Extension, Closure and Conversion of In-Grown Stacking Faults in 4H-SiC Epilayers (English)
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In:
Materials Science Forum
;
924
;
155-159
;
2018
- Article (Journal) / Electronic Resource
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Title:Extension, Closure and Conversion of In-Grown Stacking Faults in 4H-SiC Epilayers
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Contributors:
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Published in:Materials Science Forum ; 924 ; 155-159
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Publisher:
- New search for: Trans Tech Publications
-
Place of publication:Stafa-Zurich, Switzerland
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Publication date:2018-06-05
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 924
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- -3
-
Preface| 2018
- 5
-
SEMI Standards for SiC Wafers| 2018
- 11
-
Optimization of 150 mm 4H SiC Substrate Crystal Quality| 2018
- 15
-
Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method| 2018
- 19
-
Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals| 2018
- 23
-
Resistivity Increase in 6H-SiC Crystal Grown with Simple Modification in PVT Process| 2018
- 27
-
The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC Crystal| 2018
- 31
-
Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique| 2018
- 35
-
Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si| 2018
- 39
-
Dislocation Behavior in Bulk Crystals Grown by TSSG Method| 2018
- 43
-
Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M = Transition Metal) Solvents for Solution Growth of SiC| 2018
- 47
-
Modification of Crucible Shape in Top Seeded Solution Growth of SiC Crystal| 2018
- 51
-
Solution Growth of SiC from the Crucible Bottom with Dipping under Unsaturation State of Carbon in Solvent| 2018
- 55
-
Influence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC| 2018
- 60
-
Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method| 2018
- 67
-
Status and Trends in Epitaxy and Defects| 2018
- 72
-
99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD| 2018
- 76
-
Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor| 2018
- 80
-
Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall Reactor| 2018
- 84
-
Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer| 2018
- 88
-
High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool| 2018
- 92
-
Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor| 2018
- 96
-
Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor| 2018
- 100
-
Understanding the Chemistry in Silicon Carbide Chemical Vapor Deposition| 2018
- 104
-
Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor| 2018
- 108
-
Reduction of Surface and PL Defects on n-Type 4H-SiC Epitaxial Films Grown Using a High Speed Wafer Rotation Vertical CVD Tool| 2018
- 112
-
Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC| 2018
- 116
-
CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode| 2018
- 120
-
Hot Filament CVD Growth of 4H-SiC Epitaxial Layers| 2018
- 124
-
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films| 2018
- 128
-
Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed| 2018
- 137
-
Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices| 2018
- 143
-
Comparative Evaluation of Forward Voltage Degradation due to Propagating and Converted Basal Plane Dislocations| 2018
- 147
-
Defects and Polytype Instabilities| 2018
- 151
-
Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation| 2018
- 155
-
Extension, Closure and Conversion of In-Grown Stacking Faults in 4H-SiC Epilayers| 2018
- 160
-
Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal| 2018
- 164
-
Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices| 2018
- 168
-
Origin Analysis and Elimination of Obtuse Triangular Defects in 4° Off 4H-SiC Epitaxy| 2018
- 172
-
In Situ Synchrotron X-Ray Topography Observation of Double-Ended Frank-Read Sources in PVT-Grown 4H-SiC Wafers| 2018
- 176
-
Direct Observation of Stress Relaxation Process in 4H-SiC Homoepitaxial Layers via In Situ Synchrotron X-Ray Topography| 2018
