4H-SiC Trench Structure Schottky Diodes (English)
National licence
- New search for: Aketa, Masatoshi
- New search for: Yokotsuji, Yuta
- New search for: Miura, Mineo
- New search for: Nakamura, Takashi
In:
Materials Science Forum
;
717-720
;
933-936
;
2012
- Article (Journal) / Electronic Resource
-
Title:4H-SiC Trench Structure Schottky Diodes
-
Contributors:
-
Published in:Materials Science Forum ; 717-720 ; 933-936
-
Publisher:
- New search for: Trans Tech Publications
-
Place of publication:Stafa-Zurich, Switzerland
-
Publication date:2012-05-14
-
Size:4 pages
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Electronic Resource
-
Language:English
-
Keywords:
-
Source:
Table of contents – Volume 717-720
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
-
Status of Large Diameter SiC Single Crystals| 2012
- 5
-
Preface, Sponsors, Committes and Overview| 2012
- 9
-
TSD Reduction by RAF (Repeated a-Face) Growth Method| 2012
- 13
-
Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals| 2012
- 17
-
Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter| 2012
- 17
-
Process and Crucible Modification for Growth of Highly Doped 4H-SiC Crystal with Larger DiameterPark, J.H. / Yang, T.K. / Kim, I.S. / Lee, W.J. / Yeo, I.G. / Eun, T.H. / Lee, S.S. / Kim, J.Y. / Chun, M.C. et al. | 2012
- 21
-
Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals| 2012
- 25
-
Analysis of Growth Velocity of SiС Growth by the Physical Vapor Transport Method| 2012
- 25
-
Analysis of Growth Velocity of SiC Growth by the Physical Vapor Transport MethodKakimoto, K. / Gao, B. / Shiramomo, T. / Nakano, S. / Nishizawa, S. et al. | 2012
- 29
-
Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method| 2012
- 33
-
Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy| 2012
- 33
-
Lateral Growth Expansion of 4H/6H-SiC m-Plane Pseudo Fiber Crystals by Hot Wall CVD EpitaxyTrunek, A.J. / Neudeck, P.G. / Woodworth, A.A. / Powell, J.A. / Spry, D.J. / Raghothamachar, B. / Dudley, M. et al. | 2012
- 37
-
Synthesis and Purification of Silicon Carbide Powders for Crystal Growth| 2012
- 41
-
Bulk and Surface Effects on the Polytype Stability in SiC Crystals| 2012
- 45
-
Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution| 2012
- 49
-
SiC Growth by Solvent-Laser Heated Floating Zone| 2012
- 53
-
Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth| 2012
- 57
-
Control of Void Formation in 4H-SiC Solution Growth| 2012
- 61
-
Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt| 2012
- 65
-
Growth of a Thick 2H-SiC Layer in Si-Li Solution under a Continuous CH4 Flow| 2012
- 69
-
Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent| 2012
- 75
-
SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor| 2012
- 81
-
Growth of 4H-SiC Epilayers and Z1/2 Center Elimination| 2012
- 87
-
Growth and Light Properties of Fluorescent SiC for White LEDs| 2012
- 93
-
High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4^o Off-Axis 4H-SiCDas, H. / Sunkari, S. / Oldham, T. / Casady, J. et al. | 2012
- 93
-
High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC| 2012
- 97
-
Epitaxial Growth of 4H-SiC using Si~2(CH~3)~6+Si~2Cl~6+C~3H~8+H~2 System by Atmospheric Pressure Hot CVD MethodLee, H.S. / Kim, M.J. / Kim, M.H. / Lee, S.I. / Lee, W.J. / Shin, B.C. / Nishino, S. et al. | 2012
- 97
-
Epitaxial Growth of 4H-SiС Using Si2(CH3)6+Si2Cl6+C3H8+H2 System by Atmospheric Pressure Hot CVD Method| 2012
- 101
-
4H-SiC Epitaxial Growth on 2° Off-Axis Substrates using Trichlorosilane (TCS)| 2012
- 101
-
4H-SiC Epitaxial Growth on 2^o Off-Axis Substrates using Trichlorosilane (TCS)Aigo, T. / Ito, W. / Tsuge, H. / Yashiro, H. / Katsuno, M. / Fujimoto, T. / Ohashi, W. et al. | 2012
- 105
-
Development of Vertical 3''x2'' LPCVD System for Fast Epitaxial Growth on 4H-SiCZhao, W.S. / Sun, G.S. / Wu, H.L. / Yan, G.G. / Zheng, L. / Dong, L. / Wang, L. / Liu, X.F. / Yang, L.J. et al. | 2012
- 105
-
Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC| 2012
- 109
-
Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions| 2012
- 113
-
Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles| 2012
- 117
-
Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases| 2012
- 121
-
In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors| 2012
- 125
-
Investigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching Method| 2012
