Influence of High-Temperature Bias Stress on Room-Temperature VT Drift Measurements in SiC Power MOSFETs (English)
National licence
- New search for: Habersat, Daniel B.
- New search for: Lelis, Aivars
- New search for: Green, Ronald
In:
Materials Science Forum
;
963
;
757-762
;
2019
- Article (Journal) / Electronic Resource
-
Title:Influence of High-Temperature Bias Stress on Room-Temperature VT Drift Measurements in SiC Power MOSFETs
-
Contributors:
-
Published in:Materials Science Forum ; 963 ; 757-762
-
Publisher:
- New search for: Trans Tech Publications Ltd
-
Place of publication:Stafa-Zurich, Switzerland
-
Publication date:2019-07-19
-
Size:6 pages
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Electronic Resource
-
Language:English
-
Keywords:
-
Source:
Table of contents – Volume 963
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 5
-
Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography| 2019
- -7
-
Preface| 2019
- 10
-
Cold Split Kerf-Free Wafering Results for Doped 4H-SiC Boules| 2019
- 14
-
Tracking of the Growth Interface during PVT-Growth of SiC Boules Using a X-Ray Computed Tomography Setup| 2019
- 18
-
Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth| 2019
- 22
-
Impacts of TaC Coating on SiC PVT Process Control and Crystal Quality| 2019
- 26
-
Major Carrier Element Concentrations in SiC Powder and Bulk Crystal| 2019
- 30
-
Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method| 2019
- 34
-
Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible| 2019
- 38
-
Polytype Control by Pretreatment of SiC Source Powder for 4H-SiC Single Crystal Growth| 2019
- 42
-
Optimization of the SiC Powder Source Size Distribution for the Sublimation Growth of Long Crystals Boules| 2019
- 46
-
New Materials for Semi-Insulating SiC Single Crystal Growth by PVT Method| 2019
- 51
-
A Comparative Study of the Crystal Growth Techniques of Silicon Carbide, Technology Adaption and the Road to Low Cost Silicon Carbide Materials| 2019
- 56
-
Research on the Key Problems in the Industrialization of SiC Substrate Materials| 2019
- 60
-
Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers| 2019
- 64
-
Study on Dislocation Behaviors during PVT Growth of 4H-SiC| 2019
- 71
-
Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth| 2019
- 75
-
Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth| 2019
- 80
-
Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiС Wafer Fabricated by the Solution Growth Method| 2019
- 85
-
Solution Growth of 4-Inch Diameter SiC Single Crystal Using Si-Cr Based Solvent| 2019
- 91
-
High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process| 2019
- 97
-
Continuous Growth of Buffer/Drift Epitaxial Stack Based on 4H-SiC by Quick Change of N2 Flow Rate under High Growth Rate Condition| 2019
- 101
-
Repeatability of Epitaxial Growth of n-Type 4H-SiC Films by High Speed Wafer Rotation Vertical CVD Tool| 2019
- 105
-
Extensive 99% Killer Defect Free 4H-SiC Epitaxial Layer toward High Current Large Chip Devices| 2019
- 109
-
Influence of Substrate Properties on the Defectivity and Minority Carrier Lifetime in 4H-SiC Homoepitaxial Layers| 2019
- 114
-
Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer| 2019
- 119
-
Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy| 2019
- 123
-
New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor| 2019
- 127
-
Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates| 2019
- 131
-
A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches| 2019
- 136
-
Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling| 2019
- 141
-
High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film| 2019
- 149
-
Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates| 2019
- 153
-
Novel Carbon Treatment to Create an Oriented 3C-SiC Seed on Silicon| 2019
- 157
-
Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base| 2019
- 161
-
Structural Strain in Single Layer Graphene Fabricated on SiC| 2019
- 171
-
Evaluation of the Impact of Al Atoms on SiO2/ SiC Interface Property by Using 4H-SiC n+-Channel Junctionless MOSFET| 2019
- 175
-
Cryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETs| 2019
- 180
-
Surface Morphology of 4H-SiC after Thermal Oxidation| 2019
- 184
-
Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs| 2019
- 189
-
Accurate Dopant and Interface Characterization in Oxidized SiC with Refined Non-Contact C-V Technique| 2019
- 194
-
First Principles Study of the Influence of the Local Steric Environment on the Incorporation and Migration of NO in a-SiO2| 2019
- 199
-
Evidence for an Abrupt Transition between SiO2 and SiC from EELS and Ab Initio Modelling| 2019
- 204
-
Theory of Carbon-Vacancy Diffusion at the SiO2/4H-SiC Interface| 2019
- 208
-
DFT Calculation for Oxidation Reaction of SiC(0001)| 2019
- 213
-
Characterization of SiO2/SiC Near-Interface Oxide Traps with Constant-Capacitance Deep-Level Transient Spectroscopy| 2019
- 217
-
Characterization of Near-Interface Traps at Dielectric/SiC Interfaces Using CCDLTS| 2019
- 222
-
Atomic Coordination Analysis of Nitrogen Introduced in SiO2/ SiC Interface and SiO2 Layer by XAFS Measurement| 2019
- 226
-
Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed SiO2/4H-SiC(0001) Structures| 2019
- 230
-
SiO2/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements| 2019
- 236
-
A Temperature Independent Effect of Near-Interface Traps in 4H-SiC MOS Capacitors| 2019
- 240
-
Identification of Near-Interface Trap Distribution by Parameter Estimation| 2019
- 244
-
Impact of Pit Defects on the Initial Electrical Characteristics of Planar-MOSFET Devices| 2019
- 251
-
Observation of Dislocation Conversion in 4H-SiC Epitaxial Wafer by Mirror Projection Electron Microscopy| 2019
- 255
-
Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope| 2019
- 259
-
Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method| 2019
- 263
-
Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy| 2019
- 268
-
Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment| 2019
- 272
-
Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers| 2019
- 276
-
Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping| 2019
- 280
-
Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes| 2019
- 284
-
Effect of Defects in Silicon Carbide Epitaxial Layers on Yield and Reliability| 2019
- 288
-
Evaluation of Effect of Mechanical Stress on Stacking Fault Expansion in 4H-SiC P-i-N Diode| 2019
- 297
-
Deep Electronic Levels in n-Type and p-Type 3C-SiC| 2019
- 301
-
Combined EPR and Photoluminescence Study of Electron and Proton Irradiated 3C-SiC| 2019
- 305
-
Effects of Aluminum Incorporation on the Young’s Modulus of 3C-SiC Epilayers| 2019
- 309
-
Electrically Active Levels Generated by Long Oxidation Times in 4H-SiC| 2019
- 313
-
Minority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity| 2019
- 318
-
Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al)| 2019
- 324
-
Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers| 2019
- 328
-
4H-SiC p-Type Doping Determination from Secondary Electrons Imaging| 2019
- 332
-
Ultra-Fast and High-Precision Crystal Orientation Measurements on 4H-SiС| 2019
- 336
-
Study of Nitrogen Doping Effect on Lattice Strain Variation in 4H-SiC Substrates by Synchrotron X-Ray Contour Mapping Method| 2019
- 341
-
Newly Resolved Phonon-Assisted Transitions and Fine Structure in the Low Temperature Wavelength Modulated Absorption and Photoluminescence Spectra of 6H SiC| 2019
- 346
-
High Resolution Investigation of Stacking Fault Density by HRXRD and STEM| 2019
- 353
-
Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates| 2019
- 357
-
Nano and Micro-Scale Simulations of Si/4H-SiC and Si/3C-SiC NN-Heterojunction Diodes| 2019
- 362
-
Characterization of β-Silicon Carbide and Potential Use as Irradiation Temperature Monitor| 2019
- 367
-
Terahertz Emission from SiC Natural Superlattices in Strong Electrical Field| 2019
- 375
-
Recent Advances in the Doping of 4H-SiC by Channeled Ion Implantation| 2019
- 382
-
Channeled Implantations of p-Type Dopants into 4H-SiC at Different Temperatures| 2019
- 386
-
Channeling in 4H-SiC from an Application Point of View| 2019
- 390
-
Fabrication and Characterization of 3.3-kV SiC DMOSFET with Self-Aligned Channels Formed by Tilted Ion Implantation| 2019
- 394
-
Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region| 2019
- 399
-
Thermal Annealing of High Dose P Implantation in 4H-SiC| 2019
- 403
-
High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication| 2019
- 407
