The Hyperfine Energy Spectrum of ^3^1P Donors in a Silicon NMR Quantum Computer (English)
- New search for: Valiev, K. A.
- New search for: Kokin, A. A.
- New search for: Larionov, A. A.
- New search for: Fedichkin, L. E.
- New search for: Valiev, K. A.
- New search for: Kokin, A. A.
- New search for: Larionov, A. A.
- New search for: Fedichkin, L. E.
In:
RUSSIAN MICROELECTRONICS C/C OF MIKROELEKTRONIKA
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29
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285-293
;
2000
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ISSN:
- Article (Journal) / Print
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Title:The Hyperfine Energy Spectrum of ^3^1P Donors in a Silicon NMR Quantum Computer
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Contributors:Valiev, K. A. ( author ) / Kokin, A. A. ( author ) / Larionov, A. A. ( author ) / Fedichkin, L. E. ( author )
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Published in:RUSSIAN MICROELECTRONICS C/C OF MIKROELEKTRONIKA ; 29 ; 285-293
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Publisher:
- New search for: PLENUM
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Publication date:2000-01-01
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Size:9 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.381
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.381 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 29
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Delta-Doped MESFETs on GaAs Grown by Metallorganic Chemical Vapor DepositionGurtovoi, V. L. / Valyaev, V. V. / Shapoval, S. Y. / Morozov, S. V. / Dubonos, S. V. / Asryan, A. A. / Pustovit, A. N. et al. | 2000
- 9
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Surface cleaning with an atomic hydrogen flow in fabricating ohmic and barrier contacts to GaAs and AlxGa1-xAsVishnyakov, A.S. / Kagadei, V.A. / Kozhinova, N.I. / Proskurovskii, D.I. / Romas, L.M. et al. | 2000
- 9
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Surface Cleaning with an Atomic Hydrogen Flow in Fabricating Ohmic and Barrier Contacts to GaAs and Al~g~a~m~m~aGa~1~-~xAsVishnyakov, A. S. / Kagadei, V. A. / Kozhinova, N. I. / Proskurovskii, D. I. / Romas, L. M. et al. | 2000
- 20
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Atomic Force Microscopy for Designing Micro- and Nanoelectronic Devices. Part 2Arutyunov, P. A. / Tolstikhina, A. L. et al. | 2000
- 28
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A Simple Model for Controlling the Roughness of Silicon Dioxide/Polysilicon Interface during OxidationSal'man, E. G. / Perov, G. V. et al. | 2000
- 31
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Charge States in the Si-SiO~2 Transition Region after Radiation and Thermal Field TreatmentsVasil'eva, E. D. / Kolotov, M. N. / Nakhimovich, M. V. / Sokolov, V. I. et al. | 2000
- 35
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Fabrication of Submicron Structures by Anisotropically Etching Resists in an Oxygen Plasma Produced by a Radio-Frequency Induction DischargeAmirov, I. I. / Fedorov, V. A. et al. | 2000
- 43
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REE-Doped Insulating Films in MIM StructuresSokol, V. A. / Pinaeva, M. M. / Gurskaya, E. A. et al. | 2000
- 48
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Physicomathematical Simulation of an Integrated MOS-Type Hall ElementAmelichev, V. V. / Galushkov, A. I. / Mirgorodskii, Y. N. / Tikhomirov, P. A. / Chaplygin, Y. A. / Shubin, S. V. et al. | 2000
- 58
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Mathematical Simulation of Ion-Beam Mixing ProcessesBlinov, Y. F. / Serba, P. V. et al. | 2000
- 62
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Pulse Amplifiers Based on Transimpedance Integrated Op Amps with a Resistive Divider in a Feedback LoopAgakhanyan, T. M. et al. | 2000
- 69
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Synthesis of Three-Level Programmable Logic ArraysBibilo, P. N. et al. | 2000
- 77
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A model and properties of a thermodynamically reversible logic gateValiev, K. A. / Starosel’skii, V. I. et al. | 2000
- 91
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A symmetric bipolar structureRakitin, V. V. et al. | 2000
- 97
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The investigation into charge degradation of MIS structures under strong electric field by a method of controlled current loadAndreev, V. V. / Baryshev, V. G. / Bondarenko, G. G. / Stolyarov, A. A. / Shakhnov, V. A. et al. | 2000
- 104
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Charge-coupled devices with compensated charge transferArutyunov, V. A. / Sorokin, O. V. et al. | 2000
