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The effects of surface treatments on the Pt/n-GaAs Schottky interface
National licenceElsevier | 1981| -
Removal of the high‐resistivity layer at the n on n+ liquid phase epitaxial GaAs layer‐substrate interface by controlled in situ etch‐back
National licenceAmerican Institute of Physics | 1980| -
Characteristics of infrared photodetectors produced by radiation doping
National licenceAmerican Institute of Physics | 1973| -
Microwave mixing with niobium variable thickness bridges
National licenceAmerican Institute of Physics | 1977| -
Proceedings - 1991 International Semiconductor Device Research Symposium : December 4 - 6, 1991, Omni Charlottesville Hotel ; [dedicated to the memory of Professor Aldert van der Ziel]
TIBKAT | 1991|Contributors: Mattauch, Robert J.
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