-
Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers| 2019
- 412
-
Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser| 2019
- 416
-
Activation Energy for the Post Implantation Annealing of 1019 cm-3 and 1020 cm-3 Ion Implanted Al in 4H SiC| 2019
- 420
-
1300°C Annealing of 1×1020 Al+ Ion Implanted 3C-SiC| 2019
- 424
-
Raman Spectroscopy Characterization of Ion Implanted 4H-SiC| 2019
- 429
-
Surface Characterization of Ion Implanted 4H-SiC Epitaxial Layers with Ion Energy and Concentration Variations| 2019
- 433
-
On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements| 2019
- 437
-
Lateral Straggling of Ion Implantation Distributions in 4H-SiC Investigated by SIMS| 2019
- 441
-
Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation| 2019
- 445
-
Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements| 2019
- 451
-
Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC| 2019
- 456
-
Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET| 2019
- 460
-
Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC| 2019
- 465
-
Improved SiO2/ 4H-SiC Interface Defect Density Using Forming Gas Annealing| 2019
- 469
-
Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiNx Interface Layer| 2019
- 473
-
Evidence of Channel Mobility Anisotropy on 4H-SiC MOSFETs with Low Interface Trap Density| 2019
- 479
-
Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon| 2019
- 485
-
Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon| 2019
- 490
-
Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET| 2019
- 494
-
Microstructural Analysis of Ti/Ni Bilayer Ohmic Contacts on 4H-SiC Layers| 2019
- 498
-
Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC| 2019
- 502
-
Laser Annealing Simulations of Metallisations Deposited on 4H-SiC| 2019
- 506
-
Argon Bombardment of 4H Silicon Carbide Substrates for Tailored Schottky Diode Barrier Heights| 2019
- 511
-
Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis| 2019
- 516
-
Deep Level Transient Spectroscopy (DLTS) Study of 4H-SiC Schottky Diodes and PiN Diodes| 2019
- 520
-
Chlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer Etcher| 2019
- 525
-
High-Efficiency Planarization of SiC Wafers by Water-CARE (Catalyst-Referred Etching) Employing Photoelectrochemical Oxidation| 2019
- 530
-
Impact of Subsurface Damage on SiC Wafer Shape| 2019
- 539
-
Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars| 2019
- 544
-
Surge Current and Avalanche Robustness of Commercial 1200 V SiC Schottky Diodes| 2019
- 549
-
Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes| 2019
- 553
-
The Impact of Non-Ideal Ohmic Contacts on the Performance of High-Voltage SiC MPS Diodes| 2019
- 558
-
On the Development of 1700V SiC JBS Diodes in a 6-Inch Foundry| 2019
- 562
-
Mechanisms and Characteristics of Large-Area High-Current-Density 4H-SiC Trench Junction Barrier Schottky Diodes| 2019
- 567
-
Advanced Electrical Characterisation of High Voltage 4H-SiC PiN Diodes| 2019
- 572
-
Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures| 2019
- 576
-
Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode| 2019
- 583
-
Comparison of SiC MOSFET Characteristics Following Body-Diode Forward-Current Stress| 2019
- 588
-
Achieving Reduced Specific On-Resistance in 1.2 kV SiC Power MOSFETs at Elevated Temperature| 2019
- 592
-
Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling| 2019
- 596
-
Temperature Dependence of dV/dt Impact on the SiC-MOSFET| 2019
- 600
-
1.2 kV SiC Trench-Gate MOSFETs with Dual Shielding Regions| 2019
- 605
-
Design Optimization of 1.2kV 4H-SiC Trench MOSFET| 2019
- 609
-
Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization| 2019
- 613
-
Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs| 2019
- 617
-
1.2-kV SiC Trench-Etched Double-Diffused MOS (TED-MOS)| 2019
- 621
-
An Investigation into the Dynamic Behavior of 3.3kV MOSFETs Body Diode| 2019
- 625
-
Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET| 2019
- 629
-
Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits| 2019
- 633
-
Impact of Interface Trap Density of SiC-MOSFET in High-Temperature Environment| 2019
- 639
-
Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well| 2019
- 643
-
Deep Trench Termination Structure with p-Type SiC Layer for Improved Reliability of High Voltage IGBT| 2019
