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Photoluminescence of virtual‐surfactant grown InAs/Al0.48In0.52As single quantum wells
National licenceAmerican Institute of Physics | 1992| -
InAs/Ga0.47In0.53As quantum wells: A new III‐V materials system for light emission in the mid‐infrared wavelength range
National licenceAmerican Institute of Physics | 1992| -
Strained InAs single quantum wells embedded in a Ga0.47In0.53As matrix
National licenceAmerican Institute of Physics | 1992| -
Overlayer strain: A key to directly tune the topography of high-index semiconductor surfaces
Online Contents | 1993| -
Virtual‐surfactant epitaxy of strained InAs/Al0.48In0.52As quantum wells
National licenceAmerican Institute of Physics | 1993| -
Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructures
National licenceElsevier | 1993| -
Surface stoichiometry and interface formation during molecular‐beam epitaxy of strained InAs/AlxGa0.48−xIn0.52As heterostructures
American Institute of Physics | 1993| -
Overlayer strain: A key to directly tune the topography of high‐index semiconductor surfaces
National licenceAmerican Institute of Physics | 1993| -
Tunable generation of nanometer-scale corrugations on high-index III-V semiconductor surfaces
Online Contents | 1994| -
Tunable generation of nanometer-scale corrugations on high-index III-V semiconductor surfaces
National licenceAmerican Physical Society | 1994| -
Scattered light noise in gravitational wave interferometric detectors: A statistical approach
National licenceAmerican Physical Society | 1997| -
Scattered light noise in gravitational wave interferometric detectors: A statistical approach
Online Contents | 1997|Contributors: Tournié, Eric -
Anisotropic misfit dislocation nucleation in two-dimensional grown InAs/GaAs(001) heterostructures
National licenceAmerican Institute of Physics | 1998| -
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES - Anisotropic misfit dislocation nucleation in two-dimensional grown InAs-GaAs(001) heterostructures
Online Contents | 1998|Contributors: Tournié, Eric -
Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates
American Institute of Physics | 2004|
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