Dynamics of the phonon‐induced electron transfer between semiconductor bulk and surface states (English)
- New search for: Zeiser, Andreas
- New search for: Bücking, Norbert
- New search for: Götte, Jörg
- New search for: Förstner, Jens
- New search for: Hahn, Patrick
- New search for: Schmidt, Wolf Gero
- New search for: Knorr, Andreas
- New search for: Zeiser, Andreas
- New search for: Bücking, Norbert
- New search for: Götte, Jörg
- New search for: Förstner, Jens
- New search for: Hahn, Patrick
- New search for: Schmidt, Wolf Gero
- New search for: Knorr, Andreas
In:
physica status solidi (b)
;
241
, 12
;
R60-R62
;
2004
- Article (Journal) / Electronic Resource
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Title:Dynamics of the phonon‐induced electron transfer between semiconductor bulk and surface states
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Contributors:Zeiser, Andreas ( author ) / Bücking, Norbert ( author ) / Götte, Jörg ( author ) / Förstner, Jens ( author ) / Hahn, Patrick ( author ) / Schmidt, Wolf Gero ( author ) / Knorr, Andreas ( author )
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Published in:physica status solidi (b) ; 241, 12 ; R60-R62
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Publisher:
- New search for: WILEY‐VCH Verlag
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Publication date:2004-10-01
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Size:3 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 241, Issue 12
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2643
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Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructuresRuterana, P. / Singh, P. / Kret, S. / Jurczak, G. / Maciejewski, G. / Dluzewski, P. / Cho, H. K. / Choi, R. J. / Lee, H. J. / Suh, E. K. et al. | 2004
- 2649
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José Roberto Leite (1942–2004)Fazzio, Adalberto / Canuto, Sylvio / Lischka, Klaus / Stutzmann, Martin et al. | 2004
- 2651
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11th International Conference on Phonon Scattering in Condensed Matter (Phonons 2004), St. Petersburg, Russia, 25–30 July 2004Kent, A. J. et al. | 2004
- 2655
-
11th International Conference on High‐Pressure Semiconductor Physics (HPSP‐11), Berkeley, USA, 2–5 August 2004Cardona, M. et al. | 2004
- 2659
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Novel cladding structure for ZnSe‐based white LEDs with longer lifetime over 10,000 hoursNakamura, T. / Katayama, K. / Mori, H. / Fujiwara, S. et al. | 2004
- 2664
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Study on the stability of the high‐brightness white LEDChen, Z. Z. / Zhao, J. / Qin, Z. X. / Hu, X. D. / Yu, T. J. / Tong, Y. Z. / Yang, Z. J. / Zhou, X. Y. / Yao, G. Q. / Zhang, B. et al. | 2004
- 2668
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Carrier injection and light emission in visible and UV nitride LEDs by modelingKarpov, S. Yu. / Bulashevich, K. A. / Zhmakin, I. A. / Nestoklon, V. O. / Mymrin, V. F. / Makarov, Yu. N. et al. | 2004
- 2672
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Efficient conversion of blue light into white light by means of rare‐earth‐ion‐doped transparent materialMita, Y. / Kobayashi, Takeshi / Miyamoto, Yoshinobu / Ishii, Osamu / Sawanobori, Naruhito et al. | 2004