- 180
-
X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method| 2018
- 184
-
Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices| 2018
- 188
-
Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC| 2018
- 192
-
Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide| 2018
- 196
-
Optical Stressing of 4H-SiC Material and Devices| 2018
- 200
-
Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiС| 2018
- 204
-
Various Single Photon Sources Observed in SiC Pin Diodes| 2018
- 208
-
Dislocation Analysis of p Type and Insulating HPHT Diamond Seed Crystals| 2018
- 212
-
Influence of Dislocations to the Diamond SBD Reverse Characteristics| 2018
- 217
-
Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures| 2018
- 221
-
Optical and Microstructural Investigation of Heavy B-Doping Effects in Sublimation-Grown 3C-SiC| 2018
- 225
-
Deep Level Defects in 4H-SiC Epitaxial Layers| 2018
- 229
-
Radiation Hardness for Silicon Oxide and Aluminum Oxide on 4H-SiC| 2018
- 233
-
Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC| 2018
- 239
-
High Resolution Optical Spectroscopy of Free Exciton and Electronic Band Structure near the Fundamental Gap in 4H SiC| 2018
- 245
-
Growth Conditions and In Situ Computed Tomography Analysis of Facetted Bulk Growth of SiC Boules| 2018
- 249
-
Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient| 2018
- 253
-
The Effects of Illumination on Point Defects Detected in High Purity Semi-Insulating 4H-SiC| 2018
- 257
-
Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n+p 4H-SiC Structures| 2018
- 261
-
Evaluation of the Effect of Ultraviolet Light Excitation during Characterization of Silicon Carbide Epitaxial Layers| 2018
- 265
-
Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption| 2018
- 269
-
Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC| 2018
- 273
-
Characterization of Inhomogeneity in Thermal Oxide SiO2 Films on 4H-SiC Epitaxial Substrates by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy| 2018
- 277
-
Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs| 2018
- 281
-
Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs| 2018
- 285
-
Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs| 2018
- 289
-
Improvement of Local Deep Level Transient Spectroscopy for Microscopic Evaluation of SiO2/4H-SiC Interfaces| 2018
- 293
-
Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals| 2018
- 297
-
Electrical Challenges of Heteroepitaxial 3C-Sic on Silicon| 2018
- 302
-
Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes| 2018
- 306
-
Structural Quality, Polishing and Thermal Stability of 3C-SiC/Si Templates| 2018
- 310
-
THz Emission from SiC Natural Superlattice Diodes Induced by Strong Electrical Field| 2018
- 314
-
Infrared Reflectance Study of the Graphene/Semi-Insulating 6H-SiC(0001) Heterostructure| 2018
- 318
-
Influence of Aluminum Incorporation on Mechanical Properties of 3C-SiC Epilayers| 2018
- 322
-
Chemical Trend in Band Structure of 3d-Transition-Metal-Doped AlN Films| 2018
- 333
-
About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C| 2018
- 339
-
Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology| 2018
- 345
-
Application of Si-Vapor Ambient Anneal for Post Ion Implantation Anneal and Simultaneous Improvement of Trench Sidewall Smoothness| 2018
- 349
-
Characterization of pn-Diode Fabricated from Surface Damage-Free 4H-SiC Wafer Using Si-Vapor Etching Process| 2018
- 353
-
Effect of Ion Implantation-Induced Defects on Leakage Current Characteristics of IEMOS| 2018
- 357
-
Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET| 2018
- 361
-
Influence of Lateral Straggling of Implated Aluminum Ions on High Voltage 4H-SiC Device Edge Termination Design| 2018
- 365
-
Investigation of Forward Voltage Degradation due to Process-Induced Defects in 4H-SiC MOSFET| 2018
- 369
-
4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching| 2018
- 373
-
Surface Erosion of Ion-Implanted 4H-SiC during Annealing with Carbon Cap| 2018
- 377
-
Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC| 2018
- 381
-