- 106
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The effect of temperature gradient on silicon oxidationRudakov, V. I. / Mochalov, B. V. et al. | 2000
- 113
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Investigation of Ti-Ge/GaAs Schottky barrier contactsBibilashvili, A. P. / Gerasimov, A. B. / Samadashvili, Z. D. / Chopozov, L. G. et al. | 2000
- 117
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Conditions for plasma anodizing of gallium arsenide and their influence on native oxide propertiesBibilashvili, A. P. / Vepkhvadze, M. T. / Gerasimov, A. B. et al. | 2000
- 125
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Turn-on transients in a BISPIN deviceLysenko, A. P. et al. | 2000
- 131
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Virtual scanning: A method for testing one class of self-organizing cellular automataTatur, M. M. / Sadykhov, R. Kh. et al. | 2000
- 137
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Thin-film multilayer magnetic sensors based on the anisotropic magnetoresistive effectKasatkin, S. I. / Murav’ev, A. M. / Vasil’eva, N. P. / Lopatin, V. V. / Popadinets, F. F. / Svatkov, A. V. et al. | 2000
- 137
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Thin-film multilayer magnetic sensor based on the anisotropic magnetoresistive effectKasatkin, S.I. / Muravev, A.M. / Vasileva, N.P. / Lopatin, V.V. / Popadinets, F.F. / Svatkov, A.V. et al. | 2000
- 147
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Implantation of low-energy boron ions into silicon from a low-temperature high-density Ar + BF3 plasmaAmirov, I. I. / Krivelevich, S. A. / Simakin, S. G. / Morozov, O. V. / Orlikovskii, A. A. et al. | 2000
- 153
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SiO2 film deposition in a low-pressure RF inductive discharge SiH4 + O2 plasmaMorozov, O. V. / Amirov, I. I. et al. | 2000
- 159
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Nanometer-thick oxide films produced by electrochemical anodizing of siliconMordvintsev, V. M. / Murav’eva, N. L. et al. | 2000
- 170
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Ti/TiOx single-electron devices produced with a step-edge-cut-off (SECO) methodLitvin, L. V. / Kolosanov, V. A. / Mogil’nikov, K. P. / Cherkov, A. G. / Baksheev, D. G. / Tkachenko, V. A. / Aseev, A. L. et al. | 2000
- 177
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A two-dimensional numerical model of a single-electron transistorAbramov, I. I. / Novik, E. G. et al. | 2000
- 181
-
Stable near-breakdown avalanche electroluminescence from variously shaped microstructuresGruzintsev, A. N. et al. | 2000
- 189
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A mechanism of hysteresis in brightness-voltage characteristics of ZnS: Mn-based light-emitting MISIM structuresAlivov, Ya. I. / Gruzintsev, A. N. et al. | 2000
- 194
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Testing AND-EXOR programmable logic arraysLyul’kin, A. E. et al. | 2000
- 200
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Simulation of implant distribution with the inverse Fokker-Planck equationMozolevskii, I. E. et al. | 2000
- 207
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Simulation of oxygen precipitation in siliconBulyarskii, S. V. / Svetukhin, V. V. / Prikhod’ko, O. V. et al. | 2000
- 215
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Matvei I. Elinson (Memorial)| 2000
- 215
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In memory of Matvei I. Elinson (1918-2000)Gulyaev, Y. V. / Valiev, K. A. / Mesyats, G. N. / Mokerov, V. G. / Orlikovskii, A. A. / Patrikeev, L. N. / Fursei, G. N. / Shrednik, V. N. / Balkarei, Y. I. / Baru, V. G. et al. | 2000
- 217
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The Feasibility of creating a high-speed semiconductor—semimetal—semiconductor transistorLutskii, V. N. / Pinsker, T. N. / Elinson, M. I. et al. | 2000
- 219
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Principles of flicker noise spectroscopy and its application to disordered semiconductors: IonImplanted siliconMakoviichuk, M. I. et al. | 2000
- 235
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Reactive ion etching of copper in an RF N2 + BCl3 + Cl2 PlasmaMal’shakov, V. G. / Berdnikov, A. E. / Popov, A. A. / Gusev, V. N. et al. | 2000
- 241
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Thermal oxidation of indium phosphide in the presence of lead, zirconium, and titanium oxidesMittova, I. Ya. / Shukarev, A. V. / Soshnikov, V. V. / Bubnova, G. G. et al. | 2000
- 246
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Deep traps in heteroepitaxial SOS layers subjected to various treatmentsAdonin, A. S. / Bespalov, A. V. / Kitichenko, T. S. / Kolesnikova, T. G. / Korovin, A. P. / Shiryaeva, M. V. et al. | 2000