- 2676
-
Optically pumped lasing and gain formation properties in blue Inx Ga1–x N MQWsKojima, K. / Shikanai, A. / Omae, K. / Funato, M. / Kawakami, Y. / Narukawa, Y. / Mukai, T. / Fujita, Sg. et al. | 2004
- 2681
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Thermal analysis of GaN‐based LEDs using the finite element method and unit temperature profile approachLee, Tae Hee / Kim, Lan / Hwang, Woong Joon / Lee, C. C. / Shin, Moo Whan et al. | 2004
- 2685
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Growth of bulk GaN on GaN/sapphire templates by a high N2 pressure methodBoćkowski, M. / Grzegory, I. / Łucznik, B. / Krukowski, S. / Wróblewski, M. / Kwiatkowski, P. / Jasik, K. / Wawer, W. / Borysiuk, J. / Kamler, G. et al. | 2004
- 2689
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Structural analysis of thick GaN films grown by hydride vapour phase epitaxyRuterana, Pierre / Chen, Jun / Nouet, Gérard / Lei, Benliang / Ye, Haohua / Yu, Guanghui / Qi, Ming / Li, Aizhen et al. | 2004
- 2693
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Photoluminescence and Raman scattering in Mg and P co‐implanted GaN epitaxial layersLiu, K. T. / Su, Y. K. / Chang, S. J. / Onomitsu, K. / Horikoshi, Y. et al. | 2004
- 2698
-
High‐quality GaN films grown on Si(111) by a reversed Stranski–Krastanov growth modeChen, N. C. / Shih, C. F. / Chang, C. A. / Chiu, A. P. / Teng, S. D. / Liu, K. S. et al. | 2004
- 2703
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Photo‐induced absorption change for InGaN film by violet laser diodeNomura, Masahiro / Arita, Munetaka / Ashihara, Satoshi / Nishioka, Masao / Arakawa, Yasuhiko / Shimura, Tsutomu / Kuroda, Kazuo et al. | 2004
- 2708
-
Eu concentration dependence on structural and optical properties of Eu‐doped GaNBang, Hyungjin / Morishima, Shinichi / Tsukamoto, Takaharu / Li, Zhiqiang / Sawahata, Junji / Seo, Jongwon / Takiguchi, Mikio / Bando, Yoshio / Akimoto, Katsuhiro et al. | 2004
- 2713
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Efficiency enhancement of InGaN/GaN light‐emitting diodes utilizing island‐like GaN substrateHsu, J. T. / Tsay, J. D. / Guo, Y. D. / Chuo, C. C. / Pan, S. M. et al. | 2004
- 2717
-
Cathodoluminescence of polycrystalline GaN grown by a hot wall epitaxy techniqueInoue, Y. / Hoshino, T. / Takeda, S. / Ishida, A. / Fujiyasu, H. / Kominami, H. / Mimura, H. / Nakanishi, Y. / Sakakibara, S. et al. | 2004
- 2722
-
The effects of strained sapphire (0001) substrate on the structural quality of GaN epilayerCho, Yong Suk / Kim, Jeakyun / Park, Young Ju / Na, Hyunseok / Kim, Hee Jin / Kim, Hyun Jin / Yoon, Euijoon / Kim, Young Woon et al. | 2004
- 2726
-
The influence of aluminum composition of AlxGa1–xAs in distributed Bragg reflector on surface morphologyKim, B. / Yoon, M. / Kim, S. / Son, J. / Jhin, J. / Byun, D. et al. | 2004
- 2730
-
Spatially resolved cathodoluminescence study on AlGaN layer fabricated by air‐bridged lateral epitaxial growthIshibashi, Akihiko / Kawaguchi, Yasutoshi / Sugahara, Gaku / Shimamoto, Toshitaka / Yokogawa, Toshiya / Yamada, Yoichi / Ueki, Yusuke / Nakamura, Kohzo / Taguchi, Tsunemasa et al. | 2004
- 2739
-
