A cost-effective thermal managed high output power VECSEL with hybrid mirror on Copper substrate at 1,55micrometer (English)
- New search for: Zhao, Z.
- New search for: Ferlazzo, L.
- New search for: Decobert, J.
- New search for: Harmand, J. L.
- New search for: Oudar, J. L.
- New search for: Bouchoule, S.
- New search for: Zhao, Z.
- New search for: Ferlazzo, L.
- New search for: Decobert, J.
- New search for: Harmand, J. L.
- New search for: Oudar, J. L.
- New search for: Bouchoule, S.
In:
IPRM 2011
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4
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2011
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ISBN:
- Conference paper / Electronic Resource
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Title:A cost-effective thermal managed high output power VECSEL with hybrid mirror on Copper substrate at 1,55micrometer
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Contributors:Zhao, Z. ( author ) / Ferlazzo, L. ( author ) / Decobert, J. ( author ) / Harmand, J. L. ( author ) / Oudar, J. L. ( author ) / Bouchoule, S. ( author )
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Conference:IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials ; 2011 ; Berlin, Germany
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Published in:IPRM 2011 ; 4
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Publisher:
- New search for: VDE VERLAG GMBH
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Publication date:2011-01-01
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Size:4 pages
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ISBN:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 37
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Low-threshold 3 µm GaInAsSb/AlGaInAsSb quantum-well lasers operating in continuous-wave up to 64 °CVizbaras, Kristijonas / Andrejev, Alexander / Vizbaras, Augustinas / Grasse, Christian / Arafin, Shamsul / Aman, Markus-Christian et al. | 2011
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Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer depositionSchleeh, J. / Halonen, J. / Nilsson, B. / Nilsson, P. Å. / Zeng, L. J. / Ramvall, P. / Wadefalk, N. / Zirath, H. / Olsson, E. / Grahn, J. et al. | 2011
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Uniform BCB Bonding Process Toward Low Propagation Loss in GaInAsP Photonic Wire Waveguide on Si WaferMaeda, Yasuna / Lee, Jieun / Atsumi, Yuki / Nishiyama, Nobuhiko / Arai, Shigehisa et al. | 2011
- 106
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Design improvements for InP-based 90°-hybrid OEICs for 100GE coherent frontendsKunkel, R. / Bach, H.G. / Zhang, R. / Hoffmann, D. / Schmidt, D. / Schell, M. / Ortega, Mofiux A. / Romero-Garcia, S. / Molina-Fernandez, I. / Halir, R. et al. | 2011
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A 300 GHz InP/GaAsSb/InP HBT for high data rate applicationsMaher, H. / Delmouly, V. / Rouchy, U. / Renvoise, M. / Frijlink, P. / Smith, D. / Zaknoune, M. / Ducatteau, D. / Avramovic, V. / Scavennec, A. et al. | 2011
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High quality photonic crystal waveguide filters based on mode-gap effectShahid, Naeem / Naureen, Shagufta / Li, Mingyu / Swillo, Marcin / Anand, Srinivasan et al. | 2011
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20 nm Metamorphic HEMT with 660 GHz FTLeuther, A. / Koch, S. / Tessmann, A. / Kallfass, I. / Merkle, T. / Massler, H. / Loesch, R. / Schlechtweg, M. / Saito, S. / Ambacher, O. et al. | 2011
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High-speed directly-modulated lasers with photon-photon resonanceDumitrescu, M. / Telkkälä, J. / Karinen, J. / Viheriälä, J. / Laakso, A. / Afzal, S. / Reithmaier, J.-P. / Kamp, M. / Melanen, P. / Uusimaa, P. et al. | 2011
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GaP(100) and InP(100) surface structures in the MOVPE ambientDöscher, H. / Möller, K. / Vogt, P. / Kleinschmidt, P. / Hannappel, T. et al. | 2011
