Chemical etching properties of highly thermal conductive AlN ceramics for electroless Ni-P metallization (English)
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In:
Journal of the Electrochemical Society
;
135
, 10
;
2578-2581
;
1988
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ISSN:
- Article (Journal) / Print
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Title:Chemical etching properties of highly thermal conductive AlN ceramics for electroless Ni-P metallization
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Additional title:Chemische Aetzeigenschaften von hoch-waermeleitenden AlN-Keramiken fuer nichtelektrische Ni-P-Metallisierungen
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Contributors:
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Published in:Journal of the Electrochemical Society ; 135, 10 ; 2578-2581
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Publisher:
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Publication date:1988
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Size:4 Seiten, 6 Bilder, 1 Tabelle, 8 Quellen
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:CHEMISCHES AETZEN , SUBSTRAT , ALUMINIUMNITRID , METALLISIEREN , PLATTIEREN , CALCIUM , KORNGRENZE , MIKROGEFUEGE , NICKEL , PHOSPHOR , ADHAESIONSKRAFT , AETZEN
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Source:
Table of contents – Volume 135, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2415
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Rechargeable cells with modified MnO2 cathodesDzieciuch, M.A. / Gupta, N. / Wroblowa, H.S. et al. | 1988
- 2432
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Electrochromic display device with inorganic ion exchangerKuwabara, K. / Ichikawa, S. / Sugiyama, K. et al. | 1988
- 2452
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Improved oxide properties by anodization of aluminum films with thin sputtered aluminum oxide overlaysByeon, S.G. / Tzeng, Y. et al. | 1988
- 2502
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Aspects of the interfacial electrochemistry of semiconductor pyrite (FeS2)Mishra, K.K. / Osseo-Asare, K. et al. | 1988
- 2557
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High-rate planar SiO2 deposition using magnetron bias sputteringHomma, Y. / Tunekawa, S. et al. | 1988
- 2578
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Chemical etching properties of highly thermal conductive AlN ceramics for electroless Ni-P metallizationOsaka, T. / Asada, T. / Nakajima, E. / Koiwa, I. et al. | 1988
- 2582
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The effect of processing environment on the lateral growth of titanium silicideVadjikar, R.M. / Roberge, R.P. / Wolfe, T.G. et al. | 1988
- 2586
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Interfacial oxidation of silicon substrates through Ta2O5 filmsKato, T. / Ito, T. et al. | 1988
- 2610
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Conducting transition metal oxides. Possibilities for RuO2 in VLSI metallizationKrusin-Elbaum, L. / Wittmer, M. et al. | 1988
- 2631
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Luminance improvement of blue-green emitting SrS:Ce EL cell by controlling vacuum conditions with sulfur additionOnisawa, K. / Fuyama, M. / Taguchi, K. / Tamura, K. / Ono, Y.A. et al. | 1988
- 2653
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Electrochemical formation of polypyrrole films on YBa2Cu3O(7-x)Osteryoung, J.G. / Magee, L.J. jun. / Carlin, R.T. et al. | 1988