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Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates
British Library Conference Proceedings | 2009| -
Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC
British Library Online Contents | 2010| -
Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
British Library Conference Proceedings | 2009| -
Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
British Library Conference Proceedings | 2009| -
Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC
British Library Conference Proceedings | 2009| -
EPR Identification of Defects and Impurities in SiC: To be Decisive
British Library Conference Proceedings | 2009| -
EPR Identification of Defects and Impurities in SiC: To be Decisive
British Library Online Contents | 2009| -
On-Axis Homoepitaxy on Full 2'' 4H-SiC Wafer for High Power Applications
British Library Online Contents | 2009| -
New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC
British Library Conference Proceedings | 2009| -
Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
British Library Online Contents | 2011| -
Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor
British Library Online Contents | 2011| -
Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor
British Library Online Contents | 2009| -
Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
British Library Online Contents | 2009| -
Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC
British Library Conference Proceedings | 2009|
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