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Hydrogen passivation of point defects in silicon
National licenceAmerican Institute of Physics | 1980| -
Recombination enhanced defect annealing in n‐InP
National licenceAmerican Institute of Physics | 1984| -
The electrical and defect properties of erbium‐implanted silicon
National licenceAmerican Institute of Physics | 1991| -
Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon
National licenceAmerican Institute of Physics | 1991| -
Measurement of defect profiles in reactive ion etched silicon
American Institute of Physics | 1992| -
Local structure of 1.54‐μm‐luminescence Er3+ implanted in Si
National licenceAmerican Institute of Physics | 1992| -
Comparison of advanced plasma sources for etching applications. IV. Plasma induced damage in a helicon and a multipole electron cyclotron resonance source
American Institute of Physics | 1994| -
Formation of extended defects in silicon by high energy implantation of B and P
National licenceAmerican Institute of Physics | 1996| -
The mechanism of iron gettering in boron‐doped silicon
National licenceAmerican Institute of Physics | 1996| -
Evolution from point to extended defects in ion implanted silicon
National licenceAmerican Institute of Physics | 1997| -
The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si
National licenceAmerican Institute of Physics | 1997| -
Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si
National licenceAmerican Institute of Physics | 1997| -
Electrical signatures and thermal stability of interstitial clusters in ion implanted Si
National licenceAmerican Institute of Physics | 1998| -
Influence of misfit dislocation interactions on photoluminescence spectra of SiGe on patterned Si
National licenceAmerican Institute of Physics | 1998|
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