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25-Gb/s multi-channel 1.3-µm surface-emitting laserAdachi, K. / Shinoda, K. / Kitatani, T. / Matsuoka, Y. / Sugawara, T. / Tsuji, S. et al. | 2011
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ALD Al2O3 Activated Direct Wafer Bonding for III-V CMOS Photonics PlatformIkku, Y. / Yokoyama, M. / Iida, R. / Sugiyama, M. / Nakano, Y. / Takenaka, M. / Takagi, S. et al. | 2011
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Characteristics of Step-Graded InxGa1-xAs and InGaPySb1-y Metamorphic Buffer Layers on GaAs SubstratesKirch, J. / Dudley, P. / Kim, T. / Radavich, K. / Ruder, S. / Mawst, L. J. / Kuech, T. F. / LaLumondiere, S. D. / Sin, Y. / Lotshaw, W. T. et al. | 2011
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A cost-effective thermal managed high output power VECSEL with hybrid mirror on Copper substrate at 1,55micrometerZhao, Z. / Ferlazzo, L. / Decobert, J. / Harmand, J. L. / Oudar, J. L. / Bouchoule, S. et al. | 2011
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A Generic InP-based Photonic Integration TechnologyAmbrosius, H. P. M. M. / Leijtens, X. J. M. / Vries, T. de / Bolk, J. / Smalbrugge, E. / Smit, M. K. et al. | 2011
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High performance InP-based Mach-Zehnder modulators for 10 to 100 Gb/s optical fiber transmission systemsVelthaus, K.-O. / Hamacher, M. / Gruner, M. / Brast, T. / Kaiser, R. / Prosyk, K. / Woods, I. et al. | 2011
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High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensorYatskiv, R. / Grym, J. / Zdansky, K. / Piksova, K. et al. | 2011
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Structural evaluation of InGaAs/GaAsP multiple quantum wells via in-situ wafer’s curvature measurement and ex-situ X-ray diffractionSodabanlu, H. / Ma, S. J. / Watanabe, K. / Sugiyama, M. / Nakano, Y. et al. | 2011
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AlGaInAs based photonic devices for high-speed data transmissionYamamoto, Tsuyoshi / Simoyama, Takasi / Tanaka, Shinsuke / Matsuda, Manabu / Uetake, Ayahito / Okumura, Shigekazu / Ekawa, Mitsuru / Morito, Ken et al. | 2011
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Electrical Pumping Febry-Perot Lasing of III-V Layer On Highly Doped Silicon Micro Rib by Plasma Assisted Direct BondingLi, Linghan / Takigawa, Ryo / Higo, Akio / Higurashi, Eiji / Sugiyama, Masakazu / Nakano, Yoshiaki et al. | 2011
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Metamorphic Te-doped Al0.4In0.6Sb/Ga0.4In0.6Sb HEMT structures for low power and high frequency applicationsLoesch, R. et al. | 2011
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Optimisation of seed and mask surfaces in epitaxial lateral overgrowth of indium phosphide on silicon for silicon photonicsJunesand, Carl / Hu, Chen / Wang, Zhechao / Metaferia, Wondwosen / Lourdudoss, Sebastian et al. | 2011
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MOVPE Growth and Optical Properties of Wurtzite InP Nanowires with Radial InP/InAsP Quantum WellsKawaguchi, Kenichi / Heurlin, Magnus / Lindgren, David / Borgström, Magnus T. / Samuelson, Lars et al. | 2011
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Noise Properties of Asymmetrically Recessed InP-based HEMTs for Low-noise AmplifiersTakahashi, T. / Sato, M. / Makiyama, K. / Nakasha, Y. / Hirose, T. / Hara, N. et al. | 2011
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On-chip Laser with Multimode Interference Reflectors Realized in a Generic Integration PlatformZhao, J. / Kleijn, E. / Williams, P. J. / Smit, M. K. / Leijtens, X. J. M. et al. | 2011
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Scanning tunneling microscopy and spectroscopy of InAsP/InP(001) quantum dotsFain, Bruno / Girard, J. C. / David, C. / Patriarche, G. / Largeau, L. / Beveratos, A. / Elvira, D. / Robert-Philip, I. / Beaudoin, G. / Sagnes, I. et al. | 2011
