Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates (English)
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In:
Materials Science Forum
;
645-648
;
633-636
;
2010
- Article (Journal) / Electronic Resource
-
Title:Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
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Contributors:
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Published in:Materials Science Forum ; 645-648 ; 633-636
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Publisher:
- New search for: Trans Tech Publications
-
Place of publication:Stafa-Zurich, Switzerland
-
Publication date:2010-04-29
-
Size:4 pages
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ISSN:
-
DOI:
-
Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 645-648
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- -2
-
Preface| 2010
- 3
-
High Quality 100mm 4H-SiC Substrates with Low Resistivity| 2010
- -4
-
Committees| 2010
- -5
-
Sponsors| 2010
- 9
-
Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality| 2010
- 13
-
High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt| 2010
- 17
-
Growth of 4H-SiC Crystals on the 8° Off-Axis 6H-SiC Seed by PVT Method| 2010
- 17
-
Growth of 4H-SiC Crystals on the 8^o Off-Axis 6H-SiC Seed by PVT MethodTymicki, E. / Grasza, K. / Racka-Dzietko, K. / Raczkiewicz, M. / Lukasiewicz, T. / Gala, M. / Kosciewicz, K. / Diduszko, R. / Bozek, R. et al. | 2010
- 21
-
Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside| 2010
- 25
-
Status of 3" 6H SiC Bulk Crystal Growth| 2010
- 29
-
Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray Diffraction| 2010
- 33
-
Solution Growth and Crystallinity Characterization of Bulk 6H-SiC| 2010
- 37
-
Non-Polar SiC Crystal Growth with m-Plane(1-100) and a-Plane(11-20) by PVT Method| 2010
- 41
-
Purifying Mechanism in the Acheson Process - A Thermodynamic Study| 2010
- 45
-
Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process| 2010
- 49
-
Overview of 3C-SiC Crystalline Growth| 2010
- 55
-
Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique| 2010
- 59
-
Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts| 2010
- 63
-
Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals| 2010
- 67
-
Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?| 2010
- 71
-
The Effect of Phenol Resin Types and Mixing Ratios on the Synthesis of High-Purity β-SiC Powder by the Sol-Gel Method| 2010
- 71
-
The Effect of Phenol Resin Types and Mixing Ratios on the Synthesis of High-Purity beta -SiC Powder by the Sol-Gel MethodByeun, Y.K. / Telle, R. / Han, K.S. / Park, S.W. et al. | 2010
- 77
-
Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers| 2010
- 83
-
Growth and Properties of SiC On-Axis Homoepitaxial Layers| 2010
- 89
-
High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor| 2010
- 95
-
Concentrated Chloride-Based Epitaxial Growth of 4H-SiC| 2010
- 99
-
4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate| 2010
- 103
-
Epitaxial Growth of 4H-SiC with High Growth Rate Using CH3Cl and SiCl4 Chlorinated Growth Precursors| 2010
- 107
-
Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers| 2010
- 111
-
Use of SiCl4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC| 2010
- 115
-
Short-Length Step Morphology on 4° Off Si-Face Epitaxial Surface Grown on 4H-SiC Substrate| 2010
- 115
-
Short-Length Step Morphology on 4^o Off Si-Face Epitaxial Surface Grown on 4H-SiC SubstrateMomose, K. / Odawara, M. / Tajima, Y. / Koizumi, H. / Muto, D. / Sato, T. et al. | 2010
- 119
-
Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates| 2010
- 119
-
Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4^o Off-Axis SubstratesAigo, T. / Tsuge, H. / Yashiro, H. / Fujimoto, T. / Katsuno, M. / Nakabayashi, M. / Hoshino, T. / Ohashi, W. et al. | 2010
- 123
-
Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth| 2010
- 127
-
Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature| 2010
- 131
-
The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode| 2010
- 135
-
3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)| 2010
- 139
-
SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide| 2010
- 143
-
Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates| 2010
- 147
-
Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane| 2010
- 151
-
Fundamental Study of the Temperature Ramp-Up Influence for 3C-SiC Hetero-Epitaxy on Silicon (100)| 2010
- 155
-
Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates| 2010
- 159
-
Tuning Residual Stress in 3C-SiC(100) on Si(100)| 2010
- 163
-
Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase| 2010
- 167
-
Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films| 2010
- 171
-
Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates| 2010
- 175
-
Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds| 2010
- 179
-
Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy| 2010
- 183
-
Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates| 2010
- 187
-
SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition| 2010
- 193
-
Identification of Defects Limiting the Carrier Lifetime in n- Epitaxial Layers of 4H-SiC| 2010
- 199
-
Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers| 2010
- 203
-
Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers| 2010
- 207
-
Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method| 2010
- 211
-
CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers| 2010
- 215
-
Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals| 2010
- 219
-
