MOCVD regrowth of InGaN on N‐polar and Ga‐polar pillar and stripe nanostructures (English)
- New search for: Fichtenbaum, N. A.
- New search for: Neufeld, C. J.
- New search for: Schaake, C.
- New search for: Wu, Y.
- New search for: Wong, M. H.
- New search for: Grundmann, M.
- New search for: Keller, S.
- New search for: DenBaars, S. P.
- New search for: Speck, J. S.
- New search for: Mishra, U. K.
- New search for: Fichtenbaum, N. A.
- New search for: Neufeld, C. J.
- New search for: Schaake, C.
- New search for: Wu, Y.
- New search for: Wong, M. H.
- New search for: Grundmann, M.
- New search for: Keller, S.
- New search for: DenBaars, S. P.
- New search for: Speck, J. S.
- New search for: Mishra, U. K.
In:
physica status solidi (b)
;
244
, 6
;
1802-1805
;
2007
- Article (Journal) / Electronic Resource
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Title:MOCVD regrowth of InGaN on N‐polar and Ga‐polar pillar and stripe nanostructures
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Contributors:Fichtenbaum, N. A. ( author ) / Neufeld, C. J. ( author ) / Schaake, C. ( author ) / Wu, Y. ( author ) / Wong, M. H. ( author ) / Grundmann, M. ( author ) / Keller, S. ( author ) / DenBaars, S. P. ( author ) / Speck, J. S. ( author ) / Mishra, U. K. ( author )
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Published in:physica status solidi (b) ; 244, 6 ; 1802-1805
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Publisher:
- New search for: WILEY‐VCH Verlag
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Publication date:2007-06-01
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Size:4 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 244, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1759
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Recent developments in the III‐nitride materialsMonemar, B. / Paskov, P. P. / Bergman, J. P. / Toropov, A. A. / Shubina, T. V. et al. | 2007
- 1769
-
Structural transition control of laterally overgrown c‐GaN and h‐GaN on stripe‐patterned GaAs (001) substrates by MOVPESanorpim, S. / Takuma, E. / Ichinose, H. / Katayama, R. / Onabe, K. et al. | 2007
- 1775
-
Crystallographic polarity and crystallinity characterization of polar and nonpolar GaN epitaxial films by X‐ray diffraction analysesInaba, Katsuhiko / Amano, Hiroshi et al. | 2007
- 1780
-
Development of natural habit of large free‐nucleated AlN single crystalsEpelbaum, B. M. / Nagata, S. / Bickermann, M. / Heimann, P. / Winnacker, A. et al. | 2007
- 1784
-
Numerical study of the relationship between growth condition and atomic arrangement of InGaNKangawa, Y. / Kakimoto, K. / Ito, T. / Koukitu, A. et al. | 2007
- 1789
-
Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow‐rate modulation epitaxyKobayashi, Y. / Nakamura, T. / Akasaka, T. / Makimoto, T. / Matsumoto, N. et al. | 2007
- 1793
-
Fabrication and characterization of nano‐porous GaN template for strain relaxed GaN growthHartono, H. / Soh, C. B. / Chua, S. J. / Fitzgerald, E. A. et al. | 2007
- 1797
-
Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wellsKeller, S. / Fichtenbaum, N. A. / Schaake, C. / Neufeld, C. J. / David, A. / Matioli, E. / Wu, Y. / DenBaars, S. P. / Speck, J. S. / Weisbuch, C. et al. | 2007
- 1802
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MOCVD regrowth of InGaN on N‐polar and Ga‐polar pillar and stripe nanostructuresFichtenbaum, N. A. / Neufeld, C. J. / Schaake, C. / Wu, Y. / Wong, M. H. / Grundmann, M. / Keller, S. / DenBaars, S. P. / Speck, J. S. / Mishra, U. K. et al. | 2007
- 1806
-
On the way to InGaN quantum dots embedded into monolithic nitride cavitiesSebald, K. / Lohmeyer, H. / Gutowski, J. / Yamaguchi, T. / Kruse, C. / Hommel, D. / Wiersig, J. / Jahnke, F. et al. | 2007
- 1810
-
Epitaxial growth of aligned GaN nanowires and nanobridgesKim, Kyungkon / Henry, Tania / Cui, George / Han, Jung / Song, Yoon‐Kyu / Nurmikko, Arto V. / Tang, Hong et al. | 2007
- 1815
-
Selective growth of GaN nanocolumns by Al thin layer on substrateIshizawa, Shunsuke / Sekiguchi, Hiroto / Kikuchi, Akihiko / Kishino, Katsumi et al. | 2007
- 1820
-
