High power temperature-insensitive 1.3 micron InAs/InGaAs/GaAs quantum dot lasers (English)
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In:
Semiconductor Science and Technology
;
20
, 5
;
340-342
;
2005
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ISSN:
- Article (Journal) / Print
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Title:High power temperature-insensitive 1.3 micron InAs/InGaAs/GaAs quantum dot lasers
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Contributors:Mikhrin, S.S. ( author ) / Kovsh, A.R. ( author ) / Krestnikov, I.L. ( author ) / Kozhukhov, A.V. ( author ) / Livshits, D.A. ( author ) / Ledentsov, N.N. ( author ) / Shernyakov, Y.M. ( author ) / Novikov, I.I. ( author ) / Maximov, M.V. ( author ) / Ustinov, V.M. ( author )
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Published in:Semiconductor Science and Technology ; 20, 5 ; 340-342
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Publisher:
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Publication date:2005
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Size:3 Seiten, 3 Bilder, 7 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 20, Issue 5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 335
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Capacitance study of selectively doped SiGe/Si heterostructuresAntonova, I V / Obodnikov, V I / Kagan, M S / Troeger, R T / Ray, S K / Kolodzey, J et al. | 2005
- 340
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High power temperature-insensitive 1.3 (micro)m InAs-InGaAs-GaAs quantum dot lasersMikhrin, S.S. et al. | 2005
- 340
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High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasersMikhrin, S S / Kovsh, A R / Krestnikov, I L / Kozhukhov, A V / Livshits, D A / Ledentsov, N N / Shernyakov, Yu M / Novikov, I I / Maximov, M V / Ustinov, V M et al. | 2005
- 340
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High power temperature-insensitive 1.3 mum InAs/InGaAs/GaAs quantum dot lasersMikhrin, S. S. / Kovsh, A. R. / Krestnikov, I. L. / Kozhukhov, A. V. / Livshits, D. A. / Ledentsov, N. N. / Shernyakov, Y. M. / Novikov, I. I. / Maximov, M. V. / Ustinov, V. M. et al. | 2005
- 340
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High power temperature-insensitive 1.3 micron InAs/InGaAs/GaAs quantum dot lasersMikhrin, S.S. / Kovsh, A.R. / Krestnikov, I.L. / Kozhukhov, A.V. / Livshits, D.A. / Ledentsov, N.N. / Shernyakov, Y.M. / Novikov, I.I. / Maximov, M.V. / Ustinov, V.M. et al. | 2005
- 343
-
A novel two-step chemical passivation process for CdZnTe detectorsWenbin, Sang / Kunshu, Wang / Jiahua, Min / Jianyong, Teng / Qi, Zhang / Yongbiao, Qian et al. | 2005
- 347
-
Phonon transmission in III–V semiconductor superlattices and alloysAntonyuk, Vadim B / Larsson, Magnus / Mal'shukov, A G / Chao, K A et al. | 2005
- 353
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Effects of rapid thermal annealing on optical properties of GaNxP1−x alloys grown by solid source molecular beam epitaxyIzadifard, M / Buyanova, I A / Bergman, J P / Chen, W M / Utsumi, A / Furukawa, Y / Wakahara, A / Yonezu, H et al. | 2005
- 357
-
Parametric generation of a mid-infrared mode in semiconductor waveguides using a surface diffraction gratingAfonenko, A A / Ya Aleshkin, V / Dubinov, A A et al. | 2005
- 363
-
Donor activation and damage in Si–SiO2 from low-dose, low-energy ion implantation studied via electrical transport in MOSFETsMcCamey, D R / Francis, M / McCallum, J C / Hamilton, A R / Greentree, A D / Clark, R G et al. | 2005
- 369
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Determination of the Mn concentration in GaMnAsZhao, L X / Campion, R P / Fewster, P F / Martin, R W / Ber, B Ya / Kovarsky, A P / Staddon, C R / Wang, K Y / Edmonds, K W / Foxon, C T et al. | 2005
- 374
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Effect of the implantation temperature on lattice damage of Be+-implanted GaNPastor, D / Cuscó, R / Artús, L / González-Díaz, G / Fernández, S / Calleja, E et al. | 2005
- 378
-
Nature and energy structure of impurity and intrinsic defects in V-doped Cd1−xHgxTeGnatenko, Yu P / Faryna, I O / Bukivskij, P M / Shigiltchoff, O A / Gamernyk, R V / Paranchych, S Yu et al. | 2005
- 389
-
Thermal stability of metallizations on GaN/AlxGa1−xN/GaN heterostructuresReadinger, E D / Robinson, J A / Mohney, S E / Therrien, R et al. | 2005
- 398