On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC Heterostructures| 2010
- 223
-
Increase of SiC Substrate Resistance Induced by Annealing| 2010
- 227
-
Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC| 2010
- 231
-
Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions| 2010
- 235
-
Electronic Structure and Momentum-Dependent Resonant Inelastic X-Ray Scattering in Broad Band Materials| 2010
- 239
-
Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide| 2010
- 243
-
Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures| 2010
- 247
-
Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration| 2010
- 251
-
Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction| 2010
- 255
-
Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios| 2010
- 259
-
Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures| 2010
- 263
-
Determination of the Optical Bandgap of Thin Amorphous (SiC)1-x(AlN)x Films| 2010
- 267
-
Elastic Properties of Dense Organosilicate Glasses Dependent on the C/Si Ratio| 2010
- 271
-
A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy| 2010
- 277
-
On the Luminescence and Driving Force of Stacking Faults in 4H-SiC| 2010
- 283
-
Systematic First Principles Calculations of the Effects of Stacking Fault Defects on the 4H-SiC Band Structure| 2010
- 287
-
In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate| 2010
- 291
-
Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density| 2010
- 295
-
Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy| 2010
- 299
-
Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC| 2010
- 303
-
Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers| 2010
- 307
-
Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers| 2010
- 311
-
Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates| 2010
- 315
-
Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy| 2010
- 315
-
Structure of Inclusions in 4^o Offcut 4H-SiC EpitaxyMahadik, N.A. / Stahlbush, R.E. / Qadri, S.B. / Glembocki, O.J. / Alexson, D.A. / Myers-Ward, R.L. / Tedesco, J.L. / Eddy, C.R. / Gaskill, D.K. et al. | 2010
- 319
-
Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers| 2010
- 323
-
Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process| 2010
- 327
-
Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers| 2010
- 331
-
Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes| 2010
- 335
-
Dislocation Activity in 4H-SiC in the Brittle Domain| 2010
- 339
-
Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC| 2010
- 343
-
Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects| 2010
- 347
-
6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers| 2010
- 351
-
Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer| 2010
- 355
-
Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC| 2010
- 359
-
Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates| 2010
- 363
-
Stacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth| 2010
- 367
-
The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy| 2010
- 371
-
A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films| 2010
- 375
-
Macrodefects in Cubic Silicon Carbide Crystals| 2010
- 379
-
Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy| 2010
- 383
-
TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds| 2010
- 387
-
TEM and SEM-CL Studies of SiC Nanowires| 2010
- 391
-
Characteristics of Porous 3C-SiC Thin Films Formed with Nitrogen Doping Concentrations| 2010
- 395
-
Theory of Neutral Divacancy in SiC: A Defect for Spintronics| 2010
- 399
-
The Carbon Vacancy Related EI4 Defect in 4H-SiC| 2010
- 403
-
Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC| 2010
- 407
-
The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation| 2010
- 411
-
New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiC| 2010
- 415
-
LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates| 2010
- 419
-
Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons| 2010
- 423
-
Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons| 2010
- 427
-
Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers| 2010
- 431
-
A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation| 2010
- 435
-
Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC| 2010
- 439
-
Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons| 2010
- 443
-
Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques| 2010
- 447
-
Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin Scattering| 2010
- 451
-
Breakdown of Impurity Al in SiC Polytypes| 2010
- 455
-
Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC| 2010
- 459
-
Thermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin Films| 2010
- 463
-
Detection and Electrical Characterization of Defects at the SiO2/4H-SiC Interface| 2010
- 469
-
Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation| 2010
- 473
-
SiC and GaN MOS Interfaces – Similarities and Differences| 2010
- 479
-
Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO2 Interface| 2010
- 483
-
Dynamical Simulations of Dry Oxidation and NO Annealing of SiO2/4H-SiC Interface on C-Face at 1500K: From First Principles| 2010
- 487
-
Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs| 2010
- 491
-
Nitridation of the SiO2/SiC Interface by N+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs| 2010
- 495
-
Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates| 2010
- 499
-
Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States| 2010
- 503
-
Significant Decrease of the Interface State Density by NH3 Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration| 2010
