Ion beam mixing for ohmic contact formation ton-Type GaAs (English)
National licence
- New search for: Jie, Zhao
- New search for: Thompson, D. A.
- New search for: Jie, Zhao
- New search for: Thompson, D. A.
In:
Journal of Electronic Materials
;
17
, 3
;
249-254
;
1988
- Article (Journal) / Electronic Resource
-
Title:Ion beam mixing for ohmic contact formation ton-Type GaAs
-
Contributors:Jie, Zhao ( author ) / Thompson, D. A. ( author )
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Published in:Journal of Electronic Materials ; 17, 3 ; 249-254
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Publisher:
- New search for: Springer-Verlag
-
Place of publication:New York
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Publication date:1988-05-01
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Size:6 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 17, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 207
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Growth of WSi2 in phosphorous-implanted W/«Si» couplesMa, E. / Lim, B. S. / Nicolet, M-A. / Alvi, N. S. / Hamdi, A. H. et al. | 1988
- 213
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Application of selective CVD tungsten for low contact resistance via filling to aluminum multilayer interconnectionRang, S. / Chow, R. / Wilson, R. H. / Gorowitz, B. / Williams, A. G. et al. | 1988
- 217
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Growth of device quality GaAs by chemical beam epitaxyChiu, T. H. / Tsang, W. T. / Ditzenberger, J. A. / Tu, C. W. / Ren, F. / Wu, C. S. et al. | 1988
- 223
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A complete quantitative model of the isothermal vapor phase epitaxy of (Hg,Cd)TeDjuric, Zoran / Djinovic, Zoran / Lazic, Zarko / Piotrowski, Jozef et al. | 1988
- 229
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Deposition, post-deposition annealing, and characterization of epitaxial Ge films grown on Si(100) by pyrolysis of GeH4Green, M. L. / Ali, Y. S. / Brasen, D. / Nakahara, S. et al. | 1988
- 239
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Influence of V/III variation on AlxGa1-xAs quantum well lasers grown by metalorganic chemical vapor depositionWaters, R. G. / Hill, D. S. et al. | 1988
- 243
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Sputtered dielectric films for GaAs diffusion masksRoedel, R. J. / Erkaya, H. H. / Edwards, J. L. et al. | 1988
- 249
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Ion beam mixing for ohmic contact formation ton-Type GaAsJie, Zhao / Thompson, D. A. et al. | 1988
- 255
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On the carrier profiling of GaAsSb/GaAs heterostructuresZhao, J. H. / Li, A. Z. / Schlesinger, T. E. / Milnes, A. G. et al. | 1988