Thick epitaxial layers on 4 deg of angle off-oriented 4H-SiC suited for PiN-diodes with blocking voltages above 6.5 kV (English)
- New search for: Hecht, Christian
- New search for: Thomas, Bernd
- New search for: Bartsch, Wolfgang
- New search for: Hecht, Christian
- New search for: Thomas, Bernd
- New search for: Bartsch, Wolfgang
In:
ICSCRM, Silicon Carbide and Related Materials, International Conference, 11
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239-242
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2006
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ISBN:
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ISSN:
- Conference paper / Print
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Title:Thick epitaxial layers on 4 deg of angle off-oriented 4H-SiC suited for PiN-diodes with blocking voltages above 6.5 kV
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Contributors:
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Published in:Materials Science Forum ; 527-529 ; 239-242
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Publisher:
- New search for: Trans Tech Publications
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Place of publication:Zürich-Ütikon
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Publication date:2006
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Size:4 Seiten, 4 Bilder, 8 Quellen
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ISBN:
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ISSN:
-
DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Reduction of Dislocations in the Bulk Growth of SiC CrystalsNakamura, D. et al. | 2006
- 9
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The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single CrystalsRost, H. J. / Schmidbauer, M. / Siche, D. et al. | 2006
- 15
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Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical HeatersDrachev, R. / Deyneka, E. / Rhodes, C. / Schupp, J. / Sudarshan, T. S. et al. | 2006
- 21
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Halide-CVD Growth of Bulk SiC CrystalsPolyakov, A. Y. / Fanton, M. A. / Skowronski, M. / Chung, H. J. / Nigam, S. / Huh, S. W. et al. | 2006
- 27
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Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiCNigam, S. / Chung, H. J. / Huh, S. W. / Grim, J. / Polyakov, A. Y. / Fanton, M. A. / Weiland, B. / Snyder, D. W. / Skowronski, M. et al. | 2006
- 31
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Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC SubstratesJenny, J. R. / Malta, D. P. / Tsvetkov, V. T. / Das, M. K. / Hobgood, H. M. D. / Carter, C. H. et al. | 2006
- 35
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Growth of Micropipe Free Crystals on 4H-SiC {03-38} SeedsFurusho, T. / Kobayashi, R. / Nishiguchi, T. / Sasaki, M. / Hirai, K. / Hayashi, T. / Kinoshita, H. / Shiomi, H. et al. | 2006
- 39
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Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots via Physical Vapor Transport (PVT)Basceri, C. / Khlebnikov, I. / Khlebnikov, Y. / Muzykov, P. / Sharma, M. / Stratiy, G. / Silan, M. / Balkas, C. M. et al. | 2006
- 43
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Growth and Characterization of Large Diameter 6H and 4H SiC Single CrystalsGupta, A. / Semenas, E. / Emorhokpor, E. / Chen, J. / Zwieback, I. / Souzis, A. E. / Anderson, T. et al. | 2006
- 47
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Growth of SiC Boules with Low Boron ConcentrationFanton, M. A. / Cavalero, R. L. / Ray, R. G. / Weiland, B. E. / Everson, W. / Snyder, D. W. / Gamble, R. D. / Oslosky, E. et al. | 2006
- 51
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Resistivity Distribution in Undoped 6H-SiC Boules and WafersLi, Q. / Polyakov, A. Y. / Skowronski, M. / Sanchez, E. K. / Loboda, M. J. / Fanton, M. A. / Bogart, T. / Gamble, D. / Smirnov, N. B. / Makarov, Y. N. et al. | 2006
- 55
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The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder SourceKim, K. M. / Seo, S. H. / Kim, J. W. / Song, J. S. / Oh, M. H. / Bahng, W. / Kim, E. D. et al. | 2006
- 59
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A Study of Nitrogen Incorporation in PVT Growth of n^+ 4H SiCHansen, D. M. / Chung, G. / Loboda, M. J. et al. | 2006
- 63
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In Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray ImagingChaussende, D. / Wellmann, P. J. / Ucar, M. / Pons, M. / Madar, R. et al. | 2006
- 67
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Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial CrystalsDhanaraj, G. / Chen, Y. / Dudley, M. / Zhang, H. et al. | 2006
- 71
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Processing of Poly-SiC Substrates with Large Grains for Wafer-BondingChichignoud, G. / Auvray, L. / Blanquet, E. / Anikin, M. / Pernot, E. / Bluet, J. M. / Chaudouet, P. / Mermoux, M. / Moisson, C. / Letertre, F. et al. | 2006
- 75
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Modeling and Experimental Verification of SiC M-PVT Bulk Crystal GrowthWellmann, P. J. / Muller, R. / Pons, M. et al. | 2006
- 79
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Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiCWellmann, P. J. / Queren, D. / Muller, R. / Sakwe, S. A. / Kunecke, U. et al. | 2006
- 83
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High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible DesignKu, K. R. / Kim, J. G. / Seo, J. D. / Lee, J. Y. / Kyun, M. O. / Lee, W. J. / Lee, G. H. / Kim, I. S. / Shin, B. C. et al. | 2006
- 87
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Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal GrowthGrasza, K. / Tymicki, E. / Kisielewski, J. et al. | 2006
- 91
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The Influence of SiC Powder Source on 6H-SiC Single Crystals Grown by the Sublimation MethodKim, J. W. / Seo, S. H. / Kim, K. M. / Song, J. S. / Kim, T. S. / Oh, M. H. et al. | 2006
- 95
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Polytype Control in 6H-SiC Grown via Sublimation MethodLi, X. X. / Jiang, S. Z. / Hu, X. B. / Dong, J. / Li, J. / Chen, X. F. / Wang, L. / Xu, X. G. / Jiang, M. H. et al. | 2006
- 99
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Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT MethodLatu-Romain, L. / Chaussende, D. / Balloud, C. / Juillaguet, S. / Rapenne, L. / Pernot, E. / Camassel, J. / Pons, M. / Madar, R. et al. | 2006
- 103
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Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk CrystalsFanton, M. A. / Li, Q. / Polyakov, A. Y. / Cavalero, R. L. / Ray, R. G. / Weiland, B. E. / Skowronski, M. et al. | 2006
- 107
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SiC HTCVD Simulation Modified by Sublimation EtchingKitou, Y. / Makino, E. / Ikeda, K. / Nagakubo, M. / Onda, S. et al. | 2006
- 111
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Gas Fed Top-Seeded Solution Growth of Silicon CarbideChaussende, D. / Pons, M. / Madar, R. et al. | 2006
- 115
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Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary SolutionYashiro, N. / Kusunoki, K. / Kamei, K. / Hasebe, M. / Ujihara, T. / Nakajima, K. et al. | 2006
- 119
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Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation TechniqueKusunoki, K. / Kamei, K. / Okada, N. / Yashiro, N. / Yauchi, A. / Ujihara, T. / Nakajima, K. et al. | 2006
- 123
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Growth of Cubic Silicon Carbide Crystals from SolutionEid, J. / Santailler, J. L. / Ferrand, B. / Ferret, P. / Pesenti, J. / Basset, A. / Passero, A. / Mantzari, A. / Polychroniadis, E. K. / Balloud, C. et al. | 2006
- 129
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Recent Progress of SiC Hot-Wall Epitaxy and Its ModelingNishizawa, S. / Pons, M. et al. | 2006
- 135
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Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production NeedsThomas, B. / Hecht, C. / Stein, R. / Friedrichs, P. et al. | 2006
- 141
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Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V~f Drift in SiC Bipolar Power DevicesSumakeris, J. J. / Bergman, J. P. / Das, M. K. / Hallin, C. / Hull, B. A. / Janzen, E. / Lendenmann, H. / O Loughlin, M. J. / Paisley, M. J. / Ha, S. et al. | 2006
- 147
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Investigation of In-Grown Dislocations in 4H-SiC Epitaxial LayersKojima, K. / Kato, T. / Kuroda, S. / Okumura, H. / Arai, K. et al. | 2006
- 153
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4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface RoughnessAigo, T. / Sawamura, M. / Fujimoto, T. / Katsuno, M. / Yashiro, H. / Tsuge, H. / Nakabayashi, M. / Hoshino, T. / Ohtani, N. et al. | 2006
- 159
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SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter WafersBurk, A. A. / O Loughlin, M. J. / Paisley, M. J. / Powell, A. R. / Brady, M. F. / Leonard, R. T. / McClure, D. A. et al. | 2006
- 163
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Epitaxial Layers Grown with HCI Addition: A Comparison with the Standard ProcessLa Via, F. / Galvagno, G. / Firrincieli, A. / Roccaforte, F. / Di Franco, S. / Ruggiero, A. / Barbera, M. / Reitano, R. / Musumeci, P. / Calcagno, L. et al. | 2006
