / Campbell, S A / Kortshagen, U / Carter, C B et al. | 2005
- 327
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Structural and electrophysical properties of a nanocomposite based upon the Si-SiO2 systemSorokin, L M / Sokolov, V I / Kalmykov, A E / Grigoryev, L V et al. | 2005
- 339
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Research highlights and impacts upon industry for nanoelectronics in the university system of TaiwanWu, You-Lin / Hwang, Huey-Liang / Tsai, Chuen-Horng et al. | 2005
- 343
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TEM investigations of epitaxial high-α dielectrics on siliconBugiel, E / Osten, H J / Fissel, A / Kirfel, O / Czernohorsky, M et al. | 2005
- 347
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Damage layer in silica-based low-k material induced by the patterning plasma process studied by energy-filtered TEMRichard, O / Iacopi, F / Tőkei, Zs / Bender, H et al. | 2005
- 351
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Measurement of field-emission properties of a single crystal silicon emitter using scanning electron microscopyCheng, T C / Hsueh, H T / Huang, W J / Chang, M N / Wu, J S / Kung, S C et al. | 2005
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Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted siliconStowe, D J / Fraser, K J / Galloway, S A / Senkader, S / Falster, R J / Wilshaw, P R et al. | 2005
- 359
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On the mechanism of {113}-defect formation in SiFedina, L I / Song, S A / Chuvilin, A L / Gutakovskii, A K / Latyshev, A V et al. | 2005
- 363
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The evolution of low defect density structures in silicon-on-sapphire thin films during post-ion implantation heat treatmentsMcKenzie, W R / Domyo, H / Ho, T / Munroe, P R et al. | 2005
- 367
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HREM study of an epitaxial growth defectRenard, A / Domengès, B et al. | 2005
- 371
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Resonant Raman microscopy of stress in silicon-based microelectronicsBonera, E / Fanciulli, M et al. | 2005
- 375
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TEM study of silicon implanted with fluorine and boron applied to piezoresistor manufacturingWzorek, M / Kątcki, J / Ratajczak, J / Jaroszewicz, B / Domański, K / Grabiec, P et al. | 2005
- 379
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Silicides for advanced CMOS devicesLauwers, A / Kittl, J A / Dal, M J H / Chamirian, O / Pawlak, M A / Torregiani, C / Liu, J. / Benedetti, A / Richard, O / Bender, H et al. | 2005
- 389
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Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaNDaele, B / Tendeloo, G / Ruythooren, W / Derluyn, J / Leys, M R / Germain, M et al. | 2005
- 393
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Dynamics of Au Adatoms on Electron-Irradiated Rough Si SurfacesTorigoe, K / Ohno, Y / Ichihashi, T / Takeda, S et al. | 2005
- 397
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Corrosion of FIB-milled Cu during air exposureBender, H / Richard, O / Marcke, P / Drijbooms, C et al. | 2005
- 403
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FIB applications for semiconductor device failure analysisDonnet, D M / Roberts, H et al. | 2005
- 409
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A method for 3D failure analysis using a dedicated FIB-STEM systemKamino, T / Yaguchi, T / Konno, M / Hashimoto, T / Ohnishi, T / Umemura, K et al. | 2005
- 413
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Failure analysis studies in pseudomorphic SiGe channel p-MOSFET devicesChang, A C K / Ross, I M / Norris, D J / Cullis, A G / Tang, Y T / Cerrina, C / Evans, A G R et al. | 2005
- 417
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TEM specimen preparation technique for III–V semiconductor devices by using a novel FIB-Ar ion milling methodTanabe, K / Matsuda, T / Sasaki, H / Iwase, F et al. | 2005
- 423
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Focused ion beam micromilling of GaN photonic devices with gas enhanced etching techniquesHung, W C / Wang, T / Lin, Hung-Cheng / Chen, Guan-Ting / Chyi, Jen-Inn / Cullis, A G et al. | 2005
- 427
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An organic two dimensional photonic crystal microcavity processed by focused ion beam millingHung, Wen-Chang / Adawi, A M / Dean, R / Cadby, A / Connolly, L G / Tahraoui, A / Lidzey, D G / Cullis, A G et al. | 2005
- 433
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Failure analysis of degraded (In,Ga)P/GaAs heterojunction bipolar transistors by TEMKirmse, H / Neumann, W / Zeimer, U / Pazirandeh, R / Oesterle, W et al. | 2005