Highly luminescent cubic GaN microcrystals grown on GaAs(001) substrates by RF‐MBEKatayama, Ryuji / Onabe, Kentaro / Shiraki, Yasuhiro et al. | 2004
- 2744
-
Quantum chemical study on substituent effect of gas‐phase reactions in III–V nitride semiconductor crystal growthOkada, Takanobu / Doi, Kentaro / Nakamura, Koichi / Tachibana, Akitomo et al. | 2004
- 2749
-
Built‐in electric field at cubic GaN/GaAs(001) heterointerfaces investigated by phase‐selected photoreflectance excitationKatayama, Ryuji / Onabe, Kentaro / Shiraki, Yasuhiro et al. | 2004
- 2754
-
Stimulated emission from GaN nanocolumnsKikuchi, Akihiko / Yamano, Kouji / Tada, Makoto / Kishino, Katsumi et al. | 2004
- 2759
-
Impurity band in magnesium‐doped GaN layers grown by metalorganic chemical vapor depositionKang, D. S. / Cheong, M. G. / Lee, S.‐K. / Suh, E.‐K. / Hong, C.‐H. / Lee, H. J. et al. | 2004
- 2763
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Direct heteroepitaxial lateral overgrowth of GaN on stripe‐patterned sapphire substrates with very thin SiO2 masksCheong, H. S. / Yoo, M. K. / Kim, H. G. / Bae, S. J. / Kim, C. S. / Hong, C.‐H. / Baek, J. H. / Kim, H. J. / Yu, Y. M. / Cho, H. K. et al. | 2004
- 2767
-
White light emitting silicon nanocrystals as nanophosphorLee, Soojin / Cho, Woon Jo / Han, Il Ki / Choi, Won Jun / Lee, Jung Il et al. | 2004
- 2771
-
Metal/GaN reaction chemistry and their electrical propertiesKim, C. C. / Seol, S. K. / Kim, J. K. / Lee, J.‐L. / Hwu, Y. / Ruterana, P. / Magaritondo, G. / Je, J. H. et al. | 2004
- 2775
-
Gallium nitride nanowires with a metal initiated metal‐organic chemical vapor deposition (MOCVD) approachLee, Sang‐Kwon / Choi, Heon‐Jin / Pauzauskie, Peter / Yang, Peidong / Cho, Nam‐Kyu / Park, Hyo‐Derk / Suh, Eun‐Kyung / Lim, Kee‐Young / Lee, Hyung‐Jae et al. | 2004
- 2779
-
Nontrivial carrier recombination dynamics and optical properties of over‐excited GaN/AlN quantum dotsKalliakos, S. / Bretagnon, T. / Lefebvre, P. / Juillaguet, S. / Taliercio, T. / Guillet, T. / Gil, B. / Grandjean, N. / Damilano, B. / Dussaigne, A. et al. | 2004
- 2783
-
Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift‐offYu, Tongjun / Li, Zilan / Qin, Z. X. / Chen, Z. Z. / Yang, Z. J. / Hu, X. D. / Zhang, G. Y. et al. | 2004
- 2787
-
Structural and optical properties of rare‐earth doped quantum dots grown by plasma‐assisted MBEHori, Y. / Andreev, T. / Jalabert, D. / Biquard, X. / Monroy, E. / Tanaka, M. / Oda, O. / Dang, Le Si / Daudin, B. et al. | 2004
- 2791
-
Optical characterization of InAsN single quantum wells grown by RF‐MBEKuroda, M. / Katayama, R. / Onabe, K. / Shiraki, Y. et al. | 2004
- 2795
-
Polarization properties of nonpolar GaN films and (In,Ga)N/GaN multiple quantum wellsGrahn, H. T. et al. | 2004
- 2802
-
Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxyKim, Hwa‐Mok / Lee, Hosang / Kim, Suk Il / Ryu, Sung Ryong / Kang, Tae Won / Chung, Kwan Soo et al. | 2004
- 2806
-
First‐principle study on electronic properties of gallium nitride and aluminium nitride nanowiresDoi, Kentaro / Higashimaki, Nobuyuki / Kawakami, Yoshihiko / Nakamura, Koichi / Tachibana, Akitomo et al. | 2004
- 2811
-
Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopyKim, J. S. / Kim, E. K. / Kim, H. J. / Yoon, E. / Park, I.‐W. / Park, Y. J. et al. | 2004
- 2816
-