p‐type InN and In‐rich InGaNAger, J. W. III / Jones, R. E. / Yamaguchi, D. M. / Yu, K. M. / Walukiewicz, W. / Li, S. X. / Haller, E. E. / Lu, H. / Schaff, W. J. et al. | 2007
- 1825
-
Role of localized donor states in transport and photoluminescence of InN revealed by hydrostatic pressure studiesSuski, T. / Kamińska, A. / Franssen, G. / Teisseyre, H. / Dmowski, L. H. / Plesiewicz, J. A. / Lu, H. L. / Schaff, W. J. / Kurouchi, M. / Nanishi, Y. et al. | 2007
- 1829
-
High efficient terahertz emission from InN surfacesCimalla, Volker / Pradarutti, Boris / Matthäus, Gabor / Brückner, Claudia / Riehemann, Stefan / Notni, Gunther / Nolte, Stefan / Tünnermann, Andreas / Lebedev, Vadim / Ambacher, Oliver et al. | 2007
- 1834
-
Thermal and chemical stabilities of In‐ and N‐polar InN surfacesNaoi, H. / Muto, D. / Hioka, T. / Hayakawa, Y. / Suzuki, A. / Araki, T. / Nanishi, Y. et al. | 2007
- 1839
-
Optical polarization anisotropies in GaN films for different nonpolar orientationsGrahn, Holger T. et al. | 2007
- 1848
-
Reduction in defect density over whole area of (1UEQN LOC="INLINE" NOTAT="TEX"> \bar 1 00) m -plane GaN using one-sidewall seeded epitaxial lateral overgrowthKawashima, T. et al. | 2007
- 1848
-
Reduction in defect density over whole area of (1$ \bar 1 $00) m ‐plane GaN using one‐sidewall seeded epitaxial lateral overgrowthKawashima, T. / Nagai, T. / Iida, D. / Miura, A. / Okadome, Y. / Tsuchiya, Y. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. et al. | 2007
- 1853
-
Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaNKojima, Kazunobu / Ueda, Masaya / Funato, Mitsuru / Kawakami, Yoichi et al. | 2007
- 1857
-
Strain of single edge dislocations in bulk GaNGmeinwieser, Nikolaus / Schwarz, Ulrich T. et al. | 2007
- 1862
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First‐principles calculation and X‐ray absorption fine structure analysis of Fe doping mechanism for semi‐insulating GaN growth on GaAs substratesTogashi, R. / Satoh, F. / Murakami, H. / Iihara, J. / Yamaguchi, K. / Kumagai, Y. / Koukitu, A. et al. | 2007
- 1867
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Comparison of deep level spectra in p‐type and n‐type GaN grown by molecular beam epitaxyArmstrong, A. / Poblenz, C. / Mishra, U. K. / Speck, J. S. / Ringel, S. A. et al. | 2007
- 1872
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Preparation of extended microtunnels in GaN by wet chemical etchingHuang, Hsin‐Hsiung / Zeng, Hung‐Yu / Lee, Wei‐I et al. | 2007
- 1877
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Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructuresUmana‐Membreno, G. A. / Parish, G. / Nener, B. D. / Buttari, D. / Keller, S. / Mishra, U. K. et al. | 2007
- 1882
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From evidence of strong light–matter coupling to polariton emission in GaN microcavitiesSellers, I. R. / Semond, F. / Zamfirescu, M. / Stokker‐Cheregi, F. / Disseix, P. / Leroux, M. / Leymarie, J. / Gurioli, M. / Vinattieri, A. / Réveret, F. et al. | 2007
- 1887
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Calorimetric study and Landau analysis of the phase transitions in PbZr1–xSnxO3 single crystals with 0 ≤ x ≤ 0.4Jankowska‐Sumara, Irena et al. | 2007
- 1887
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Calorimetric study and Landau analysis of the phase transitions in PbZr1-x Snx O3 single crystals with 0 x <= 0.4Jankowska-Sumara, I. et al. | 2007
- 1895
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Phonon spectrum of compact ceramics: two‐dimensional ordered modelSalamatov, E. I. et al. | 2007
- 1900
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Phase transitions in the two‐dimensional Falicov–Kimball model on the triangular latticeČenčariková, Hana / Farkašovský, Pavol et al. | 2007
- 1908
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Elastic instability of slip traces in oxidized thin foilsYoussef, Sami / Fnaiech, Mustapha / Bonnet, Roland et al. | 2007
- 1913
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Surface melting of close‐packed Mg(0001), compared with Al(111)Yang, Jianyu / Hu, Wangyu / Xiao, Shifang / Yi, Guojun et al. | 2007
- 1925
