Study of electro‐optic effect in asymmetrically ramped AlInGaAs multiple quantum well structures (English)
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In:
physica status solidi (a)
;
213
, 4
;
930-935
;
2016
- Article (Journal) / Electronic Resource
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Title:Study of electro‐optic effect in asymmetrically ramped AlInGaAs multiple quantum well structures
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Contributors:Sadiq, Muhammad Usman ( author ) / O'Callaghan, James ( author ) / Roycroft, Brendan ( author ) / Thomas, Kevin ( author ) / Pelucchi, Emanuele ( author ) / Peters, Frank H. ( author ) / Corbett, Brian ( author )
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Published in:physica status solidi (a) ; 213, 4 ; 930-935
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Publisher:
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Publication date:2016-04-01
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Size:6 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 213, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 841
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Preparation and characterization of methylammonium tin iodide layers as photovoltaic absorbers (Phys. Status Solidi A 4∕2016)Weiss, Manuel / Horn, Jonas / Richter, Christoph / Schlettwein, Derck et al. | 2016
- 975
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Preparation and characterization of methylammonium tin iodide layers as photovoltaic absorbersWeiss, Manuel / Horn, Jonas / Richter, Christoph / Schlettwein, Derck et al. | 2016
- 842
-
Issue Information| 2016
- 843
-
Contents| 2016
- 849
-
Recent and forthcoming publications in pss| 2016
- 850
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Compound Semiconductors| 2016
- 851
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Growth and impurity characterization of AlN on (0001) sapphire grown by spatially pulsed MOCVDChung, Roy B. / Rodak, Lee E. / Enck, Ryan W. / Sampath, Anand V. / Wraback, Michael / Reed, Meredith L. et al. | 2016
- 856
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Uniform growth of III‐nitrides on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactorSu, Jie / Armour, Eric / Lee, Soo Min / Arif, Ronald / Papasouliotis, George D. et al. | 2016
- 861
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Toward reliable MIS‐ and MOS‐gate structures for GaN lateral power devicesChen, Kevin J. / Yang, Shu / Liu, Shenghou / Liu, Cheng / Hua, Mengyuan et al. | 2016
- 868
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Off‐state drain leakage reduction by post metallization annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on SiJiang, Huaxing / Lu, Xing / Liu, Chao / Li, Qiang / Lau, Kei May et al. | 2016
- 873
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Above 2000 V breakdown voltage at 600 K GaN‐on‐silicon high electron mobility transistorsHerbecq, Nicolas / Roch‐Jeune, Isabelle / Linge, Astrid / Zegaoui, Malek / Jeannin, Pierre‐Olivier / Rouger, Nicolas / Medjdoub, Farid et al. | 2016
- 878
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High breakdown voltage p–n diodes on GaN on sapphire by MOCVDGupta, Chirag / Enatsu, Yuuki / Gupta, Geetak / Keller, Stacia / Mishra, Umesh K. et al. | 2016
- 883
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Direct observation of nanometer‐scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structuresKotani, Junji / Yamada, Atsushi / Ishiguro, Tetsuro / Tomabechi, Shuichi / Nakamura, Norikazu et al. | 2016
- 889
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GaN HEMTs with quaternary In0.05Al0.75Ga0.2N Schottky barrier layerHwang, Ji Hyun / Kim, Se‐Mi / Woo, Jeong Min / Hong, Sung‐Min / Jang, Jae‐Hyung et al. | 2016
- 893
