Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors (English)
- New search for: Constantoudis, V.
- New search for: Patsis, G. P.
- New search for: Tserepi, A.
- New search for: Gogolides, E.
- New search for: Constantoudis, V.
- New search for: Patsis, G. P.
- New search for: Tserepi, A.
- New search for: Gogolides, E.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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21
, 3
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1019-1026
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2003
- Article (Journal) / Electronic Resource
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Title:Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors
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Contributors:Constantoudis, V. ( author ) / Patsis, G. P. ( author ) / Tserepi, A. ( author ) / Gogolides, E. ( author )
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:2003-05-01
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Size:8 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 21, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 927
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Focused ion beam induced surface amorphization and sputter processesBasnar, B. / Lugstein, A. / Wanzenboeck, H. / Langfischer, H. / Bertagnolli, E. / Gornik, E. et al. | 2003
- 931
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Interface analysis of atomic layer deposited-TiN gate electrodes on ultrathin layersSell, Bernhard / Sänger, Annette / Krautschneider, Wolfgang et al. | 2003
- 936
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Effect of laser annealing on delta-doped boron for super-steep-retrograded well formation using selective Si epitaxyLee, Jung-Ho / Lee, Jeong-Youb / Weon, Dae-Hee / Hahn, Seung-Ho / Lee, Seok-Kiu / Ichikawa, Masakazu et al. | 2003
- 942
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Using electron cyclotron resonance sputtering in the deposition of ultrathin gate dielectricsJin, Yoshito / Saito, Kunio / Shimada, Masaru / Ono, Toshiro et al. | 2003
- 949
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All solid-state rechargeable thin-film microsupercapacitor fabricated with tungsten cosputtered ruthenium oxide electrodesKim, Han-Ki / Cho, Suk-Ho / Ok, Young-Woo / Seong, Tae-Yeon / Yoon, Young Soo et al. | 2003
- 953
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Electrical properties of aluminum oxide films deposited on indium-tin-oxide glassesLee, Jiyoul / Kim, S. S. / Im, Seongil et al. | 2003
- 957
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Integrally gated carbon nanotube field emission cathodes produced by standard microfabrication techniquesGuillorn, M. A. / Hale, M. D. / Merkulov, V. I. / Simpson, M. L. / Eres, G. Y. / Cui, H. / Puretzky, A. A. / Geohegan, D. B. et al. | 2003
- 960
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Chemical mechanical polishing defect reduction via a plasma etch in the 0.15 μm shallow trench isolation processChiu, C. M. / Yen, T. F. / Chiu, K.-F. et al. | 2003
- 966
-
Two-dimensional photonic crystals by focused-ion-beam etching of multilayer membranesWang, K. / Filloux, P. / Paraire, N. / Roca i Cabarrocas, P. / Bulkin, P. et al. | 2003
- 970
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Comparison of two surface preparations used in the homoepitaxial growth of silicon films by plasma enhanced chemical vapor depositionReidy, Sean / Varhue, Walter J. / Lavoie, Mark / Mongeon, Stephen / Adams, Edward et al. | 2003
- 975
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Selective epitaxial growth for plugs of high-density devicesCheong, Woo-Seok / Lee, Seok-Kiu / Roh, Jae-Sung et al. | 2003
- 981
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Depletion- and enhancement-mode high-electron-mobility transistors with high-breakdown voltageLi, Yih-Juan / Hsu, Wei-Chou / Chen, Yen-Wei / Shieh, Hir-Ming et al. | 2003
- 984
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Photoluminescence and micro-Raman scattering in Mn-doped ZnS nanocrystalline semiconductorsYang, Richard D. / Tripathy, S. / Tay, Francis E. H. / Gan, L. M. / Chua, S. J. et al. | 2003
- 989
-
Simple magnetic focusing for an electron gun based on a microtip arrayBarjon, J. / Jalabert, D. / Levy, F. et al. | 2003
- 996
-
Fabrication of multiwalled carbon nanotube bridges by poly-methylmethacrylate suspended dispersionLee, S.-B. / Teo, K. B. K. / Amaratunga, G. A. J. / Milne, W. I. / Chhowalla, M. / Hasko, D. G. / Ahmed, H. et al. | 2003
- 1000
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Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot -vapor annealing probed using point-contact devicesKamiya, Toshio / Durrani, Zahid A. K. / Ahmed, Haroon / Sameshima, Toshiyuki / Furuta, Yoshikazu / Mizuta, Hiroshi / Lloyd, Neil et al. | 2003
- 1004
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Individual free-standing carbon nanofibers addressable on the 50 nm scaleMoser, J. / Panepucci, R. / Huang, Z. P. / Li, W. Z. / Ren, Z. F. / Usheva, A. / Naughton, M. J. et al. | 2003
