Most accessed Early View articles (English)
In:
physica status solidi (a)
;
207
, 6
;
1276
;
2010
- Article (Journal) / Electronic Resource
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Title:Most accessed Early View articles
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Published in:physica status solidi (a) ; 207, 6 ; 1276
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Publisher:
- New search for: WILEY‐VCH Verlag
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Publication date:2010-06-01
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Size:1 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 207, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Contents: (Phys. Status Solidi A 6/2010)| 2010
- 1276
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Most accessed Early View articles| 2010
- 1277
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Growth and characterization of free‐standing zinc‐blende GaN layers and substratesNovikov, S. V. / Foxon, C. T. / Kent, A. J. et al. | 2010
- 1283
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Growth of GaN crystals by Na flux LPE methodMori, Y. / Kitaoka, Y. / Imade, M. / Kawamura, F. / Miyoshi, N. / Yoshimura, M. / Sasaki, T. et al. | 2010
- 1287
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Fabrication of freestanding 2″‐GaN wafers by hydride vapour phase epitaxy and self‐separation during cooldownLipski, Frank / Wunderer, Thomas / Schwaiger, Stephan / Scholz, Ferdinand et al. | 2010
- 1292
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AlN synthesis on AlN/SiC template using Li–Al–N solventKangawa, Yoshihiro / Kakimoto, Koichi et al. | 2010
- 1295
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Structural characterization of thick (1122) GaN layers grown by HVPE on m‐plane sapphireUsikov, Alexander / Soukhoveev, Vitali / Shapovalov, Lisa / Syrkin, Alexander / Ivantsov, Vladimir / Scanlan, Bernard / Nikiforov, Alexey / Strittmatter, Andre / Johnson, Noble / Zheng, Jian‐Guo et al. | 2010
- 1299
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Defects in highly Mg‐doped AlNNonaka, Kentaro / Asai, Toshiaki / Nagamatsu, Kentaro / Iwaya, Motoaki / Kamiyama, Satoshi / Amano, Hiroshi / Akasaki, Isamu et al. | 2010
- 1302
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Growth and electron microscopy study of GaN/MgAl2O4 heterostructuresLi, Guoqiang / Shih, Shao‐Ju / Fu, Li et al. | 2010
- 1305
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Various misfit dislocations in green and yellow GaInN/GaN light emitting diodesZhu, Mingwei / You, Shi / Detchprohm, Theeradetch / Paskova, Tanya / Preble, Edward A. / Wetzel, Christian et al. | 2010
- 1309
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Optical gain and gain saturation of blue‐green InGaN quantum wellsSizov, Dmitry / Bhat, Rajaram / Napierala, Jerome / Gallinat, Chad / Song, Kechang / Allen, Donald / Zah, Chung‐en et al. | 2010
- 1313
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Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma‐assisted molecular beam epitaxy on c‐Al2O3Jmerik, V. N. / Mizerov, A. M. / Shubina, T. V. / Toropov, A. A. / Belyaev, K. G. / Sitnikova, A. A. / Yagovkina, M. A. / Kop'ev, P. S. / Lutsenko, E. V. / Danilchyk, A. V. et al. | 2010
- 1318
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True green InGaN laser diodesLutgen, Stephan / Avramescu, Adrian / Lermer, Teresa / Queren, Desiree / Müller, Jens / Bruederl, Georg / Strauss, Uwe et al. | 2010
- 1323
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GaN/AlN quantum disc single‐nanowire photodetectorsRigutti, L. / Tchernycheva, M. / Bugallo, A. De Luna / Jacopin, G. / Julien, F. H. / Songmuang, R. / Monroy, E. / Chou, S. T. / Lin, Y. T. / Tseng, P. H. et al. | 2010
- 1328