Emission properties and thermal annealing of InGaN/GaN multiple quantum wells with different protection layersCho, H. K. / Park, T. E. / Kim, D. C. / Shin, J. E. / Lee, J. S. et al. | 2004
- 2820
-
Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaNYan, J. / Kappers, M. J. / Crossley, A. / McAleese, C. / Phillips, W. A. / Humphreys, C. J. et al. | 2004
- 2825
-
MBE growth of Zn‐polar ZnO on MOCVD‐ZnO templatesKato, Hiroyuki / Sano, Michihiro / Miyamoto, Kazuhiro / Yao, Takafumi / Zhang, Bao‐Ping / Wakatsuki, Katsuki / Segawa, Yusaburo et al. | 2004
- 2830
-
Optical and electrical properties of ZnO doped with nitrogenKang, Seungmo / Shin, Kyoungchul / Prabakar, Kandasamy / Lee, Chongmu et al. | 2004
- 2835
-
Polarity control of ZnO films grown with high temperature N‐polar GaN intermediate layers by plasma‐assisted molecular beam epitaxyRoh, O. H. / Tomita, Y. / Ohsugi, M. / Wang, X. / Ishitani, Y. / Yoshikawa, A. et al. | 2004
- 2839
-
Epitaxial growth of hexagonal and cubic InN filmsNishida, K. / Kitamura, Y. / Hijikata, Y. / Yaguchi, H. / Yoshida, S. et al. | 2004
- 2843
-
Growth and properties of In‐rich InGaN films grown on (0001) sapphire by RF‐MBEKurouchi, M. / Araki, T. / Naoi, H. / Yamaguchi, T. / Suzuki, A. / Nanishi, Y. et al. | 2004
- 2849
-
Properties of the fundamental absorption edge of InN crystals investigated by optical reflection and transmission spectraIshitani, Y. / Xu, K. / Che, S. B. / Masuyama, H. / Terashima, W. / Yoshitani, M. / Hashimoto, N. / Akasaka, K. / Ohkubo, T. / Yoshikawa, A. et al. | 2004
- 2854
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Magnetic properties of GaMnN grown via molecular beam epitaxy using a single precursorLee, K. J. / Kim, K. H. / Yu, F. C. / Im, W. S. / Gao, C. X. / Kim, D. J. / Kim, H. J. / Ihm, Y. E. et al. | 2004
- 2858
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A study of magnetic clusters in Co‐doped ZnO using neutron scatteringLee, Hyeon‐Jun / Ryu, Gi‐Hun / Kim, Sung‐Kyu / Kim, Shin Ae / Lee, Chang‐Hee / Jeong, Se‐Young / Cho, Chae Ryong et al. | 2004
- 2862
-
Electron beam induced light emission from the polythiophene derivative/ITO structurePanin, Gennady N. / Kang, Tae Won / Lee, Haiwon et al. | 2004
- R57
-
Dielectric and optical studies of phase transitions in [(CH3)2NH2]5Cd2CuCl11 crystalElyashevskyy, Yu. / Dacko, S. / Kosturek, B. / Czapla, Z. / Kapustyanik, V. B. et al. | 2004
- R60
-
Dynamics of the phonon‐induced electron transfer between semiconductor bulk and surface statesZeiser, Andreas / Bücking, Norbert / Götte, Jörg / Förstner, Jens / Hahn, Patrick / Schmidt, Wolf Gero / Knorr, Andreas et al. | 2004
- R63
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Raman spectroscopy with UV excitation on untwinned single crystals of YBa2Cu3O7–δBahrs, S. / Reich, S. / Zwick, A. / Goñi, A. R. / Bacsa, W. / Nieva, G. / Thomsen, C. et al. | 2004
- R63
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Raman spectroscopy with UV excitation on untwinned single crystals of YBa~2Cu~3O~7~-~d~e~l~t~aBahrs, S. / Reich, S. / Zwick, A. / Goni, A. R. / Bacsa, W. / Nieva, G. / Thomsen, C. et al. | 2004
- R67
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Low‐frequency vibrational modes of viruses used for nanoelectronic self‐assembliesFonoberov, Vladimir A. / Balandin, Alexander A. et al. | 2004