A comparison of Rutherford backscattering spectroscopy and X-ray diffraction to determine the composition of thick InGaN epilayers (English)
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In:
International Conference on Nitride Semiconductors, 4
;
41-44
;
2001
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ISSN:
- Conference paper / Print
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Title:A comparison of Rutherford backscattering spectroscopy and X-ray diffraction to determine the composition of thick InGaN epilayers
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Contributors:Srinivasan, S. ( author ) / Liu, R. ( author ) / Bertram, F. ( author ) / Ponce, F.A. ( author ) / Tanaka, S. ( author ) / Omiya, H. ( author ) / Nakagawa, Y. ( author )
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Published in:Physica Status Solidi (B) - Basic Research ; 228, 1 ; 41-44
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Publisher:
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Publication date:2001
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Size:4 Seiten
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ISSN:
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Coden:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:Indium , epitaxiale Schicht , Röntgenbeugung , RBS (Rutherford-Rückstreuung) , Spektrometrie , zweiachsige Spannung , Gitterkonstante , Korrelation , Vergleich , A3-B5-Verbindung , Al2O3 , Aluminiumverbindung , Amaryl , Aufdampfen , Aufdampfschicht , Beschichten , Beschichtungsmethode , Keramik , CVD-Beschichten , Verformbarkeit , Beugung (Strahl) , Edelmetallverbindung , Edelstein , Elastizität , Fabrikation , Fertigungsprozess
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