Pt:Ti Diffusion Barrier, Interconnect, and Simultaneous Ohmic Contacts to n- and p-Type 4H-SiC| 2018
- 385
-
Ni-Al-Ti Ohmic Contacts with Preserved Form Factor and Few 10- 4 Ωcm2 Specific Resistance on 0.1-1 Ωcm p-Type 4H-SiC| 2018
- 389
-
Low Temperature Ni-Al Ohmic Contacts to p-Type 4H-SiC Using Semi-Salicide Processing| 2018
- 393
-
Influence of Al Doping Concentration and Annealing Parameters on TiAl Based Ohmic Contacts on 4H-SiC| 2018
- 397
-
Formation of the Uniform Interface Ni/4H-SiC Ohmic Contact with Titanium as Barrier Layer| 2018
- 401
-
Extremely Thermal Stable Ni/W/TaSi2/Pt Simultaneous Ohmic Contacts to n-Type and p-Type 4H-SiC| 2018
- 405
-
Electrical Property Study of Ni/Nb Contact to n-Type 4H-SiC| 2018
- 409
-
Low Resistance Ti5Si3/TiC Ohmic contact on Ion-Implanted n-Type 4H-SiC C Face| 2018
- 413
-
Formation of Ohmic Contacts to n-Type 4H-SiC at Low Annealing Temperatures| 2018
- 419
-
Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs| 2018
- 423
-
4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts| 2018
- 428
-
Effect of Design Variations and N2O Annealing on 1.7kV 4H-SiC Diodes| 2018
- 432
-
Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation| 2018
- 436
-
Local Lifetime Control in 4H-SiC by Proton Irradiation| 2018
- 440
-
Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment| 2018
- 444
-
Isotropic Oxidation by Plasma Oxidation and Investigation of RIE Induced Effects for Development of 4H-SiC Trench MOSFETs| 2018
- 449
-
Study on NO Passivation on the Near Interface Electron and Hole Traps of n-Type 4H-SiC MOS Capacitors by Ultraviolet Light| 2018
- 453
-
Oxygen Pressure Controlled Oxidation for Gate Insulator Process of SiC MOSFETs| 2018
- 457
-
Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability| 2018
- 461
-
Improvement of SiO2/4H-SiC(0001) Interface Properties by H2 and Ar Mixture Gas Treatment Prior to SiO2 Deposition| 2018
- 465
-
Effects of CF4 Surface Etching on 4H-SiC MOS Capacitors| 2018
- 469
-
The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping| 2018
- 473
-
Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors| 2018
- 477
-
Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium| 2018
- 482
-
Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO2 Gate Dielectric| 2018
- 486
-
Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al2O3 MOS Capacitors| 2018
- 490
-
Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3| 2018
- 494
-
High-Mobility SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate Stack| 2018
- 498
-
Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiO2| 2018
- 502
-
Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs| 2018
- 506
-
MOCVD Compatible Atomic Layer Deposition Process of Al2O3 on SiC and Graphene/SiC Heterostructures| 2018
- 513
-
Incoming and Inline Defectivity Control Solutions for Silicon Carbide Manufacturing| 2018
- 518
-
Regional Manufacturing Cost Structures and Supply Chain Considerations for SiC Power Electronics in Medium Voltage Motor Drives| 2018
- 523
-
PRESiCETM: Process Engineered for Manufacturing SiC Electronic Devices| 2018
- 527
-
Automated Mapping of Micropipes in SiC Wafers Using Polarized-Light Microscope| 2018
- 531
-
Crystal Defect Analysis of Latent Scratch Induced during CMP Process on 4H-SiC Wafer Using Electron Microscopy| 2018
- 535
-
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate| 2018
- 539
-
Surface Engineering of SiC through Nanogrinding and CMP| 2018
- 543
-
Observation of a Latent Scratch on Chemo-Mechanical Polished 4H-SiC Wafer by Mirror Projection Electron Microscopy| 2018
- 547
-
TLS-Dicing for SiC - Latest Assessment Results| 2018
- 559
-
Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout| 2018
- 563
-
Practical Design of 4H-SiC Superjunction Devices in the Presence of Charge Imbalance| 2018
- 568
-
Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes| 2018
- 573
-
Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (>12MeV) of Al+ and B+| 2018
- 577
-
Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode| 2018
- 581
-
H3TRB Test on 650 V SiC JBS Diodes| 2018
- 585
-
4H-SiC 1200 V Junction Barrier Schottky Diodes with High Avalanche Ruggedness| 2018