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Long wavelength emission from nano-cone structures with embedded single InAs/InGaAlAs quantum dots grown on InP substratesHermannstädter, C. / Huh, J.-H. / Jahan, N. A. / Sasakura, H. / Suemune, I. et al. | 2011
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High-yield Manufacturing of InP Dual-Port Coherent Receiver Photonic Integrated Circuits for 100G PDM-QPSK ApplicationHu, Ting-Chen / Weimann, N. / Houtsma, V. / Kopf, R. / Tate, A. / Frackoviak, J. / Reyes, R. / Chen, Y. K. / Achouche, M. / Lelarge, F. et al. | 2011
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High-speed and high-power InGaAs/InP photodiodeYang, Hua / Daunt, Chris / Lee, Kohsin / Han, Wei / Gity, Farzan / Corbett, Brian / Peters, Frank H. et al. | 2011
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100nm-gate-Iength In0.47Ga0.53As multi-gate MOSFET: fabrication and characterisationMo, J. J. / Wichmann, N. / Roelens, Y. / Zaknoune, M. / Desplanque, L. / Wallart, X. / Bollaert, S. et al. | 2011
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Narrow Linewidth 1.52 micrometer InAs/InP Quantum Dot DFB LasersPoole, P. J. / Lu, Z. G. / Liu, J. R. / Barrios, P. / Jiao, Z. J. / Poitras, D. / SpringThorpe, A. J. / Pakulski, G. / Goodchild, D. / Rioux, B. et al. | 2011
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Metal-cavity Nanolasers - Theory and ExperimentChuang, Shun Lien / Lu, Chien-Yao / Chang, Shu-Wei / Germann, Tim D. / Pohl, Udo W. / Bimberg, Dieter et al. | 2011
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Lasing Operation of Long-Wavelength Transistor Laser Using AGaInAs/InP Quantum Well Active RegionShirao, Mizuki / Sato, Takashi / Takino, Yuta / Sato, Noriaki / Nishiyama, Nobuhiko / Arai, Shigehisa et al. | 2011
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Integration of III/V lattice-matched on (001) Silicon for optoelectronicKunert, Bemardette / Volz, Kerstin / Stolz, Wolfgang et al. | 2011
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Time Resolved Measurement of Interface and Bulk Recombination of Solar Cell MaterialsSzabó, Nadine / Schwarzburg, Klaus / Dobrich, Anja / Hannappel, Thomas et al. | 2011
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Monolithic Flip-Chip Compatible Twin-IQ Mach-Zehnder Modulators for Hybrid Assembly onto High Capacity Optical Transmitter BoardsKaiser, R. / Velthaus, K. O. / Brast, T. / Maul, B. / Gruner, M. / Klein, H. / Hamacher, M. / Hoffmann, D. / Schell, M. et al. | 2011
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InP HBT Technology Activities in EuropeKonczykowska, Agnieszka et al. | 2011
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Self-Aligned Ohmic Contact Scheme to InGaAs Using Epitaxial Ge GrowthFirrincieli, Andrea / Vincent, B. / Waldron, N. / Simoen, E. / Claeys, C. / Kittl, J. et al. | 2011
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High Output Power (~400 f..lW) Oscillators at Around 550 GHz Using Large Area RTD and Optimized Antenna StructureShiraishi, M. / Shibayama, H. / Ishigaki, K. / Suzuki, S. / Asada, M. / Sugiyama, H. / Yokoyama, H. et al. | 2011
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Structural characterisation of GaP/Si nanolayersGuo, W. / Thanh, T. Nguyen / Elias, G. / Létoublon, A. / Cornet, C. / Ponchet, A. / Bondi, A. / Rohel, T. / Bertru, N. / Robert, C. et al. | 2011
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High-Speed and Low-Power Static Frequency Divider and Decision Circuit with 0.5-?m-emitter-width InP HBTsBouvier, Y. / Nagatani, M. / Sano, K. / Murata, K. / Kurishima, K. / Ida, M. et al. | 2011
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Carrier Injection in GaAsPN/GaPN Quantum Wells on SiliconCornet, C. / Robert, C. / Thanh, T. Nguyen / Guo, W. / Bondi, A. / Elias, G. / Létoublon, A. / Richard, S. / Burin, J.-P. / Perrin, M. et al. | 2011
