Year of publication
Type of material
Licence
Language
1–50 of 212 hits
Sort by:
Sort by:
-
MBE growth and interface formation of compound semiconductor heterostructures for optoelectronics
Online Contents | 2007| -
CELLULE PHOTOVOLTAÏQUE MULTI-JONCTIONS DE TYPE III-V SUR SUBSTRAT SILICIUM ET SON PROCEDE DE FABRICATION
Free accessEuropean Patent Office | 2020| -
CELLULE PHOTOVOLTAIQUE MULTI-JONCTIONS DE TYPE III-V SUR SUBSTRAT SILICIUM ET SON PROCEDE DE FABRICATION
Free accessEuropean Patent Office | 2018| -
CELLULE PHOTOVOLTAÏQUE MULTI-JONCTIONS DE TYPE III-V SUR SUBSTRAT SILICIUM ET SON PROCEDE DE FABRICATION
Free accessEuropean Patent Office | 2018| -
Overlayer strain: A key to directly tune the topography of high-index semiconductor surfaces
Online Contents | 1993| -
Tunable generation of nanometer-scale corrugations on high-index III-V semiconductor surfaces
Online Contents | 1994| -
Laser emission systems, heterostructure and active zone having coupled quantum-wells, and use for 1.55 mm laser emission
Free accessEuropean Patent Office | 2015| -
Virtual‐surfactant epitaxy of strained InAs/Al0.48In0.52As quantum wells
National licenceAmerican Institute of Physics | 1993| -
Note: A high transmission Faraday optical isolator in the 9.2 μm range
National licenceAmerican Institute of Physics | 2011| -
Photoluminescence of virtual‐surfactant grown InAs/Al0.48In0.52As single quantum wells
National licenceAmerican Institute of Physics | 1992| -
InAs/Ga0.47In0.53As quantum wells: A new III‐V materials system for light emission in the mid‐infrared wavelength range
National licenceAmerican Institute of Physics | 1992| -
On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study
British Library Online Contents | 2018| -
Anisotropic misfit dislocation nucleation in two-dimensional grown InAs/GaAs(001) heterostructures
National licenceAmerican Institute of Physics | 1998| -
On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study
British Library Online Contents | 2018| -
Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructures
National licenceElsevier | 1993| -
Near-Field Thermophotovoltaic Conversion with High Electrical Power Density and Cell Efficiency above 14%
American Chemical Society | 2021| -
Surface stoichiometry and interface formation during molecular‐beam epitaxy of strained InAs/AlxGa0.48−xIn0.52As heterostructures
American Institute of Physics | 1993| -
Overlayer strain: A key to directly tune the topography of high‐index semiconductor surfaces
National licenceAmerican Institute of Physics | 1993| -
Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates
American Institute of Physics | 2004|
Send my search to (beta)
Send your search query (search terms without filters) to other databases, portals and catalogues to find more interesting hits.
Dimensions:
full data search
or
title and abstract search
Dimensions is a database for abstracts and citations that links information on research funding with the resulting publications, studies and patents.
TIB AV portal
In the TIB AV-Portal, audiovisual media from science and teaching can be foundand own scientific videos can be published.
Specialised Information Service for Mobility and Transport Research (FID move)
Open Research Knowledge Graph (ORKG)
The FID move can be used to search for subject-specific literature, research data and other information from mobility and transport research.
The Open Research Knowledge Graph provides structured descriptions of research content and makes it comparable.
Common Union Catalogue (GVK)
Freely accessible part of the collaborative K10plus catalogue with materials relevant for interlibrary loan and direct delivery services.