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Waveguide design of green InGaN laser diodesLermer, Teresa / Schillgalies, Marc / Breidenassel, Andreas / Queren, Désirée / Eichler, Christoph / Avramescu, Adrian / Müller, Jens / Scheibenzuber, Wolfgang / Schwarz, Ulrich / Lutgen, Stephan et al. | 2010
- 1332
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Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopyWang, Maojun / Cheng, Chung Choi / Beling, Chris D. / Fung, Stevenson / Chen, Kevin J. et al. | 2010
- 1335
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Determination of the valence band offsets at HfO2/InN(0001) and InN/In0.3Ga0.7N(0001) heterojunctions using X‐ray photoelectron spectroscopyEisenhardt, Anja / Knübel, Andreas / Schmidt, Ralf / Himmerlich, Marcel / Wagner, Joachim / Schaefer, Juergen A. / Krischok, Stefan et al. | 2010
- 1338
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Structural properties of MBE AlInN and AlGaInN barrier layers for GaN‐HEMT structuresKirste, Lutz / Lim, Taek / Aidam, Rolf / Müller, Stefan / Waltereit, Patrick / Ambacher, Oliver et al. | 2010
- 1342
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Impact of gate dielectric thickness on the electrical properties of AlGaN/GaN MISHFETs on Si(111) substrateEickelkamp, Martin / Fahle, Dirk / Lindner, Johannes / Heuken, Michael / Lautensack, Christian / Kalisch, Holger / Jansen, Rolf H. / Vescan, Andrei et al. | 2010
- 1345
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Stress test measurements of lattice‐matched InAlN/AlN/GaN HFET structuresLeach, Jacob H. / Wu, Mo / Ni, Xianfeng / Li, Xing / Özgür, Ümit / Morkoç, Hadis / Liberis, Juozas / Šermukšnis, Emilis / Matulionis, Arvydas / Cheng, Hailing et al. | 2010
- 1348
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AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter‐wave applicationsGuo, Shiping / Gao, Xiang / Gorka, Daniel / Chung, Jinwoork W. / Wang, Han / Palacios, Tomas / Crespo, Antonio / Gillespie, James K. / Chabak, Kelson / Trejo, Manuel et al. | 2010
- 1353
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Impact of n‐type doping on the terahertz surface emission from c‐plane InNPolyakov, V. M. / Cimalla, V. / Lebedev, V. / Schwierz, F. et al. | 2010
- 1356
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Optical polarization anisotropy of nonpolar InN epilayersWang, K. / Yamaguchi, T. / Takeda, A. / Kimura, T. / Kawashima, K. / Araki, T. / Nanishi, Y. et al. | 2010
- 1361
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Facet formation for laser diodes on nonpolar and semipolar GaNRass, Jens / Wernicke, Tim / Kremzow, Raimund / John, Wilfred / Einfeldt, Sven / Vogt, Patrick / Weyers, Markus / Kneissl, Michael et al. | 2010
- 1365
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MBE growth of cubic AlN on 3C‐SiC substrateSchupp, Thorsten / Rossbach, Georg / Schley, Pascal / Goldhahn, Rüdiger / Röppischer, Marcus / Esser, Norbert / Cobet, Christoph / Lischka, Klaus / As, Donat Josef et al. | 2010
- 1369
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In‐clustering effects in InAlN and InGaN revealed by high pressure studiesGorczyca, I. / Suski, T. / Kamińska, A. / Staszczak, G. / Schenk, H. P. D. / Christensen, N. E. / Svane, A. et al. | 2010
- 1372
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A growth model of cubic GaN microstripes grown by MOVPE: Vapour phase diffusion model including surface migration effectsSukkaew, Pitsiri / Sanorpim, Sakuntam / Onabe, Kentaro et al. | 2010
- 1375
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Selectivity enhancement by hydrogen addition in selective area metal‐organic vapor phase epitaxy of GaN and InGaNShioda, Tomonari / Sugiyama, Masakazu / Shimogaki, Yukihiro / Nakano, Yoshiaki et al. | 2010
- 1379