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Narrow linewidth 1.55 micrometer laterally-coupled DFB lasers fabricated using nanoimprint lithographyTelkkälä, Jarkko / Viheriälä, Jukka / Bister, Mariia / Karinen, Jukka / Melanen, Petri / Dumitrescu, Mihail / Guina, Mircea et al. | 2011
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Positioned Growth and Spectroscopy of InP Nanowires Containing Single InAsP Quantum DotsPoole, P. J. / Dalacu, D. / Lapointe, J. / Mnaymneh, K. / Wu, X. et al. | 2011
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High-Speed InP-HEMTs: Low-Noise Performance and Cryogenic OperationEndoh, Akira / Watanabe, Issei / Mimura, Takashi / Matsui, Toshiaki et al. | 2011
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Self-aligned Metal S/D InP MOSFETs using Metallic Ni-InP alloysKim, S. H. / Yokoyama, M. / Taoka, N. / Iida, R. / Lee, S. / Nakane, R. / Urabe, Y. / Miyata, N. / Yasuda, T. / Yamada, H. et al. | 2011
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Two-bandgap semiconductor optical amplifier integrated using quantum well intermixingLee, Ko-Hsin / Webb, Roderick P. / Manning, Robert J. / Roycroft, Brendan / O’Callaghan, James / Peters, Frank H. / Corbett, Brian et al. | 2011
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Influence of self-heating on the impact-ionization gate leakage in AlInAs/InGaAs/InP HEMTsScavennec, André / Maher, Hassan / Decobert, Jean et al. | 2011
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Single Wavelength (Non-Grating) High-Mesa Asymmetric Active-MMI All Optical Bi-Stable Laser DiodesJiang, H. / Chaen, Y. / Hagio, T. / Tsuruda, K. / Jizodo, M. / Matsuo, S. / Hamamoto, K. et al. | 2011
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InP Lattice-matched HEMT with Regrown Source/Drain by MOCVDLi, Qiang / Li, Ming / Tang, Chak Wah / Lau, Kei May et al. | 2011
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Strain Effects on Performance of AlGaInAs/InP Single Quantum Well LasersSapkota, Durga Prasad / Kayastha, Madhu Sudan / Wakita, Koichi et al. | 2011
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Low-Cost 25Gb/s 1300nm Electroabsorption-Modulated InGaAlAs RW-DFB-LaserMoehrle, Martin / Przyrembel, Georges / Bornholdt, Carsten / Sigmund, Ariane / Molzow, Wolf-Dietrich / Klein, Holger et al. | 2011
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Metamorphic and Non-conventional 'Buffer' LayersKuech, T. F. / Jha, S. / Wiedmann, M. K. / Paulson, C. A. / Babcock, S. E. / Kuan, T. S. / Mawst, L. J. / Kirch, J. / Kimd, Tae Wan et al. | 2011
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The optoelectronic performance of axial and radial GaAs nanowire pn-diodesLysov, A. / Gutsche, C. / Offer, M. / Regolin, I. / Prost, W. / Tegude, F.-J. et al. | 2011
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Thermal Dissipation In InP Based Optical Lasers and AmplifiersJacquet, Joël / Faugeron, Mickael / Abner, Yannick / Choffla, Manish / Dijk, Frédéric Van / Brenot, Romain et al. | 2011
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Regrowth-Free Multi-Guide Vertical Integration in InP for Optical CommunicationsTolstikhin, Valery et al. | 2011
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Analysis and optimization by micro-beam X-ray diffraction of Al-GaInAs heterostructures obtained by Selective Area Growth for optoelectronic applicationsGuillamet, Ronan / Lagay, Nadine / Mocuta, Cristian / Carbone, Gerardina / Lagrée, Pierre-Yves / Decobert, Jean et al. | 2011
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Atomic ordering and decomposition of lattice matched InxGa1-xAsyP1-y on InP(001)Lenz, Andrea / Eisele, Holger / Genz, Florian / Franke, Dieter / Künzel, Harald / Pohl, Udo W. / Dähne, Mario et al. | 2011
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All-Optical Gating Operation in Hybrid Si/III-V Mach-Zehnder InterferometerShoji, Yuya / Akimoto, Ryoichi / Kintaka, Kenji / Suda, Satoshi / Kawashima, Hitoshi / Gozu, Shin-ichiro / Mozume, Teruo / Kuwatsuka, Haruhiko / Hasama, Toshifumi / Ishikawa, Hiroshi et al. | 2011
