Resolution limits of optical lithography (English)
- New search for: Okazaki, S.
- New search for: Okazaki, S.
In:
35th International Symposium on Electron, Ion and Photon Beams, 28-31 May 1991, Seattle, WA, USA
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2829-2833
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1991
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ISSN:
- Article (Journal) / Print
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Title:Resolution limits of optical lithography
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Additional title:Auflösungsgrenzen der optischen Lithographie
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Contributors:Okazaki, S. ( author )
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Published in:
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Publisher:
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Publication date:1991
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Size:5 Seiten, 19 Quellen
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 9, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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35th International Symposium on Electron, Ion and Photon Beams, 28-31 May 1991, Seattle, WA, USA| 1991
- 2829
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Resolution limits of optical lithographyOkazaki, S. et al. | 1991
- 2834
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Remarkable effects in wet-etched GaAs/GaAlAs ringsLee, K.Y. / Kern, D.P. / Ismail, K. / Washburn, S. et al. | 1991
- 2838
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Direct nanometer scale patterning of SiO2 with electron-beam irradiationAllee, D.R. / Umbach, C.P. / Broers, A.N. et al. | 1991
- 2842
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Facetless Bragg reflector surface-emitting AlGaAs/GaAs lasers fabricated by electron-beam lithography and chemically assisted ion-beam etchingTiberio, R.C. / Porkolab, G.A. / Rooks, M.J. / Wolf, E.D. / Lang, R.J. / Larsson, A. / Forouhar, S. / Cody, J. / Wicks, G.W. / Erdogan, T. et al. | 1991
- 2851
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Nanofabrication techniques for 100 nm-scale silicon metal oxide semiconductor field effect transistorReeves, C.M. / Hohn, F.J. / Wind, S.J. / Lii, Y.T. / Newman, T.H. / Bucchignano, J.J. / Klaus, D.P. / Chiong, K.N. et al. | 1991
- 2856
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Split-gate electron waveguide fabrication using multilayer poly(methylmethacrylate)Rooks, M.J. / Eugster, C.C. / Alamo, J.A. del / Snider, G.L. / Hu, E.L. et al. | 1991
- 2861
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Fabrication of electroplated T gates with 60 nm gate length for pseudomorphic high electron mobility transistor devicesMarten, A. / Schneider, H. / Schweizer, H. / Nickel, H. / Schlapp, W. / Losch, R. / Dambkes, H. / Marschall, P. et al. | 1991
- 2866
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First step towards application of high-temperature superconductors for planar magnetic lensesAdriaanse, J.P. / Mast, K.D. van der / Zuylen, P. van et al. | 1991
- 2870
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Fabrication of sub-100-nm T gates with SiN passivation layerNummila, K. / Tong, M. / Ketterson, A.A. / Adesida, I. et al. | 1991
- 2875
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High resolution patterning of high Tc superconductorsKern, D.P. / Lee, K.Y. / Laibowitz, R.B. / Gupta, A. et al. | 1991
- 2879
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Fabrication of 0.25 mu m surface acoustic wave devices by ion beam proximity printingStumbo, D.P. / Sen, S. / Damm, G.A. / Fong, F.O. / Engler, D.W. / Fong, K.F. / Wolfe, J.C. / Cho, F. et al. | 1991
- 2882
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High quantum efficiency InGaAs/GaAs quantum wires defined by selective wet etchingGreus, C. / Forchel, A. / Straka, J. / Pieger, K. / Emmerling, M. et al. | 1991
- 2886
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Full-water technology for large-scale laser processing and testingVoegeli, O. / Benedict, M.K. / Bona, G.L. / Buchmann, P. / Cahoon, N. / Datwyler, K. / Dietrich, H.P. / Moser, A. / Sasso, G. / Seitz, H.K. et al. | 1991