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The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVDDurkaya, G. / Buegler, M. / Atalay, R. / Senevirathna, I. / Alevli, M. / Hitzemann, O. / Kaiser, M. / Kirste, R. / Hoffmann, A. / Dietz, N. et al. | 2010
- 1383
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Laterally overgrown GaN/InGaN multi‐quantum well heterostructures: Electrical and optical propertiesPolyakov, Alexander / Govorkov, Anatoliy / Smirnov, Nikolay / Markov, Alexander / Lee, In‐Hwan / Ahn, Haeng‐Keun / Karpov, Sergey / Pearton, Stephen et al. | 2010
- 1386
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Growth of InGaN/GaN light emitting diodes by MOCVD with a thin tapered reactor cellIso, Kenji / Takaki, Ryohei / Ishihama, Yoshiyasu / Inagawa, Tomokazu / Takahashi, Yuzuru et al. | 2010
- 1389
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InGaN‐based 518 and 488 nm laser diodes on c‐plane GaN substrateMiyoshi, Takashi / Masui, Shingo / Okada, Takeshi / Yanamoto, Tomoya / Kozaki, Tokuya / Nagahama, Shin‐ichi / Mukai, Takashi et al. | 2010
- 1393
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High‐output‐power AlGaN/GaN ultraviolet‐light‐emitting diodes by activation of Mg‐doped p‐type AlGaN in oxygen ambientNagata, Kengo / Ichikawa, Tomoki / Takeda, Kenichiro / Nagamatsu, Kentaro / Iwaya, Motoaki / Kamiyama, Satoshi / Amano, Hiroshi / Akasaki, Isamu et al. | 2010
- 1397
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Electroluminescence properties of Eu‐doped GaN‐based red light‐emitting diode by OMVPENishikawa, Atsushi / Kawasaki, Takashi / Furukawa, Naoki / Terai, Yoshikazu / Fujiwara, Yasufumi et al. | 2010
- 1400
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Stress relaxed nanoepitaxy GaN for growth of phosphor‐free indium‐rich nanostructures incorporated in apple‐white LEDsSoh, C. B. / Liu, W. / Chua, S. J. / Ang, N. S. S. / Yong, A. M. / Lai, S. C. / Teng, J. H. et al. | 2010
- 1404
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Fabrication of blue and green non‐polar InGaN/GaN multiple quantum well light‐emitting diodes on LiAlO2(100) substratesLiu, Bin / Han, Ping / Xie, Zili / Zhang, Rong / Liu, Chengxiang / Xiu, Xiangqian / Hua, Xuemei / Lu, Hai / Chen, Peng / Zheng, Youdou et al. | 2010
- 1407
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GaInN‐based LED structures on selectively grown semi‐polar crystal facetsScholz, Ferdinand / Wunderer, Thomas / Feneberg, Martin / Thonke, Klaus / Chuvilin, Andrei / Kaiser, Ute / Metzner, Sebastian / Bertram, Frank / Christen, Jürgen et al. | 2010
- 1414
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Degradation mechanism of light‐emitting diodes on patterned sapphire substrateKim, Sei‐Min / Moon, Young‐Boo / Park, Il‐Kyu / Jang, Ja‐Soon et al. | 2010
- 1418
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MOVPE growth and optical characterization of InGaAsN T‐shaped quantum wires lattice‐matched to GaAsKlangtakai, Pawinee / Sanorpim, Sakuntam / Katayama, Ryuji / Onabe, Kentaro et al. | 2010
- 1421
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GaN/AlGaN nanostructures for intersubband optoelectronicsTchernycheva, M. / Macchadani, H. / Nevou, L. / Mangeney, J. / Julien, F. H. / Kandaswamy, P. K. / Wirthmüller, A. / Monroy, E. / Vardi, A. / Schacham, S. et al. | 2010
- 1425
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GaN‐based nanowires: From nanometric‐scale characterization to light emitting diodesBavencove, A.‐L. / Tourbot, G. / Pougeoise, E. / Garcia, J. / Gilet, P. / Levy, F. / André, B. / Feuillet, G. / Gayral, B. / Daudin, B. et al. | 2010
- 1428
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Electroluminescence from isolated single indium gallium nitride quantum dots up to 150 KKalden, J. / Tessarek, C. / Sebald, K. / Figge, S. / Kruse, C. / Hommel, D. / Gutowski, J. et al. | 2010
- 1431