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Weak Emitter-Size Effect in InP/In0.37Ga0.63As0.89Sb0.11/In0.53Ga0.47As Double Heterojunction Bipolar TransistorsChang, Che-An / Chen, Shu-Han / Wang, Sheng-Yu / Chang, Chao-Min / Chyi, Jen-Inn et al. | 2011
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Pyramidal quantum dots: a versatile playground for quantum dot design and physicsPelucchi, E. / Dimastrodonato, V. / Mereni, L. O. / Juska, G. / Gocalinska, A. et al. | 2011
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Annealing-induced structural changes in TlInGaAsN heterostructures studied by X-ray photoelectron spectroscopyKim, K. M. / Kim, W. B. / Krishnamurthy, D. / Ishimaru, M. / Kobayashi, H. / Hasegawa, S. / Asahi, H. et al. | 2011
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Extended X-ray absorption fine structure of InAsPSbWu, Chen-Jun / Tsai, Gene / Feng, Zhe-Chuan / Lin, Hao-Hsiung et al. | 2011
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Ultra-Low Noise InP pHEMTs for Cryogenic Deep-Space and Radio- Astronomy ApplicationsAlt, A. R. / Bolognesi, C. R. / Gallego, J. D. / Diez, C. / Lopez-Fernandez, I. / Barcia, A. et al. | 2011
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Lateral Current Injection Distributed Feedback Laser with Wirelike Active RegionsShindo, Takahiko / Okumura, Tadashi / Futami, Mitsuaki / Osabe, Ryo / Ito, Hitomi / Koguchi, Takayuki / Amemiya, Tomohiro / Nishiyama, Nobuhiko / Arai, Shigehisa et al. | 2011
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Measurement of the Interface Specific Resistivity of a Heavily Doped n-Type InP/GaInAs HeterostructureHalevy, Ran / Cohen, Shimon / Gavrilov, Arkadi / Ritter, Dan et al. | 2011
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Waveguide AlInAs/GaInAs APD for 40Gb/s optical receiversLahrichi, M. / Glastre, G. / Paret, J.-F. / Carpentier, D. / Lanteri, D. / Lagay, N. / Decobert, J. / Achouche, M. et al. | 2011
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Effect of MOVPE Growth Conditions on The Formation of Self-Organized InAs/InGaAsP/InP Quantum DotsWenning, Felix / Kuenzel, Harald / Pohl, Udo W. et al. | 2011
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4 x 4 InAlGaAs/InAlAs optical switch fabric by cascading Mach-Zehnder interferometer-type optical switches with low-power and low-polarization-dependent operationUeda, Yuta / Koyama, Noriaki / Kambayashi, Kazuki / Fujimoto, Shinji / Utaka, Katsuyuki / Shiota, Takashi / Kitatani, Takeshi et al. | 2011
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Performance and Reliability Investigations of Waveguide-Integrated PhotodetectorsKroh, Marcel / Beling, Andreas / Trommer, Dirk / Margraf, Michael / Unterbörsch, Günter et al. | 2011
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InP-Based Self-Aligned Internally Series-Connected RTD/HBT for Threshold Gate ICsPark, Jaehong / Lee, Jongwon / Lee, Jooseok / Jeong, Yongsik / Yang, Kyounghoon et al. | 2011
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GHz-level Operation of a Compact RTD-based CNN Basic CellLee, Jongwon / Lee, Jooseok / Yang, Kyounghoon et al. | 2011
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Nanostructuring of InP by colloidal lithography and ICP etching for photovoltaic applicationsNaureen, Shagufta / Rajagembu, Perumal / Sanatinia, Reza / Shahid, Naeem / Li, Mingyu / Anand, Srinivasan et al. | 2011
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Single-Wavelength InGaAs/AlAs(Sb) Quantum Cascade LasersSlight, Thomas / Phelan, Richard / Revin, Dmitry / McKee, Andrew / Cockburn, John / Kelly, Brian / Ironside, Charles et al. | 2011
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High repetition rate two-section InAs/InP Quantum-Dash Passively Mode Locked LasersRosales, R. / Merghem, K. / Martinez, A. / Accard, A. / Lelarge, F. / Ramdane, A. et al. | 2011
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Current-injected Quantum-dot Microdisk Lasers Operating at Room TemperatureMao, M.-H. / Chien, H. C. / Hong, J. Z. et al. | 2011