- 2893
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Electric field coupling to quantum dot diodesRandall, J.N. / Seabaugh, A.C. / Kao, Y.C. / Luscombe, J.H. / Newell, B.L. et al. | 1991
- 2898
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0.5 mu m GaAs metal semiconductor field effect transistor circuit fabrication using single layer I-line photoresistsPomerene, A.T.S. / Greiner, J.H. / Connolly, J.J. et al. | 1991
- 2904
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Fabrication of 25 nm gold-bridges and observation of ballistic and quantum interference effectsLangheinrich, W. / Beneking, H. / Murek, U. / Braden, C. / Wohlleben, D. et al. | 1991
- 2908
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Helium radio-frequency-plasma GaAs device isolation: application to an in-plane gated quantum wire transistorIngram, S.G. / Simpson, P.J. / Law, V.J. / Ritchie, D.A. / Jones, G.A.C. et al. | 1991
- 2912
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Fabrication of open and buried quantum wires using a removable mask applicable for multiple processing stepsMenschig, A. / Kubler, P.A. / Prins, F.E. / Rudeloff, R. / Hommel, J. / Schweizer, H. et al. | 1991
- 2916
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Low energy off-axis focused ion beam Ga+ implantation into SiSteckl, A.J. / Mogul, H.C. / Novak, S.W. / Magee, C.W. et al. | 1991
- 2920
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Fabrication of sub-50 nm finger spacing and width high-speed metal-semiconductor-metal photodetectors using high-resolution electron beam lithography and molecular beam epitaxyChou, S.Y. / Yue Liu / Fischer, P.B. et al. | 1991
- 2925
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100 kV Schottky electron gunMcGinn, J.B. / Swanson, L.W. / Martin, N.A. / Gesley, M.A. / McCord, M.A. / Viswanathan, R. / Hohn, F.J. / Wilson, A.D. / Naumann, R. / Utlaut, M. et al. | 1991
- 2929
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High brightness limited area cathodesBroers, A. / Xia, S. / Maloney, C. / Xieqing Zhu / Munro, E. et al. | 1991
- 2934
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Aberrations of electron focusing and deflection systems in the presence of three-dimensional perturbation fieldsRouse, J. / Xieqing Zhu / Munro, E. et al. | 1991
- 2940
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Electron optics for high throughput electron beam lithography systemSohda, Y. / Nakayama, Y. / Saitou, N. / Itoh, H. / Todokoro, H. et al. | 1991
- 2944
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A microwave eight-pole transmission line deflector for 100 keV electronsMulder, E.H. / Mast, K.D. van der / Tauritz, J.L. et al. | 1991
- 2949
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MEBES IV thermal-field emission tandem optics for electron beam lithographyGesley, M. et al. | 1991
- 2955
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Experimental evaluation of a scanning tunneling microscope-microlens systemMuray, I.P. / Staufer, U. / Bassous, E. / Kern, D.P. / Chang, T.H.P. et al. | 1991
- 2962
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Investigation of emitter tips for scanning tunneling microscope-based microprobe systemsStaufer, U. / Muray, L.P. / Kern, D.P. / Chang, T.H.P. et al. | 1991
- 2967
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Development of the field emission electron gun integrated in the sputter ion pumpYamazaki, Y. / Miyoshi, M. / Nagai, T. / Okumura, K. et al. | 1991
- 2972
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A method of beam size approximation for field emission systemsSato, M. et al. | 1991
- 2977
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On the design and effective strength of stigmators for electron beam lithographyGesley, M. / DeVore, W. et al. | 1991
- 2981
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Advanced e-beam lithographyTakigawa, T. / Wada, H. / Ogawa, Y. / Yoshikawa, R. / Mori, I. / Abe, T. et al. | 1991
- 2986
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Quantum lithographyMaluf, N.I. / Pease, R.F.W. et al. | 1991
- 2992
