Room-temperature 2.63 micron GaInAsSb/GaSb strained quantum-well laser diodes (English)
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In:
Semiconductor Science and Technology
;
14
, 3
;
283-288
;
1999
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ISSN:
- Article (Journal) / Print
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Title:Room-temperature 2.63 micron GaInAsSb/GaSb strained quantum-well laser diodes
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Additional title:Quantentopflaserdiode mit einer Emissionswellenlänge von 2,63 Mikrometer bei Raumtemperatur
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Contributors:Cuminal, Y. ( author ) / Baranov, A.N. ( author ) / Bec, D. ( author ) / Grech, P. ( author ) / Garcia, M. ( author ) / Boissier, G. ( author ) / Joullie, A. ( author ) / Glastre, G. ( author ) / Blondeau, R. ( author )
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Published in:Semiconductor Science and Technology ; 14, 3 ; 283-288
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Publisher:
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Publication date:1999
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Size:6 Seiten, 8 Bilder, 28 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 14, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 211
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An analysis of the mobility of holes in p-type SiGe quantum wells using multiple scattering theoryM J Kearney / A I Horrell et al. | 1999
- 211
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PAPERS - An analysis of the mobility of holes in p-type SiGe quantum wells using multiple scattering theoryKearney, M.J. et al. | 1999
- 215
-
Spin relaxation and all optical polarization switching at 1.52 micrometres in InGaAs(P)/InGaAsP multiple quantum wellsJ T Hyland / G T Kennedy / A Miller / Chris C Button et al. | 1999
- 215
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PAPERS - Spin relaxation and all optical polarization switching at 1.52 micrometres in InGaAs(P)-InGaAsP multiple quantum wellsHyland, J.T. et al. | 1999
- 222
-
Time-dependent magnetotunnelling of electrons in strongly coupled double quantum wellsC E Ruiz-Díaz / H Cruz / N E Capuj / D Luis et al. | 1999
- 222
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PAPERS - Time-dependent magnetotunnelling of electrons in strongly coupled double quantum wellsRuiz-Diaz, C.E. et al. | 1999
- 227
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PAPERS - Spin-splitting of the subbands of InGaAs-InP and other 'no common atom' quantum wellsVervoort, L. et al. | 1999
- 227
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Spin-splitting of the subbands of InGaAs-InP and other `no common atom' quantum wellsL Vervoort / R Ferreira / P Voisin et al. | 1999
- 231
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PAPERS - Negative magnetoresistance and electron localization in GaAs-AlAs superlatticesGougam, A.B. et al. | 1999
- 231
-
Negative magnetoresistance and electron localization in GaAs-AlAs superlatticesA B Gougam / P Gandit / J Sicart / J L Robert et al. | 1999
- 231
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Negative magnetoressistance and electron localization in GaAs - AlAs superlatticesGougam, A. B. / Gandit, P. / Sicart, J. / Robert, J. L. et al. | 1999
- 239
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Spectroscopic study of Ga-In-P based self-organized lateral superlatticesSandip Ghosh / B M Arora / Seong-Jin Kim / Joo-Hyong Noh / Hajime Asahi et al. | 1999
- 239
-
PAPERS - Spectroscopic study of Ga-In-P based self-organized lateral superlatticesGhosh, S. et al. | 1999
- 246
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On the electrical activity of Fe in LEC indium phosphideRoberto Fornari et al. | 1999
- 246
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PAPERS - On the electrical activity of Fe in LEC indium phosphideFornari, R. et al. | 1999
- 251
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Configuration transformation of metastable defects in 6H-SiCC G Hemmingsson / N T Son / O Kordina / J L Lindström / E Janzén et al. | 1999
- 251
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PAPERS - Configuration transformation of metastable defects in 6H-SiCHemmingsson, C.G. et al. | 1999
- 257
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PAPERS - Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxyKim, E.S. et al. | 1999
- 257
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Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxyEun Soo Kim / Noritaka Usami / Yasuhiro Shiraki et al. | 1999
- 266
-
Electrical study of the Au/InSb/InP systemB Akkal / Z Benamara / L Bideux / B Gruzza et al. | 1999
- 266
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PAPERS - Electrical study of the Au-InSb-InP systemAkkal, B. et al. | 1999
- 271
-
PAPERS - Vacancies and negative ions in as-grown and ion-bombarded p-InP(Zn) observed by positron annihilationChen, Z.Q. et al. | 1999
- 271
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Vacancies and negative ions in as-grown and ion-bombarded p-InP(Zn) observed by positron annihilationZ Q Chen / S J Wang et al. | 1999
- 278
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Fabrication of freestanding GaN by HVPE and optically pumped stimulated emission at room temperatureS T Kim / Y J Lee / D C Moon / C H Hong / T K Yoo et al. | 1999
- 278
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PAPERS - Fabrication of freestanding GaN by HVPE and optically pumped stimulated emission at room temperatureKim, S.T. et al. | 1999
- 283
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Room-temperature GaInAsSb/GaSb strained quantum-well laser diodesY Cuminal / A N Baranov / D Bec / P Grech / M Garcia / G Boissier / A Joullié / G Glastre / R Blondeau et al. | 1999
- 283
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Room-temperature 2.63 m GaInAsSb/GaSb strained quantum-well laser diodesCuminal, Y. / Baranov, A. N. / Bec, D. / Grech, P. / Garcia, M. / Boissier, G. / Joullie, A. / Glastre, G. / Blondeau, R. et al. | 1999
- 283
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Room-temperature 2.63 micron GaInAsSb/GaSb strained quantum-well laser diodesCuminal, Y. / Baranov, A.N. / Bec, D. / Grech, P. / Garcia, M. / Boissier, G. / Joullie, A. / Glastre, G. / Blondeau, R. et al. | 1999
- 283
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PAPERS - Room-temperature 2.63 mm GaInAsSb-GaSb strained quantum-well laser diodesCuminal, Y. et al. | 1999
- 289
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PAPERS - Molecular beam epitaxy growth over shadow edges: A new method for in situ growth of nanostructuresFaschinger, W. et al. | 1999
- 289
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Molecular beam epitaxy growth over shadow edges: a new method for in situ growth of nanostructuresW Faschinger / C Schumacher et al. | 1999
- 293
-
PAPERS - Temperature dependent carrier escape from quantum well states in GaAs-GaAlAs graded index laser structuresHerrmann, K.H. et al. | 1999
- 293
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Temperature dependent carrier escape from quantum well states in GaAs/GaAlAs graded index laser structuresK H Herrmann / J W Tomm / Hessa Al-Otaibi et al. | 1999
- 298
-
Generation-recombination noise in MOSFETsM Jamal Deen / M E Levinshtein / S L Rumyantsev / J Orchard-Webb et al. | 1999
- 298
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PAPERS - Generation-recombination noise in MOSFETsDeen, M.Jamal et al. | 1999
- 305
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ERRATUM - Non-destructive testing of damage layers in GaAs wafers by surface acoustic wavesSchneider, D. et al. | 1999