-
Annealing effects on the properties of copper oxide thin films prepared by chemical depositionSerin, Necmi / Serin, Tülay / Horzum, Şeyda / Çelik, Yasemin et al. | 2005
- 402
-
Interlocking mechanism for the fabrication of closed single-walled semiconductor microtubesMendach, S / Kipp, T / Welsch, H / Heyn, Ch / Hansen, W et al. | 2005
- 406
-
Lateral n–i–p junction characterization using laser microscopyMuscat, S / Nash, G R / Hall, R S / Smith, S J / Bartlett, C J / Nash, K J / Jefferson, J H / Buckle, L / Emeny, M T / Ashley, T et al. | 2005
- 412
-
High current effects in double heterojunction bipolar transistorsYee, Marcus / Houston, Peter A et al. | 2005
- 418
-
Monte Carlo simulations of asymmetry multiple transit region Gunn diodesTeoh, Y P / Dunn, G M / Priestley, N / Carr, M et al. | 2005
- 423
-
Analysis of quasi double gate method for performance prediction of deep submicron double gate SOI MOSFETsKranti, Abhinav / Chung, Tsung Ming / Flandre, Denis / Raskin, Jean-Pierre et al. | 2005
- 430
-
Tuning the electron density in structures for vertical quantum dot artificial atom applicationsYu, G / Gupta, J A / Aers, G C / Austing, D G et al. | 2005
- 430
-
Tuning the electron density in structures for vertical quantum dot artificial atom apllicationsYu, G. / Gupta, J.A. / Aers, G.C. / Austing, D.G. et al. | 2005
- 434
-
A combined SIMS and ICPMS investigation of the origin and distribution of potentially electrically active impurities in CdTe/CdS solar cell structuresEmziane, M / Durose, K / Romeo, N / Bosio, A / Halliday, D P et al. | 2005
- 443
-
Low-voltage top-emitting organic light-emitting devices with an organic double-heterojunction structureXie, Wenfa / Wu, Zhijun / Hu, Wei / Zhao, Yi / Li, Chuannan / Liu, Shiyong et al. | 2005
- 446
-
Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystalsQasrawi, A F / Gasanly, N M et al. | 2005
- 453
-
1/f noise in Langmuir–Blodgett films on siliconMalik, S / Ray, A K / Bruce, S et al. | 2005
- 459
-
Comparison of InAs quantum dot lasers emitting at 1.55 µm under optical and electrical injectionPlatz, C / Paranthoën, C / Caroff, P / Bertru, N / Labbé, C / Even, J / Dehaese, O / Folliot, H / Le Corre, A / Loualiche, S et al. | 2005
- 459
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Comparison of InAs quantum dot lasers emitting at 1.55 micron under optical and electrical injectionPlatz, C. / Paranthoen, C. / Bertru, N. / Labbe, C. / Even, J. / Dehaese, O. / Folliot, H. / Corre, A. Le / Loualiche, S. / Moreau, G. et al. | 2005
- 459
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Comparison of InAs quantum dot lasers emitting at 1.55 mum under optical and electrical injectionPlatz, C. / Paranthoen, C. / Caroff, P. / Bertru, N. / Labbe, C. / Even, J. / Dehaese, O. / Folliot, H. / Le Corre, A. / Loualiche, S. et al. | 2005
- 464
-
Investigation of electrical properties of organic Schottky diodes using MgPc—the effect of oxygen absorption and post deposition annealingRajesh, K R / Menon, C S et al. | 2005
- 469
-
High frequency degradation of body-contacted PD SOI MOSFET output conductanceLederer, Dimitri / Flandre, Denis / Raskin, Jean-Pierre et al. | 2005
- 473
-
1024 x 1024 pixel mid-wavelength and long-wavelength infrared QWIP focal plane arrays for imaging applicationsGunapala, S. D. / Bandara, S. V. / Liu, J. K. / Hill, C. J. / Rafol, S. B. / Mumolo, J. M. / Trinh, J. T. / Tidrow, M. Z. / LeVan, P. D. et al. | 2005
- 473
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1024 × 1024 pixel mid-wavelength and long-wavelength infrared QWIP focal plane arrays for imaging applicationsGunapala, S D / Bandara, S V / Liu, J K / Hill, C J / Rafol, S B / Mumolo, J M / Trinh, J T / Tidrow, M Z / LeVan, P D et al. | 2005
- L15
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Annealing effect on electrical properties of high-k MgZnO film on siliconLiang, Jun / Wu, Huizhen / Chen, Naibo / Xu, Tianning et al. | 2005
- L20
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Investigation of the injection velocity of holes in strained Si pMOSFETsNicholas, G / Grasby, T J / Parker, E H C / Whall, T E / Paul, D J / Evans, A G R / von Känel, H et al. | 2005
- L23
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Pure blue organic light-emitting devices based on 2,5-diphenyl-1, 4-distyrylbenzene with two trans-double bondsCheng, Gang / Xie, Zengqi / Zhang, Yingfang / Xia, Hong / Ma, Yuguang / Liu, Shiyong et al. | 2005