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A fast preparation technique for high-quality plan view and cross-section TEM specimens of semiconducting materials
National licenceElsevier | 1989| -
Analysis of the capacitance of CdS/CuInSe2 thin film heterojunctions
National licenceElsevier | 1984| -
Analysis of the edge region photocapacitance at constant bias in Te-doped Al0.55Ga0.45As
National licenceElsevier | 1985| -
Analysis of the SiO2 defects originated by phosphorus implantation in MOS structures
National licenceElsevier | 1993| -
An Improved Method for Detection of Words with Unusual Occurrence Frequency in Nucleotidic Sequences
National licenceElsevier | 1993| -
Boron implantation influence on the backgating effect in GaAs MESFETs
National licenceElsevier | 1987| -
Buried oxide layers formed by oxygen implantation on screened oxide silicon wafers: structural analysis
National licenceElsevier | 1993| -
Characterization of the interface states at A1-GaAs schottky barriers with a thin interface layer
National licenceElsevier | 1982| -
Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures
National licenceElsevier | 1985| -
Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures
National licenceElsevier | 1986| -
Effects of surface plasma treatments in relation to electrical isolation in GaAs integrated circuits
National licenceElsevier | 1991| -
Global solution of a nonlinear neutron transport problem with temperature feedback
National licenceElsevier | 1977|
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