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Theoretical investigations of polytypism in AlN thin filmsIto, Tomonori / Ito, Takumi / Ammi, Daisuke / Akiyama, Toru / Nakamura, Kohji et al. | 2010
- 1437
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Transparent semiconducting oxides: materials and devicesGrundmann, Marius / Frenzel, Heiko / Lajn, Alexander / Lorenz, Michael / Schein, Friedrich / von Wenckstern, Holger et al. | 2010
- 1450
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Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for productionAidam, Rolf / Waltereit, Patrick / Kirste, Lutz / Dammann, Michael / Quay, Rüdiger et al. | 2010
- 1455
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Frontispiece| 2010
- 1456
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Superconducting and microstructural properties of Mg1−xAgxB2Singh, Kiran / Mohan, Rajneesh / Kumar, Naresh / Bhattacharya, Shovit / Rayaprol, Sudhindra / Gaur, N. K. / Singh, Ram K. et al. | 2010
- 1460
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Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient studyGarino, Yiuri / Teraji, Tokuyuki / Koizumi, Satoshi / Koide, Yasuo / Ito, Toshimichi et al. | 2010
- 1464
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Structural, optical, and electrical properties of n‐ZnO/p‐GaAs heterojunctionTekmen, Süleyman / Gür, Emre / Asıl, Hatice / Çınar, Kübra / Coşkun, Cevdet / Tüzemen, Sebahattin et al. | 2010
- 1468
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Spectroscopic properties of Yb3+‐doped Ca4Gd0.5Y0.5O(BO3)3 single crystalsZhang, Yan / Wei, Bo / Wang, Guofu et al. | 2010
- 1474
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Polarization dependences of absorption and luminescence spectra on each crystal face of α‐quaterthiophene and α‐quinquethiopheneTanaka, Shin / Katano, Yoshitaka / Kimura, Yuki / Yoshinari, Takehisa / Nagasaka, Shin‐ichiro / Itoh, Hiroki / Kuriyama, Yasunao et al. | 2010
- 1481
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Phase stability and magnetic properties of the Heusler alloy Mn2CuAl ribbonsFeng, Z. Q. / Luo, H. Z. / Wang, Y. X. / Li, Y. X. / Zhu, W. / Wu, G. H. / Meng, F. B. et al. | 2010
- 1485
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Room temperature magnetoresistance of La0.7Ca0.2Ba0.1MnO3/Ag thin filmsKuru, Y. / Habermeier, H.‐U. / Tripathi, R. / Awana, V. P. S. / Kishan, H. et al. | 2010
- 1489
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Effect of deep‐level states on current–voltage characteristics and electroluminescence of blue and UV light‐emitting diodesNana, R. / Gnanachchelvi, P. / Awaah, M. A. / Gowda, M. H. / Kamto, A. M. / Wang, Y. / Park, M. / Das, K. et al. | 2010
- 1497
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Thermal analysis and characterization of the effect of substrate thinning on the peformances of GaN‐based light emitting diodesLee, H. K. / Yu, J. S. / Lee, Y. T. et al. | 2010
- 1505
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Effect of buffer thickness on DC and microwave performance of AlGaN/GaN heterojunction field‐effect transistorsChevtchenko, Serguei A. / Brunner, Frank / Würfl, Joachim / Tränkle, Günther et al. | 2010
- 1509
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Minority carrier injection limited current in Re/4H‐SiC Schottky diodesSarpatwari, K. / Mohney, S. E. / Ashok, S. / Awadelkarim, O. O. et al. | 2010
- 1514
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Information for authors| 2010
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Back Cover (Phys. Status Solidi A 6/2010)Mori, Y. / Kitaoka, Y. / Imade, M. / Kawamura, F. / Miyoshi, N. / Yoshimura, M. / Sasaki, T. et al. | 2010
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Front Cover (Phys. Status Solidi A 6/2010)Grundmann, Marius / Frenzel, Heiko / Lajn, Alexander / Lorenz, Michael / Schein, Friedrich / von Wenckstern, Holger et al. | 2010