- 589
-
Study of Temperature-Dependent Mechanisms and Characteristics of 4H-SiC Junction Barrier Schottky Rectifiers| 2018
- 593
-
Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes| 2018
- 597
-
Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Applications| 2018
- 601
-
Multi-Level Trap Assisted Tunneling Model for the Field and Temperature Dependence of SiC-JBS Reverse Leakage Current| 2018
- 605
-
Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes| 2018
- 609
-
SiC MPS Devices: One Step Closer to the Ideal Diode| 2018
- 613
-
Design and Manufacturing of 1200V SiC JBS Diodes with Low On-State Voltage Drop and Reverse Blocking Leakage Current| 2018
- 617
-
Breakdown Field Model for 3C-SiC Power Device Simulations| 2018
- 621
-
Analysis of Forward Surge Performance of SiC Schottky Diodes| 2018
- 625
-
A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure| 2018
- 629
-
Effects of Parasitic Region in SiC Bipolar Junction Transistors on Forced Current Gain| 2018
- 633
-
Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes| 2018
- 637
-
Impact of Cell Layout and Device Structure on On-Voltage Reduction of 6.5-kV n-Channel SiC IGBTs| 2018
- 641
-
High Workfunction, Compound Gate Metal Engineering for Low DIBL, High Gain, High Density Advanced RF Power Static Induction Transistor (SIT) and HV Schottky Diode in 4H Silicon Carbide| 2018
- 645
-
Investigation of 4H-SiC Extraction-Enhanced Vertical Insulated-Gate Bipolar Transistor with Lightly Doped Extractor in Collector Region| 2018
- 649
-
A Continuous Semi-Empirical VJFET Capacitance Model from Sub to above Threshold Regime| 2018
- 653
-
Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques| 2018
- 657
-
On the Optimum Determination and Use of SiC VJFET Threshold Voltage| 2018
- 663
-
Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs| 2018
- 667
-
Hole Trapping in the NBTI Characteristic of SiC MOSFETs| 2018
- 671
-
Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning| 2018
- 676
-
Switching Reliability of SiC-MOSFETs Containing Expanded Stacking Faults| 2018
- 680
-
Vertical Tri-Gate Power MOSFETs in 4H-SiC| 2018
- 684
-
1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results| 2018
- 689
-
TCAD Modeling of a 1200 V SiC MOSFET| 2018
- 693
-
Simulation-Based Sensitivity Analysis of Conduction and Switching Losses for Silicon Carbide Power MOSFETs| 2018
- 697
-
Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry| 2018
- 703
-
4600 V Sic Dmosfets with RDS,On = 17 mΩ-cm2| 2018
- 707
-
4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology| 2018
- 711
-
Suppression of PBTI of SiC-MOSFETs under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V| 2018
- 715
-
Short-Circuit Robustness of SiC Trench MOSFETs| 2018
- 719
-
Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures| 2018
- 723
-
Impact of a Kelvin Source Connection on Discrete High Power SiC-MOSFETs| 2018
- 727
-
Suppression of Short-Circuit Current with Embedded Source Resistance in SiC-MOSFET| 2018
- 731
-
3300V SiC DMOSFETs Fabricated in High-Volume 150 mm CMOS Fab| 2018
- 735
-
Effect of Negative Gate Bias on Single Pulse Avalanche Ruggedness of 1.2 kV Silicon Carbide MOSFETs| 2018
- 739
-
Static and Dynamic Characterization of a 3.3 Kv, 45 A 4H-Sic MOSFET| 2018
- 743
-
Influences of Bias Interruption and Reapplication on High-Temperature Threshold-Voltage Shifts of SiC DMOSFETs| 2018
- 748
-
Role of Trench Bottom Shielding Region on Switching Characteristics of 4H-SiC Double-Trench Mosfets| 2018
- 752
-
Comparison of Single- and Double-Trench UMOSFETs in 4H-SiC| 2018
- 756
-
Impact of Cell Geometry on Zero-Energy Turn-Off of SiC Power MOSFETs| 2018
- 761
-
Impact of Stripe Trench-Gate Structure for 4H-SiC Trench MOSFET with Bottom Oxide Protection Layer| 2018
- 765
-
Shielded Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss| 2018
- 770
-
Development of a High-Performance 3,300V Silicon Carbide MOSFET| 2018
- 774
-
Comparison of 3C-SiC and 4H-SiC Power MOSFETs| 2018
- 778
-
Investigation of the Robust Edge Termination Applied to 6.5kV SiC MOSFET| 2018
- 782
-
