VT-VSUB characterization of AlGaN/GaN HFET with p-type body layer (English)
- New search for: Hu, Cheng-Yu
- New search for: Kikuta, D.
- New search for: Sugimoto, M.
- New search for: Ao, Jin-Ping
- New search for: Ohno, Y.
- New search for: Hu, Cheng-Yu
- New search for: Kikuta, D.
- New search for: Sugimoto, M.
- New search for: Ao, Jin-Ping
- New search for: Ohno, Y.
In:
IEEE Transactions on Electron Devices
;
58
, 12
;
4265-4271
;
2011
-
ISSN:
- Article (Journal) / Print
-
Title:VT-VSUB characterization of AlGaN/GaN HFET with p-type body layer
-
Contributors:Hu, Cheng-Yu ( author ) / Kikuta, D. ( author ) / Sugimoto, M. ( author ) / Ao, Jin-Ping ( author ) / Ohno, Y. ( author )
-
Published in:IEEE Transactions on Electron Devices ; 58, 12 ; 4265-4271
-
Publisher:
-
Publication date:2011
-
Size:7 Seiten, 18 Quellen
-
ISSN:
-
Coden:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
-
Keywords:
-
Source:
Table of contents – Volume 58, Issue 12
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 4119
-
Confidentiality of the Review ProcessJindal, R. P. et al. | 2011
- 4119
-
EDITORIAL - Confidentiality of the Review ProcessJindal, R P et al. | 2011
- 4120
-
Kudos to Our ReviewersVerret, Douglas et al. | 2011
- 4121
-
2011 Golden List| 2011
- 4145
-
Silicon and Column IV Semiconductor Devices - Shear Piezoresistance in MOSFET Devices Under General Operating ConditionsSbierski, B et al. | 2011
- 4145
-
Shear Piezoresistance in MOSFET Devices Under General Operating ConditionsSbierski, B. / Gieschke, P. / Paul, O. et al. | 2011
- 4155
-
Comparative Simulation Study of the Different Sources of Statistical Variability in Contemporary Floating-Gate Nonvolatile MemoryRoy, G. / Ghetti, A. / Benvenuti, A. / Erlebach, A. / Asenov, A. et al. | 2011
- 4164
-
Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect TransistorsSeongjae Cho, / Jae Sung Lee, / Kyung Rok Kim, / Byung-Gook Park, / Harris, J. S. / In Man Kang, et al. | 2011
- 4172
-
On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent MobilityRudenko, T. / Kilchytska, V. / Arshad, M. K. M. / Raskin, J-P / Nazarov, A. / Flandre, D. et al. | 2011
- 4180
-
On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part II—Effect of Drain VoltageRudenko, T. / Kilchytska, V. / Arshad, M. K. M. / Raskin, J.-P / Nazarov, A. / Flandre, D. et al. | 2011
- 4189
-
Investigation of Tunneling Current in $\hbox{SiO}_{2}/ \hbox{HfO}_{2}$ Gate Stacks for Flash Memory ApplicationsChakrabarti, B. / Heesoo Kang, / Brennan, B. / Tae Joo Park, / Cantley, K. D. / Pirkle, A. / McDonnell, S. / Jiyoung Kim, / Wallace, R. M. / Vogel, E. M. et al. | 2011
- 4189
-
Investigation of Tunneling Current in SiO2/HfO2 Gate Stacks for Flash Memory ApplicationsChakrabarti, B et al. | 2011
- 4189
-
Investigation of Tunneling Current in Formula Not Shown Gate Stacks for Flash Memory ApplicationsChakrabarti, B. / Kang, H. / Brennan, B. / Park, T. J. / Cantley, K. D. / Pirkle, A. / McDonnell, S. / Kim, J. / Wallace, R. M. / Vogel, E. M. et al. | 2011
- 4196
-
Low Frequency Noise in Strained Si Heterojunction Bipolar TransistorsFjer, M. / Persson, S. / Escobedo-Cousin, E. / O'Neill, A. G. et al. | 2011
- 4204
-
Capacitance Compact Model for Ultrathin Low-Electron-Effective-Mass MaterialsMudanai, S. / Roy, A. / Kotlyar, R. / Rakshit, T. / Stettler, M. et al. | 2011
- 4212
-
High-Density Three-Dimensional Stacked nand Flash With Common Gate Structure and Shield LayerMin-Kyu Jeong, / Sung-Min Joe, / Hyungcheol Shin, / Byung-Gook Park, / Jong-Ho Lee, et al. | 2011
