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Focused ion beam microlithography using an etch‐stop process in gallium‐doped silicon
American Institute of Physics | 1983| -
Effect of ion sputtering on interface chemistry and electrical properties of Au GaAs(100) Schottky contacts
American Institute of Physics | 1984| -
Erratum: Focused ion beam microlithography using an etch‐stop process in gallium‐doped silicon [J. Vac. Sci. Technol. B 1, 1056 (1983)]
American Institute of Physics | 1984| -
Surface morphologies of GaAs layers grown by arsenic‐pressure‐controlled molecular beam epitaxy
American Institute of Physics | 1986| -
Surface structure and bonding of the cleavage faces of tetrahedrally coordinated II–VI compounds
American Institute of Physics | 1988| -
Imaging microanalysis of surfaces with a focused gallium probe
American Institute of Physics | 1988| -
Composition depth profiles of oxidized silicon and sputtered GaAs from angle‐resolved x‐ray photoelectron spectroscopy
American Institute of Physics | 1988| -
Surface rotational phonons on the cleavage faces of tetrahedrally coordinated compound semiconductors
American Institute of Physics | 1989| -
Vacuum lithography for three‐dimensional fabrication using finely focused ion beams
American Institute of Physics | 1990| -
Optical properties of InGaAs/InP semiconductor nanostructures
American Institute of Physics | 1990| -
Studies of β‐SiC (001) and (111) surfaces by scanning tunneling microscopy
American Institute of Physics | 1991| -
Homotype resonant tunneling structures in molecular‐beam epitaxially grown delta‐doped GaAs
American Institute of Physics | 1992| -
The influence of InAs well thickness on the negative differential resistance behaviors in GaSb/AlSb/InAs/GaSb/AlSb/InAs double barrier structures
American Institute of Physics | 1992| -
Molecular beam epitaxy growth of high performance AlGaAs/GaAs quantum well top emitting lasers
American Institute of Physics | 1992| -
Structural considerations in the optimal design of surface‐emitting laser diodes
American Institute of Physics | 1992| -
Growth of AlGaAs and AlGaAs/GaAs heterostructures on misoriented (110)GaAs and a normal incidence type‐II AlAs/AlGaAs quantum well infrared photodetector
American Institute of Physics | 1993| -
AlGaAs/Ge/GaAs heterostructures grown by molecular beam epitaxy
American Institute of Physics | 1994| -
Topography of brittle fracture surfaces of titanium aluminide alloy as revealed by a scanning tunneling microscope
American Institute of Physics | 1994|
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