- 129
-
Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method| 2012
- 133
-
Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications| 2012
- 137
-
Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates| 2012
- 141
-
Improvement of Homeopitaxial Layer Quality Grown on 4H-SiC Si-Face Substrate Lower than 1 Degree Off AngleKojima, K. / Ito, S. / Nagata, A. / Okumura, H. et al. | 2012
- 141
-
Improvement of Homoepitaxial Layer Quality Grown on 4H-SiС Si-Face Substrate Lower than 1 Degree Off Angle| 2012
- 145
-
Surface Morphology Evolution after Epitaxial Growth on 4^o Off-Axis 4H-SiC SubstrateJegenyes, N. / Souliere, V. / Cauwet, F. / Ferro, G. et al. | 2012
- 145
-
Surface Morphology Evolution after Epitaxial Growth on 4°Off-Axis 4H-SiC Substrate| 2012
- 149
-
Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films| 2012
- 153
-
Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth| 2012
- 157
-
Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC| 2012
- 161
-
The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers| 2012
- 165
-
Study of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned SiС Substrate| 2012
- 165
-
Study of the Lateral Growth by VLS Mechanism using Al-Based Melts on Patterned SiC SubstrateLorenzzi, J. / Esteve, R. / Lazar, M. / Tournier, D. / Carole, D. / Ferro, G. et al. | 2012
- 169
-
Buried Selective Growth of p-Doped SiC by VLS Epitaxy| 2012
- 173
-
Reliable Method for Eliminating Stacking Faults on 3C-SiC(001)Hatta, N. / Kawahara, T. / Yagi, K. / Nagasawa, H. / Reshanov, S. / Schoner, A. et al. | 2012
- 173
-
Reliable Method for Eliminating Stacking Fault on 3C-SiC(001)| 2012
- 177
-
Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon| 2012
- 181
-
Effect of Propane on Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD| 2012
- 181
-
Effects of Propane on Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVDShimizu, H. / Watanabe, T. et al. | 2012
- 185
-
Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si <111> Substrates| 2012
- 189
-
CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates| 2012
- 193
-
On Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC Substrates| 2012
- 197
-
SixCy Thin Films Deposited at Low Temperature by DC Dual Magnetron Sputtering: Effect of Power Supplied to Si and C Cathode Targets on Film Physicochemical Properties| 2012
- 205
-
Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from Ab Initio Calculations| 2012
- 211
-
Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC| 2012
- 217
-
Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies| 2012
- 221
-
Mn Implantation for New Applications of 4H-SiC| 2012
- 225
-
Diffusion and Gettering of Transition Metals in 4H-SiC| 2012
- 229
-
Chlorine in SiC: Experiment and Theory| 2012
- 233
-
Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide| 2012
- 237
-
Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC| 2012
- 241
-
Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model| 2012
- 247
-
On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps| 2012
- 251
-
Z1/2- and EH6-Center in 4H-SiC: Not Identical Defects ?| 2012
- 255
-
Excitation Properties of Silicon Vacancy in Silicon Carbide| 2012
- 259
-
Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy| 2012
- 263
-
Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC| 2012
- 267
-
Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency| 2012
- 271
-
Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy| 2012
- 271
-
Effects of Sacrificial Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient SpectroscopyNishikawa, S. / Okada, R. / Matsuura, H. et al. | 2012
- 275
-
Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding| 2012
- 279
-
Long Carrier Lifetimes in n-Type 4H-SiC Epilayers| 2012
- 285
-
Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers| 2012
- 289
-
Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation| 2012
- 293
-
High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers| 2012
- 297
-
Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers| 2012
- 301
-
Characterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor Switches| 2012
- 305
-
Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer| 2012
- 309
-
Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes| 2012
- 313
-
Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers| 2012