- 437
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Strain measurements of ULSI devices using LACBED with TSUPREM modeled displacementsKenda, A / Cerva, H / Pongratz, P / Hierlemann, M / Liebmann, R et al. | 2005
- 441
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Electron holography for visualisation of different doped areas in silicon-germanium heterojunction bipolar transistorsMuehle, U / Lenk, A / Tilke, A T / Wagner, C / Dahl, C / Lichte, H et al. | 2005
- 445
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Ar sputter shadow method (ASSM) - a novel way to overcome the charging effect during AES bond pad analysisLo, Hui-Min / Luo, Jian-Shing / Russell, Jeremy D et al. | 2005
- 451
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Challenges and opportunities of Ångstrom-level analysisBatson, P E et al. | 2005
- 459
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Sub-Ångstrom and 3-dimensional STEM for semiconductor researchLupini, A R / Chisholm, M F / Varela, M / Benthem, K / Borisevich, A Y / Peng, Y / Sides, W H / Luck, J T / Pennycook, S J et al. | 2005
- 463
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Cathodoluminescence studies of AlGaAs/GaAs core-shell nanowiresGustafsson, Anders / Sköld, Niklas / Seifert, Werner / Samuelson, Lars et al. | 2005
- 467
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Carrier diffusion lengths of (In,Ga)As, GaAs and (In,Ga)(As,N) quantum wells studied by spatially resolved cathodoluminescenceJahn, U / Flissikowski, T / Grahn, H T / Hey, R / Wiebicke, E / Bluhm, A K / Miguel-Sánchez, J / Guzmán, A et al. | 2005
- 471
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An analysis of the alpha parameter used for extracting surface recombination velocity in EBIC measurementsOng, Vincent K S / Kurniawan, Oka et al. | 2005
- 475
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The effects of boundary conditions on dopant region imaging in scanning electron microscopyFerroni, M / Merli, P G / Morandi, V et al. | 2005
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A cross-sectional scanning tunneling microscopy study of GaSb/GaAs nanostructuresTimm, R / Lenz, A / Grabowski, J / Eisele, H / Dähne, M et al. | 2005
- 483
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Atomistic structure of spontaneously-ordered GaInP alloy revealed by cross-sectional scanning tunneling microscopy and polarized cathodoluminescence spectroscopyOhno, Yutaka et al. | 2005
- 487
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Carrier distribution in quantum nanostructures studied by scanning capacitance microscopyGiannazzo, F / Raineri, V / Mirabella, S / Impellizzeri, G / Priolo, F / Fedele, M / Mucciato, R et al. | 2005
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Mapping of the effective electron mass in III–V semiconductorsGass, M H / Sanchez, A M / Papworth, A J / Bullough, T J / Beanland, R / Chalker, P R et al. | 2005
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Reconstruction of images of surface height in scanning electron microscopyWalker, C G H / Gomati, M M / Romanovsky, V et al. | 2005
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Low energy scanning analytical microscopy (LeSAM) for Auger and low voltage SEM imaging of semiconductorsRomanovsky, V / El-Gomati, M / Wells, T / Day, J et al. | 2005
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The electric field and dopant distribution in p-i-n structures observed by ionisation potential (dopant contrast) microscopy in the HRSEMGrunbaum, E / Barkay, Z / Shapira, Y / Barnham, K / Bushnell, D B / Ekins-Daukes, N J / Mazzer, M / Wilshaw, P R et al. | 2005
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Localized energy levels associated with dislocations in ZnSe revealed by polarized CL spectroscopy under light illuminationOhno, Yutaka et al. | 2005
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Electron microscopy characterisation of ZnS:Cu:Cl phosphorsŁaszcz, A / Kątcki, J / Ratajczak, J / Płuska, M / Cie, M et al. | 2005
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Resistive contrast in R-EBIC from thin filmsDurose, K / Tatsuoka, H et al. | 2005
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A diode model for SEM-REBIC contrast in ZnO varistorsWojcik, A G / Wojcik, L E et al. | 2005
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The effect of barrier height variations in alloyed Al-Si Schottky barrier diodes on secondary electron contrast of doped semiconductorsZaggout, F / El-Gomati, M et al. | 2005