Characterization of High‐k Dielectric Internal Structure by X‐Ray Spectroscopy and Reflectometry: New Approaches to Interlayer Identification and Analysis (English)
- New search for: Filatova, Elena O.
- New search for: Sokolov, Andrey A.
- New search for: Kozhevnikov, Igor V.
- New search for: He, Gang
- New search for: Sun, Zhaoqi
- New search for: Filatova, Elena O.
- New search for: Sokolov, Andrey A.
- New search for: Kozhevnikov, Igor V.
In:
High‐k Gate Dielectrics for CMOS Technology
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225-271
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2012
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ISBN:
- Article/Chapter (Book) / Electronic Resource
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Title:Characterization of High‐k Dielectric Internal Structure by X‐Ray Spectroscopy and Reflectometry: New Approaches to Interlayer Identification and Analysis
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Contributors:He, Gang ( editor ) / Sun, Zhaoqi ( editor ) / Filatova, Elena O. ( author ) / Sokolov, Andrey A. ( author ) / Kozhevnikov, Igor V. ( author )
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Published in:
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Publisher:
- New search for: Wiley‐VCH Verlag GmbH & Co. KGaA
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Place of publication:Weinheim, Germany
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Publication date:2012-08-22
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Size:47 pages
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ISBN:
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DOI:
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Type of media:Article/Chapter (Book)
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Type of material:Electronic Resource
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Language:English
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Keywords:titanium dioxide , complementary metal oxide semiconductor devices , aluminum oxide , hard X‐ray photoelectron spectroscopy , soft X‐ray reflectometry , metal oxides , high‐resolution transmission electron microscopy , high‐k dielectrics , hafnium dioxide , depth distribution of atomic concentration , metallic titanium
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Source:
Table of contents eBook
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Scaling and Limitation of Si‐Based CMOSHe, Gang / Sun, Zhaoqi / Liu, Mao / Zhang, Lide et al. | 2012
- 31
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Issues in High‐k Gate Dielectrics and its Stack InterfacesLu, Hong‐Liang / Zhang, David Wei et al. | 2012
- 61
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UV Engineering of High‐k Thin FilmsBoyd, Ian W. et al. | 2012
- 77
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Atomic Layer Deposition Process of Hf‐Based High‐k Gate Dielectric Film on Si SubstratePark, Tae Joo / Cho, Moonju / Jung, Hyung‐Suk / Hwang, Cheol Seong et al. | 2012
- 111
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Structural and Electrical Characteristics of Alternative High‐k Dielectrics for CMOS ApplicationsChiu, Fu‐Chien / Mondal, Somnath / Pan, Tung‐Ming et al. | 2012
- 185
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Hygroscopic Tolerance and Permittivity Enhancement of Lanthanum Oxide (La2O3) for High‐k Gate InsulatorsZhao, Yi et al. | 2012
- 225
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Characterization of High‐k Dielectric Internal Structure by X‐Ray Spectroscopy and Reflectometry: New Approaches to Interlayer Identification and AnalysisFilatova, Elena O. / Sokolov, Andrey A. / Kozhevnikov, Igor V. et al. | 2012
- 273
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High‐k Insulating Films on Semiconductors and Metals: General Trends in Electron Band AlignmentAfanas'ev, Valeri V. / Houssa, Michel / Stesmans, Andre et al. | 2012
- 293
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Interface Engineering in the High‐k Dielectric Gate StacksWang, Shijie / Feng, Yuanping / Huan, Alfred C. H. et al. | 2012
- 319
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Interfacial Dipole Effects on High‐k Gate StacksZhu, Li Qiang et al. | 2012
- 355
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Metal Gate Electrode for Advanced CMOS ApplicationWang, Wenwu / Wang, Xiaolei / Han, Kai et al. | 2012
- 379
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Metal Gate/High‐k CMOS Evolution from Si to Ge PlatformAchin, Albert et al. | 2012
- 407
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Theoretical Progress on GaAs (001) Surface and GaAs/High‐k InterfaceWang, Weichao / Xiong, Ka / Wallace, Robert M. / Cho, Kyeongjae et al. | 2012
- 433
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III–V MOSFETs with ALD High‐k Gate DielectricsLee, Jack C. / Zhao, Han et al. | 2012
- 471
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High‐k Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory ApplicationsLu, Xubing et al. | 2012
- 501
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Rare‐Earth Oxides as High‐k Gate Dielectrics for Advanced Device ArchitecturesLee, Pooi See / Chan, Mei Yin / Damarwan, Peter et al. | 2012
- 531
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The Interaction Challenges with Novel Materials in Developing High‐Performance and Low‐Leakage High‐k/Metal Gate CMOS TransistorsChudzik, Michael / Krishnan, Siddarth / Kwon, Unoh / Khare, Mukesh / Narayanan, Vijay / Ando, Takashi / Cartier, Ed / Bu, Huiming / Paruchuri, Vamsi et al. | 2012
- 557
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Index| 2012
- I
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Front Matter| 2012