- 167
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Lower-Temperature Epitaxial Growth of 4H-SiC Using CH~3Cl Carbon Gas PrecursorKoshka, Y. / Lin, H. D. / Melnychuk, G. / Wood, C. et al. | 2006
- 171
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Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH~3Cl Carbon PrecursorLin, H. D. / Wyatt, J. L. / Koshka, Y. et al. | 2006
- 175
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Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon PrecursorMacMillan, M. F. / Loboda, M. J. / Chung, G. / Carlson, E. / Wan, J. et al. | 2006
- 179
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SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon PrecursorLeone, S. / Mauceri, M. / Pistone, G. / Abbondanza, G. / Portuese, F. / Abagnale, G. / Valente, G. L. / Crippa, D. / Barbera, M. / Reitano, R. et al. | 2006
- 183
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Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis SubstratesHassan, J. u. / Hallin, C. / Bergman, J. P. / Janzen, E. et al. | 2006
- 187
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High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVDMyers, R. L. / Shishkin, Y. / Kordina, O. / Haselbarth, I. / Saddow, S. E. et al. | 2006
- 191
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Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor DepositionSun, G. S. / Ning, J. / Gong, Q. C. / Gao, X. / Wang, L. / Liu, X. F. / Zeng, Y. P. / Li, J. M. et al. | 2006
- 195
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Highly Uniform SiC Epitaxy for MESFET FabricationZhang, J. / Mazzola, J. / Hoff, C. / Rivas, C. / Romano, E. / Casady, J. R. B. / Mazzola, M. S. / Casady, J. B. / Matocha, K. S. et al. | 2006
- 199
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Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical CharacterizationLa Via, F. / Galvagno, G. / Firrincieli, A. / Roccaforte, F. / Di Franco, S. / Ruggiero, A. / Calcagno, L. / Foti, G. / Mauceri, M. / Leone, S. et al. | 2006
- 203
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High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH~3SiH~3 and C~3H~8 SourcesHatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2006
- 207
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Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC SubstratesBahng, W. / Cheong, H. J. / Kang, I. H. / Kim, S. C. / Kim, K. H. / Kim, N. K. et al. | 2006
- 211
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Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching PhenomenaIshida, Y. / Takahashi, T. / Okumura, H. / Arai, K. / Kimura, K. / Nakamura, K. / Yoshida, S. et al. | 2006
- 215
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Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating PropertySong, H. K. / Moon, J. H. / Yim, J. H. / Kim, H. J. et al. | 2006
- 219
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Epitaxial Growth of 4H-SiC on 4^o Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVDWada, K. / Kimoto, T. / Nishikawa, K. / Matsunami, H. et al. | 2006
- 223
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Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor DepositionSaitoh, H. / Manabe, A. / Kimoto, T. et al. | 2006
- 227
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Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiCSyvajarvi, M. / Yakimova, R. / Yazdi, G. R. / Arjunan, A. / Toupitsyn, E. / Sudarshan, T. S. et al. | 2006
- 231
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Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) EpitaxyTsuchida, H. / Kamata, I. / Miyanagi, T. / Nakamura, T. / Nakayama, K. / Ishii, R. / Sugawara, Y. et al. | 2006
- 235
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Ab Initio Studies of the Surface Reaction of Si~2C and SiC~2 with Si on the 4H-SiC (000-1) SurfaceYamaguchi, H. / Sakiyama, Y. / Makino, E. / Onda, S. / Matsumoto, Y. et al. | 2006
- 239
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Thick Epitaxial Layers on 4^o Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kVHecht, C. / Thomas, B. / Bartsch, W. et al. | 2006
- 239
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Thick epitaxial layers on 4 deg of angle off-oriented 4H-SiC suited for PiN-diodes with blocking voltages above 6.5 kVHecht, Christian / Thomas, Bernd / Bartsch, Wolfgang et al. | 2006
- 243
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Growth of Low Basal Plane Dislocation Density SiC Epitaxial LayersZhang, Z. H. / Sudarshan, T. S. et al. | 2006
- 247
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Experimental Observations of Extended Growth of 4H-SiC Webbed CantileversTrunek, A. J. / Neudeck, P. G. / Spry, D. J. et al. | 2006
- 251
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SiC Migration Enhanced Embedded Epitaxial (ME^3) Growth TechnologyTakeuchi, Y. / Kataoka, M. / Kimoto, T. / Matsunami, H. / Malhan, R. K. et al. | 2006
- 255
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CVD Epitaxial Growth of 4H-SiC on Porous SiC SubstratesShishkin, Y. / Ke, Y. / Yan, F. / Devaty, R. P. / Choyke, W. J. / Saddow, S. E. et al. | 2006
- 259
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Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC MaskLi, C. H. / Bhat, I. B. / Chow, T. P. et al. | 2006
- 263
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6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1^o-Off Substrate by Closed-Space Sublimation MethodKawai, Y. / Maeda, T. / Nakamura, Y. / Sakurai, Y. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. / Yoshimoto, M. / Furusho, T. et al. | 2006
- 267
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Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal FurnacePark, C. K. / An, J. H. / Lee, W. J. / Shin, B. C. / Nishino, S. et al. | 2006
- 271
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Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxial Growth on on-axis alpha-SiC (0001) at Low TemperatureSoueidan, M. / Ferro, G. / Cauwet, F. / Mollet, L. / Jacquier, C. / Younes, G. / Monteil, Y. et al. | 2006
- 275
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Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based MeltsFerro, G. / Soueidan, M. / Jacquier, C. / Godignon, P. / Stauden, T. / Pezoldt, J. / Lazar, M. / Montserrat, J. / Monteil, Y. et al. | 2006
- 279
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Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC MesasDu, H. / Skowronski, M. / Neudeck, P. G. / Trunek, A. J. / Spry, D. J. / Powell, J. A. et al. | 2006
- 283
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Structure Evolution of 3C-SiC on Cubic and Hexagonal SubstratesYakimova, R. / Yazdi, G. R. / Sritirawisarn, N. / Syvajarvi, M. et al. | 2006
- 287
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Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS MechanismSoueidan, M. / Ferro, G. / Stoemenos, J. / Polychroniadis, E. K. / Chaussende, D. / Soares, F. / Juillaguet, S. / Camassel, J. / Monteil, Y. et al. | 2006
- 291
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`Switch-Back Epitaxy' as a Novel Technique for Reducing Stacking Faults in 3C-SiCYagi, K. / Kawahara, T. / Hatta, N. / Nagasawa, H. et al. | 2006
- 295
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Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt ModificationPezoldt, J. / Morales, F. M. / Stauden, T. / Forster, C. / Polychroniadis, E. K. / Stoemenos, J. / Panknin, D. / Skorupa, W. et al. | 2006
- 299
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Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVDShimizu, H. / Aoyama, Y. et al. | 2006
- 303
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Selective Epitaxial Growth of 3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD ReactorGupta, A. / Jacob, C. et al. | 2006
- 307
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Growth of 3C-SiC on Si Molds for MEMS ApplicationsReyes, M. / Waits, M. / Harvey, S. / Shishkin, Y. / Geil, B. R. / Wolan, J. T. / Saddow, S. E. et al. | 2006
- 311
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Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor DepositionFu, X. A. / Trevino, J. / Mehregany, M. / Zorman, C. A. et al. | 2006
- 315
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Multi-Scale Simulation of MBE-Grown SiC/Si NanostructuresSchmidt, A. A. / Trushin, Y. V. / Safonov, K. L. / Kharlamov, V. S. / Kulikov, D. V. / Ambacher, O. / Pezoldt, J. et al. | 2006
- 321
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Theory of Dislocations in SiC: The Effect of Charge on Kink MigrationEberlein, T. A. G. / Jones, R. / Blumenau, A. T. et al. | 2006
- 327
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Structure of Carrot Defects in 4H-SiC EpilayersZhang, X. / Ha, S. / Benamara, M. / Skowronski, M. / Sumakeris, J. J. / Ryu, S. / Paisley, M. J. / O Loughlin, M. J. et al. | 2006
- 333
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Characterization of SiC Crystals by Using Deep UV Excitation Raman SpectroscopyNakashima, S. / Mitani, T. et al. | 2006
- 339
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Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman SpectroscopyTomita, T. / Matsuo, S. / Okada, T. / Kimoto, T. / Mitani, T. / Nakashima, S. et al. | 2006
- 343