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III-V on Silicon for High-Speed Electronics and CMOS PhotonicsTakenaka, Mitsuru / Takagi, Shinichi et al. | 2011
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Optical properties of wurtzite InAs/lnP core-shell nanowires grown on silicon substratesKhmissi, H. / Alouane, M. H. Hadj / Chauvin, N. / Naji, K. / Patriarche, G. / Ilahi, B. / Maaref, H. / Bru-Chevallier, C. / Gendry, M. et al. | 2011
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In situ characterization of III-V/Si(100) anti-phase disorderDoscher, Henning / Supplie, Oliver / Bruckner, Sebastian / Hannappel, Thomas et al. | 2011
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Novel concept for a Monolithically Integrated MEMS VCSELGruendl, Tobias / Nagel, Robin D. / Debernardi, Pierluigi / Geiger, Kathrin / Grasse, Christian / Hager, Thomas / Ortsiefer, Markus / Rosskopf, Jürgen / Boehm, Gerhard / Meyer, Ralf et al. | 2011
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Proposal and Numerical Analysis of Ultra-fast Optical Logic Devices with Integrated InAs QD-SOA and Ring ResonatoMatsumoto, A. / Kuwata, K. / Akahane, K. / Utaka, K. et al. | 2011
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Evidence for enhanced carrier escape from multiple stepped quantum well (MSQW) and its impact on photovoltaic performanceWen, Yu / Wang, Yunpeng / Sugiyama, Masakazu / Nakano, Yoshiaki et al. | 2011
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Improvement of Breakdown and DC-to-Pulse Dispersion Properties in Field-Plated InGaAs-InAlAs pHEMTsSaguatti, Davide / Isa, Muammar Mohamad / Ian, Ka Wa / Chini, Alessandro / Verzellesi, Giovanni / Fantini, Fausto / Missous, Mohamed et al. | 2011
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Photoluminescence peak wavelength behavior of InAs/InGaAsP/InP quantum dots structureFukuda, Ayako / Esaki, Miyuki / Akimoto, Mio / Imai, Hajime et al. | 2011
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Preliminary results of storage accelerated aging test on InP/GaAsSb DHBTKoné, G. A. / Ghosh, S. / Grandchamp, B. / Maneux, C. / Marc, F. / Labat, N. / Zimmer, T. / Maher, H. / Bourqui, M. L. / Smith, D. et al. | 2011
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Improvement of modal gain of InAs/InP Quantum-Dash LasersMerghem, K. / Rosales, R. / Martinez, A. / Patriarche, G. / Ramdane, A. / Chimot, N. / Dijk, F. van / Moustapha-Rabault, Y. / Poingt, F. / Lelarge, F. et al. | 2011
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Carrier-mediated ferromagnetism in InGaGdN grown by plasma-assisted molecular beam epitaxyTawil, S. N. M. / Zhou, Y. K. / Krishnamurthy, D. / Emura, S. / Hasegawa, S. / Asahi, H. et al. | 2011
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Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTsMorassi, Luca / Verzellesi, Giovanni / Larcher, Luca / Zhao, Han / Lee, Jack C. et al. | 2011
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Performance of InP-Based 90deg-Hybrids QPSK Receivers within C-BandZhang, R.-Y. / Janiak, K. / Bach, H.-G. / Kunkel, R. / Seeger, A. / Schubert, S. / Schell, M. / Matiss, A. / Umbach, A. et al. | 2011
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Demonstration of a 34 nm monolithic continuously tunable VCSEL at 1.55 micrometer combined with liquid crystalCastany, O. / Paranthoen, C. / Levallois, C. / Shuaib, A. / Gauthier, J. P. / Chevalier, N. / Durand, O. / Dupont, L. / Corre, A. Le et al. | 2011
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Strain Effects on Performances in InAs HEMTsMachida, F. / Nishino, H. / Sato, J. / Watanabe, H. / Hara, S. / Fujishiro, H. I. et al. | 2011
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Application of HICUM/L0 to InP DHBTs using single-transistor parameter extractionNardmann, Tobias / Lehmann, Steffen / Schröter, Michael / Driad, Rachid et al. | 2011
