Effects of cap layer and grain structure on electromigration reliability of Cu/low-k interconnects for 45 nm technology node (English)
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- New search for: Zhou, J.P.
- New search for: Im, J.
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- New search for: Aubel, O.
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- New search for: Zschech, E.
- New search for: Zhang, L.
- New search for: Zhou, J.P.
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In:
IRPS, IEEE International Reliability Physics Symposium, 2010
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581-585
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2010
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ISBN:
- Conference paper / Print
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Title:Effects of cap layer and grain structure on electromigration reliability of Cu/low-k interconnects for 45 nm technology node
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Contributors:Zhang, L. ( author ) / Zhou, J.P. ( author ) / Im, J. ( author ) / Ho, P.S. ( author ) / Aubel, O. ( author ) / Hennesthal, C. ( author ) / Zschech, E. ( author )
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Published in:
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Publisher:
- New search for: IEEE Operations Center
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Place of publication:Piscataway
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Publication date:2010
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Size:5 Seiten, 11 Quellen
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ISBN:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Using a Smart Grid to evolve a reliable power systemGellings, C et al. | 2010
- 1
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A review on the reliability of GaN-based laser diodesTrivellin, N / Meneghini, M / Zanoni, E / Orita, K / Yuri, Masaaki / Tanaka, Tsuyoshi / Ueda, Daisuke / Meneghesso, Gaudenzio et al. | 2010
- 1
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Table of contents| 2010
- 1
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Biographies| 2010
- 1
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Tutorial program| 2010
- 1
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[Copyright notice]| 2010
- 1
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Committees| 2010
- 7
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The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stressReisinger, H. / Grasser, T. / Gustin, W. / Schluender, C. et al. | 2010
- 16
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The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature InstabilityGrasser, T. / Reisinger, H. / Wagner, P. / Schanovsky, F. / Goes, W. / Kaczer, B. et al. | 2010
- 50
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PBTI relaxation dynamics after AC vs. DC stress in high-k/metal gate stacksZhao, K. / Stathis, J.H. / Kerber, A. / Cartier, E. et al. | 2010
- 104
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Mature processability and manufacturability by characterizing VT and Vmin behaviors induced by NBTI and AHTOL testPark, Jongwoo / Ha, Sungmok / Lim, Sunme / Yoo, Jae-Yoon / Park, Junkyun / Bae, Kidan / Kim, Gunrae / Kim, Min / Kim, Yongshik et al. | 2010
- 139
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Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTsMalbert, N. / Labat, N. / Curutchet, A. / Sury, C. / Hoel, V. / Jaeger, J.C. / Defrance, N. / Douvry, Y. / Dua, C. / Oualli, M. et al. | 2010
- 156
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Reliability of SiC power devices and its influence on their commercialization - review, status, and remaining issuesTreu, M. / Rupp, R. / Solkner, G. et al. | 2010
- 175
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Modeling the lifetime of a lateral DMOS transistor in repetitive clamping modeRiedlberger, E. / Keller, R. / Reisinger, H. / Gustin, W. / Spitzer, A. / Stecher, M. / Jungemann, C. et al. | 2010
- 265
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Electromigration of NiSi poly gated electrical fuse and its resistance behaviors induced by high temperatureKang, Han-Byul / Park, Jongwoo / Kim, Gun-Rae / Park, Hyun-Woo / Lee, Woon-Hak / Yoon, Joo-Byoung et al. | 2010
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Reliability characterization of 32nm high-K and Metal-Gate logic transistor technologyPae, Sangwoo / Ashwin, Ashok / Choi, Jingyoo / Ghani, T. / He, Jun / Lee, Seok-Hee / Lemay, K. / Liu, M. / Lu, R. / Packan, P. et al. | 2010
- 299
