Persistent photoquenching and anion antisite defects in neutron‐irradiated GaAs (English)
National licence
- New search for: Goltzene, A.
- New search for: Meyer, B.
- New search for: Schwab, C.
- New search for: Goltzene, A.
- New search for: Meyer, B.
- New search for: Schwab, C.
In:
Applied Physics Letters
;
54
, 10
;
907-909
;
1989
- Article (Journal) / Electronic Resource
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Title:Persistent photoquenching and anion antisite defects in neutron‐irradiated GaAs
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Contributors:
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Published in:Applied Physics Letters ; 54, 10 ; 907-909
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Publisher:
- New search for: American Institute of Physics
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Publication date:1989-03-06
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 54, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 869
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Threefold upconversion laser at 0.85, 1.23, and 1.73 μm in Er:YLF pumped with a 1.53 μm Er glass laserPollack, S. A. / Chang, D. B. / Birnbaum, M. et al. | 1989
- 872
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Photocarrier generation and injection at the interface in double‐layered organic photoconductorsKanemitsu, Yoshihiko / Imamura, Shunji et al. | 1989
- 875
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Visible‐wavelength amplified spontaneous emission in a neodymium‐doped optical fiber pumped at 1064 nmCarruthers, T. F. / Duling, I. N. / Shaw, C. M. / Friebele, E. J. et al. | 1989
- 878
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Coherence saturation for beams of energetic photonsCsonka, Paul L. et al. | 1989
- 881
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In situ laser patterned desorption of GaAs quantum wells for monolithic multiple wavelength diode lasersEpler, J. E. / Treat, D. W. / Chung, H. F. / Tjoe, T. / Paoli, T. L. et al. | 1989
- 884
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Modulation bandwidth of GaAs/AlGaAs single quantum well lasers operating at the second quantized stateLarsson, Anders / Lindstro¨m, Carsten et al. | 1989
- 887
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Resonant cavity for the stimulated emission of x raysCaticha, Ariel / Caticha, Nestor / Caticha‐Ellis, S. et al. | 1989
- 890
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Picosecond GaAs‐based photoconductive optoelectronic detectorsSmith, F. W. / Le, H. Q. / Diadiuk, V. / Hollis, M. A. / Calawa, A. R. / Gupta, S. / Frankel, M. / Dykaar, D. R. / Mourou, G. A. / Hsiang, T. Y. et al. | 1989
- 893
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Single‐beam overwriting with melt‐erasing process in an InSbTe phase‐change optical diskMaeda, Yoshihito / Andoh, Hisashi / Ikuta, Iaso / Nagai, Masaichi / Katoh, Yoshimi / Minemura, Hiroyuki / Tsuboi, Nobuyoshi / Satoh, Yoshio / Gotoh, Norio / Ishigaki, Masaji et al. | 1989
- 896
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Optical nonlinearities induced by thermal effects in polymer dispersed liquid crystalsSimoni, F. / Cipparrone, G. / Umeton, C. / Arabia, G. / Chidichimo, G. et al. | 1989
- 898
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Measurements of fractal dimension for Co‐Si interfacial layersCho, N. I. / Bene´, R. W. et al. | 1989
- 901
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Formation of an interfacial AlN layer in an Al/Si3N4 thin‐film systemBrener, R. / Edelman, F. / Gutmanas, E. Y. et al. | 1989
- 904
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Improvement in the boron doping efficiency of hydrogenated amorphous silicon carbide films using BF3Asano, A. / Sakai, H. et al. | 1989
- 907
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Persistent photoquenching and anion antisite defects in neutron‐irradiated GaAsGoltzene, A. / Meyer, B. / Schwab, C. et al. | 1989
- 910
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Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAsKuech, T. F. / Tischler, M. A. / Potemski, R. et al. | 1989
- 913
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Low‐threshold disorder‐defined buried heterostructure strained‐layer AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well lasers (λ∼910 nm)Major, J. S. / Guido, L. J. / Hsieh, K. C. / Holonyak, N. / Stutius, W. / Gavrilovic, P. / Williams, J. E. et al. | 1989