- 4219
-
A Full-Range Drain Current Model for Double-Gate Junctionless TransistorsDuarte, J. P. / Sung-Jin Choi, / Yang-Kyu Choi, et al. | 2011
- 4226
-
Double-Halo Field-Effect Transistor—A Multifunction Device to Sustain the Speed and Density Rate of Modern Integrated CircuitsMarino, F. A. / Meneghesso, G. et al. | 2011
- 4235
-
Fluorinated SrTiO3 as Charge-Trapping Layer for Nonvolatile Memory ApplicationsHuang, X D et al. | 2011
- 4235
-
Fluorinated Formula Not Shown as Charge-Trapping Layer for Nonvolatile Memory ApplicationsHuang, X. D. / Sin, J. K. / Lai, P. T. et al. | 2011
- 4235
-
Fluorinated $\hbox{SrTiO}_{3}$ as Charge-Trapping Layer for Nonvolatile Memory ApplicationsHuang, X. D. / Sin, J. K. O. / Lai, P. T. et al. | 2011
- 4241
-
Asymmetrically Doped FinFETs for Low-Power Robust SRAMsMoradi, F. / Gupta, S. K. / Panagopoulos, G. / Wisland, D. T. / Mahmoodi, H. / Roy, K. et al. | 2011
- 4250
-
Drain-Dependence of Tunnel Field-Effect Transistor Characteristics: The Role of the ChannelMallik, A. / Chattopadhyay, A. et al. | 2011
- 4258
-
Ultrawide Frequency Range Crosstalk Into Standard and Trap-Rich High Resistivity Silicon SubstratesBen Ali, K. / Roda Neve, C. / Gharsallah, A. / Raskin, J.-P et al. | 2011
- 4265
-
Compound Semiconductor Devices - VT — VSUB Characterization of AlGaN/GaN HFET With p-Type Body LayerHu, C-Y et al. | 2011
- 4265
-
$V_{T} - V_{\rm SUB}$ Characterization of AlGaN/GaN HFET With p-Type Body LayerCheng-Yu Hu, / Kikuta, D. / Sugimoto, M. / Jin-Ping Ao, / Ohno, Y. et al. | 2011
- 4265
-
VT-VSUB characterization of AlGaN/GaN HFET with p-type body layerHu, Cheng-Yu / Kikuta, D. / Sugimoto, M. / Ao, Jin-Ping / Ohno, Y. et al. | 2011
- 4265
-
Formula Not Shown Characterization of AlGaN/GaN HFET With p-Type Body LayerHu, C. Y. / Kikuta, D. / Sugimoto, M. / Ao, J. P. / Ohno, Y. et al. | 2011
- 4272
-
A Theoretical Calculation of the Impact of GaN Cap and $\hbox{Al}_{x}\hbox{Ga}_{1-x}\hbox{N}$ Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a $\hbox{GaN}/\hbox{Al}_{x}\hbox{Ga}_{1-x}\hbox{N/GaN}$ HeterostructureGuipeng Liu, / Ju Wu, / Yanwu Lu, / Biao Zhang, / Chengming Li, / Ling Sang, / Yafeng Song, / Kai Shi, / Xianglin Liu, / Shaoyan Yang, et al. | 2011
- 4272
-
A Theoretical Calculation of the Impact of GaN Cap and AlxGa1-xN Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/AlxGa1-xN/GaN HeterostructureLiu, G et al. | 2011
- 4272
-
A Theoretical Calculation of the Impact of GaN Cap and Formula Not Shown Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a Formula Not Shown HeterostructureLiu, G. / Wu, J. / Lu, Y. / Zhang, B. / Li, C. / Sang, L. / Song, Y. / Shi, K. / Liu, X. / Yang, S. et al. | 2011
- 4276
-
Comprehensive Temperature-Dependent Studies of Metamorphic High Electron Mobility Transistors With Double and Single Formula Not Shown -Doped StructuresHuang, C. C. / Chen, T. Y. / Hsu, C. S. / Chen, C. C. / Kao, C. I. / Liu, W. C. et al. | 2011
- 4276
-
Comprehensive Temperature-Dependent Studies of Metamorphic High Electron Mobility Transistors With Double and Single δ-Doped StructuresHuang, C-C et al. | 2011
- 4276
-
Comprehensive Temperature-Dependent Studies of Metamorphic High Electron Mobility Transistors With Double and Single $\delta$-Doped StructuresChien-Chang Huang, / Tai-You Chen, / Chi-Shiang Hsu, / Chun-Chia Chen, / Chung-I Kao, / Wen-Chau Liu, et al. | 2011
- 4283
-