- 319
-
Fourier Transform Analysis of Basal Plane Dislocation Structure in Repeated A-Face Grown Crystals| 2012
- 323
-
X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC| 2012
- 327
-
Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC| 2012
- 331
-
Identification of the Basal Plane Component of the Burgers Vector of Small Dislocations in 6H SiC Using Birefringence Microscopy| 2012
- 335
-
Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers| 2012
- 339
-
Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC| 2012
- 343
-
Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC| 2012
- 347
-
Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults| 2012
- 351
-
Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth| 2012
- 355
-
Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals| 2012
- 359
-
Correlation between Surface Morphological Defects and Crystallographic Defects in SiC| 2012
- 363
-
Characterization of Triangular-Defects in 4^o Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron MicroscopyYamashita, T. / Momose, K. / Muto, D. / Shimodaira, Y. / Yamatake, K. / Miyasaka, Y. / Sato, T. / Matsuhata, H. / Kitabatake, M. et al. | 2012
- 363
-
Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy| 2012
- 367
-
Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer| 2012
- 371
-
Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode| 2012
- 375
-
Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diode by Atomic Force MicroscopyKatsuno, T. / Watanabe, Y. / Ishikawa, T. / Fujiwara, H. / Konishi, M. / Morino, T. / Endo, T. et al. | 2012
- 375
-
Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope| 2012
- 379
-
Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF3 Gas| 2012
- 379
-
Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by ClF~3 GasHabuka, H. / Furukawa, K. / Kanai, T. / Kato, T. et al. | 2012
- 383
-
Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate| 2012
- 387
-
Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes| 2012
- 391
-
Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers| 2012
- 395
-
Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC| 2012
- 399
-
Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density| 2012
- 403
-
Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging| 2012
- 407
-
Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates| 2012
- 411
-
Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals| 2012
- 415
-
Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping| 2012
- 419
-
On the Twin Boundary Propagation in (111) 3C-SiC Layers| 2012
- 423
-
Defect Structures at the Silicon/3C-SiC Interface| 2012
- 427
-
Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO2 Interfaces| 2012
- 433
-
Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap| 2012
- 437
-
Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs| 2012
- 441
-
Sub-Bandgap Light-Induced Carrier Generation at Room Temperature in Silicon Carbide MOS Capacitors| 2012
- 445
-
Oxidation-Induced Epilayer Carbon Di-Interstitials as a Major Cause of Endemically Poor Mobilities in 4H-SiC/SiO2 Structures| 2012
- 449
-
Silicon Carbide-Silicon Dioxide Transition Layer Mobility| 2012
- 453
-
Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs| 2012
- 457
-
Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation| 2012
- 457
-
Toital Near Interface Trap Density Calculation of 4H-SiC/SiO~2 Structures before and after Nitrogen PassivationSalemi, S. / Akturk, A. / Potbhare, S. / Lelis, A.J. / Goldsman, N. et al. | 2012
- 461
-
Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices| 2012
- 465
-
Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs| 2012
- 469
-
Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS Capacitors| 2012
- 473
-
Low Frequency Noise in 4H-SiC Lateral JFET Structures| 2012
- 473
-
Low Frequency Noise in 4H-SiC Lateral JEFT StructuresChan, H.K. / Stevens, R.C. / Goss, J.P. / Wright, N.G. / Horsfall, A.B. et al. | 2012
- 477
-
Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide| 2012
- 481
-
Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals| 2012
- 485
-
Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC| 2012
- 489
-
High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals| 2012
- 493
-
On the Stability of 3C-SiC Single Crystals at High Temperatures| 2012
- 497
-
XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal| 2012
- 501
-
Origin of the Warpage of 3C-SiC Wafer: Effect of Nonuniform Intrinsic Stress| 2012
- 505
-
Raman Scattering and X-Ray Absorption from CVD Grown 3C-SiC on Si| 2012
- 509
-
4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering| 2012
- 513
-
Mechanical Properties of Cubic SiC, GaN and AlN Thin Films| 2012
- 517
-
Extended Characterization of the Stress Fields in the Heteroepitaxial Growth of 3C-SiC on Silicon for Sensors and Device Applications| 2012
- 521
-
Stress Evaluation on Hetero-Epitaxial 3C-SiC Film on (100) Si Substrates| 2012
- 521
-
Stress Evaluation on Hetero-Epitaxial 3C-SiC Films on (100) Si SubstratesAnzalone, R. / Camarda, M. / Locke, C. / Carballo, J. / Piluso, N. / D Arrigo, G. / Severino, A. / Volinsky, A.A. / Saddow, S.E. / La Via, F. et al. | 2012
- 525
-
Micro-Raman Analysis of a Micromachined 3C-SiC Cantilever| 2012
- 529
-
Single-Crystal SiC Resonators by Photoelectrochemical Etching| 2012
- 533
-
Amorphous Silicon Carbide (α-SiC) Thin Square Membranes for Resonant Micromechanical Devices| 2012
- 533
-
Amorphous Silicon Carbide ( alpha -SiC) Thin Square Membranes for Resonant Micromechanical DevicesBarnes, A.C. / Zorman, C.A. / Feng, P.X.L. et al. | 2012
- 537
-
Amorphous Silicon Carbide as a Non-Biofouling Structural Material for Biomedical Microdevices| 2012
- 541
-
Seebeck Coefficient of Heavily Doped Polycrystalline 3C-SiC Deposited by LPCVD| 2012
- 545
-
OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients| 2012
- 549
-
Radiation Hardness of Wide-Bandgap Materials as Exemplified by SiC Nuclear Radiation Detectors| 2012
- 553
-
Terahertz Electroluminescence of 6H-SiC Natural SiC Superlattice in Bloch Oscillations Regime| 2012
- 557
-
Emission Enhancement of SiC/SiO2 Core/Shell Nanowires Induced by the Oxide Shell| 2012
- 561
-
Theoretical Study of Thermoelectric Properties of SiC Nanowires| 2012
- 565
-
GaAs Nanowires: A New Place to Explore Polytype Physics| 2012
- 569
-
The Atomic Step Induced by off Angle CMP Influences the Electrical Properties of the SiC Surface| 2012
- 573
-
Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible| 2012
- 577
-
Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching| 2012
- 581
-
First-Principles Analysis of Dissociative Absorption of HF Molecule at SiC Surface Step Edge| 2012
- 585
-
Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material| 2012
- 589
-
Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC| 2012
- 595
-
Electronic and Structural Properties of Turbostratic Epitaxial Graphene on the 6H-SiC (000-1) Surface| 2012
- 601
-
Spatially Graded Graphitization on 4H-SiC (0001) with Si-Sublimation Gradient for High Quality Epitaxial Graphene Growth| 2012
- 605
-
Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation| 2012
- 609
-
Graphene on Carbon-Face SiС{0001} Surfaces Formed in a Disilane Environment| 2012
- 609
-
Graphene on Carbon-Face SiC{0001} Surfaces Formed in a Disilane EnvironmentSrivastava, N. / He, G.W. / Feenstra, R.M. et al. | 2012
- 613
-
The Registry of Graphene Layers Grown on SiC(000-1).| 2012
- 617
-
Large Area Quasi-Free Standing Monolayer Graphene on 3C-SiC(111)| 2012
- 621
-
CVD Growth of Graphene on 2’’ 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer Homogeneity| 2012
- 625
-
Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)| 2012
- 629
-
Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide| 2012
- 633
-
Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces| 2012
- 637
-
Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)| 2012
- 641
-
Electrical Characterization of the Graphene-SiC Heterojunction| 2012
- 645
-
Epitaxial Single-Layer Graphene on the SiC Substrate| 2012
- 649
-
Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation| 2012
- 653
-
Studies of Li Intercalation into Epitaxial Graphene on SiC(0001)| 2012
- 657
-
Plasma-Based Chemical Modification of Epitaxial Graphene| 2012
- 661
-
Evidence of Electrochemical Graphene Functionalization by Raman Spectroscopy| 2012
- 665
-
Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene Using IR Reflection Spectroscopy| 2012
- 669
-
High Performance RF FETs Using High-k Dielectrics on Wafer-Scale Quasi-Free-Standing Epitaxial Graphene| 2012
- 675
-
Gated Epitaxial Graphene Devices| 2012
- 679
-