- 916
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Ion beam enhanced diffusion of B during Si molecular beam epitaxyPukite, P. R. / Iyer, S. S. / Scilla, G. J. et al. | 1989
- 919
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Quantum calculations of ballistic transportLin, J. / Chiu, L. C. et al. | 1989
- 922
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GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxyHaywood, S. K. / Chidley, E. T. R. / Mallard, R. E. / Mason, N. J. / Nicholas, R. J. / Walker, P. J. / Warburton, R. J. et al. | 1989
- 925
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Variation in misfit dislocation behavior as a function of strain in the GeSi/Si systemHull, R. / Bean, J. C. et al. | 1989
- 928
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Space‐charge‐limited current analysis of the leakage current and interface states of GaAs p/n diode solar cellsPartain, L. D. / Liu, D. D. et al. | 1989
- 931
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General interfacial layer expression for the equilibrium Schottky barrier height and its application to annealed Au‐GaAs contactsHorva´th, Zs. J. et al. | 1989
- 934
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Effect of quasibound‐state lifetime on the oscillation power of resonant tunneling diodesBrown, E. R. / Parker, C. D. / Sollner, T. C. L. G. et al. | 1989
- 937
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Temperature dependence of the mercury telluride‐cadmium telluride band offsetMalloy, K. J. / Van Vechten, J. A. et al. | 1989
- 940
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Nonrandom doping and elastic scattering of carriers in semiconductorsLevi, A. F. J. / McCall, S. L. / Platzman, P. M. et al. | 1989
- 943
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Effect of a GaAs buffer layer grown at low substrate temperatures on a high‐electron‐mobility modulation‐doped two‐dimensional electron gasMelloch, M. R. / Miller, D. C. / Das, B. et al. | 1989
- 946
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Superconducting phonon spectroscopy using a low‐temperature scanning tunneling microscopeLeDuc, H. G. / Kaiser, W. J. / Hunt, B. D. / Bell, L. D. / Jaklevic, R. C. / Youngquist, M. G. et al. | 1989
- 949
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High‐temperature superconductor opening switchTzeng, Y. / Cutshaw, C. / Roppel, T. / Wu, C. / Tanger, C. W. / Belser, M. / Williams, R. / Czekala, L. / Fernandez, M. / Askew, R. et al. | 1989
- 951
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Low‐noise thin‐film TlBaCaCuO dc SQUIDs operated at 77 KKoch, R. H. / Gallagher, W. J. / Bumble, B. / Lee, W. Y. et al. | 1989
- 954
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Role of the oxygen atomic beam in low‐temperature growth of superconducting films by laser depositionZheng, J. P. / Ying, Q. Y. / Witanachchi, S. / Huang, Z. Q. / Shaw, D. T. / Kwok, H. S. et al. | 1989
- 957
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Dense Bi‐Sr‐Ca‐Cu‐O superconducting films prepared by spray pyrolysisHsu, H. M. / Yee, I. / DeLuca, J. / Hilbert, C. / Miracky, R. F. / Smith, L. N. et al. | 1989
- 960
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Detection of surface (∼1 μm) impurity phases in high Tc superconductorsCooke, D. W. / Jahan, M. S. / Smith, J. L. / Maez, M. A. / Hults, W. L. / Raistrick, I. D. / Peterson, D. E. / O’Rourke, J. A. / Richardson, S. A. / Doss, J. D. et al. | 1989
- 963
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Lorentz microscopy on dynamically written domains in GdTbFeGreidanus, F. J. A. M. / Jacobs, B. A. J. / den Broeder, F. J. A. / Spruit, J. H. M. / Rosenkranz, M. et al. | 1989
- 965
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Dielectric properties of silicon oxynitride filmsNiklasson, G. A. / Eriksson, T. S. / Brantervik, K. et al. | 1989
- 968
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Erratum: Reinvestigation of the carbon films prepared by ArF excimer laser‐induced chemical vapor deposition [Appl. Phys. Lett. 53, 1812 (1988)]Kitahama, Katsuki / Hirata, Kazuhiko / Nakamatsu, Hirohide / Kawai, Shichio / Fujimori, Naoji / Imai, Takahiro / Yoshino, Hiroshi / Doi, Akira et al. | 1989