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Fabrication of dual-side metal patterns onto textile substrates for wearable electronics by combining wax-dot printing with electroless plating
National licenceRoyal Society of Chemistry | 2016| -
Coordination-bond-driven fabrication of crack-free photonic crystals
National licenceRoyal Society of Chemistry | 2016| -
Diketopyrrolopyrrole (DPP) functionalized tetrathienothiophene (TTA) small molecules for organic thin film transistors and photovoltaic cells
National licenceRoyal Society of Chemistry | 2015| -
Amorphous carbon coating for improving the field emission performance of SiC nanowire cores
National licenceRoyal Society of Chemistry | 2014| -
Repositionable pressure-sensitive adhesive possessing thermal-stimuli switchable transparency
National licenceRoyal Society of Chemistry | 2013| -
Optimization of testing system and experiment research for pump turbine model
Free accessIOP Institute of Physics | 2013| -
Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN
National licenceIOP Institute of Physics | 2013| -
Preparation, electronic structure and photoluminescence properties of RE (RE = Ce, Yb)-activated SrAlSi4N7 phosphors
National licenceRoyal Society of Chemistry | 2013| -
Positive and negative effects of oxygen in thermal annealing of p-type GaN
National licenceIOP Institute of Physics | 2012| -
Contactless electroreflectance, photoluminescence and time-resolved photoluminescence of GaInNAs quantum wells obtained by the MBE method with N-irradiation
National licenceIOP Institute of Physics | 2011| -
THz generation from InN films due to destructive interference between optical rectification and photocurrent surge
National licenceIOP Institute of Physics | 2010| -
Ferroelectric and piezoelectric thin films and their applications for integrated capacitors, piezoelectric ultrasound transducers and piezoelectric switches
Free accessIOP Institute of Physics | 2010| -
Fabrication of ZnO Thin Film Transistors Based on the Substrate of Glass
National licenceTrans Tech Publications | 2010|Contributors: Zhao, C., Yang, J., Cao, J. -
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
National licenceIOP Institute of Physics | 2009| -
Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films
National licenceIOP Institute of Physics | 2009| -
A GaN photodetector integrated structure for wavelength characterization of ultraviolet light
National licenceIOP Institute of Physics | 2008| -
Room temperature electroluminescence from the ZnO homojunction grown on an n+-Si substrate by metal–organic chemical vapor deposition
National licenceIOP Institute of Physics | 2008| -
Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements
National licenceIOP Institute of Physics | 2008| -
Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector
National licenceIOP Institute of Physics | 2008|
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