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Doping of Si thin films by low‐temperature molecular beam epitaxy
National licenceAmerican Institute of Physics | 1993| -
Doping of Si thin films by low-temperature molecular beam epitaxy
British Library Online Contents | 1993| -
Electron-beam induced current determination of shallow junction depth
British Library Online Contents | 1994| -
Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy
British Library Online Contents | 1993| -
Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities
British Library Online Contents | 1993| -
Influence of fluorine implant on boron diffusion: Determination of process modeling parameters
British Library Online Contents | 1995| -
Response to "Comment on `Time dependence of dopant diffusion in -doped Si films and properties of Si point defects'" [Appl. Phys. Lett. 65, 1320 (1994)]
British Library Online Contents | 1994| -
Time dependence of dopant diffusion in -doped Si films and properties of Si point defects
British Library Online Contents | 1994| -
Oxidation enhanced diffusion in Si B‐doping superlattices and Si self‐interstitial diffusivities
National licenceAmerican Institute of Physics | 1993| -
Point defects in Si after formation of a TiSi2 film: Evidence for vacancy supersaturation and interstitial depletion
National licenceAmerican Institute of Physics | 1996| -
Thermal nitridation enhanced diffusion of Sb and Si(100) doping superlattices
National licenceAmerican Institute of Physics | 1996| -
Trap‐limited interstitial diffusion and enhanced boron clustering in silicon
National licenceAmerican Institute of Physics | 1995| -
Influence of Fluorine Implant on the Transient Enhanced Diffusion of Boron: Determination of Process Modeling Parameters
British Library Conference Proceedings | 1995| -
The influence of TiSi2 and CoSi2 growth on Si native point defects: The role of the diffusing species
National licenceAmerican Institute of Physics | 1996| -
Thermal nitridation enhanced diffusion of Sb and Si(100) doping superlattices
British Library Online Contents | 1996| -
Measuring Vacancy Diffusivity and Vacancy Assisted Clustering by Nitridation Enhanced Diffusion of Sb in Si(100) Doping Superlattices
British Library Conference Proceedings | 1995| -
Point defects in Si after formation of a TiSi~2 film: Evidence for vacancy supersaturation and interstitial depletion
British Library Online Contents | 1996| -
Investigation of mechanisms of vacancy generation in silicon in the presence of a TiSi2 film
National licenceAmerican Institute of Physics | 1997| -
Behavior of intrinsic Si point defects during annealing in vacuum
National licenceAmerican Institute of Physics | 1995| -
Influence of Fluorine and BF~2 Implants on the Transient Enhanced Diffusion of Boron
British Library Conference Proceedings | 1995|
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