- 647
-
Improved Device Characteristics Obtained Using a Novel High-K Dielectric Stack for 4H-SiC n-IGBT: HfO2-SiO2- AlN| 2019
- 651
-
15 kV n-GTOs in 4H-SiC| 2019
- 655
-
SiC Charge-Balanced Devices Offering Breakthrough Performance Surpassing the 1-D Ron versus BV Limit| 2019
- 660
-
Improvement of Switching Characteristics in 6.5-kV SiC IGBT with Novel Drift Layer Structure| 2019
- 666
-
Simulation Study for the Structural Cell Design Optimization of 15kV SiC p-Channel IGBTs| 2019
- 670
-
TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors| 2019
- 674
-
Silicon Carbide BJT Oscillator Design Using S-Parameters| 2019
- 679
-
Effect of Temperature on the Electrical Characteristics of 4H-SiC Planar n/p-Type Junctionless FET: Physics Based Simulation| 2019
- 683
-
Compact Modeling of SiC and GaN Junction FETs at High Temperature| 2019
- 688
-
High-Voltage SiC-JFET Fabrication and Full Characterization| 2019
- 693
-
Performance Limits of Vertical 4H-SiC and 2H-GaN Superjunction Devices| 2019
- 697
-
First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC: A Proof of Concept| 2019
- 701
-
Development of SOI FETs Based on Core-Shell Si/SiC Nanowires for Sensing in Liquid Environments| 2019
- 709
-
Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing| 2019
- 714
-
First-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiC| 2019
- 718
-
Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models| 2019
- 722
-
Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons| 2019
- 726
-
Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors| 2019
- 730
-
Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature| 2019
- 734
-
Change in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal Annealing| 2019
- 738
-
Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs| 2019
- 745
-
Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers| 2019
- 749
-
Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs| 2019
- 753
-
1200 V SiC MOSFETs with Stable VTH under High Temperature Gate Bias Stress| 2019
- 757
-
Influence of High-Temperature Bias Stress on Room-Temperature VT Drift Measurements in SiC Power MOSFETs| 2019
- 763
-
Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors| 2019
- 768
-
Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs| 2019
- 773
-
Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs| 2019
- 777
-
Avalanche Robustness of 4600 V SiC DMOSFETs| 2019
- 782
-
Reliability and Ruggedness of Planar Silicon Carbide MOSFETs| 2019
- 788
-
Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis| 2019
- 792
-
Comparative Study on the Repetitive Unclamped-Inductive-Switching Capability(R-UIS) of 1200V 160mOhm SiC Planar Gate MOSFETs| 2019
- 797
-
Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs| 2019
- 801
-
Optimization of 1700V SiC MOSFET for Short Circuit Ruggedness| 2019
- 805
-
Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions| 2019
- 813
-
Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages| 2019
- 818
-
A Monolithic 500°C D-Flip Flop Realized in Bipolar 4H-SiC TTL Technology| 2019
- 823
-
A Study on Fastening the Switching Speed for Wide Bandgap Semiconductor Based Super Cascode| 2019
- 827
-
Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation| 2019
- 832
-
High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor| 2019
- 837
-
4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters| 2019
- 841
-
SiC Vertical-Channel n- and p-JFETs Fully Fabricated by Ion Implantation| 2019
- 845
-
Improved Offset Voltage Stability of 4H-SiC CMOS Operational Amplifier by Increasing Gamma Irradiation Resistance| 2019
- 851
-
Comparative Study of Developed 1200V/50A Full SiC IEMOS and VMOS Power Module| 2019
- 855
-
An Efficient Simulation Methodology to Quantify the Impact of Parameter Fluctuations on the Electrothermal Behavior of Multichip SiC Power Modules| 2019
- 859
-
6.5 kV Si/SiC Hybrid Power Module Technology| 2019
- 864
-
Development of a High-Speed Switching Silicon Carbide Power Module| 2019
- 869
-
SiC Power Devices for Applications in Hybrid and Electric Vehicles| 2019
- 873
-
Power Loss Comparison in a BOOST PFC Circuit Considering the Reverse Recovery of the Forward Diode| 2019