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Re-consideration of influence of silicon wafer surface orientation on gate oxide reliability from TDDB statistics point of viewMitani, Y. / Toriumi, A. et al. | 2010
- 306
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Photovoltaic module reliability studies at the Florida Solar Energy CenterDhere, N.G. / Pethe, S.A. / Kaul, A. et al. | 2010
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Reliability aspects of organic light emitting diodesRiedl, T. / Winkler, T. / Schmidt, H. / Meyer, J. / Schneidenbach, D. / Johannes, H. / Kowalsky, W. / Weimann, T. / Hinze, P. et al. | 2010
- 424
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Novel TDDB mechanism for p-FET accelerated by hydrogen from HfSiON filmHirano, I. / Kato, K. / Nakasaki, Y. / Fukatsu, S. / Mitani, Y. / Goto, M. / Inumiya, S. / Sekine, K. / Sato, M. et al. | 2010
- 430
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Buckling, wrinkling and debonding in thin film systemsGoyal, S. / Srinivasan, K. / Subbarayan, G. / Siegmund, T. et al. | 2010
- 522
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A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD eventsMeneghini, M. / Tazzoli, A. / Ranzato, E. / Trivellin, N. / Meneghesso, G. / Zanoni, E. / Pavesi, M. / Manfredi, M. / Butendeich, R. / Zehnder, U. et al. | 2010
- 562
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A simple electrical method for etch bias and process reliability determinationYiang, Kok-Yong / Chin, M. / Marathe, A. / Aubel, O. et al. | 2010
- 566
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Comprehensive investigations of CoWP metal-cap impacts on low-k TDDB for 32nm technology applicationChen, F. / Shinosky, M. / Li, B. / Christiansen, C. / Lee, T. / Aitken, J. / Badami, D. / Huang, E. / Bonilla, G. / Ko, T. et al. | 2010
- 574
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EM and SM induced degradation dynamics in copper interconnects studied using electron microscopy and X-ray microscopyZschech, Ehrenfried / Huebner, Rene / Aubel, Oliver / Ho, Paul S. et al. | 2010
- 581
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Effects of cap layer and grain structure on electromigration reliability of Cu/low-k interconnects for 45 nm technology nodeZhang, L. / Zhou, J.P. / Im, J. / Ho, P.S. / Aubel, O. / Hennesthal, C. / Zschech, E. et al. | 2010
- 683
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Statistical Evaluation of Dynamic Junction Leakage Current Fluctuation Using a Simple Arrayed Capacitors CircuitAbe, K. / Fujisawa, T. / Suzuki, H. / Watabe, S. / Kuroda, R. / Sugawa, S. / Teramoto, A. / Ohmi, T. et al. | 2010
- 698
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New electromigration validation: Via node vector methodPark, Young-Joon / Jain, P. / Krishnan, S. et al. | 2010
- 724
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Assessing the degradation mechanisms and current limitation design rules of SiCr-based thin-film resistors in integrated circuitsLi, Yuan / Donnet, D. / Grzegorczyk, A. / Cavelaars, J. / Kuper, F. et al. | 2010
- 778
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New statistical model to decode the reliability and Weibull slope of high- kappa and interfacial layer in a dual layer dielectric stackRaghavan, N. / Pey, K.L. / Liu, W.H. / Li, X. et al. | 2010
- 822
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A built-in aging detection and compensation technique for improving reliability of nanoscale CMOS designsDadgour, H.F. / Banerjee, K. et al. | 2010
- 826
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A test concept for circuit level aging demonstrated by a differential amplifierChouard, F.R. / Werner, C. / Schmitt-Landsiedel, D. / Fulde, M. et al. | 2010
- 835
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ESD protection for high-speed receiver circuitsJack, Nathan / Rosenbaum, Elyse et al. | 2010
- 890
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Ultra-low-k dielectric degradation before breakdownBreuer, T. / Kerst, U. / Boit, C. / Langer, E. / Ruelke, H. et al. | 2010
- 988
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Pattern-independent, fine-morphology Ni-Pt silicide formation by partial conversion with low metal-consumption ratioFutase, T. / Kamino, T. / Hashikawa, N. / Inaba, Y. / Fujiwara, T. / Yamamoto, H. / Tanimoto, H. et al. | 2010
- 995
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- 1008
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- 1069
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A multi-probe correlated bulk defect characterization scheme for ultra-thin high- kappa dielectricMasuduzzaman, M. / Islam, A.E. / Alam, M.A. et al. | 2010
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