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Raman Scattering Analyses of Stacking Faults in 3C-SiC CrystalsMitani, T. / Nakashima, S. / Okumura, H. / Nagasawa, H. et al. | 2006
- 347
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Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiCGlembocki, O. J. / Skowronski, M. / Prokes, S. M. / Gaskill, D. K. / Caldwell, J. D. et al. | 2006
- 351
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Stacking Faults and 3C Quantum Wells in Hexagonal SiC PolytypesMiao, M. S. / Lambrecht, W. R. L. et al. | 2006
- 355
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Silicon Carbide: A Playground for 1D-Modulation ElectronicsDeak, P. / Buruzs, A. / Gali, A. / Frauenheim, T. / Choyke, W. J. et al. | 2006
- 359
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Peierls Barriers and Core Properties of Partial Dislocations in SiCSavini, G. / Heggie, M. I. / Oberg, S. et al. | 2006
- 363
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Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n DiodesWang, Y. / Chen, L. / Mikhov, M. K. / Samson, G. / Skromme, B. J. et al. | 2006
- 367
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Recombination Behavior of Stacking Faults in SiC p-i-n DiodesMaximenko, S. I. / Pirouz, P. / Sudarshan, T. S. et al. | 2006
- 371
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Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free EpilayersZhang, Z. H. / Grekov, A. E. / Sadagopan, P. / Maximenko, S. I. / Sudarshan, T. S. et al. | 2006
- 375
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Observation of Shrinking and Reformation of Shockley Stacking Faults by PL MappingMiyanagi, T. / Tsuchida, H. / Kamata, I. / Nakamura, T. / Ishii, R. / Nakayama, K. / Sugawara, Y. et al. | 2006
- 379
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Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core ReconstructionLancin, M. / Regula, G. / Douin, J. / Idrissi, H. / Ottaviani, L. / Pichaud, B. et al. | 2006
- 383
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Overlapping Shockley/Frank Faults in 4H-SiC PiN DiodesTwigg, M. E. / Stahlbush, R. E. / Losee, P. A. / Li, C. H. / Bhat, I. B. / Chow, T. P. et al. | 2006
- 387
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Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode StructuresLiu, K. X. / Stahlbush, R. E. / Hobart, K. D. / Sumakeris, J. J. et al. | 2006
- 391
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Photoemission of 4H-SiC pin Diodes Epitaxied by the Sublimation MethodCamara, N. / Zekentes, K. / Bano, E. / Thuaire, A. / Lebedev, A. A. et al. | 2006
- 395
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Investigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted InterfaceGaleckas, A. / Hallen, A. / Schoner, A. / Linnros, J. / Pirouz, P. et al. | 2006
- 399
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Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial FilmsOkada, T. / Okamoto, K. / Ochi, K. / Higashimine, K. / Kimoto, T. et al. | 2006
- 403
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Structure of "Star" Defect in 4H-SiC Substrates and EpilayersLee, J. W. / Skowronski, M. et al. | 2006
- 407
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Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single CrystalYamaguchi, S. / Nakamura, D. / Gunjishima, I. / Hirose, Y. et al. | 2006
- 411
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Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-EpilayersVetter, W. M. / Tsuchida, H. / Kamata, I. / Dudley, M. et al. | 2006
- 415
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Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC EpilayersKamata, I. / Tsuchida, H. / Miyanagi, T. / Nakamura, T. et al. | 2006
- 419
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Why are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?Zhang, Z. H. / Shrivastava, A. / Sudarshan, T. S. et al. | 2006
- 423
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3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current MethodYanagisawa, Y. / Hatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2006
- 427
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Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDsSoloviev, S. I. / Sandvik, P. / Arthur, S. D. / Matocha, K. S. / Maximenko, S. I. / Sudarshan, T. S. et al. | 2006
- 431
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Structural Defects and Critical Electric Field in 3C-SiCCapano, M. A. / Smith, A. R. / Kim, B. C. / Kvam, E. P. / Tsoi, S. / Ramdas, A. K. / Cooper, J. A. et al. | 2006
- 435
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Giant Burgers Vector Micropipe-Dislocations in Silicon Carbide Investigated by Atomic Force MicroscopyPernot, E. / Hartwig, J. / Pons, M. / Madar, R. et al. | 2006
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Open Core Dislocations and Surface Energy of SiCMaximenko, S. I. / Pirouz, P. / Sudarshan, T. S. et al. | 2006
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Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC SubstratesEmorhokpor, E. / Carlson, E. / Wan, J. / Weber, A. / Basceri, C. / Jenny, J. R. / Sandhu, R. / Oliver, J. D. / Burkeen, F. / Somanchi, A. et al. | 2006
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A New Method of Mapping and Counting Micropipes in SiC WafersWan, J. W. / Park, S. H. / Chung, G. / Carlson, E. / Loboda, M. J. et al. | 2006
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Identification of Polytypes in Sublimation Grown 4H-SiC Crystals by High Resolution X-Ray DiffractometryDong, J. / Wang, L. / Hu, X. B. / Li, X. X. / Li, J. / Jiang, S. Z. / Chen, X. F. / Xu, X. G. / Jiang, M. H. et al. | 2006
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Optical Studies of Deep Centers in Semi-Insulating SiCMagnusson, B. / Aavikko, R. / Saarinen, K. / Son, N. T. / Janzen, E. et al. | 2006
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Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical TechniquesThuaire, A. / Henry, A. / Magnusson, B. / Bergman, J. P. / Chen, W. M. / Janzen, E. / Mermoux, M. / Bano, E. et al. | 2006
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High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical InsightMattausch, A. / Bockstedte, M. / Pankratov, O. / Steeds, J. W. / Furkert, S. A. / Hayes, J. M. / Sullivan, W. / Wright, N. G. et al. | 2006
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Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC CrystalsNeimontas, K. / Kadys, A. / Aleksiejunas, R. / Jarasiunas, K. / Chung, G. / Sanchez, E. K. / Loboda, M. J. et al. | 2006
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Origin of the Up-Conversion Process in 4H SiCSteeds, J. W. / Furkert, S. A. / Sullivan, W. / Wagner, G. et al. | 2006
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A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiCSullivan, W. / Steeds, J. W. / von Bardeleben, H. J. / Cantin, J. L. et al. | 2006
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Investigation of the Displacement Threshold of Si in 4H SiCSullivan, W. / Steeds, J. W. et al. | 2006
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Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient SpectroscopyAlfieri, G. / Grossner, U. / Monakhov, E. V. / Svensson, B. G. / Steeds, J. W. / Sullivan, W. et al. | 2006
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Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiCStorasta, L. / Kamata, I. / Nakamura, T. / Tsuchida, H. et al. | 2006
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Deep Traps and Charge Carrier Lifetimes in 4H-SiC EpilayersHuh, S. W. / Sumakeris, J. J. / Polyakov, A. Y. / Skowronski, M. / Klein, P. B. / Shanabrook, B. V. / O Loughlin, M. J. et al. | 2006
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Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor DepositionHuh, S. W. / Polyakov, A. Y. / Chung, H. J. / Nigam, S. / Skowronski, M. / Glaser, E. R. / Carlos, W. E. / Fanton, M. A. / Smirnov, N. B. et al. | 2006
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Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient SpectroscopyDanno, K. / Kimoto, T. et al. | 2006
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Deep Level near E~C - 0.55 eV in Undoped 4H-SiC SubstratesMitchel, W. C. / Mitchell, W. D. / Smith, S. R. / Landis, G. / Evwaraye, A. O. / Fang, Z. Q. / Look, D. C. / Sizelove, J. R. et al. | 2006
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Deep Traps in High-Purity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current SpectroscopyFang, Z. Q. / Claflin, B. / Look, D. C. / Polenta, L. / Chen, J. / Anderson, T. / Mitchel, W. C. et al. | 2006
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Quenching Photoconductivity and Photoelectric Memory in 6H-SiCDuisenbaev, M. et al. | 2006
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Deep Level Point Defects in Semi-Insulating SiCZvanut, M. E. / Lee, W. W. / Wang, H. / Mitchel, W. C. / Mitchell, W. D. et al. | 2006
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Divacancy and Its Identification: TheoryGali, A. / Bockstedte, M. / Son, N. T. / Umeda, T. / Isoya, J. / Janzen, E. et al. | 2006
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Divacancy Model for P6/P7 Centers in 4H- and 6H-SiCSon, N. T. / Umeda, T. / Isoya, J. / Gali, A. / Bockstedte, M. / Magnusson, B. / Ellison, A. / Morishita, N. / Ohshima, T. / Itoh, H. et al. | 2006