- 507
-
Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces| 2010
- 511
-
Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide| 2010
- 515
-
Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide| 2010
- 519
-
Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC| 2010
- 523
-
A C-V Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS Structures| 2010
- 527
-
EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors| 2010
- 531
-
Electrical Properties and Gas Sensing Characteristics of the Al2O3/4H SiC Interface Studied by Impedance Spectroscopy| 2010
- 535
-
Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)| 2010
- 539
-
Study of the Evolution of Basal Plane Dislocations during Epitaxial Growth: Role of the Surface Kinetics| 2010
- 543
-
Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces| 2010
- 547
-
Modal Composition of the SiC Surface Electromagnetic Response to the External Radiation at Lattice Resonant Frequency| 2010
- 551
-
Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy| 2010
- 555
-
Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping| 2010
- 559
-
Characterization of Defects in Semi-Insulating 6H-SiC Substrates Using IR Thermal Imaging Camera| 2010
- 565
-
Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates| 2010
- 569
-
Growth Rate and Thickness Uniformity of Epitaxial Graphene| 2010
- 573
-
Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure| 2010
- 577
-
Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies| 2010
- 581
-
Differences between Graphene Grown on Si-Face and C-Face| 2010
- 585
-
Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers| 2010
- 589
-
Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon| 2010
- 593
-
Growth and Characterization of Epitaxial Graphene on SiC Induced by Carbon Evaporation| 2010
- 597
-
Epitaxial Graphene Growth Studied by Low-Energy Electron Microscopy and First-Principles| 2010
- 603
-
Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy| 2010
- 607
-
Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping| 2010
- 611
-
Deep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC Substrates| 2010
- 615
-
Optical Transmission of Epitaxial Graphene Layers on SiC in the Visible Spectral Range| 2010
- 619
-
Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000-1) and 4H-SiC:H Surface| 2010
- 623
-
Hydrogen Intercalation below Epitaxial Graphene on SiC(0001)| 2010
- 629
-
Quasi-Freestanding Graphene on SiC(0001)| 2010
- 633
-
Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates| 2010
- 637
-
Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001)| 2010
- 645
-
Defect Control in Growth and Processing of 4H-SiC for Power Device Applications| 2010
- 651
-
Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC| 2010
- 655
-
Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs| 2010
- 661
-
Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs| 2010
- 665
-
Novel Fabrication Technology for Devices with nearly Temperature-Independent Forward Characteristics| 2010
- 669
-
Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC| 2010
- 673
-
Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations| 2010
- 677
-
On the Viability of Au/3C-SiC Schottky Barrier Diodes| 2010
- 681
-
Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides| 2010
- 685
-
Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing| 2010
- 689
-
Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures| 2010
- 693
-
The Limits of Post Oxidation Annealing in NO| 2010
- 697
-
Electrical Activation of B+-Ions Implanted into 4H-SiC| 2010
- 701
-
Manganese in 4H-SiC| 2010
- 705
-
Effects of Implantation Temperature on Sheet and Contact Resistance of Heavily Al Implanted 4H-SiC| 2010
- 709
-
Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors| 2010
- 713
-
Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC| 2010
- 717
-
Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples| 2010
- 721
-
Effects of Helium Implantation on the Mechanical Properties of 4H-SiC| 2010
- 725
-
Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing| 2010
- 729
-
TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC| 2010
- 733
-
Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films| 2010
- 737
-
Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers| 2010
- 741
-
SiC-Die-Attachment for High Temperature Applications| 2010
- 745
-
Characteristics of Gold Wire Bonds with Ti- and Ni-Based Contact Metallization to n-SiC for High Temperature Applications| 2010
- 749
-
Development of a Wire-Bond Technology for SiC High Temperature Applications| 2010
- 753
-
Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials| 2010
- 759
-
Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC| 2010
- 763
-
Morphology Improvement of Step Bunching on 4H-SiC Wafers by Polishing Technique| 2010
- 767
-
Fabrication and Use of Atomically Smooth Steps on 6H-SiC for Calibration of z-Displacements in Scanning Probe Microscopy| 2010
- 771
-
Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl2-O2-SiC System| 2010
- 775
-
Reduction of Surface Roughness of 4H-SiC by Catalyst-Referred Etching| 2010
- 779
-
Self-Formation of Specific Pyramidal Planes in 4H-SiC Formed by Chlorine Based Ambience| 2010
- 783
-
Impact of CF4 Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing| 2010
- 787
-
4H-SiC Surface Morphology Etched Using ClF3 Gas| 2010
- 791
-
Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs| 2010
- 795
-
Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride| 2010
- 799
-
Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC| 2010
- 805
-
Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices| 2010
- 809
-
Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model| 2010
- 813
-
In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures| 2010
- 817
-
Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps| 2010
- 821
-
Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy| 2010
- 825
-
Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices| 2010
- 829
-
Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC| 2010
- 833
-
Reliability of Thin Thermally Grown SiO2 on 3C-SiC Studied by Scanning Probe Microscopy| 2010
- 837
-
Effects of Post-Deposition Annealing on CeO2 Gate Prepared by Metal-Organic Decomposition (MOD) Method on 4H-SiC| 2010
- 841
-
Nanostructuring Techniques for 3C-SiC(100) NEMS Structures| 2010
- 845
-
SiC on SOI Resonators: A Route for Electrically Driven MEMS in Harsh Environment| 2010
- 849
-
Temperature Facilitated ECR-Etching for Isotropic SiC Structuring| 2010
- 853
-
Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiC| 2010
- 857
-
Thinning of SiC Wafer by Plasma Chemical Vaporization Machining| 2010
- 861
-
Property Modification of 3C-SiC MEMS on Ge-Modified Si(100) Substrates| 2010
- 865
-
Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers| 2010
- 869
-
Electric Discharge Machining for Silicon Carbide in Gases of Ar, Ar-CH4 and Ar-CF4 Mixtures| 2010
- 873
-
Effect of In Situ Doped Nitrogen Concentrations on the Characteristics of Poly 3C-SiC Micro Resonators| 2010
- 879
-
Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers| 2010
- 885
-
A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive Losses| 2010
- 889
-
Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature| 2010
- 893
-
Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height| 2010
- 897
-
4.6 kV, 10.5 mOhmxcm^2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial WafersVassilevski, K. / Nikitina, I.P. / Horsfall, A.B. / Wright, N.G. / Johnson, C.M. et al. | 2010
- 897
-
4.6 kV, 10.5 mOhm×cm2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers| 2010
- 901
-
6.5 kV SiC PiN Diodes with Improved Forward Characteristics| 2010
- 905
-
Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes| 2010
- 909
-
Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance| 2010
- 913
-
Analyses of High Leakage Currents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations| 2010
- 917
-
Preliminary Investigation of Laser Induced Photoconductivity in 4H-SiC PiN Diodes and HPSI Substrate| 2010
- 921
-
Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation| 2010
- 925
-
4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method| 2010
- 929
-
Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations| 2010
- 933
-
Fast Switching with SiC VJFETs - Influence of the Device Topology| 2010
- 937
-
Performance of 15 mm2 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current| 2010
- 941
-
Radiation Hardness Evaluation of SiC-BGSIT| 2010
- 945
-
Physics of Hysteresis in MESFET Drain I-V Characteristics: Simulation Approach| 2010
- 949
-
Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design| 2010
- 949
-
Characterization of SiC JFETs and its Application in Extreme Temperature (over 450^oC) Circuit DesignYang, J. / Fraley, J. / Western, B. / Schupbach, M. / Lostetter, A. et al. | 2010
- 953
-
Amplitude Shift Keyed Radio Communications for Hostile Environments| 2010
- 957
-
Minimization of Drain-to-Gate Interaction in a SiC JFET Inverter Using an External Gate-Source Capacitor| 2010
- 961
-
Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250°C| 2010
- 961
-
Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250^oCLim, J.K. / Bakowski, M. / Nee, H.P. et al. | 2010
- 965
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Circuit Modeling of Vertical Buried-Grid SiC JFETs| 2010
- 969
-
Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs| 2010
- 975
-
Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs| 2010
- 979
-
Wafer-Level Hall Measurement on SiC MOSFET| 2010
- 983
-
Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics| 2010
- 987
-
1360 V, 5.0 mΩcm2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)| 2010
- 987
-
1360 V, 5.0 m Omega cm^2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)Kono, H. / Suzuki, T. / Mizukami, M. / Ota, C. / Harada, S. / Senzaki, J. / Fukuda, K. / Shinohe, T. et al. | 2010
- 991
-
Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO2 Stacked Gate Dielectrics| 2010
- 995
-
Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices| 2010
- 999
-
Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle| 2010
- 1005
-
Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs| 2010
- 1009
-
Electrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating Layer| 2010
- 1013
-
Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation| 2010
- 1017
-
9 kV, 1 cm2 SiC Gate Turn-Off Thyristors| 2010
- 1021
-
Large Area >8 kV SiC GTO Thyristors with Innovative Anode-Gate Designs| 2010
- 1025
-
10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC| 2010
- 1029
-
SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter| 2010
- 1033
-
2.2 kV SiC BJTs with Low VCESAT Fast Switching and Short-Circuit Capability| 2010
- 1037
-
Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and Electroluminescence| 2010
- 1041
-
Optical Insights into the Internal Electronic and Thermal Behavior of 4H-SiC Bipolar Devices| 2010
- 1045
-
A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed| 2010