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Photoconductance‐calibrated photoluminescence lifetime imaging of crystalline silicon
Wiley | 2008|Keywords: 72.20.Jv -
Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures
Wiley | 2010|Keywords: 72.20.Jv -
Spatially resolved determination of dark saturation current and series resistance of silicon solar cells
Wiley | 2010|Keywords: 72.20.Jv -
Amorphous selenium and its alloys from early xeroradiography to high resolution X‐ray image detectors and ultrasensitive imaging tubes
Wiley | 2009|Keywords: 72.20.Jv -
Characterization of Cu(In,Ga)Se2 thin films by time‐resolved photoluminescence
Wiley | 2006|Keywords: 72.20.Jv -
The origin of reduced fill factors of emitter‐wrap‐through‐solar cells
Wiley | 2008|Keywords: 72.20.Jv -
Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation
Wiley | 2008|Keywords: 72.20.Jv -
Suppressed surface‐recombination structure and surface passivation for improving current gain of 4H‐SiC BJTs
Wiley | 2009|Keywords: 72.20.Jv -
Free‐electron spin surfaces in 3D and 2D zinc‐blende semiconductors
Wiley | 2006|Keywords: 72.20.Jv -
Quantitative evaluation of electroluminescence images of solar cells
Wiley | 2010|Keywords: 72.20.Jv -
Frequency dependent mobility of charge carriers along polymer chains with finite length
Wiley | 2006|Keywords: 72.20.Jv -
Fast series resistance imaging for silicon solar cells using electroluminescence
Wiley | 2009|Keywords: 72.20.Jv -
Spin surfaces and trajectories in valence bands of tetrahedral semiconductors
Wiley | 2004|Keywords: 72.20.Jv -
Surface reconstruction and optical absorption changes for Ge nanoclusters grown on chemically oxidized Si(1 0 0) surfaces
National licenceIOP Institute of Physics | 2013|Keywords: 72.20.Jv. -
High gain observed in X‐ray induced currents in synthetic single crystal diamonds
Wiley | 2007|Keywords: 72.20.Jv -
Recombination lifetime characterization and mapping of silicon wafers and detectors using the microwave photoconductivity decay (μPCD) technique
Elsevier | 2006|Keywords: 72.20.Jv -
Evaluation of deep‐impurity governed photoelectrical properties in differently doped CdTe
Wiley | 2007|Keywords: 72.20.Jv -
Measurements of impact ionization coefficients of electrons and holes in 4H‐SiC and their application to device simulation
Wiley | 2009|Keywords: 72.20.Jv
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