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Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate processTadjer, Marko J. / Anderson, Travis J. / Feygelson, Tatyana I. / Hobart, Karl D. / Hite, Jennifer K. / Koehler, Andrew D. / Wheeler, Virginia D. / Pate, Bradford B. / Eddy, Charles R. Jr. / Kub, Fritz J. et al. | 2016
- 898
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Atomistic study of band structure and transport in extremely thin channel InP MOSFETsDutta, Tapas / Kumar, Piyush / Rastogi, Priyank / Agarwal, Amit / Chauhan, Yogesh Singh et al. | 2016
- 905
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Performance projection of III‐nitride heterojunction nanowire tunneling field‐effect transistorsLi, Wenjun / Cao, Lina / Lund, Cory / Keller, Stacia / Fay, Patrick et al. | 2016
- 909
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SciFab –a wafer‐level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm‐wave applicationsWeimann, Nils G. / Stoppel, Dimitri / Schukfeh, Muhammed I. / Hossain, Maruf / Al‐Sawaf, Thualfiqar / Janke, Bernd / Doerner, Ralf / Sinha, Siddharta / Schmückle, Franz‐Josef / Krüger, Olaf et al. | 2016
- 917
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Development of technological building blocks for the monolithic integration of ammonia‐MBE‐grown GaN‐HEMTs with silicon CMOSComyn, Rémi / Cordier, Yvon / Chenot, Sébastien / Jaouad, Abdelatif / Maher, Hassan / Aimez, Vincent et al. | 2016
- 925
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Charge‐layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodesKleinow, P. / Rutz, F. / Aidam, R. / Bronner, W. / Heussen, H. / Walther, M. et al. | 2016
- 930
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Study of electro‐optic effect in asymmetrically ramped AlInGaAs multiple quantum well structuresSadiq, Muhammad Usman / O'Callaghan, James / Roycroft, Brendan / Thomas, Kevin / Pelucchi, Emanuele / Peters, Frank H. / Corbett, Brian et al. | 2016
- 936
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InGaN/GaN core/shell nanowires for visible to ultraviolet range photodetectionZhang, Hezhi / Messanvi, Agnès / Durand, Christophe / Eymery, Joël / Lavenus, Pierre / Babichev, Andrey / Julien, François H. / Tchernycheva, Maria et al. | 2016
- 941
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Analysis of luminescent coupling effects in n series‐connected multijunction solar cellsMazouchi, Mojgan / Jia, Jieyang / Huo, Yijie / Miao, Yu / Kang, Yangsen / Chen, Yusi / Harris, James S. / Dutta, Mitra et al. | 2016
- 947
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Effect of quantum well shape and width on deep ultraviolet emission in AlGaN nanowire LEDsSarwar, A. T. M. Golam / May, Brelon J. / Myers, Roberto C. et al. | 2016
- 953
-
Estimation of roughness‐induced scattering losses in III‐nitride laser diodes with a photoelectrochemically etched current apertureMegalini, Ludovico / Shenoy, Renuka / Rose, Kenneth / Speck, James P. / Bowers, John E. / Nakamura, Shuji / Cohen, Daniel A. / DenBaars, Steven P. et al. | 2016
- 958
-
InAs/GaAs quantum dot lasers with GaP strain‐compensation layers grown by molecular beam epitaxyKageyama, Takeo / Watanabe, Katsuyuki / Vo, Quoc Huy / Takemasa, Keizo / Sugawara, Mitsuru / Iwamoto, Satoshi / Arakawa, Yasuhiko et al. | 2016
- 965
-
Q factor improvement by capsule‐shaped metallic cavity structure for subwavelength lasersZhang, Baifu / Chieda, Koh / Okimoto, Takuya / Tanemura, Takuo / Nakano, Yoshiaki et al. | 2016
- 970
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56 Gb/s L‐band InGaAlAs ridge waveguide electroabsorption modulated laser with integrated SOATheurer, M. / Przyrembel, G. / Sigmund, A. / Molzow, W.‐D. / Troppenz, U. / Möhrle, M. et al. | 2016
- 982
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Fabrication of graphene‐based 3D structures by stereolithographyKorhonen, Harri / Sinh, Le Hoang / Luong, Nguyen Dang / Lehtinen, Pekka / Verho, Tuukka / Partanen, Jouni / Seppälä, Jukka et al. | 2016
- 986