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Heteroepitaxial bonding of GaInAs quantum wells on Si: a new approach towards photonic integration on Si for devices operating at 1.55micrometerTalneau, A. / Chouteau, D. / Mauguin, O. / Largeau, L. / Sagnes, I. / Patriarche, G. et al. | 2011
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InGaAs/InP DHBTs demonstrating simultaneous ftau/fmax ~ 460/850 GHz in a refractory emitter processJain, Vibhor / Lobisser, Evan / Baraskar, Ashish / Thibeault, Brian J. / Rodwell, Mark J. W. / Urteaga, M. / Loubychev, D. / Snyder, A. / Wu, Y. / Fastenau, J. M. et al. | 2011
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Structural evaluation of GaAs1-xBix mixed crystals by TEMUeda, Osamu / Tominaga, Yoriko / Ikenaga, Noriaki / Yoshimoto, Masahiro / Oe, Kunishige et al. | 2011
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InGaAs MOS-HEMTs on Si Substrates Grown by MOCVDZhou, Xiuju / Tang, Chak Wah / Li, Qiang / Lau, Kei May et al. | 2011
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Low-power Consumption and High-eye-margin 10 Gbit/s Operation of Distributed Reflector Laser with Wirelike Active RegionsTakahashi, Daisuke / Lee, Seunghun / Shindo, Takahiko / Shinno, Keisuke / Amemiya, Tomohiro / Nishiyama, Nobuhiko / Arai, Shigehisa et al. | 2011
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1550 nm Flip-Chip Compatible Electroabsorption-Modulated Laser with 40 Gb/s modulation capabilityKreissl, Jochen / Bornholdt, Carsten / Gaertner, Tom / Moerl, Ludwig / Przyrembel, Georges / Rehbein, Wolfgang et al. | 2011
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Analysis of in situ reflectance spectra and performance of InGaAs/GaAsP quantum-well solar cells: towards a comprehensive understanding of strain accumulation influence on solar cell propertiesWang, Yunpeng / Wen, Yu / Sugiyama, Masakazu / Nakano, Yoshiaki et al. | 2011
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On the remarkable morphological organization of homoepitaxial MOVPE InP filmsGocalinska, A. / Manganaro, M. / Pelucchi, E. et al. | 2011
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Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High Indium Composition Transit LayersTeranishi, A. / Shizuno, K. / Suzuki, S. / Asada, M. / Sugiyama, H. / Yokoyama, H. et al. | 2011
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Strain control using GaxIn1-xAs second cap layer during double-cap procedure in InAs / InP QDs structureHirooka, M. / Kawashima, F. / Iwane, Y. / Saegusa, T. / Shimomura, K. et al. | 2011
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Single mode TEM00 large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrateLaurain, A. / Michon, A. / Garnache, A. / Beaudoin, G. / Roblin, C. / Cambril, E. / Sagnes, I. et al. | 2011
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X-ray diffraction characterization of polycrystalline InP films grown by molecular-beam deposition: Estimation of stacking-fault probabilityKajikawa, Y. / Iseki, Y. / Matsui, Y. et al. | 2011
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Low-Threshold 3 micrometer GaInAsSb/AlGaInAsSb Quantum-Well Lasers Operating in Continuous-Wave up to 64 deg CVizbaras, Kristijonas / Andrejew, Alexander / Vizbaras, Augustinas / Grasse, Christian / Arafin, Shamsul / Amann, Markus-Christian et al. | 2011
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InAs/InGaAsP Quantum Dots Emitting at 1.5 micrometer for Applications in LasersSemenova, E. S. / Kulkova, I. V. / Kadkhodazadeh, S. / Schubert, M. / Dunin-Borkowski, R. E. / Yvind, K. et al. | 2011
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Injection Velocity in Thin-Channel InAs HEMTsKim, Tae-Woo / Alamo, Jesús A. del et al. | 2011
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MOVPE preparation and in situ spectroscopy of Si(100) substrates for III-V heteroepitaxyBruckner, Sebastian / Döscher, Henning / Dobrich, Anja / Supplie, Oliver / Kleinschmidt, Peter / Hannappel, Thomas et al. | 2011