Conduction Mechanisms and Low-Temperature Anomalies in the Electrical Characteristics of Ga– Formula Not Shown —A Liquid Metal Schottky StructureMathai, A. J. et al. | 2011
- 4283
-
Conduction Mechanisms and Low-Temperature Anomalies in the Electrical Characteristics of Ga– $\hbox{pWSe}_{2}$—A Liquid Metal Schottky StructureMathai, A. J. et al. | 2011
- 4283
-
Conduction Mechanisms and Low-Temperature Anomalies in the Electrical Characteristics of Ga-pWSe2 — A Liquid Metal Schottky StructureMathai, A J et al. | 2011
- 4290
-
$\hbox{Al}_{y}\hbox{Ga}_{1-y}\hbox{N/Al}_{x} \hbox{Ga}_{1-x}\hbox{N/GaN}$ Double-Heterostructure Detector With Three Ultraviolet Spectral Band ResponsesBo Gao, / Hongxia Liu, / Jinbin Fan, / Shulong Wang, et al. | 2011
- 4290
-
Formula Not Shown Double-Heterostructure Detector With Three Ultraviolet Spectral Band ResponsesGao, B. / Liu, H. / Fan, J. / Wang, S. et al. | 2011
- 4290
-
AlyGa(1-y)N/Al(x)Ga(1-x)N/GaN Double-heterostructure Detector With Three Ultraviolet Spectral Band ResponsesGao, Bo / Liu, Hongxia / Fan, Jinbin / Wang, Shulong et al. | 2011
- 4290
-
AlyGa1-xN/GaN/GaN Double-Heterostructure Detector With Three Ultraviolet Spectral Band ResponsesGao, B et al. | 2011
- 4297
-
Fabrication of a Formula Not Shown Contact on ZnO Films With High Thermal Stability and Low ResistanceChai, J. W. / Yang, M. / Chi, D. Z. / Ong, J. L. / Wang, S. J. / Zhang, Z. / Pan, J. S. / Feng, Y. P. / Chua, S. J. et al. | 2011
- 4297
-
Fabrication of a TiNx/Ni/Au Contact on ZnO Films With High Thermal Stability and Low ResistanceChai, J W et al. | 2011
- 4297
-
Fabrication of a $\hbox{TiN}_{x}/\hbox{Ni/Au}$ Contact on ZnO Films With High Thermal Stability and Low ResistanceChai, J. W. / Yang, M. / Chi, D. Z. / Ong, J. L. T. / Wang, S. J. / Zhang, Z. / Pan, J. S. / Feng, Y. P. / Chua, S. J. et al. | 2011
- 4301
-
Nonlinear Steady-State III–V FET Model for Microwave Antenna Switch ApplicationsTakatani, S. / Cheng-Duan Chen, et al. | 2011
- 4309
-
Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament GrowthIelmini, D. et al. | 2011
- 4309
-
Thin Film Transistors - Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament GrowthIelmini, D et al. | 2011
- 4318
-
Effects of High Electric Fields on Tunneling-Assisted Optical Electron Transitions in a-SiPirc, M. / Furlan, J. et al. | 2011
- 4324
-
Analytical Expressions for Doped Polycrystalline Silicon Thin-Film Transistors in Above-Threshold Regime Consistent With Pao–Sah Model Considering Trapped Charge EffectHongyu He, / Xueren Zheng, et al. | 2011
- 4333
-
Design Space Exploration of Typical STT MTJ Stacks in Memory Arrays in the Presence of Variability and DisturbancesAugustine, C. / Raychowdhury, A. / Somasekhar, D. / Tschanz, J. / De, V. / Roy, K. et al. | 2011
- 4344
-
Electrical Properties and Stability of Dual-Gate Coplanar Homojunction DC Sputtered Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors and Its Application to AM-OLEDsGwanghyeon Baek, / Abe, K. / Kuo, A. / Kumomi, H. / Kanicki, J. et al. | 2011
- 4344
-
Optoelectronics, Displays, and Imaging - Electrical Properties and Stability of Dual-Gate Coplanar Homojunction DC Sputtered Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors and Its Application to AM-OLEDsBaek, G et al. | 2011
- 4354
-
Materials, Processing, and Packaging - Variable Ramp Rate Breakdown Experiments and the Role of Metal Injection in Low-k DielectricsPlawsky, J L et al. | 2011
- 4354
-
Variable Ramp Rate Breakdown Experiments and the Role of Metal Injection in Low- Formula Not Shown DielectricsPlawsky, J. L. / Borja, J. / Williams, B. / Riley, M. J. / Gill, W. N. et al. | 2011