Suppression of Hole Current in Graphene Transistors with N-Type Doped SiC Source/Drain Regions| 2012
- 683
-
T- and Y-Branched Three-Terminal Junction Graphene Devices| 2012
- 687
-
Development of FETs and Resistive Devices Based on Epitaxially Grown Single Layer Graphene on SiC for Highly Sensitive Gas Detection| 2012
- 691
-
Temperature Dependent Chemical Sensitivity of Epitaxial Graphene| 2012
- 697
-
Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and (000-1) C-Face Substrates| 2012
- 703
-
Challenges of High-Performance and High-Reliability in SiC MOS StructuresSenzaki, J. / Shimozato, A. / Kojima, K. / Kato, T. / Tanaka, Y. / Fukuda, K. / Okumura, H. et al. | 2012
- 703
-
Challenges of High-Performance and High-Reliablity in SiC MOS Structures| 2012
- 709
-
Effect of Post-Oxidation Annealing in Wet O2 and N2O Ambient on Thermally Grown SiO2/4H-SiC Interface for P-Channel MOS Devices| 2012
- 713
-
Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs| 2012
- 717
-
Effects of N Incorporation on Electron Traps at SiO2/SiC Interfaces| 2012
- 721
-
Impact of Interface Defect Passivation on Conduction Band Offset at SiO2/4H-SiC Interface| 2012
- 725
-
Effect of Direct Nitridation of 4H-SiC Surface on MOS Interface States| 2012
- 729
-
Improved Deposited Oxide Interfaces from N2 Conditioning of Bare SiC Surfaces| 2012
- 733
-
Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide| 2012
- 739
-
Effect of POCl3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC| 2012
- 743
-
The Effects of Phosphorus at the SiO2/4H-SiC Interface| 2012
- 747
-
SiO2/SiC Interfacial Region: Presence of Silicon Oxycarbides and Effects of Hydrogen Peroxide and Water Vapor Thermal Treatments| 2012
- 753
-
Improvement in the SiO2/4H-SiC Interfacial Region by Thermal Treatments with Hydrogen Peroxide| 2012
- 757
-
Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation| 2012
- 761
-
Passivation and Depassivation of Interface Traps at the SiO2/4H-SiC Interface by Potassium Ions| 2012
- 765
-
Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices| 2012
- 769
-
Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors| 2012
- 773
-
Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures| 2012
- 777
-
A Reduction of Defects in the SiO2-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)| 2012
- 781
-
Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well| 2012
- 785
-
Two-Dimensional Roughness Growth at Surface and Interface of SiO2 Films during Thermal Oxidation of 4H-SiC(0001)| 2012
- 789
-
Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face| 2012
- 793
-
Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs| 2012
- 797
-
Implementation of Sub-Resolvable Features for Precise Electrical Characterization of SiC Gate Oxide Parameters| 2012
- 801
-
Identification of Slow States at the SiO2/SiC Interface through Sub-Bandgap Illumination| 2012
- 805
-
Effect of Nuclear Scattering Damage at SiO2/SiC and Al2O3/SiC Interfaces – a Radiation Hardness Study of Dielectrics| 2012
- 809
-
High Temperature Reliability of High-k/SiC MIS Hydrogen Sensors| 2012
- 809
-
High Temperature Reliability of High- kappa /SiC MIS Hydrogen SensorsFurnival, B.J.D. / Wright, N.G. / Horsfall, A.B. et al. | 2012
- 813
-
Shallow Incorporation of Nitrogen in HPSI 4H-SiC through the Laser Enhanced Diffusion Process| 2012
- 817
-
High Dose Al+ Implanted and Microwave Annealed 4H-SiC| 2012
- 821
-
High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices| 2012
- 825
-
Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC| 2012
- 829
-
The Thickness-Ratio Effects of Ni/Nb Electrode on Wire Bonding Strength with N-Type 4H-SiC| 2012
- 833
-
The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC| 2012
- 837
-
Electroless Nickel for N-Type Contact on 4H-SiC| 2012
- 841
-
Development of an Extreme High Temperature n-Type Ohmic Contact to Silicon Carbide| 2012
- 845
-
Investigation of Ti3SiC2 MAX Phase Formation onto N-Type 4H-SiC| 2012
- 849
-
GaZnO as a Transparent Electrode to Silicon Carbide| 2012
- 853
-
Common Metal Die Attachment for SiC Power Devices Operated in an Extended Junction Temperature Range| 2012
- 857
-
Metal Work-function and Doping-Concentration Dependent Barrier Height of Ni-Contacts to 4H-SiC with Metal-Embedded Nano-Particles| 2012
- 861
-
Cutting Speed of Electric Discharge Machining for SiC Ingot| 2012
- 865
-