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Thermal Evolution of Defects in Semi-Insulating 4H SiCCarlos, W. E. / Glaser, E. R. / Garces, N. Y. / Shanabrook, B. V. / Fanton, M. A. et al. | 2006
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Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR StudyIlyin, I. V. / Muzafarova, M. V. / Mokhov, E. N. / Sankin, V. I. / Baranov, P. G. / Orlinskii, S. B. / Schmidt, J. et al. | 2006
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Signature of the Negative Carbon Vacancy-Antisite ComplexBockstedte, M. / Gali, A. / Umeda, T. / Son, N. T. / Isoya, J. / Janzen, E. et al. | 2006
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Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiCUmeda, T. / Son, N. T. / Isoya, J. / Morishita, N. / Ohshima, T. / Itoh, H. / Janzen, E. et al. | 2006
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Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC PolytypesGarces, N. Y. / Carlos, W. E. / Glaser, E. R. / Huh, S. W. / Chung, H. J. / Nigam, S. / Polyakov, A. Y. / Skowronski, M. et al. | 2006
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Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiCPinheiro, M. V. B. / Rauls, E. / Gerstmann, U. / Greulich-Weber, S. / Spaeth, J. M. / Overhof, H. et al. | 2006
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Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic ResonanceMuzafarova, M. V. / Ilyin, I. V. / Mokhov, E. N. / Sankin, V. I. / Baranov, P. G. et al. | 2006
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Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiCKalabukhova, E. N. / Lukin, S. N. / Savchenko, D. V. / Mitchel, W. C. / Greulich-Weber, S. / Rauls, E. / Gerstmann, U. et al. | 2006
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Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiCKalabukhova, E. N. / Lukin, S. N. / Savchenko, D. V. / Sitnikov, A. A. / Mitchel, W. C. / Smith, S. R. / Greulich-Weber, S. et al. | 2006
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Identification of Deep Level Defects in SiC Bipolar Junction TransistorsLenahan, P. M. / Pfeiffenberger, N. T. / Pribicko, T. G. / Lelis, A. J. et al. | 2006
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Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic ResonanceKerbiriou, X. / Barthe, M. F. / Esnouf, S. / Desgardin, P. / Blondiaux, G. / Petite, G. et al. | 2006
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Clustering of Vacancies in Semi-Insulating SiC Observed with Positron SpectroscopyAavikko, R. / Saarinen, K. / Magnusson, B. / Janzen, E. et al. | 2006
- 579
-
Electronic Raman Studies of Shallow Donors in Silicon CarbidePusche, R. / Hundhausen, M. / Ley, L. / Semmelroth, K. / Pensl, G. / Desperrier, P. / Wellmann, P. J. / Haller, E. E. / Ager, J. W. / Starke, U. et al. | 2006
- 585
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Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiCYan, F. / Devaty, R. P. / Choyke, W. J. / Gali, A. / Bhat, I. B. / Larkin, D. J. et al. | 2006
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-
Photoluminescence of Phosphorus Doped SiCHenry, A. / Janzen, E. et al. | 2006
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Shallow P Donors in 3C-, 4H- and 6H-SiCIsoya, J. / Katagiri, M. / Umeda, T. / Son, N. T. / Henry, A. / Gali, A. / Morishita, N. / Ohshima, T. / Itoh, H. / Janzen, E. et al. | 2006
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-
Dependence of the Ionization Energy of Phosphorus Donor in 4H-SiC on Doping ConcentrationRao, S. / Chow, T. P. / Bhat, I. B. et al. | 2006
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-
Donor-Acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiCIvanov, I. G. / Henry, A. / Janzen, E. et al. | 2006
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A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC LayersHornos, T. / Gali, A. / Devaty, R. P. / Choyke, W. J. et al. | 2006
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New Aspects in n-type Doping of SiC with PhosphorusRauls, E. / Gerstmann, U. / Greulich-Weber, S. / Semmelroth, K. / Pensl, G. / Haller, E. E. et al. | 2006
- 613
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Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC SubstratesGlaser, E. R. / Shanabrook, B. V. / Carlos, W. E. / Chung, H. J. / Nigam, S. / Polyakov, A. Y. / Skowronski, M. et al. | 2006
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Evaluating and Improving SIMS Method for Measuring Nitrogen in SiCSmith, H. E. / Eyink, K. G. / Mitchel, W. C. / Wood, M. C. / Fanton, M. A. et al. | 2006
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-
Kinetic Mechanisms for the Deactivation of Nitrogen in SiCBockstedte, M. / Mattausch, A. / Pankratov, O. et al. | 2006
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Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor DepositionChung, H. J. / Huh, S. W. / Polyakov, A. Y. / Nigam, N. / Li, Q. / Grim, J. / Skowronski, M. / Glaser, E. R. / Carlos, W. E. / Freitas, J. A. et al. | 2006
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-
Accurate CsM^+ SIMS Aluminum Dopant Profiling in SiCSmith, H. E. / Tsao, B. H. / Scofield, J. D. et al. | 2006
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-
Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped alpha-SiC Substrates Grown by the M-PVT MethodContreras, S. / Zielinski, M. / Konczewicz, L. / Blanc, C. / Juillaguet, S. / Muller, R. / Kunecke, U. / Wellmann, P. J. / Camassel, J. et al. | 2006
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In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC SubstratesLinnarsson, M. K. / Janson, M. S. / Forsberg, U. / Janzen, E. et al. | 2006
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-
Electronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide in Different PolytypesMiao, M. S. / Lambrecht, W. R. L. et al. | 2006
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-
The Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiCLee, W. W. / Zvanut, M. E. et al. | 2006
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-
Luminescence and EPR Characterization of Vanadium Doped Semi-Insulating 4H SiCKalabukhova, E. N. / Savchenko, D. V. / Greulich-Weber, S. / Bulanyi, M. F. / Omelchenko, S. A. / Khmelenko, O. V. / Gorban, A. A. / Mokhov, E. N. et al. | 2006
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Co-Doping of Er-Doped SiC with Oxygen - A Promising Way Towards Efficient 1540 nm Emission at Room Temperature?Gerstmann, U. / Rauls, E. / Sanna, S. / Frauenheim, T. / Overhof, H. et al. | 2006
- 659
-
Europium Induced Deep Levels in Hexagonal Silicon CarbidePasold, G. / Albrecht, F. / Hulsen, C. / Sielemann, R. / Witthuhn, W. et al. | 2006
- 663
-
Cathodoluminescence Measurements and Thermal Activation of Rare Earth Doped (Tb^3^+, Dy^3^+ and Eu^3^+) a-SiC Thin Films Prepared by rf Magnetron SputteringWeingartner, R. / Erlenbach, O. / de Zela, F. / Winnacker, A. / Brauer, I. / Strunk, H. P. et al. | 2006
- 667
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Hydrogen Nanochemistry Achieving Clean and Pre-Oxidized Silicon Carbide Surface MetallizationSoukiassian, P. / Silly, M. G. / Radtke, C. / Enriquez, H. / D angelo, M. / Derycke, V. / Aristov, V. Y. / Amy, F. / Chabal, Y. J. / Moras, P. et al. | 2006
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-
Temperature Induced Phase Transformation on the 4H-SiC(11-20) SurfaceLee, W. Y. / Soubatch, S. / Starke, U. et al. | 2006
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-
SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)Starke, U. / Lee, W. Y. / Coletti, C. / Saddow, S. E. / Devaty, R. P. / Choyke, W. J. et al. | 2006
- 681
-
Experimental Study of the Formation and Oxidation of the Sm/4H-SiC Surface AlloyKildemo, M. / Grossner, U. / Juel, M. / Samuelsen, B. / Svensson, B. G. / Raaen, S. et al. | 2006
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-
Low Energy Ion Modification of 3C-SiC SurfacesForster, C. / Kosiba, R. / Ecke, G. / Cimalla, V. / Ambacher, O. / Pezoldt, J. et al. | 2006
- 689
-
Phonons in SiC from INS, IXS, and Ab-Initio CalculationsStrauch, D. / Dorner, B. / Ivanov, A. A. / Krisch, M. / Serrano, J. / Bosak, A. / Choyke, W. J. / Stojetz, B. / Malorny, M. et al. | 2006
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-
Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor DepositionFeng, Z. C. / Huang, C. W. / Chang, W. Y. / Zhao, J. / Tin, C. C. / Lu, W. / Collins, W. E. et al. | 2006
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-
Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single CrystalsNakabayashi, M. / Fujimoto, T. / Katsuno, M. / Ohtani, N. et al. | 2006
- 703
-
Thermal Lens Technique for the Determination of SiC Thermo-Optical PropertiesAnjos, V. / Bell, M. J. V. / de Vasconcelos, E. A. / da Silva, E. F. / Andrade, A. A. / Franco, R. W. A. / Castro, M. P. P. / Esquef, I. A. / Faria, R. T. et al. | 2006
- 707
-
Wannier-Stark Ladder and Negative Differential Conductance in 4H-SiCSankin, V. I. / Yakimova, R. et al. | 2006
- 711
-
Characterization of SiC Wafers by Photoluminescence MappingTajima, M. / Higashi, E. / Hayashi, T. / Kinoshita, H. / Shiomi, H. et al. | 2006
- 717
-
Correlation between Room Temperature Photoluminescence and Resistivity in Semi-Insulating Silicon CarbideChanda, S. K. / Koshka, Y. / Yoganathan, M. et al. | 2006
- 721
-
Simple, Calibrated Analysis and Mapping of SiC Wafer Defects by Birefringence ImagingPark, S. H. / Loboda, M. J. / Spaulding, M. J. et al. | 2006