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A new approach to high fidelity e-beam and ion-beam lithography based on an in situ global-fiducial gridSmith, H.I. / Hector, S.D. / Schatenburg, M.L. / Anderson, E.H. et al. | 1991
- 2996
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Projection electron-beam lithography: a new approachBerger, S.D. / Gibson, J.M. / Camarda, R.M. / Farrow, R.C. / Huggins, H.A. / Kraus, J.S. / Liddle, J.A. et al. | 1991
- 3000
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Mask fabrication for projection electron-beam lithography incorporating the SCALPEL techniqueLiddle, J.A. / Huggins, H.A. / Berger, S.D. / Gibson, J.M. / Weber, G. / Kola, R. / Jurgensen, C.W. et al. | 1991
- 3010
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Requirements and performance of an electron-beam column designed for x-ray mask inspectionMeisburger, W.D. / Desai, A.A. / Brodie, A.D. et al. | 1991
- 3015
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Performance of the EL-3+ maskmakerHartley, J. / Groves, T. / Pfeiffer, H. et al. | 1991
- 3019
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A servo guided X-Y-theta stage for electron beam lithographyKendall, R. / Doran, S. / Weissmann, E. et al. | 1991
- 3024
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Scanning tunneling microscope lithography: a solution to electron scatteringDobisz, E.A. / Marrian, C.R.K. et al. | 1991
- 3028
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Reliability enhancements for the direct wafer exposure electron beam system EB60Watanabe, T. / Morosawa, T. / Shimazu, N. / Morita, H. / Yamauchi, H. / Iwata, A. et al. | 1991
- 3033
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Preliminary analysis of electron-beam positioning errors in Lepton EBES4Waggener, H.A. / Peters, D.W. / Chen, G. / Rose, C.M. / Fowlis, D.C. / Chitayat, A. / Caracci, J. et al. | 1991
- 3039
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Charging effects on trilevel resist and metal layer in electron-beam lithographyItoh, H. / Nakamura, K. / Hayakawa, H. et al. | 1991
- 3043
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Proximity correction using computer aided proximity correction (CAPROX): evaluation and applicationHintermaier, M. / Hofmann, U. / Hubner, B. / Kalus, C.K. / Knapek, E. / Koops, H.W.P. / Schlager, R. / Seebald, E. / Weber, M. et al. | 1991
- 3054
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Adaptive neural network algorithms for computing proximity effect correctionsFrye, R.C. et al. | 1991
- 3059
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The representative figure method for the proximity effect correction. IIIAbe, T. / Yamasaki, S. / Yoshikawa, R. / Takigawa, T. et al. | 1991
- 3063
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Optimizing electron beam lithography writing strategy subject to electron optical, pattern, and resist constraintsVeneklasen, L.H. et al. | 1991
- 3070
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Theoretical model for scanning electron microscopy through thin film windowsGreen, E.D. / Kino, G.S. et al. | 1991
- 3074
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Nanostructures processing by focused ion beam implantationPetroff, P.M. / Li, Y.J. / Li, T.J. / Xu, Z. / Beinstingl, W. / Sasa, S. / Ensslin, K. et al. | 1991
- 3079
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A low magnification focused ion beam system with 8 nm spot sizeKubena, R.L. / Ward, J.W. / Stratton, F.P. / Joyce, R.J. / Atkinson, G.M. et al. | 1991
- 3084
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Filamentless neutralization of broad ion beamsKorzec, D. / Kessler, T. / Keller, H.M. / Engemann, J. et al. | 1991
- 3090
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An ion counting apparatus for studying the statistics of ion emission from liquid metal ion sourcesWard, J.W. / Kubena, R.L. / Joyce, R.J. et al. | 1991
- 3095
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Control of diamond film microstructure by use of seeded focused ion beam crater arraysKirkpatrick, A.R. / Ward, B.W. et al. | 1991
- 3099
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In situ patterning of GaAs by focused ion beamKosugi, T. / Yamashiro, T. / Aihara, R. / Gamo, K. / Namba, S. et al. | 1991