Cutting of SiC Wafer by Atmospheric-Pressure Plasma Etching with Wire Electrode| 2012
- 869
-
Curious Relationship between Orientation of SiC Substrates and Chemical Reactivity| 2012
- 873
-
High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching| 2012
- 877
-
Novel Cleaning Method of SiC Wafer with Transition Metal Complex| 2012
- 881
-
Clearance of 4H-SiC Sub-Trench in Hot Chlorine Treatment| 2012
- 885
-
SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements| 2012
- 889
-
Focused Ion-Beam (FIB) Nanomachining of Silicon Carbide (SiC) Stencil Masks for Nanoscale Patterning| 2012
- 893
-
Hexagonal Faceted SiC Nanopillars Fabricated by Inductively Coupled SF6/O2 Plasma Method| 2012
- 897
-
Epitaxial Growth, Mechanical and Electrical Properties of SiC/Si and SiC/Poly-SiBosi, M. / Attolini, G. / Watts, B.E. / Roncaglia, A. / Poggi, A. / Mancarella, F. / Moscatelli, F. / Belsito, L. / Ferri, M. et al. | 2012
- 897
-
Epitaxial Growth, Mechanical, Electrical Properties of SiC/Si and SiC/Poli-Si| 2012
- 901
-
ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures| 2012
- 905
-
Local Anodic Oxidation of Phosphorus-Implanted 4H-SiC by Atomic Force MicroscopyLee, J.H. / Ahn, J.J. / Hallen, A. / Zetterling, C.M. / Koo, S.M. et al. | 2012
- 905
-
Local Anodic Oxidation of Phosporous-Implanted 4H-SiC by Atomic Force Microscopy| 2012
- 911
-
Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes| 2012
- 917
-
Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature| 2012
- 921
-
Performance of a 650V SiC Diode with Reduced Chip Thickness| 2012
- 925
-
A Fully Electrically Isolated Package for High Temperature SiC Sensors| 2012
- 929
-
Current Distribution in the Various Functional Areas of a 600V SiC MPS Diode in Forward Operation| 2012
- 933
-
4H-SiC Trench Structure Schottky Diodes| 2012
- 937
-
Influence of Anode Layout on the Performance of SiC JBS Diodes| 2012
- 941
-
Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT| 2012
- 945
-
Hybrid Si-IGBT/SiC Rectifier Co-Packs and SiC JBS Rectifiers Offering Superior Surge Current Capability and Reduced Power Losses| 2012
- 949
-
12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes| 2012
- 953
-
Design, Yield and Process Capability Study of 8 kV 4H-SiC PIN Diodes| 2012
- 957
-
Characterization of Packaged 6.5 kV SiC PiN-Diodes up to 300 °C| 2012
- 957
-
Characterization of Packaged 6.5 kV SiC PiN-Diodes up to 300 ^oCDohnke, K.O. / Peters, D. / Schorner, R. et al. | 2012
- 961
-
11.72 cm2 SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN Diode| 2012
- 965
-
Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode| 2012
- 969
-
600 V PIN Diodes Fabricated Using On-Axis 4H Silicon Carbide| 2012
- 973
-
Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes| 2012
- 977
-
Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices| 2012
- 981
-
Positive Temperature Coefficient SiC PiN Diodes| 2012
- 985
-
Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers| 2012
- 989
-
Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation| 2012
- 993
-
Physical Modelling of 4H-SiC PiN Diodes| 2012
- 997
-
Thermal Stress Response of Silicon Carbide pin Diodes Used as Photovoltaic Devices| 2012
- 1001
-
Effect of Surface Morphology on the On-State Resistance of SiC Photoconductive Semiconductor Switches| 2012
- 1005
-
Novel Low VON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height Control| 2012
- 1009
-
Fabrication of 4H-SiC/Nanocrystalline Diamond PN Junctions| 2012
- 1013
-
Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors| 2012
- 1017
-
Demonstration of SiC Vertical Trench JFET Reliability| 2012
- 1021
-
Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing| 2012
- 1025
-
Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors| 2012
- 1029
-
Characterization of SiC JFET in Novel Packaging for 1 MHz Operation| 2012
- 1033
-
Packaging Technologies for 500°C SiC Electronics and Sensors| 2012
- 1033
-
Packaging Technologies for 500^oC SiC Electronics and SensorsChen, L.Y. / Johnson, R.W. / Neudeck, P.G. / Beheim, G.M. / Spry, D.J. / Meredith, R.D. / Hunter, G.W. et al. | 2012
- 1037
-
High Voltage SiC Vertical JFET for High Power RF Applications| 2012
- 1041
-
Design of an Integrated SiC JFET Power Switch and Flyback Diode| 2012
- 1045
-
A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOASung, W. / Baliga, B.J. / Huang, A.Q. et al. | 2012