- 725
-
SiC Substrate Doping Profiles Using Commercial Optical ScannersCaldwell, J. D. / Glembocki, O. J. / Hansen, D. M. / Chung, G. / Hobart, K. D. / Kub, F. J. et al. | 2006
- 729
-
Characterization of SiC Substrates Using X-Ray Rocking Curve MappingYoganathan, M. / Emorhokpor, E. / Kerr, T. / Gupta, A. / Tanner, C. D. / Zwieback, I. et al. | 2006
- 733
-
Microwave Dielectric Loss Characterization of Silicon Carbide WafersBogart, T. / Everson, B. / Gamble, R. D. / Oslosky, E. / Synder, D. W. / Furman, E. / Perini, S. / Lanagan, M. et al. | 2006
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Columnar Pore Growth in n-Type 6H SiCKe, Y. / Yan, F. / Devaty, R. P. / Choyke, W. J. et al. | 2006
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-
A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiCKe, Y. / Moisson, C. / Gaan, S. / Feenstra, R. M. / Devaty, R. P. / Choyke, W. J. et al. | 2006
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-
Brillouin Spectra of Porous p-Type 6H-SiCAndrews, G. T. / Young, C. / Polomska, A. / Clouter, M. J. / Ke, Y. / Devaty, R. P. / Choyke, W. J. et al. | 2006
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-
Columnar Morphology of Porous Silicon Carbide as a Protein-Permeable Membrane for Biosensors and Other ApplicationsRosenbloom, A. J. / Nie, S. / Ke, Y. / Devaty, R. P. / Choyke, W. J. et al. | 2006
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-
Novel Polycrystalline SiC Films Containing Nanoscale Through-Pores by Selective APCVDChen, L. / Fu, X. A. / Zorman, C. A. / Mehregany, M. et al. | 2006
- 759
-
Sol-Gel Silicon Carbide for Photonic ApplicationsFriedel, B. / Greulich-Weber, S. et al. | 2006
- 763
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Formation, Morphology and Optical Properties of SiC NanopowderNychyporuk, T. / Marty, O. / Bluet, J. M. / Lysenko, V. / Perrin, R. / Guillot, G. / Barbier, D. et al. | 2006
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-
A Simple Method to Synthesize Nano-Sized 3C-SiC Powder Using Hexamethyldisilane in a CVD ReactorGupta, A. / Jacob, C. et al. | 2006
- 771
-
Fabrication and Electrical Transport Properties of CVD Grown Silicon Carbide Nanowires (SiC NWs) for Field Effect TransistorSeong, H. K. / Lee, S. Y. / Choi, H. J. / Kim, T. H. / Cho, N. K. / Nahm, K. S. / Lee, S. K. et al. | 2006
- 775
-
Thermodynamic Analysis of Synthetic Potentialities of the nSiC + SiO~2 Starting System: SiC Gas-Phase Transport via Si(g) and CO(g)Sevastyanov, V. G. / Pavelko, R. G. / Ezhov, Y. S. / Kuznetsov, N. T. et al. | 2006
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-
Ion Implantation Processing and Related Effects in SiCSvensson, B. G. / Hallen, A. / Wong-Leung, J. / Janson, M. S. / Linnarsson, M. K. / Kuznetsov, A. Y. / Alfieri, G. / Grossner, U. / Monakhov, E. V. / K-Nielsen, H. et al. | 2006
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-
Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC DevicesBuzzo, M. / Ciappa, M. / Treu, M. / Fichtner, W. et al. | 2006
- 791
-
Annealing Behavior of N^+-Implantation-Induced Defects in SiC at Low TemperaturesSatoh, M. / Suzuki, T. / Miyagawa, S. et al. | 2006
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-
Impact of Annealing Temperature Ramps on the Electrical Activation of N^+ and P^+ Co-Implanted SiC LayersBlanque, S. / Perez, R. / Mestres, N. / Contreras, S. / Camassel, J. / Godignon, P. et al. | 2006
- 799
-
Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)Satoh, M. / Suzuki, T. et al. | 2006
- 803
-
Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA EquipmentKinoshita, A. / Senzaki, J. / Katou, M. / Harada, S. / Okamato, M. / Nishizawa, S. / Fukuda, K. / Morigasa, F. / Endou, T. / Isii, T. et al. | 2006
- 807
-
Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation AnnealingShibagaki, M. / Satoh, M. / Kurematsu, Y. / Numajiri, K. / Watanabe, F. / Haga, S. / Miura, K. / Suzuki, T. / Miyagawa, S. et al. | 2006
- 811
-
Correlation between Current Transport and Defects in n^+/p 6H-SiC DiodesCanino, M. / Castaldini, A. / Cavallini, A. / Moscatelli, F. / Nipoti, R. / Poggi, A. et al. | 2006
- 815
-
Current Analysis of Ion Implanted p^+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar AmbientNipoti, R. / Bergamini, F. / Moscatelli, F. / Poggi, A. / Canino, M. / Bertuccio, G. et al. | 2006
- 819
-
Ion Implanted p^+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD ReactorBergamini, F. / Rao, S. P. / Poggi, A. / Tamarri, F. / Saddow, S. E. / Nipoti, R. et al. | 2006
- 823
-
Laser Direct Write Doping and Metallization Fabrication of Silicon Carbide PIN DiodesTian, Z. / Quick, N. R. / Kar, A. et al. | 2006
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-
Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modelling of Resistivity MeasurementsRambach, M. / Frey, L. / Bauer, A. J. / Ryssel, H. et al. | 2006
- 827
-
Extracting activation and compensation ratio from aluminum implanted 4H-SiC by modeling of resistivity measurementsRambach, M. / Frey, L. / Bauer, A.J. / Ryssel, H. et al. | 2006
- 831
-
Variations in the Effects of Implanting Al at Different Concentrations into SiCJones, K. A. / Zheleva, T. S. / Shah, P. B. / Derenge, M. A. / Freitas, J. A. / Gerardi, G. J. / Vispute, R. D. / Hullavard, S. / Dar, S. et al. | 2006
- 835
-
Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature AnnealingKinoshita, A. / Katou, M. / Kawasaki, M. / Kojima, K. / Fukuda, K. / Arai, K. / Morigasa, F. / Endou, T. / Isii, T. / Yashima, T. et al. | 2006
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Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVDRao, S. P. / Bergamini, F. / Nipoti, R. / Hoff, A. M. / Oborina, E. / Saddow, S. E. et al. | 2006
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Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing ProcessesNegoro, Y. / Kimoto, T. / Matsunami, H. / Pensl, G. et al. | 2006
- 847
-
Observation of thermal-annealing evolution of defects in ionimplanted 4H-SiC by luminescenceFreitas, J.A. / Jones, K.A. / Derenge, M.A. / Vispute, R.D. / Hullavard, S. et al. | 2006
- 847
-
Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by LuminsescenceFreitas, J. A. / Jones, K. A. / Derenge, M. A. / Vispute, R. D. / Hullavard, S. et al. | 2006
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High Dose High Temperature Ion Implantation of Ge into 4H-SiCKups, T. / Weih, P. / Voelskow, M. / Skorupa, W. / Pezoldt, J. et al. | 2006
- 855
-
Hydrogen-Induced Blistering of SiC: The Role of Post-Implant Multi-Step Annealing SequencesMalouf, G. / Poust, B. / Hayashi, S. / Yoshizawa, G. / Goorsky, M. S. et al. | 2006
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An Approach to Improving the Morphology and Reliability of n-SiC Ohmic Contacts to SiC Using Second-Metal ContactsErvin, M. H. / Jones, K. A. / Lee, U. / Das, T. / Wood, M. C. et al. | 2006
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Ni Graphite Intercalated Compounds in Ohmic Contact Formation on SiCLu, W. / Michel, J. A. / Lukehart, C. M. / Collins, W. E. / Mitchel, W. C. et al. | 2006
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Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite PrecipitationMaeyama, Y. / Nishikawa, K. / Fukuda, Y. / Shimizu, M. / Sato, M. / Ono, J. / Iwakuro, H. et al. | 2006
- 871
-
Structural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature AnnealingVassilevski, K. V. / Nikitina, I. P. / Horsfall, A. B. / Wright, N. G. / Johnson, C. M. / Malhan, R. K. / Yamamoto, T. et al. | 2006
- 875
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Die Bonding Issues on Silicon Carbide DiodesLee, S. Y. / Lee, J. S. / Kim, T. H. / Choi, S. Y. / Kim, H. J. / Bahng, W. / Kim, N. K. / Lee, S. K. et al. | 2006
- 879
-
Composite Ohmic Contacts to SiCAdedeji, A. V. / Ahyi, A. C. / Williams, J. R. / Bozack, M. J. / Mohney, S. E. / Liu, B. / Scofield, J. D. et al. | 2006
- 883
-
Tantalum-Ruthenium Diffusion Barriers for Contacts to SiCWang, S. H. / Arnold, O. / Eichfeld, C. M. / Mohney, S. E. / Adedeji, A. V. / Williams, J. R. et al. | 2006
- 887
-
Investigation of TiW Contacts to 4H-SiC Bipolar Junction DevicesLee, H. S. / Domeij, M. / Zetterling, C. M. / Ostling, M. / Lu, J. et al. | 2006
- 891
-
Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron SpectroscopiesGao, M. / Tumakha, S. P. / Onishi, T. / Tsukimoto, S. / Murakami, M. / Brillson, L. J. et al. | 2006
- 895
-
Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiCCrofton, J. / Williams, J. R. / Adedeji, A. V. / Scofield, J. D. / Dhar, S. / Feldman, L. C. / Bozack, M. J. et al. | 2006
- 899
-
Ohmic Contacts on p-Type SiC Using Al/C FilmsLu, W. / Landis, G. R. / Collins, W. E. / Mitchel, W. C. et al. | 2006
- 903
-
Ti/AlNi/W and Ti/Ni~2Si/W Ohmic Contacts to P-Type SiCTsao, B. H. / Lawson, J. / Scofield, J. D. et al. | 2006
- 907
-
Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal DiodesTumakha, S. P. / Porter, L. M. / Ewing, D. J. / Wahab, Q. / Ma, X. Y. / Sudarshan, T. S. / Brillson, L. J. et al. | 2006
- 911
-
A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiCEwing, D. J. / Wahab, Q. / Tumakha, S. P. / Brillson, L. J. / Ma, X. Y. / Sudarshan, T. S. / Porter, L. M. et al. | 2006
- 915
-
Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite EncapsulationWang, Y. / Mikhov, M. K. / Skromme, B. J. et al. | 2006
- 919
-
Diffusion Welding Techniques for Power SiC Schottky PackagingKorolkov, O. / Rang, T. / Syrkin, A. / Dmitriev, V. et al. | 2006
- 923
-