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Elastic and piezoelectric fields in quantum wire semiconductor structures – A boundary integral equation analysisPan, E. / Albrecht, J. D. / Zhang, Y. et al. | 2007
- 1940
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A moving screw dislocation interacting with an imperfect piezoelectric bimaterial interfaceWang, X. / Pan, E. et al. | 2007
- 1957
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Stability and band gaps of InGaAs, BGaAs, and BInGaAs alloys: Density‐functional supercell calculationsJenichen, Arndt / Engler, Cornelia et al. | 2007
- 1964
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Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wellsDuque, C. A. / López, S. Y. / Mora‐Ramos, M. E. et al. | 2007
- 1964
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Hydrostatic pressure effects on the G-X conduction band mixing and the binding energy of a donor impurity in GaAs-Ga1-x Alx As quantum wellsDuque, C. A. / Lopez, S. Y. / Mora-Ramos, M. E. et al. | 2007
- 1971
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Electronic structure and magnetic properties of Fe3C with 3d and 4d impuritiesShein, I. R. / Medvedeva, N. I. / Ivanovskii, A. L. et al. | 2007
- 1982
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A new set of electronegativity scale for trivalent lanthanidesLi, Keyan / Xue, Dongfeng et al. | 2007
- 1988
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Electronic structure calculations of europium chalcogenides EuS and EuSeRached, D. / Ameri, M. / Rabah, M. / Khenata, R. / Bouhemadou, A. / Benkhettou, N. / Dine el Hannani, M. et al. | 2007
- 1997
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Study on the local structure and the spin‐Hamiltonian parameters for Cu3+ ions in Al2O3 crystalWei, Qun / Yang, Zi‐Yuan / Xu, Qi‐Ming et al. | 2007
- 2002
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Analytical approach to the impurity scattering in quantum wellsAbramov, A. / Akimov, V. / Tulupenko, V. / Fomina, O. / Ryzhkov, V. et al. | 2007
- 2010
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Symmetry of electron states in semiconductor structures under a magnetic fieldTronc, P. / Smirnov, V. P. et al. | 2007
- 2022
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The on‐shell self‐energy of the uniform electron gas in its weak‐correlation limitZiesche, P. et al. | 2007
- 2037
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Electrical properties of polycrystalline TiO2 at elevated temperatures. Electrical conductivityNowotny, J. / Bak, T. / Burg, T. et al. | 2007
- 2037
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Electrical properties of polycrystalline TiO2 at elevated temperatures. Electrical conductivityFNR HREF="fn1">FN ID="fn1">This project was performed as part of UNSW R&D program on solar-hydrogen.Nowotny, J. et al. | 2007
- 2055
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An analysis of the resonant tunneling‐time based on the presence‐time formalismdel Barco, O. et al. | 2007
- 2064
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Tunneling time of electronic wave packet through a parabolic quantum well with double barrierGong, J. / Liang, X. X. / Ban, S. L. et al. | 2007
- 2072
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Interaction of spatially separated oxygen–vacancy centers in CaF2 crystals due to an excitation‐induced short‐time molecular bondPologrudov, V. V. / Penzina, E. E. / Kheder, K. K. et al. | 2007
- 2081
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Scaling analysis of field‐enhanced bandtail hopping transport in amorphous carbon nitrideGodet, C. / Kleider, J. P. / Gudovskikh, A. S. et al. | 2007
- 2100
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Diffusion thermopower of a p‐type Si/Si1–xGex heterostructure at zero magnetic fieldHuan, Tran Doan / Hai, Nguyen Phuc et al. | 2007
- 2109
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Thermal quenching of luminescence and isovalent trap model for rare‐earth‐ion‐doped AlNLozykowski, H. J. / Jadwisienczak, W. M. et al. | 2007
- 2127
