Boron Diffusion in Pre-Amorphised Silicon: Interactions with the End of Range Defects (English)
National licence
- New search for: Mathiot, D.
- New search for: Claverie, A.
- New search for: Martinez, A.
In:
Defect and Diffusion Forum
;
153-155
;
11-24
;
1997
- Article (Journal) / Electronic Resource
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Title:Boron Diffusion in Pre-Amorphised Silicon: Interactions with the End of Range Defects
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Contributors:
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Published in:Defect and Diffusion Forum ; 153-155 ; 11-24
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Publisher:
- New search for: Trans Tech Publications
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Place of publication:Stafa-Zurich, Switzerland
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Publication date:1997-11-24
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Size:14 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:Diffusion , Amorphisation , Boron , Doping , Ostwald Ripening , Anneal , Self-Interstitial , Silicon , Ion Implantation , Defect
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Source:
Table of contents – Volume 153-155
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Pressure and Stress Effects on Diffusion in Si| 1997
- 11
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Boron Diffusion in Pre-Amorphised Silicon: Interactions with the End of Range Defects| 1997
- 25
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Stress in Silicon Nitride Films and Its Effect on Boron Diffusion in Silicon| 1997
- 45
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Quantum Effects on Hydrogen Diffusion in Silicon| 1997
- 69
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Self-Diffusion in Silicon| 1997
- 81
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Diffusion of Si Adsorbates on an Si(001) Surface| 1997
- 97
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Vacancies and Vacancy Defects in Si Observed by Positron Annihilation| 1997
- 111
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Vacancy Distributions in Silicon and Methods for Their Accurate Determination| 1997
- 137
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Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance| 1997
- 159
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Review of Growth Striations in CZ and MCZ Silicon Wafers| 1997
- 183
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Theory of Reaction-Diffusion Processes at Very High Dopant Concentrations| 1997
- 193
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Diffusion and Reaction Kinetics of Fast-Ion-Induced Point Defects Studied by Deep Level Transient Spectroscopy| 1997
- 205
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Analytical Expressions for the Length of Stacking Faults during Thermal Nitridation of Oxidized Silicon and Silicon| 1997