2,55 micron separated absorption multiplication avalanche photodiode based on antimonide compounds (English)
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In:
Materials Science and Engineering, Part B (Solid-State Materials for Advanced Technology)
;
B9
, 1-3
;
365-369
;
1991
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ISSN:
- Article (Journal) / Print
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Title:2,55 micron separated absorption multiplication avalanche photodiode based on antimonide compounds
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Additional title:2,55-Mikrometer-Multiplikations-Lawinenphotodiode mit separater Absorption auf der Basis von Antimon-Verbindungen
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Contributors:Gouskov, L. ( author ) / Luquet, H. ( author ) / Perotin, M. ( author ) / Lahbabi, M. ( author ) / Archidi, H. ( author ) / Karim, M. ( author )
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Published in:
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Publisher:
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Publication date:1991
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Size:5 Seiten, 6 Bilder, 7 Quellen
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:HALBLEITERTECHNOLOGIE , LAWINENPHOTODIODE , ANTIMON , GALLIUM , INDIUM , ARSEN , ENERGIELUECKE , BERECHNUNG , IONISATION , OPTIMIERUNG , BANDPASS , DIAGRAMM
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Source:
Table of contents – Volume B9, Issue 1-3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Applications and markets for semiconductor optoelectronic devicesGoodfellow, R.C. et al. | 1991
- 9
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Improved crystal growth processes for high quality III-V substratesFornari, R. et al. | 1991
- 19
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Growth of InP crystals by the horizontal gradient freeze techniqueSchäfer, N. / Stierlen, J. / Müller, G. et al. | 1991
- 27
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Compensation uniformity of InP:Fe as probed by electron paramagnetic resonanceBoudart, B. / Meyer, B. / Schwab, C. / Coquille, R. / Gauneau, M. et al. | 1991
- 37
-
An investigation of the passivating effects of hydrogen sulphide on the GaAs(100) surfaceHughes, G.J. / Roberts, L. / Henry, M.O. / McGuigan, K. / O'Connor, G.M. / Anderson, F.G. / Morgan, G.P / Glynn, T. et al. | 1991
- 43
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Sulphide passivation of GaAs: study of surface band bendingBerkovits, V.L. / Bessolov, V.N. / Lvova, T.V. / Makarenko, I.V. / Safarov, V.I. / Tsarenkov, B.V. et al. | 1991
- 47
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Electrical characterization of thermally grown native oxide on gallium antimonideBasu, S. / Nandita Baus / Barmann, P. et al. | 1991
- 51
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Electrical studies of the metal-vacuum-cleaved n-GaSb(110) interface: influence of crystal substrate and metal overlayerWalters, S.A. / Williams, R.H. et al. | 1991
- 61
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Can liquid-phase epitaxy still be useful for optoelectronic devices?Thulke, W. et al. | 1991
- 69
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Large-area metal-organic vapour phase epitaxy for optoelectronic integrated circuits and photonicsOugazzaden, A. / Mellet, R. / Mircea, A. / Affonso, A. jun. et al. | 1991
- 77
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Role of molecular beam epitaxy in the optoelectronic fieldMeier, H.P. et al. | 1991
- 93
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Selective area growth for opto-electronic integrated circuits (OEICs)Davies, G.J. / Duncan, W.J. / Skevington, P.J. / French, C.L. / Foord, J.S. et al. | 1991
- 105
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Study of the incorporation of oxygen in Ga(1-x)Al(x)As prepared by MOVPEBakraji, E.H. / Blondiaux, G. / Ducouret, G. / Debrun, J.L. et al. | 1991
- 115
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Stacking fault pyramids, island growth and misfit dislocations in In(x)Ga(1-x)As/InP heterostructures grown by vapour phase epitaxyFrigeri, C. / Attolini, G. / Pelosi, C. / Gleichmann, R. et al. | 1991
- 137
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The fabrication of a novel composite GaAs/SiO2 nucleation layer on silicon for heteroepitaxial overgrowth by molecular beam epitaxyBoeck, J. de / Alay, J. / Vanhellemont, J. / Brijs, B. / Vandervorst, W. / Borghs, G. / Blondeel, M. / Vinckier, C. et al. | 1991
- 143
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Characterization of the GaAs/Si material grown by MOCVD for light emitting diodesBremond, G. / Said, H. / Benyattou, T. / Guillot, G. / Meddeb, J. / Pitaval, M. / Draidia, N. / Azoulay, R. et al. | 1991
- 163
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Improvement of electrical properties of GaAs on silicon by hydrogenation using plasma-enhanced chemical vapour deposition of hydrogenated silicon nitrideZou, G. / Li, M.X. / Potter, M. de / Rossum, M. Van / Boeck, J. De / Borghs, G. et al. | 1991
- 169
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Optoelectronics with II-VI and IV-VI compoundsMarfaing, Y. et al. | 1991
- 185
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Electronic band structure of CdTe/CdZnTe heterostructuresTuffigo, H. / Magnea, N. / Mariette, H. et al. | 1991
- 195
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Preparation of compound semiconductor films by means of hydrogen plasma sputteringTatsuro Miyasato / Masayoshi Tonouchi et al. | 1991