Evaluation of Schottky Barrier Height of Al, Ti, Au, and Ni Contacts to 3C-SiCSatoh, M. / Matsuo, H. et al. | 2006
- 927
-
Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier DiodesNakamura, T. / Miyanagi, T. / Kamata, I. / Tsuchida, H. et al. | 2006
- 931
-
High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche BreakdownVassilevski, K. V. / Nikitina, I. P. / Bhatnagar, P. / Horsfall, A. B. / Wright, N. G. / O Neill, A. G. / Uren, M. J. / Hilton, K. / Munday, A. / Hydes, A. et al. | 2006
- 935
-
Si/SiO~2 and SiC/SiO~2 Interfaces for MOSFETs - Challenges and AdvancesPantelides, S. T. / Wang, S. / Franceschetti, A. / Buczko, R. / Di Ventra, M. / Rashkeev, S. N. / Tsetseris, L. / Evans, M. H. / Batyrev, I. G. / Feldman, L. C. et al. | 2006
- 949
-
Nitrogen and Hydrogen Induced Trap Passivation at the SiO~2/4H-SiC InterfaceDhar, S. / Wang, S. R. / Ahyi, A. C. / Isaacs-Smith, T. / Pantelides, S. T. / Williams, J. R. / Feldman, L. C. et al. | 2006
- 955
-
Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO DielectricsTanimoto, S. et al. | 2006
- 961
-
High Channel Mobility 4H-SiC MOSFETsSveinbjornsson, E. O. / Gudjonsson, G. / Allerstam, F. / Olafsson, H. O. / Nilsson, P. A. / Zirath, H. / Rodle, T. / Jos, R. et al. | 2006
- 967
-
Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300^oC NO AnnealDas, M. K. / Hull, B. A. / Krishnaswami, S. / Husna, F. / Haney, S. / Lelis, A. J. / Scozzie, C. J. / Scofield, J. D. et al. | 2006
- 971
-
Characterization of 4H-SiC MOSFETs with NO-Annealed CVD OxideYano, H. / Hatayama, T. / Uraoka, Y. / Fuyuki, T. et al. | 2006
- 975
-
Investigation of SiO~2-SiC Interface by High-Resolution Transmission Electron MicroscopeDimitrijev, S. / Han, J. / Zou, J. et al. | 2006
- 979
-
Interfacial Properties of SiO~2 Grown on 4H-SiC: Comparison between N~2O and Wet O~2 Oxidation AmbientPoggi, A. / Moscatelli, F. / Scorzoni, A. / Marino, G. / Nipoti, R. / Sanmartin, M. et al. | 2006
- 983
-
Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiCMatocha, K. S. / Cowen, C. S. / Beaupre, R. / Tucker, J. B. et al. | 2006
- 987
-
Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N~2O AnnealingKimoto, T. / Kawano, H. / Noborio, M. / Suda, J. / Matsunami, H. et al. | 2006
- 991
-
Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO~2-InterfacesCiobanu, F. / Frank, T. / Pensl, G. / Afanas ev, V. / Shamuilia, S. / Schoner, A. / Kimoto, T. et al. | 2006
- 995
-
Process-Dependent Charges and Traps in Dielectrics on SiCKrishnan, B. / Das, H. / Koshka, Y. / Sankin, I. / Martin, P. A. / Mazzola, M. S. et al. | 2006
- 999
-
Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiCSenzaki, J. / Shimozato, A. / Fukuda, K. et al. | 2006
- 1003
-
Off-Angle Dependence of Characteristics of 4H-SiC-Oxide InterfacesHijikata, Y. / Yaguchi, H. / Yoshida, S. / Takata, Y. / Kobayashi, K. / Nohira, H. / Hattori, T. et al. | 2006
- 1007
-
On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor DevicesHabersat, D. B. / Lelis, A. J. / Lopez, G. / McGarrity, J. M. / McLean, F. B. et al. | 2006
- 1011
-
Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent RecombinationDautrich, M. S. / Lenahan, P. M. / Lelis, A. J. et al. | 2006
- 1015
-
Forming Gas Annealing of the Carbon P~b~C Center in Oxidized Porous 3C- and 4H-SiC: An EPR StudyCantin, J. L. / von Bardeleben, H. J. et al. | 2006
- 1019
-
Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO~2 Interface State Density Distribution?Thill, C. / Knaup, J. / Deak, P. / Frauenheim, T. / Choyke, W. J. et al. | 2006
- 1023
-
Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC SurfacesNie, S. / Feenstra, R. M. et al. | 2006
- 1027
-
Ellipsometric and XPS Studies of 4H-SiC/SiO~2 Interfaces, and Sacrificial Oxide Stripped 4H-SiC SurfacesGuy, O. J. / Chen, L. / Pope, G. / Teng, K. S. / Maffeis, T. / Wilks, S. P. / Mawby, P. A. / Jenkins, T. / Brieva, A. / Hayton, D. J. et al. | 2006
- 1031
-
Real Time Observation of SiC Oxidation Using an In Situ EllipsometerKakubari, K. / Kuboki, R. / Hijikata, Y. / Yaguchi, H. / Yoshida, S. et al. | 2006
- 1035
-
Fast Non-Contact Dielectric Characterization for SiC MOS ProcessingHoff, A. M. / Oborina, E. et al. | 2006
- 1039
-
High Temperature Reliability of SiC n-MOS Devices up to 630 ^oCGhosh, R. N. / Loloee, R. / Isaacs-Smith, T. / Williams, J. R. et al. | 2006
- 1043
-
High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1^o) Off-AngleFukuda, K. / Kato, M. / Harada, S. / Kojima, K. et al. | 2006
- 1047
-
PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) FacesPerez-Tomas, A. / Godignon, P. / Camassel, J. / Mestres, N. / Souliere, V. et al. | 2006
- 1051
-
Process Optimisation for <11-20> 4H-SiC MOSFET ApplicationsBlanc, C. / Tournier, D. / Godignon, P. / Brink, D. J. / Souliere, V. / Camassel, J. et al. | 2006
- 1055
-
Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO~2Pennington, G. / Potbhare, S. / Goldsman, N. / Habersat, D. B. / Lelis, A. J. et al. | 2006
- 1059
-
Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta~2Si/4H-SiC High-k MOSFETs Measured in Strong InversionPerez-Tomas, A. / Vellvehi, M. / Mestres, N. / Millan, J. / Vennegues, P. / Stoemenos, J. et al. | 2006
- 1063
-
Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETsAhyi, A. C. / Wang, S. R. / Williams, J. R. et al. | 2006
- 1067
-
High Temperature Annealing Study of Al~2O~3 Deposited by ALCVD on n-Type 4H-SiCAvice, M. / Grossner, U. / Nilsen, O. / Christensen, J. S. / Fjellvag, H. / Svensson, B. G. et al. | 2006
- 1071
-
Experimental and First-Principles Studies of the Band Alignment at the HfO~2/4H-SiC (0001) InterfaceTanner, C. M. / Choi, J. W. / Chang, J. P. et al. | 2006
- 1075
-
Structural and Morphological Properties of Ultrathin HfO~2 Dielectrics on 4H-SiC (0001)Tanner, C. M. / Lu, J. / Blom, H. O. / Chang, J. P. et al. | 2006
- 1079
-
Low Temperature Deposition of HfO~2 Gate Insulator on SiC by Metalorganic Chemical Vapor DepositionHino, S. / Hatayama, T. / Miura, N. / Ozeki, T. / Tokumitsu, E. et al. | 2006
- 1083
-
Electrical Properties of the La~2O~3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)~3 and H~2OMoon, J. H. / Eom, D. I. / No, S. Y. / Song, H. K. / Yim, J. H. / Na, H. J. / Lee, J. B. / Kim, H. J. et al. | 2006
- 1087
-
Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k DielectricsBrezeanu, M. / Badila, M. / Brezeanu, G. / Udrea, F. / Boianceanu, C. / Amaratunga, G. A. J. / Zekentes, K. et al. | 2006
- 1091
-
Preparation and Evaluation of Damage Free Surfaces on Silicon CarbideEverson, W. J. / Heydemann, V. D. / Gamble, R. D. / Snyder, D. W. / Goda, G. / Skowronski, M. / Grim, J. / Berkman, E. / Redwing, J. M. / Acord, J. D. et al. | 2006
- 1095
-
Selectivity and Residual Damage of Colloidal Silica Chemi-Mechanical Polishing of Silicon CarbideGrim, J. R. / Skowronski, M. / Everson, W. J. / Heydemann, V. D. et al. | 2006
- 1099
-
Augmented CMP Techniques for Silicon CarbideKuo, P. / Currier, I. et al. | 2006
- 1103
-
Characterization of Low Stress, Undoped LPCVD Polycrystalline SiC Films for MEMS ApplicationsDunning, J. / Fu, X. A. / Mehregany, M. / Zorman, C. A. et al. | 2006
- 1107
-
Mechanical Testing of Flexible Silicon Carbide Interconnect RibbonsPanday, R. / Fu, X. A. / Rajgopal, S. / Lisby, T. / Nikles, S. A. / Najafi, K. / Mehregany, M. et al. | 2006
- 1111
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Micromachining of Novel SiC on Si Structures for Device and Sensor ApplicationsFoerster, C. / Cimalla, V. / Stubenrauch, M. / Rockstuhl, C. / Brueckner, K. / Hein, M. / Pezoldt, J. / Ambacher, O. et al. | 2006
- 1115
-
Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate ProcessEvans, L. J. / Beheim, G. M. et al. | 2006
- 1119
-
Via Hole Formation in Silicon Carbide by Laser MicromachiningZekentes, K. / Zergioti, I. / Klini, A. / Constantinidis, G. et al. | 2006
- 1123
-
Development of a Microstrip SiC MMIC ProcessSudow, M. / Andersson, K. / Billstrom, N. / Nilsson, J. / Nilsson, P. A. / Rorsman, N. / Stahl, J. / Zirath, H. et al. | 2006
- 1129
-
Energy Efficiency: The Commercial Pull for SiC DevicesPalmour, J. W. et al. | 2006
- 1135
-
SiC Device Applications: Identifying and Developing Commercial ApplicationsHancock, J. W. et al. | 2006
- 1141
-
Developments in Hybrid Si - SiC Power ModulesSkibinski, G. / Braun, D. / Kirschnik, D. / Lukaszewski, R. et al. | 2006
- 1147
-
Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier DiodesStephani, D. / Schoerner, R. / Peters, D. / Friedrichs, P. et al. | 2006
- 1151
-
Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical ModelingIrace, A. / d Alessandro, V. / Breglio, G. / Spirito, P. / Bricconi, A. / Carta, R. / Raffo, D. / Merlin, L. et al. | 2006
- 1155
-
A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC ApplicationsTreu, M. / Rupp, R. / Tai, C. S. / Blaschitz, P. / Hilsenbeck, J. / Brunner, H. / Peters, D. / Elpelt, R. / Reimann, T. et al. | 2006
- 1159
-
Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS RectifiersZhu, L. / Chow, T. P. / Jones, K. A. / Scozzie, C. J. / Agarwal, A. K. et al. | 2006
- 1163
-
4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT ModulesTournier, D. / Waind, P. / Godignon, P. / Coulbeck, L. / Millan, J. / Bassett, R. et al. | 2006
- 1167
-
Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky DiodesRaineri, V. / Roccaforte, F. / Libertino, S. / Ruggiero, A. / Massimino, V. / Calcagno, L. et al. | 2006
- 1171
-
Design and Analysis of a Dual-Step Field-Plate Terminated 4H-SiC Schottky Diode Using SiO~2/High-K Dielectric StackKumta, A. / Rusli, E. / Tin, C. C. et al. | 2006
- 1175
-
Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical PropertiesOta, C. / Nishio, J. / Hatakeyama, T. / Shinohe, T. / Kojima, K. / Nishizawa, S. / Ohashi, H. et al. | 2006
- 1179
-
Optimization of a SiC Super-SBD Based on Scaling Properties of Power DevicesHatakeyama, T. / Ota, C. / Nishio, J. / Shinohe, T. et al. | 2006
- 1183
-
Fast Switching (41 MHz), 2.5 mOmegaΩcm^2, High Current 4H-SiC VJFETs for High Power and High Temperature ApplicationsCheng, L. / Casady, J. R. B. / Mazzola, M. S. / Bondarenko, V. / Kelley, R. L. / Sankin, I. / Merrett, J. N. / Casady, J. B. et al. | 2006
- 1187
-
10 kV, 87 mOmegacm^2 Normally-Off 4H-SiC Vertical Junction Field-Effect TransistorsLi, Y. Z. / Alexandrov, P. / Zhang, J. H. / Li, L. X. / Zhao, J. H. et al. | 2006
- 1191
-
Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETsZhao, J. H. / Alexandrov, P. / Li, Y. Z. / Li, L. X. / Sheng, K. / Lebron-Velilla, R. et al. | 2006
- 1195
-
Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFETBhatnagar, P. / Horsfall, A. B. / Wright, N. G. / Johnson, C. M. / Vassilevski, K. V. / O Neill, A. G. et al. | 2006
- 1199
-
Design Considerations of a New 4H-SiC Enhancement-Mode Lateral Channel Vertical JFET for Low-Loss Switching OperationChoi, Y. C. / Cha, H. Y. / Eastman, L. F. / Spencer, M. G. et al. | 2006
- 1203
-
Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal MaskMasuda, T. / Fujikawa, K. / Shibata, K. / Tamaso, H. / Hatsukawa, S. / Tokuda, H. / Saegusa, A. / Namikawa, Y. / Hayashi, H. et al. | 2006
- 1207
-
SiC Smart Power JFET Technology for High-Temperature ApplicationsSankin, I. / Bondarenko, V. / Kelley, R. L. / Casady, J. B. et al. | 2006
- 1211
-
Inherently Safe Resonant Reset Forward Converter Using a Bias-Enhanced SiC JFETKelley, R. L. / Brignac, T. / Mazzola, M. S. / Casady, J. B. et al. | 2006
- 1215
-
Current Sensing for SiC Power DevicesTournier, D. / Vellvehi, M. / Godignon, P. / Montserrat, J. / Planson, D. / Sarrus, F. et al. | 2006
- 1219
-
Fabrication of 700V SiC-SIT with Ultra-Low On-Resistance of 1.01mOmegaΩcm^2Tanaka, Y. / Yano, K. / Okamoto, M. / Takatsuka, A. / Fukuda, K. / Kasuga, M. / Arai, K. / Yatsuo, T. et al. | 2006
- 1223
-
RF and DC Characterization of Self-Aligned L-Band 4H-SiC Static Induction TransistorsMerrett, J. N. / Sankin, I. / Bondarenko, V. / Smith, C. E. / Kajfez, D. / Casady, J. R. B. et al. | 2006
- 1227
-
SiC MESFET with a Double Gate RecessNilsson, P. A. / Rorsman, N. / Sudow, M. / Andersson, K. / Hjelmgren, H. / Zirath, H. et al. | 2006
- 1231
-
High Power High Efficiency Lateral Epitaxy MESFETs in Silicon CarbideKonstantinov, A. O. / Svedberg, J. O. / Ray, I. C. / Harris, C. I. / Hallin, C. / Larsson, B. O. et al. | 2006
- 1235
-
RF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC SubstrateOgata, M. / Katakami, S. / Ono, S. / Arai, M. et al. | 2006
- 1239
-
High-Frequency SiC MESFETs with Silicon Dioxide/Silicon Nitride PassivationMatocha, K. S. / Kaminsky, E. / Vertiatchikh, A. / Casady, J. B. et al. | 2006
- 1243
-
Double Gate 180V-128mA/mm SiC-MESFET for Power Switch ApplicationsTournier, D. / Vellvehi, M. / Godignon, P. / Jorda, X. / Millan, J. et al. | 2006
- 1247
-
The Role of Residual Source/Drain Implant Damage Traps on SiC MESFET Drain I-V CharacteristicsAdjaye, J. / Mazzola, M. S. / Los, A. V. et al. | 2006
- 1251
-
Time Domain and Frequency Analysis of Random Telegraph Signal and the Contributions of G-R Centres to I-V Instabilities in 4H-SiC MESFETsTrabelsi, M. / Sghaier, N. / Bluet, J. M. / Yacoubi, N. / Guillot, G. / Brylinski, C. et al. | 2006
- 1255
-
SiC Power MOSFETs - Status, Trends and ChallengesPeters, D. / Schoerner, R. / Friedrichs, P. / Stephani, D. et al. | 2006
- 1261
-
Development of 8 mOmega-cm^2, 1.8 kV 4H-SiC DMOSFETsRyu, S. H. / Krishnaswami, S. / Hull, B. A. / Heath, B. / Das, M. K. / Richmond, J. T. / Agarwal, A. K. / Palmour, J. W. / Scofield, J. D. et al. | 2006
- 1265
-
4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation AnnealFedison, J. B. / Cowen, C. S. / Garrett, J. L. / Downey, E. T. / Kretchmer, J. W. / Klinger, R. L. / Peters, H. C. / Tucker, J. B. / Matocha, K. S. / Rowland, L. B. et al. | 2006
- 1269
-
Optimum Design of Short-Channel 4H-SiC Power DMOSFETsSaha, A. / Cooper, J. A. et al. | 2006
- 1273
-
Realization of Large Area Vertical 3C-SiC MOSFET DevicesSchoner, A. / Bakowski, M. / Ericsson, P. / Stromberg, H. / Nagasawa, H. / Abe, M. et al. | 2006
- 1277
-
High Power-Density 4H-SiC RF MOSFETsGudjonsson, G. / Allerstam, F. / Olafsson, H. O. / Nilsson, P. A. / Hjelmgren, H. / Andersson, K. / Sveinbjornsson, E. O. / Zirath, H. / Rodle, T. / Jos, R. et al. | 2006
- 1281
-
4.3 mOmegacm^2, 1100 V 4H-SiC Implantation and Epitaxial MOSFETHarada, S. / Kato, M. / Okamoto, M. / Yatsuo, T. / Fukuda, K. / Arai, K. et al. | 2006
- 1285
-
Fabrication and Performance of 1.2 kV, 12.9 mOmegacm^2 4H-SiC Epilayer Channel MOSFETTarui, Y. / Watanabe, T. / Fujihira, K. / Miura, N. / Nakao, Y. / Imaizumi, M. / Sumitani, H. / Takami, T. / Ozeki, T. / Oomori, T. et al. | 2006
- 1289
-
Switching Characteristics of SiC-MOSFET and SBD Power ModulesImaizumi, M. / Tarui, Y. / Kinouchi, S. / Nakatake, H. / Nakao, Y. / Watanabe, T. / Fujihira, K. / Miura, N. / Takami, T. / Ozeki, T. et al. | 2006
- 1293
-
Characterization of 4H-SiC MOSFETs Formed on the Different Trench SidewallsNakao, H. / Mikami, H. / Yano, H. / Hatayama, T. / Uraoka, Y. / Fuyuki, T. et al. | 2006
- 1297
-
The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) SubstratesFujisawa, H. / Tsuji, T. / Nishiura, M. et al. | 2006
- 1301
-
Fabrication of 4H-SiC p-Channel MOSFET with High Channel MobilityOkamoto, M. / Tanaka, M. / Yatsuo, T. / Fukuda, K. et al. | 2006
- 1305
-
Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETsNoborio, M. / Negoro, Y. / Suda, J. / Kimoto, T. et al. | 2006
- 1309
-
Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400^oC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation FurnaceKosugi, R. / Suzuki, K. / Takao, K. / Hayashi, Y. / Yatsuo, T. / Fukuda, K. / Ohashi, H. / Arai, K. et al. | 2006
- 1313
-
A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET DevicesKrishnaswami, S. / Ryu, S. H. / Heath, B. / Agarwal, A. K. / Palmour, J. W. / Geil, B. R. / Lelis, A. J. / Scozzie, C. J. et al. | 2006
- 1317
-
Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETsLelis, A. J. / Habersat, D. B. / Lopez, G. / McGarrity, J. M. / McLean, F. B. / Goldsman, N. et al. | 2006
- 1321
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Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device SimulationPotbhare, S. / Pennington, G. / Goldsman, N. / Lelis, A. J. / Habersat, D. B. / McLean, F. B. / McGarrity, J. M. et al. | 2006
- 1325
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Optimisation of 4H-SiC MOSFET Structures for Logic ApplicationsHorsfall, A. B. / Prentice, C. H. A. / Tappin, P. / Bhatnagar, P. / Wright, N. G. / Vassilevski, K. V. / Nikitina, I. P. et al. | 2006
- 1329
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Evolution of Drift-Free, High Power 4H-SiC PiN DiodesDas, M. K. / Sumakeris, J. J. / Hull, B. A. / Richmond, J. et al. | 2006
- 1335
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Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiCNeudeck, P. G. / Spry, D. J. / Trunek, A. J. et al. | 2006
- 1339
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High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction DiodesLevinshtein, M. E. / Ivanov, P. A. / Boltovets, M. S. / Krivutsa, V. A. / Palmour, J. W. / Das, M. K. / Hull, B. A. et al. | 2006
- 1343
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About the Nature of Recombination Current in 4H-SiC pn StructuresStrel chuk, A. M. / Mashichev, A. V. / Lebedev, A. A. / Volkova, A. N. / Zekentes, K. et al. | 2006
- 1347
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Charge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion MicrobeamsOhshima, T. / Satoh, T. / Oikawa, M. / Onoda, S. / Hirao, T. / Itoh, H. et al. | 2006
- 1351
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Demonstration of a 4H SiC Betavoltaic CellChandrashekhar, M. V. S. / Thomas, C. I. / Li, H. / Spencer, M. G. / Lal, A. et al. | 2006
- 1355
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High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching ApplicationsHull, B. A. / Das, M. K. / Richmond, J. T. / Heath, B. / Sumakeris, J. J. / Geil, B. R. / Scozzie, C. J. et al. | 2006
- 1359
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Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward DegradationNakayama, K. / Sugawara, Y. / Ishii, R. / Tsuchida, H. / Miyanagi, T. / Kamata, I. / Nakamura, T. et al. | 2006
- 1363
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Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial RefillLosee, P. A. / Li, C. H. / Kumar, R. J. / Chow, T. P. / Bhat, I. B. / Gutmann, R. J. / Stahlbush, R. E. et al. | 2006
- 1367
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Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AIN Capped AnnealingZhu, L. / Losee, P. A. / Chow, T. P. / Jones, K. A. / Scozzie, C. J. / Ervin, M. H. / Shah, P. B. / Derenge, M. A. / Vispute, R. D. / Venkatesan, T. et al. | 2006
- 1371
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Demonstration of High-Voltage 4H-SiC Bipolar RF Power LimiterSu, M. / Xin, X. B. / Li, L. X. / Zhao, J. H. et al. | 2006
- 1375
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Investigation of Packaged High-Voltage 4H SiC pin Diodes in the 20-700 ^oC Temperature RangeBoltovets, M. S. / Basanets, V. V. / Camara, N. / Krivutsa, V. A. / Zekentes, K. et al. | 2006