- 261
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Simulation of epitaxial growth under ion-beam sputteringTrushin, O. S. / Bochkarev, V. F. / Naumov, V. V. et al. | 2000
- 273
-
Synthesis of multifunction logic modules built on hierarchic neural networksLopin, V. N. et al. | 2000
- 279
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Modeling of the gate junction in GaAs MESFETsTarnovskii, N. G. / Osadchuk, V. S. / Osadchuk, A. V. et al. | 2000
- 285
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The hyperfine energy spectrum of31P donors in a silicon NMR quantum computerValiev, K. A. / Kokin, A. A. / Larionov, A. A. / Fedichkin, L. E. et al. | 2000
- 294
-
Formation of local insulating regions in Si/Si—Ge structures by ion implantation with subsequent stain etchingStarkov, V. V. / Starostina, E. A. / Vyatkin, A. F. / Gorbatov, Yu. B. et al. | 2000
- 299
-
Frequency-response equalization in integrated current amplifiers with collector—base cross couplingProkopenko, V. G. et al. | 2000
- 303
-
Performance improvement of CCD image sensor arraysArutyunov, V. A. / Sorokin, O. V. et al. | 2000
- 307
-
Charge transfer and structural—impurity complexes in the transition layer of the Si/SiO2 systemKrasnikov, G. Ya. / Zaitsev, N. A. / Matyushkin, I. V. et al. | 2000
- 311
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Fabrication of 0.5-μm structures by dry electron lithography and anisotropic plasma etchingAmirov, I. I. / Fedorov, V. A. et al. | 2000
- 311
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Fabrication of 0.5-mum Structures by Dry Electron Lithography and Anisotropic Plasma EtchingAmirov, I. I. / Fedorov, V. A. et al. | 2000
- 316
-
The energy of activation of electromigration in aluminum conductors tested by the drift-velocity methodKononenko, O. V. / Matveev, V. N. / Field, D. P. et al. | 2000
- 324
-
Low-temperature annealing of SIMOX structures in an inhomogeneous temperature fieldRudakov, V. I. / Denisenko, Yu. I. / Mochalov, B. V. et al. | 2000
- 331
-
An adsorption ellipsometric method for studying porous films and coatingsTolmachev, V. A. et al. | 2000
- 345
-
Discrete electron states at the Si(100)/SiO2 interfaceKirillova, S. I. / Primachenko, V. E. / Serba, A. A. / Chernobai, V. A. et al. | 2000
- 349
-
Chip training conditionsGorlov, M. I. / Kovalenko, P. Yu. et al. | 2000
- 355
-
Nonresonant Parametric Amplification of Signals in Neural Networks Through the Rhythms of a Central ProcessorBalkarei, Yu. I. / Naguchev, V. O. / Evtikhov, M. G. / Elinson, M. I. / Kochiev, T. V. et al. | 2000
- 362
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The Influence of Individual Layer Parameters on the Photoluminescent Properties of InxGa1 – xAs/GaAs SystemLomov, A. A. / Imamov, R. M. / Guk, A. V. / Fedorov, Yu. V. / Khabarov, Yu. V. / Mokerov, V. G. et al. | 2000
- 368
-
Resistors Integrated into MCM-D Modules: Fabrication and PerformanceVorob'eva, A. I. / Moskvichev, K. V. et al. | 2000
- 376
-
Ion-Bombardment-Induced Decomposition of Nonequilibrium Solid Solution and the Formation of Periodic StructuresKrivelevich, S. A. et al. | 2000
- 380
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A Helicon Plasma SourceBraginskii, O. V. / Vasil'eva, A. N. / Kovalev, A. S. et al. | 2000
- 391
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High-Rate Deposition of Amorphous SiliconBudagyan, B. G. / Sherchenkov, A. A. / Berdnikov, A. E. / Chernomordik, V. D. et al. | 2000
- 397
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Stabilization of Structure–Impurity and Electrophysical Parameters in the Si/SiO2 SystemZaitsev, N. Ya. / Krasnikov, G. Ya. / Matyushkin, I. V. et al. | 2000
- 401
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Space Surface Parameters Determined from Fourier Transforms in Atomic Force MicroscopyArutyunov, P. A. / Tolstikhina, A. L. et al. | 2000
- 406
-
Identification of Trapping Effects and Ion Neutralization at the Insulator/Semiconductor Interface of MIS Structures from Dynamic Current–Voltage Characteristics of Ion DepolarizationGol'dman, E. I. / Zhdan, A. G. / Kukharskaya, N. F. et al. | 2000
- 413
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Radical Modification of Gate Oxide by Lateral Gettering of Electroactive CentersUritskii, V. Ya. / Krylov, A. P. / Borisov, S. E. et al. | 2000
- 417
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Electroactive Centers at the Outer Interface of an Ultrathin Oxide Layer and Their Effect on the Electrical Performance of Single-Crystal Silicon/Noncrystalline Oxide/Polysilicon StructuresUritskii, V. Ya. / Krylov, A. P. / Bushlyakov, A. A. et al. | 2000