- 207
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Properties of anodic fluoride films on Hg(1-x)Cd(x)TeEsquivias, I. / Brink, D. / Dal Colle, M. / Baars, J. / Bruder, M. et al. | 1991
- 213
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Accumulation layer on p-Hg(1-x)Cd(x)TeHöschl, P. / Moravec, P. / Franc, J. / Grill, R. / Belas, E. et al. | 1991
- 217
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X-ray diffraction evidence for a ferroelectric phase transition in zinc cadmium tellurideNkum, R.K. / Weil, R. / Muranevich, E. / Benguigui, L. / Kimmel, G. et al. | 1991
- 225
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Si-Ge alloys and superlattices for optoelectronicsPearsall, T.P. et al. | 1991
- 233
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Dielectric response of strained Ge-Si superlattices: theory and experimentSchmid, U. / Lukes, F. / Christensen, N.E. / Alouan, M. / Cardona, M. / Kasper, E. / Kibbel, H. / Presting, H. et al. | 1991
- 245
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Photoluminescence and electroreflectance of Ge-Si strained layer superlatticesOkumura, H. / Miki, K. / Misawa, S. / Sakamoto, K. / Sakamoto, T. / Yoshida, S. / Asami, K. / Gonda, S. et al. | 1991
- 259
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Zn3P2 - a new material for optoelectronic devicesMisiewicz, J. / Szatkowski, J. / Mirowska, N. / Gumienny, Z. / Placzek-Popko, E. et al. | 1991
- 263
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Growth of GaAs/Ca(0.45)Sr(0.55)F(2)/GaAs structures by molecular beam epitaxyHorng, S. / Kahn, A. / Wrenn, C. / Pfeffer, R. et al. | 1991
- 269
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Optoelectronic properties of poly(3-hexylthiophene) thin filmsMarchant, S. / Foot, P.J.S. et al. | 1991
- 275
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Making quantum wires and boxes for optoelectronic devicesMerz, J.L. / Petroff, P.M. et al. | 1991
- 289
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Systematic observation of electro-optic effects in semiconductor superlatticesCampi, D. / Cacciatore, C. / Coriasso, C. / Alibert, C. / Regreny, A. et al. | 1991
- 293
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Photoluminescence and optically detected impact ionization studies of GaInAs/InP strained layer superlatticesMeyer, B.K. / Wetzel, C. / Grützmacher, D. / Omling, P. et al. | 1991
- 297
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Optical characterization of indium-rich strained In(1-x)Ga(x)As/InP single- and multiple-quantum-well structuresSchwedler, R. / Wolter, K. / Gallmann, B. / Grützmacher, D. / Stollenwerk, M. / Kurz, H. et al. | 1991
- 301
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Exciton transitions and photovoltaic spectra in GaAs/AlGaAs multiple quantum wellsGhezzi, C. / Parisini, A. / Tarricone, L. / Filipowicz, J. / Genova, F. et al. | 1991
- 307
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Focused ion beam technology for optoelectronicsKanji Gamo et al. | 1991
- 315
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N(+)-p diodes in InP formed by implantation of Ge(+) or Se(+) and rapid thermal annealingKringhoj, P. et al. | 1991
- 319
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Photoluminescence from InP heavily ion-implanted with Mg(+)Yamada, A. / Makita, Y. / Kimura, S. / Asakura, H. / Matsumori, T. / Beye, A.C. / Mayer, K.M. et al. | 1991
- 325
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Characterization of high temperature annealing of InP by scanning photoluminescence and capacitance-voltage measurements of metal/insulator/semiconductor devicesTardy, J. / Perrossier, J.L. / Krawczyk, S.K. / Thomas, I. / Barbier, D. et al. | 1991
- 345
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The state of optoelectronic device research in Eastern EuropeBachert, H. et al. | 1991
- 355
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The metal-organic vapour phase epitaxy growth of GaInAsP and GaAlInAs based graded refractive index separate confinement heterostructure multiple quantum well lasers incorporating linearly graded confinement layersCarr, N. / Wood, A.K. / Thompson, J. / Maung, N. / Ash, R.M. / Mosely, A.J. et al. | 1991
- 361
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Growth and characterization of AlGaAs/GaAs Bragg reflectors for non-linear optoelectronic devicesScheffer, F. / Joseph, M. / Prost, W. / Tegude, F.J. / Lakner, H. / Zumkley, S. / Wingen, G. / Jäger, D. et al. | 1991
- 365
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2,55 micron separated absorption multiplication avalanche photodiode based on antimonide compoundsGouskov, L. / Luquet, H. / Perotin, M. / Lahbabi, M. / Archidi, H. / Karim, M. et al. | 1991
- 371
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Dark currents in InAs(x)Sb(1-(x+y))/InAs photodiodes for 2.5 micron operationTelford, C.M. / Allam, J. / Adams, A.R. / Ali, A.S.M. / Duncan.W.J. / MacBean, M.D.A. et al. | 1991
- 379
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Optical waveguides formed by hydrogen passivation of dopant atoms in p-type GaAs:Si epilayersZavada, J.M. / Weiss, B.L. / Bradley, I.V. / Theys, B. / Chevallier, J. / Rahbi, R. / Addinall, R. / Newman, R.C. / Jenkinson, H.A. et al. | 1991
- 383
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Application of thin film electroluminescent diodes and photoconducting elements in an optoelectronic memory systemPorada, Z. / Schabowska-Osiowksa, E. et al. | 1991