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25-Gb/s Multi-channel 1.3-micrometer Surface-emitting LaserAdachi, K. / Shinoda, K. / Kitatani, T. / Matsuoka, Y. / Sugawara, T. / Tsuji, S. et al. | 2011
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Hybrid Photonic Integration of InP-Based Laser Diodes and Polymer PLCsSoares, F. M. / Zhang, Z. / Przyrembel, G. / Lauermann, M. / Moehrle, M. / Zawadzki, C. / Zittermann, B. / Keil, N. / Grote, N. et al. | 2011
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High Current Gain of Doping-Graded GaAsSb/lnP DHBTsWu, Bing-Ruey / Dvorak, Martin W. / Colbus, Patrick / Low, Tom S. / D'Avanzo, Don et al. | 2011
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High Speed InP/InGaAs Uni-Traveling-Carrier Photodiodes with Dipole-Doped InGaAs/InP Absorber-Collector InterfaceWang, H. / Mao, S. et al. | 2011
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Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectricMorassi, Luca / Verzellesi, Giovanni / Pavan, Paolo / Veksler, Dmitry / Ok, Injo / Zhao, Han / Lee, Jack C. / Bersuker, Gennadi et al. | 2011
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High Performance Submicron RTD Design for mm-Wave Oscillator ApplicationsKamgaing, A. Tchegho / Muenstermann, B. / Geitmann, R. / Benner, O. / Blekker, K. / Prost, W. / Tegude, F. J. et al. | 2011
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A Compact High-Speed RTD-based Reconfigurable Logic GateLee, Jooseok / Lee, Jongwon / Yang, Kyounghoon et al. | 2011
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8-channel AWG-based multiwavelength laser fabricated in a multi-project wafer runLawniczuk, K. / Piramidowicz, R. / Szczepanski, P. / Williams, P. J. / Wale, M. J. / Smit, M. K. / Leijtens, X. J. M. et al. | 2011
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InP HBTs for THz Frequency Integrated CircuitsUrteaga, M. / Seo, M. / Hacker, J. / Griffith, Z. / Young, A. / Pierson, R. / Rowell, P. / Skalare, A. / Jain, V. / Lobisser, E. et al. | 2011
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Nanoimprint lithography for photonic devicesNiemi, Tapio et al. | 2011
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80deg C Continuous Wave Operation of Photonic-Crystal Nanocavity LasersTakeda, Koji / Sato, Tomonari / Shinya, Akihiko / Nozaki, Kengo / Chen, Chin-Hui / Kawaguchi, Yoshihiro / Taniyama, Hideaki / Notomi, Masaya / Matsuo, Shinji et al. | 2011
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III-V CMOS: What have we learned from HEMTs?Alamo, Jesús A. del / Kim, Dae-Hyun / Kim, Tae-Woo / Jin, Donghyun / Antoniadis, Dimitri A. et al. | 2011
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Reduction of source parasitic capacitance in vertical InGaAs MISFETMatsumoto, Yutaka / Saito, Hisashi / Miyamoto, Yasuyuki et al. | 2011
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Refractive index contributions to phase shifting in InP based 30 GHz bandwidth n-i-n Mach-Zehnder ModulatorsO'Callaghan, James R. / Roycroft, Brendan / Guo, Wei-Hua / Lu, Q. Y. / Daunt, Chris / Donegan, John / Peters, Frank H. / Corbett, Brian et al. | 2011
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Design Improvements for InP-Based 90deg-Hybrid OEICs for 100GE Coherent FrontendsKunkel, R. / Ortega-Moñux, A. / Bach, H.-G. / Zhang, R. / Hoffmann, D. / Schmidt, D. / Schell, M. / Romero-García, S. / Molina-Fernandez, I. / Halir, R. et al. | 2011
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Characterization of thin film resistors and capacitors integrated on GaAs membranes for submillimeter wave circuit applicationsZhao, Huan / Do, Thanh Ngoc Thi / Sobis, Peter / Tang, Aik-Yean / Yhland, Klas / Stenarson, Jörgen / Stake, Jan et al. | 2011
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FT-DLTS studies on deep levels in InAs quantum dashes grown on InPZouaoui, Mouna / Regreny, Philippe / Ajjel, Ridha / Girard, Philippe / Gendry, Michel / Bremond, Georges et al. | 2011