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Semiconductor device with a passivation layer and method for producing thereof
Free accessEuropean Patent Office | 2021| -
Semiconductor device with a passivation layer and method for producing thereof
Free accessEuropean Patent Office | 2023| -
Semiconductor Device with a Passivation Layer and Method for Producing Thereof
Free accessEuropean Patent Office | 2019| -
Silicon carbide device and a method for manufacturing a silicon carbide device
Free accessEuropean Patent Office | 2016| -
VERFAHREN ZUM ERZEUGEN EINES KORNORIENTIERTEN ELEKTROBANDS UND KORNORIENTIERTES ELEKTROBAND
Free accessEuropean Patent Office | 2023| -
Semiconductor Device with a Passivation Layer and Method for Producing Thereof
Free accessEuropean Patent Office | 2015| -
Silicon Carbide Device and a Method for Manufacturing a Silicon Carbide Device
Free accessEuropean Patent Office | 2015| -
KORNORIENTIERTES ELEKTROBAND UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN ELEKTROBANDS
Free accessEuropean Patent Office | 2019| -
Optimierung des Stickstofflevels während der Haubenglühung
Free accessEuropean Patent Office | 2019| -
Semiconductor component having a doped substrate layer and corresponding methods of manufacturing
Free accessEuropean Patent Office | 2019| -
KORNORIENTIERTES ELEKTROBAND UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN ELEKTROBANDS
Free accessEuropean Patent Office | 2019| -
Semiconductor Component Having a Doped Substrate Layer and Corresponding Methods of Manufacturing
Free accessEuropean Patent Office | 2018| -
Suitability of 4H-SiC homoepitaxy for the production and development of power devices
Tema Archive | 2008| -
Siliziumcarbid-Körper enthaltende Halbleitervorrichtung und Herstellungsverfahren
Free accessEuropean Patent Office | 2023|
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