- 4354
-
Variable Ramp Rate Breakdown Experiments and the Role of Metal Injection in Low- $k$ DielectricsPlawsky, J. L. / Borja, J. / Williams, B. / Riley, M. J. / Gill, W. N. et al. | 2011
- 4361
-
Voltage Snapback in Amorphous-GST Memory Devices: Transport Model and ValidationRudan, M. / Giovanardi, F. / Piccinini, E. / Buscemi, F. / Brunetti, R. / Jacoboni, C. et al. | 2011
- 4361
-
Solid State Device Phenomena - Voltage Snapback in Amorphous-GST Memory Devices: Transport Model and ValidationRudan, M et al. | 2011
- 4370
-
Investigation of Trap Spacing for the Amorphous State of Phase-Change Memory DevicesJeyasingh, R. G. D. / Kuzum, D. / Wong, H-S P. et al. | 2011
- 4377
-
Explicit Drain Current, Charge and Capacitance Model of Graphene Field-Effect TransistorsJimenez, D. et al. | 2011
- 4384
-
Epitaxial ALD BeO: Efficient Oxygen Diffusion Barrier for EOT Scaling and Reliability ImprovementJung Hwan Yum, / Bersuker, G. / Akyol, T. / Ferrer, D. A. / Lei, M. / Keun Woo Park, / Hudnall, T. W. / Downer, M. C. / Bielawski, C. W. / Yu, E. T. et al. | 2011
- 4393
-
Self-Annealing Effect of Tensile Liner on Thick-Tinv PMOSQintao Zhang, / Jie Chen, / Sherony, M. J. et al. | 2011
- 4398
-
Polymer Solid-Electrolyte Switch Embedded on CMOS for Nonvolatile Crossbar SwitchTada, M. / Okamoto, K. / Sakamoto, T. / Miyamura, M. / Banno, N. / Hada, H. et al. | 2011
- 4398
-
Molecular and Organic Devices - Polymer Solid-Electrolyte Switch Embedded on CMOS for Nonvolatile Crossbar SwitchTada, M et al. | 2011
- 4407
-
Sensors and Actuators - Ammonia Sensing Characteristics of Sputtered Indium Tin Oxide (ITO) Thin Films on Quartz and Sapphire SubstratesLin, C-W et al. | 2011
- 4407
-
Ammonia Sensing Characteristics of Sputtered Indium Tin Oxide (ITO) Thin Films on Quartz and Sapphire SubstratesCheng-Wei Lin, / Huey-Ing Chen, / Tai-You Chen, / Chien-Chang Huang, / Chi-Shiang Hsu, / Wen-Chau Liu, et al. | 2011
- 4414
-
An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset VariationYan Liu, / Georgiou, P. / Prodromakis, T. / Constandinou, T. G. / Toumazou, C. et al. | 2011
- 4423
-
Sb-rich Si–Sb–Te Phase-Change Material for Phase-Change Random Access Memory ApplicationsLiangcai Wu, / Xilin Zhou, / Zhitang Song, / Min Zhu, / Yan Cheng, / Feng Rao, / Sannian Song, / Bo Liu, / Songlin Feng, et al. | 2011
- 4423
-
BRIEFS - Sb-rich Si-Sb-Te Phase-Change Material for Phase-Change Random Access Memory ApplicationsWu, L et al. | 2011
- 4427
-
Enhanced Temperature Dependence of Phonon-Scattering-Limited Mobility in Compressively Uniaxial Strained pMOSFETsChen, W. P.-N / Kuo, J. J.-Y / Pin Su, et al. | 2011
- 4430
-
Novel Oxide-Passivated AlGaN/GaN HEMT by Using Hydrogen Peroxide TreatmentHan-Yin Liu, / Bo-Yi Chou, / Wei-Chou Hsu, / Ching-Sung Lee, / Chiu-Sheng Ho, et al. | 2011
- 4434
-
Improved Calculation of Charge Collection Probability From Within the Junction WellOng, V. K. S. / Tan, C. C. / Kurniawan, O. / Radhakrishnan, K. et al. | 2011
- 4438
-
In-Depth Study of Quantum Effects in SOI DGMOSFETs for Different Crystallographic OrientationsBalaguer, M. / Aranda, J. B. R. / Gamiz, F. et al. | 2011
- 4442
-
2011 INDEX| 2011
- 4442
-
2011 Index IEEE Transactions on Electron Devices Vol. 58| 2011
- C1
-
Table of contents| 2011
- C2
-
IEEE Transactions on Electron Devices publication information| 2011
- C3
-
IEEE Transactions on Electron Devices information for authors| 2011