Planar to Trench: Short Circuit Capability Analysis of 1.2 kV SiC MOSFETs| 2018
- 786
-
Continuous Compact Model of a SiC VDMOSFET Based on Surface Potential Theory| 2018
- 793
-
Recent Developments Accelerating SiC Adoption| 2018
- 799
-
Power Electronic Devices and Systems Based on Bulk GaN Substrates| 2018
- 805
-
Reliability Challenges for SiC Power Devices in Systems and the Impact on Reliability Testing| 2018
- 811
-
SiC MOSFET Device Parameter Spread and Ruggedness of Parallel Multichip Structures| 2018
- 818
-
An Experimental Demonstration of Short Circuit Protection of SiC Devices| 2018
- 822
-
650 V, 7 mΩ 4H-SiC DMOSFETs for Dual-Side Sintered Power Modules| 2018
- 827
-
Characterization and Modeling of a SiC MOSFET’s Turn-Off Overvoltage| 2018
- 832
-
1MHz Switching Operation of 1200V Full SiC Power Module| 2018
- 836
-
An Auxiliary Power Supply for Gate Drive of Medium Voltage SiC Devices in High Voltage Applications| 2018
- 841
-
30 kV Pulse Diode Stack Based on 4H-SiC| 2018
- 845
-
30-kW All-SiC Inverter with 3D-Printed Air-Cooled Heatsinks for Plug-In and Full Electric Vehicle Applications| 2018
- 849
-
Extremely Compact Half-Bridge SiC Power Modules Built into EV In-Wheel Motor| 2018
- 854
-
First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application| 2018
- 858
-
Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power| 2018
- 862
-
SiC JBS Diode Symmetrical Voltage Doubler Represented as the Diffusion-Welded Stack| 2018
- 866
-
The Development of High Thermal Conductivity SiC Power Modules through the Implementation of Advanced Cooling Techniques Coupled with High Heat Transfer Materials| 2018
- 871
-
Short-Circuit Capability of SiC Cascode| 2018
- 875
-
Benefits of High Voltage SiC Applications in Medium Voltage Power Distribution Grids| 2018
- 879
-
Design of SiC-Based DC-DC Converters for Future Offshore Wind Power Applications| 2018
- 883
-
Module and System Considerations to Maximize Performance Advantages of SiC Power Devices| 2018
- 887
-
Performance and Reliability Requirements for the Application of SiC Power MOSFET in Electrified Vehicle Drive Systems| 2018
- 895
-
Ab Initio Theory of Si-Vacancy Quantum Bits in 4H and 6H-SiC| 2018
- 901
-
Analytical Model for the Influence of the Gate-Voltage on the Forward Conduction Properties of the Body-Diode in SiC-MOSFETs| 2018
- 905
-
Processing of Cavities in SiC Material for Quantum Technologies| 2018
- 909
-
Graphene/SiC Functionalization for Blood Type Sensing Applications| 2018
- 913
-
3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)| 2018
- 919
-
Lateral GaN MISFETs Fabricated in Mg Ion Implanted Layer| 2018
- 923
-
High Quality AlN Single Crystal Substrates for AlGaN-Based Devices| 2018
- 927
-
Addressing the Properties of Ultranano- and Microcrystalline CVD Diamond Films Grown on 4H-SiC Substrates| 2018
- 931
-
Electrical Properties of Schottky-Diodes Based on B Doped Diamond| 2018
- 935
-
Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current| 2018
- 939
-
Analysis of ZrxSiyOz as High-k Dielectric for 4H-SiC MOSFETs| 2018
- 943
-
Electrochemical Formation of Porous Silicon Carbide for Micro-Device Applications| 2018
- 949
-
Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits| 2018
- 953
-
Design and Simulation of Bipolar 4H-SiC Memory Architecture for High Temperature Applications| 2018
- 958
-
Electrical Characterization of Integrated 2-Input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiС-Technology| 2018
- 962
-
Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors| 2018
- 967
-
High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes| 2018
- 971
-
Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics| 2018
- 975
-
Complementary p-Channel and n-Channel SiC MOSFETs for CMOS Integration| 2018
- 980
-
An Improved I-V Model of GaN HEMT for High Temperature Applications| 2018
- 984
-
Electrical Characterization of the Operational Amplifier Consisting of 4H-SiC MOSFETs after Gamma Irradiation| 2018
- 988
-
Magnetic Field Sensing with 4H SiC Diodes: N vs P Implantation| 2018
- 993
-
High Current Silicon Carbide Diodes as Dose Detectors for Hard X-Rays| 2018