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Improvement of thermoelectric performance of [alpha]-In2Se3 upon S incorporationZhiliang Song et al. | 2016
- 986
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Improvement of thermoelectric performance of α‐In2Se3 upon S incorporationSong, Zhiliang / Liu, Haiyun / Du, Zhengliang / Liu, Xianglian / Cui, Jiaolin et al. | 2016
- 994
-
Flower‐like TiO2 with highly exposed {001} facets used as scattering layers for dye‐sensitized solar cellsGan, Wei / Niu, Haihong / Shang, Xin / Zhou, Ru / Guo, Zhiqiang / Mao, Xiaoli / Wan, Lei / Xu, Jinzhang / Miao, Shiding et al. | 2016
- 1002
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Synthesis of wide bandgap Ga2O3 (Eg ∼ 4.6–4.7 eV) thin films on sapphire by low pressure chemical vapor depositionRafique, Subrina / Han, Lu / Zhao, Hongping et al. | 2016
- 1010
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Effects of silicon doping on the performance of tin oxide thin film transistorsYang, Jianwen / Yang, Zhao / Meng, Ting / Han, Yanbing / Wang, Xiaotian / Zhang, Qun et al. | 2016
- 1016
-
CrSi(O,N)‐based cermet‐like material for high‐ohmic thin film resistor applicationsVinzelberg, Hartmut / Schumann, Joachim et al. | 2016
- 1025
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Length‐dependent broadband electric properties of PMMA composites filled with carbon nanotubesKranauskaite, Ieva / Macutkevic, Jan / Banys, Juras / Kuznetsov, Vladimir L. / Moseenkov, Sergey I. / Rudyna, Nina A. / Krasnikov, Dmitriy V. et al. | 2016
- 1034
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Improved Schottky contacts to InGaN alloys by a photoelectrochemical treatmentTang, Yin / Cai, Qing / Yang, Lianhong / Xue, Junjun / Chen, Dunjun / Lu, Hai / Zhang, Rong / Zheng, Youdou et al. | 2016
- 1039
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Source and effects of sodium in solution‐processed kesterite solar cellsAbzieher, Tobias / Schnabel, Thomas / Hetterich, Michael / Powalla, Michael / Ahlswede, Erik et al. | 2016
- 1050
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A hybrid memristor‐CMOS XOR gate for nonvolatile logic computationZhou, Yaxiong / Li, Yi / Xu, Lei / Zhong, Shujing / Xu, Ronggang / Miao, Xiangshui et al. | 2016
- 1055
-
Transmission electron microscopy study for investigating high‐temperature reliability of Ti10 W90‐based and Ta‐based diffusion barriers up to 600°CBudhiman, Nando / Schürmann, Ulrich / Jensen, Björn / Chemnitz, Steffen / Kienle, Lorenz / Wagner, Bernhard et al. | 2016
- 1063
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Optical vortex pulse illumination to create chiral monocrystalline silicon nanostructuresTakahashi, Fuyuto / Takizawa, Shun / Hidai, Hirofumi / Miyamoto, Katsuhiko / Morita, Ryuji / Omatsu, Takashige et al. | 2016
- 1069
-
Commercial alumina templates as base to fabricate 123‐type high‐Tc superconductor nanowiresKoblischka, M. R. / Zeng, X. L. / Hartmann, U. et al. | 2016
- 1077
-
Influence of BaO–CaO–SiO2 on dielectric properties and reliability of BaTiO3‐based ceramicsZhao, Qiancheng / Gong, Huiling / Wang, Xiaohui / Luo, Bingcheng / Li, Longtu et al. | 2016
- 1082
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Light‐controlled resistive switching in laser‐assisted annealed Ba0.8Sr0.2TiO3 thin filmsSilva, J. P. B. / Kamakshi, Koppole / Sekhar, K. C. / Moreira, J. Agostinho / Almeida, A. / Pereira, M. / Gomes, M. J. M. et al. | 2016
- 1088
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Thermoelectric enhancement in the two‐dimensional electron gas of AlGaN/GaN heterostructuresNagase, Kazuya / Takado, Shinya / Nakahara, Ken et al. | 2016
- 1093
-
Information for authors| 2016
- 1096
-
Estimation of roughness‐induced scattering losses in III‐nitride laser diodes with a photoelectrochemically etched current aperture (Phys. Status Solidi A 4∕2016)Megalini, Ludovico / Shenoy, Renuka / Rose, Kenneth / Speck, James P. / Bowers, John E. / Nakamura, Shuji / Cohen, Daniel A. / DenBaars, Steven P. et al. | 2016