- 1379
-
CM-Wave Modulator with High-Voltage 4H SiC pin DiodesBoltovets, M. S. / Basanets, V. V. / Zorenko, A. V. / Krivutsa, V. A. / Camara, N. / Orechovskij, V. O. / Simonchuk, V. I. / Zekentes, K. et al. | 2006
- 1383
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Numerical Investigation of SiC Devices Performance Considering the Incomplete Dopant IonizationUdal, A. / Velmre, E. et al. | 2006
- 1387
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High Power Photoconductive Switch of 4H-SiC with Damage-Free Electrodes by Using n^+-GaN Subcontact LayerZhu, K. / Li, G. / Johnstone, D. / Fu, Y. / Leach, J. / Ganguly, B. / Litton, C. W. / Morkoc, H. et al. | 2006
- 1391
-
Advances in SiC GTO Development and Its ApplicationsSugawara, Y. et al. | 2006
- 1397
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A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current ModulesAgarwal, A. K. / Krishnaswami, S. / Damsky, B. / Richmond, J. / Capell, C. / Ryu, S. H. / Palmour, J. W. et al. | 2006
- 1401
-
Simulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction RectifierZhu, L. / Chow, T. P. et al. | 2006
- 1405
-
Simulations of 10 kV Trench Gate IGBTs on 4H-SiCZhang, Q. C. / Ryu, S. H. / Jonas, C. / Agarwal, A. K. / Palmour, J. W. et al. | 2006
- 1409
-
Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTsAgarwal, A. K. / Krishnaswami, S. / Richmond, J. / Capell, C. / Ryu, S. H. / Palmour, J. / Geil, B. R. / Katsis, D. / Scozzie, C. J. / Stahlbush, R. E. et al. | 2006
- 1413
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First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTsAgarwal, A. K. / Husna, F. / Haley, J. / Bartlow, H. / McCalpin, B. / Krishnaswami, S. / Capell, C. / Ryu, S. H. / Palmour, J. W. et al. | 2006
- 1417
-
1836 V, 4.7 mOmegaΩcm^2 High Power 4H-SiC Bipolar Junction TransistorZhang, J. H. / Wu, J. / Alexandrov, P. / Burke, T. / Sheng, K. / Zhao, J. H. et al. | 2006
- 1421
-
4H-SiC Bipolar Transistors with UHF and L-Band OperationPerez-Wurfl, I. / Zhao, F. / Huang, C. F. / Torvik, J. / Van Zeghbroeck, B. et al. | 2006
- 1425
-
Current Gain Dependence on Emitter Width in 4H-SiC BJTsDomeij, M. / Lee, H. S. / Zetterling, C. M. / Ostling, M. / Schoner, A. et al. | 2006
- 1429
-
Optimization of the Specific On-Resistance of 4H-SiC BJTsBalachandran, S. / Chow, T. P. / Agarwal, A. K. et al. | 2006
- 1433
-
Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar TransistorsBalachandran, S. / Chow, T. P. / Agarwal, A. K. et al. | 2006
- 1437
-
High Temperature Characterization of 4H-SiC Bipolar Junction TransistorsKrishnaswami, S. / Agarwal, A. K. / Richmond, J. / Capell, C. / Ryu, S. H. / Palmour, J. W. / Geil, B. R. / Katsis, D. / Scozzie, C. J. et al. | 2006
- 1441
-
Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTsIvanov, P. A. / Levinshtein, M. E. / Agarwal, A. K. / Krishnaswami, S. / Palmour, J. W. et al. | 2006
- 1445
-
400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200^oC Baseplate TemperatureRichmond, J. / Ryu, S. H. / Krishnaswami, S. / Agarwal, A. K. / Palmour, J. W. / Geil, B. R. / Katsis, D. / Scozzie, C. J. et al. | 2006
- 1449
-
Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching DevicesSui, Y. / Walden, G. G. / Wang, X. K. / Cooper, J. A. et al. | 2006
- 1453
-
Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)Hayashi, T. / Shimoida, Y. / Tanaka, H. / Yamagami, S. / Tanimoto, S. / Hoshi, M. et al. | 2006
- 1457
-
SiC-Based MOSFETs for Harsh Environment Emissions SensorsSandvik, P. / Ali, M. / Tilak, V. / Matocha, K. S. / Stauden, T. / Tucker, J. B. / Deluca, J. / Ambacher, O. et al. | 2006
- 1461
-
Development of Ultra High Sensitivity UV Silicon Carbide DetectorsYan, F. / Xin, X. B. / Alexandrov, P. / Stahle, C. M. / Guan, B. / Zhao, J. H. et al. | 2006
- 1465
-
Silicon Carbide Power Diodes as Radiation DetectorsPhlips, B. F. / Hobart, K. D. / Kub, F. J. / Stahlbush, R. E. / Das, M. K. / De Geronimo, G. / O Connor, P. et al. | 2006
- 1469
-
Minimum Ionizing Particle Detector Based on p^+n Junction SiC DiodeMoscatelli, F. / Scorzoni, A. / Poggi, A. / Bruzzi, M. / Lagomarsino, S. / Sciortino, S. / Wagner, G. / Nipoti, R. et al. | 2006
- 1473
-
Radiation Hard Devices Based on SiCKalinina, E. / Strel chuk, A. M. / Lebedev, A. A. / Strokan, N. B. / Ivanov, A. M. / Kholuyanov, G. et al. | 2006
- 1477
-
The Limit of SiC Detector Energy Resolution in Ion SpectometryYakimova, R. / Lebedev, A. A. / Ivanov, A. M. / Strokan, N. B. / Syvajarvi, M. et al. | 2006
- 1483
-
Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiCEddy, C. R. / Bassim, N. D. / Mastro, M. A. / Henry, R. L. / Twigg, M. E. / Holm, R. T. / Culbertson, J. C. / Neudeck, P. G. / Powell, J. A. / Trunek, A. J. et al. | 2006
- 1489
-
Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC SubstratesAs, D. J. / Potthast, S. / Schormann, J. / Li, S. F. / Lischka, K. / Nagasawa, H. / Abe, M. et al. | 2006
- 1493
-
Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich ConditionShimizu, M. / Chonan, H. / Piao, G. / Okumura, H. / Nakanishi, H. et al. | 2006
- 1497
-
The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) SubstratesGu, Z. / Edgar, J. H. / Raghothamachar, B. / Dudley, M. / Zhuang, D. / Sitar, Z. et al. | 2006
- 1501
-
Growth of AIN and AIN-SiC Solid Solution by Sublimation MethodAnikin, M. / Chaussende, D. / Pernot, E. / Chaix-Pluchery, O. / Roussel, H. / Pons, M. / Madar, R. et al. | 2006
- 1505
-
Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network TemplatesOzgur, U. / Litton, C. W. / Fu, Y. / Moon, Y. T. / Yun, F. / Everitt, H. O. / Morkoc, H. et al. | 2006
- 1509
-
Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiCBassim, N. D. / Twigg, M. E. / Mastro, M. A. / Neudeck, P. G. / Eddy, C. R. / Henry, R. L. / Holm, R. N. / Powell, J. A. / Trunek, A. J. et al. | 2006
- 1513
-
Strain Relaxation in GaN/AIN Films Grown on Vicinal and On-Axis SiC SubstratesBai, J. / Huang, X. / Raghothamachar, B. / Dudley, M. / Wagner, B. / Davis, R. F. / Wu, L. / Zhu, Y. et al. | 2006
- 1517
-
Anisotropic Properties of GaN Studied by Raman ScatteringLin, H. C. / Feng, Z. C. / Chen, M. S. / Shen, Z. X. / Lu, W. / Collins, W. E. et al. | 2006
- 1521
-
Structural Characterization of Bulk AIN Single Crystals Grown from Self-Seeding and Seeding by SiC SubstratesRaghothamachar, B. / Dalmau, R. / Dudley, M. / Schlesser, R. / Zhuang, D. / Herro, Z. / Sitar, Z. et al. | 2006
- 1525
-
Asymmetric Interface Densities on n and p Type GaN MOS CapacitorsHuang, W. / Khan, T. / Chow, T. P. et al. | 2006
- 1529
-
Effects of Rapid Thermal Annealing Treatment on the Surface Band Bending of n-type GaN Studied by Surface Potential Electric Force MicroscopyChevtchenko, S. / Fan, Q. / Litton, C. W. / Baski, A. A. / Morkoc, H. et al. | 2006
- 1533
-
Quantitative Mobility Spectrum Analysis of AlGaN/GaN Heterostructures Using Variable-Field Hall MeasurementsBiyikli, N. / Litton, C. W. / Xie, J. / Moon, Y. T. / Yun, F. / Stefanita, C. G. / Bandyopadhyay, S. / Meyer, J. R. / Morkoc, H. et al. | 2006
- 1537
-
Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC HeterostructuresLebedev, A. A. / Ledyaev, O. Y. / Strel chuk, A. M. / Kuznetsov, A. N. / Cherenkov, A. E. / Nikolaev, A. E. / Zubrilov, A. S. / Seredova, N. V. / Volkova, A. A. et al. | 2006
- 1541
-
Structural Properties and Electrical Characteristics of Homoepitaxial GaN PiN DiodesCao, X. A. / Larsen, M. / Lu, H. / Arthur, S. D. et al. | 2006
- 1545
-
Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar TransistorsSuda, J. / Nakano, Y. / Shimada, S. / Amari, K. / Kimoto, T. et al. | 2006
- 1549
-
Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL)Lee, S. K. / Seong, H. K. / Choi, K. C. / Cho, N. K. / Choi, H. J. / Suh, E. K. / Nahm, K. S. et al. | 2006
- 1553
-
GaN Resistive Gas Sensors for Hydrogen DetectionYun, F. / Fawcett, T. J. / Chevtchenko, S. / Moon, Y. T. / Morkoc, H. / Wolan, J. T. et al. | 2006
- 1559
-
Atomic Layer Epitaxy of (Si~1~-~xC~1~-~y)Ge~x~+~y Layers on 4H-SiCPezoldt, J. / Kups, T. / Weih, P. / Stauden, T. / Ambacher, O. et al. | 2006
- 1563
-
Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)Ferro, G. / Polychroniadis, E. K. / Panknin, D. / Skorupa, W. / Stoemenos, J. / Monteil, Y. et al. | 2006
- 1567
-
Optical Characterization of ZnO Materials Grown by Modified Melt Growth TechniqueFeng, Z. C. / Yu, J. W. / Wang, J. B. / Varatharajan, R. / Nemeth, B. / Nause, J. / Ferguson, I. / Lu, W. / Collins, W. E. et al. | 2006
- 1571
-
The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for DevicesLitton, C. W. / Alivov, Y. I. / Johnstone, D. / Ozgur, U. / Avrutin, V. S. / Fan, Q. / Akarca-Biyikli, S. S. / Zhu, K. / Morkoc, H. et al. | 2006
- 1575
-
Role of Oxygen in Growth of Carbon Nanotubes on SiCLu, W. / Boeckl, J. / Mitchel, W. C. / Rigueur, J. / Collins, W. E. et al. | 2006
- 1579
-
Structural and Electrical Characteristics of Carbon Nanotubes Formed on Silicon Carbide Substrates by Surface DecompositionBoeckl, J. / Mitchel, W. C. / Lu, W. / Rigueur, J. et al. | 2006
- 1583
-
First Principles Modelling of Scroll-to-Nanotube Defect: Screw-Type DislocationSuarez-Martinez, I. / Savini, G. / Heggie, M. I. et al. | 2006
- 1587
-
SNOM Investigation of Surface Morphology Changes during Cr/Au Contact Fabrication on Single-Crystal CVD DiamondDoneddu, D. / Guy, O. J. / Baylis, R. M. / Chen, L. / Dunstan, P. R. / Mawby, P. A. / Pirri, C. F. / Ferrero, S. / Twitchen, D. / Tajani, A. et al. | 2006