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Compositional dependence of optical and vibrational properties of strontium barium niobate (SrxBa1–xNb2O6)David, C. / Tunyagi, A. / Betzler, K. / Wöhlecke, M. et al. | 2007
- 2138
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Absorbance kinetics of dye‐doped systems with photochemical first order kineticsRupp, Romano A. / Yao, Baoli / Zheng, Yuan / Menke, Neimule / Wang, Yingli / Dong, Weibin / Zhao, Wei / Chen, Yi / Fan, Meigong / Xu, Jinjun et al. | 2007
- 2151
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Visible‐spectroscopy study of the low dimensional (C2H5NH3)2CuCl4 compound in the region of its low temperature phase transitionsKapustianyk, V. / Rudyk, V. / Partyka, M. et al. | 2007
- 2159
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Polarized far infrared magnetoplasmon reflectivity of doped CdxMn1–xTe semimagnetic semiconductor in the Voigt configurationShayesteh, S. Farjami / Hidari, M. et al. | 2007
- 2166
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Third‐order optical nonlinearity of azobenzene side‐chain polymer thin filmHe, Tingchao / Cheng, Yongguang / Wang, Changshun / Jia, Tingjian / Li, Pengwei / Mo, Yujun et al. | 2007
- 2172
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Luminescence from europium, europium–chromium, erbium, samarium and terbium‐activated powder, ceramic and polycrystalline cubic boron nitrideShishonok, E. M. / Leonchik, S. V. / Steeds, J. W. et al. | 2007
- 2180
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Exciton and antisite defect‐related luminescence in Lu3Al5O12 and Y3Al5O12 garnetsZorenko, Yu. / Voloshinovskii, A. / Savchyn, V. / Voznyak, T. / Nikl, M. / Nejezchleb, K. / Mikhailin, V. / Kolobanov, V. / Spassky, D. et al. | 2007
- 2190
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Cr-site preference of BaFe12-x Crx O19 hexaferrite ceramics monitored by Mossbauer spectroscopyOunnunkad, S. / Phanichphant, S. / Winotai, P. / Tang, I. M. et al. | 2007
- 2190
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Cr‐site preference of BaFe12–xCrxO19 hexaferrite ceramics monitored by Mössbauer spectroscopyOunnunkad, Suriya / Phanichphant, Sukon / Winotai, Pongtip / Tang, I‐Ming et al. | 2007
- 2199
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Comment on “ESR study of Sr‐doped LaCoO3 cobaltites” [phys. stat. sol. (b) 242, No. 7, 1522–1527 (2005)]Rozenberg, E. et al. | 2007
- 2202
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Transport and magnetic properties of the diluted magnetic semiconductors Sb1.98–xV0.02Crx Te3 and Sb1.984–yV0.016Mny Te3Drašar, Č. / Kašparová, J. / Lošˇták, P. / Shi, X. / Uher, C. et al. | 2007
- 2210
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Excitation of dimensional resonances of magnetoelastic and elastic waves in bilayered structureGareeva, Z. V. / Doroshenko, R. A. et al. | 2007
- 2217
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Quantum fluctuation and the magnetically structural symmetry in ferrimagnetic superlatticesQiu, Rong‐ke / Zhang, Zhi‐dong et al. | 2007
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Magnetic ordering of Mn and Ru in (La0.52Ba0.48) (Mn0.51Ru0.49)O3Wu, S. Y. / Li, W.‐H. / Yang, C. C. / Lynn, J. W. / Liu, R. S. et al. | 2007
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Influence of substrates on the statical and dynamical properties of ferroelectric thin filmsWesselinowa, J. M. / Dimitrov, Al. B. et al. | 2007
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Impedance characteristics of Pb(Fe2/3W1/3)O3–BiFeO3 compositesChoudhary, R. N. P. / Pradhan, Dillip K. / Tirado, C. M. / Bonilla, G. E. / Katiyar, R. S. et al. | 2007
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Effect of simultaneous substitution of Li+ and Ti4+ in ceramics of Pb2KNb5O15 on structure, dielectric, modulus, impedance and conductivity propertiesSambasiva Rao, K. / Murali Krishna, P. / Madhava Prasad, D. et al. | 2007
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Defect structure of ZrO2‐doped rare earth perovskite scintillatorsStanek, C. R. / Levy, M. R. / McClellan, K. J. / Uberuaga, B. P. / Grimes, R. W. et al. | 2007