- 1008
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Quantification of line-edge roughness of photoresists. I. A comparison between off-line and on-line analysis of top-down scanning electron microscopy imagesPatsis, G. P. / Constantoudis, V. / Tserepi, A. / Gogolides, E. / Grozev, G. et al. | 2003
- 1019
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Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptorsConstantoudis, V. / Patsis, G. P. / Tserepi, A. / Gogolides, E. et al. | 2003
- 1027
-
Enhanced infrared detection characteristics of films prepared using alternating and V layersKang, Ho Kwan / Han, Yong Hee / Shin, Hyun Jun / Moon, Sung / Kim, To Hoon et al. | 2003
- 1032
-
Real-time observation of electromigration-induced stress changes with imaging x-ray topographySolak, H. H. / David, C. / Gobrecht, J. / Drakopoulos, M. et al. | 2003
- 1037
-
Atomic force microscopy and x-ray diffraction studies of aluminum-induced crystallization of amorphous silicon in Al/α-Si:H, α-Si:H/Al, and Al/α-Si:H/Al thin film structuresKishore, Ram / Shaik, Arshad / Naseem, H. A. / Brown, W. D. et al. | 2003
- 1048
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Correlation between structural and transport properties of silicon thin films deposited at various substrate temperaturesRoy, D. / Das, Chandan / Longeaud, C. / Houzé, F. / Ray, S. et al. | 2003
- 1055
-
Real-time, in situ film thickness metrology in a 10 Torr W chemical vapor deposition process using an acoustic sensorHenn-Lecordier, L. / Kidder, J. N. / Rubloff, G. W. / Gogol, C. A. / Wajid, A. et al. | 2003
- 1064
-
Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded buffer layersGroenert, Michael E. / Pitera, Arthur J. / Ram, Rajeev J. / Fitzgerald, Eugene A. et al. | 2003
- 1070
-
Height measurement of dsDNA and antibodies adsorbed on solid substrates in air by vibrating mode scanning polarization force microscopyLi, Xiao-jun / Sun, Jie-lin / Zhou, Xing-fei / Li, Gang / He, Pin-gang / Fang, Yu-zi / Li, Min-qian / Hu, Jun et al. | 2003
- 1074
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Improvement on electron field emission properties of nanocrystalline diamond films by co-doping of boron and nitrogenLin, I-Nan / Hsu, Tung / Lin, Gia-Ming / Chou, Yi-Ping / Chen, Tong T. / Cheng, Hsin-Fung et al. | 2003
- 1080
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Rutherford backscattering analysis of GaN decompositionChoi, H. W. / Cheong, M. G. / Rana, M. A. / Chua, S. J. / Osipowicz, T. / Pan, J. S. et al. | 2003
- 1084
-
Nanocomposite coatings within the system Ti–B–N deposited by plasma assisted chemical vapor depositionStoiber, M. / Mitterer, C. / Schoeberl, T. / Badisch, E. / Fontalvo, G. / Kullmer, R. et al. | 2003
- 1092
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Coating protecting layers in alternating current-plasma display panelsLee, W. T. / Im, S. J. / Lee, D. Y. / Yu, SeGi / Kim, J. M. / Han, J. G. / Lee, J. W. / Choi, E. H. et al. | 2003
- 1099
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Improved nucleation of TiN atomic layer deposition films on SiLK low-k polymer dielectric using an atomic layer deposition adhesion layerElam, J. W. / Wilson, C. A. / Schuisky, M. / Sechrist, Z. A. / George, S. M. et al. | 2003
- 1108
-
Characteristics of plasma display with rf microdischargeKang, J. et al. | 2003
- 1112
-
Electrical and plasma property measurements of a deep reactive ion etching Bosch processAbraham, I. C. / Woodworth, J. R. / Riley, M. E. / Miller, P. A. / Shul, R. J. / Willison, C. G. et al. | 2003
- 1120
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Emission properties of carbon nanotubes grown on various catalytic layers coated glass using plasma-enhanced chemical-vapor deposition with CO gasHan, Jae-Hee / Choi, Sun Hong / Lee, Tae Young / Yoo, Ji-Beom / Park, Chong-Yun / Jung, T. W. / Kim, H. J. / Park, Y. J. / Han, I. T. / Heo, J. N. et al. | 2003
- 1126
-
Measurement of V/III ratio using threshold photoemissionZinck, J. J. / Owen, J. H. G. / Barvosa-Carter, W. et al. | 2003
- 1129
-
Exploring metal vapor vacuum arc implanted copper to catalyze electroless-plated copper film on a TaN/FSG/Si assemblyChen, Uei-Shin / Lin, Jian-Hong / Hsieh, Wei-Jen / Shih, Pai-Shen / Weng, Ko-Wei / Wang, Da-Yung / Chang, Yee-Shyi / Shih, Han C. et al. | 2003
- 1134
-
Comparative study of and ion implantation in GaAs(100): Surface roughness and evaluation of lattice strainKuri, G. / Materlik, G. / Hagen, V. / Wiesendanger, R. et al. | 2003
- 1143
-
Sub-150 nm, high-aspect-ratio features using near-field phase-shifting contact lithographyDang, Hai / Tan, Jackie Lim-Piu / Horn, Mark W. et al. | 2003
- 1149
-
Effect of chemical vapor deposition energy sources on the structure of SiC prepared by carbon nanotubes-confined reactionShajahan, Md. / Mo, Y. H. / Nahm, K. S. et al. | 2003
- 1157
-
Effect of current spreading on luminescence improvement in selectively oxidized AlGaInP light-emitting diodesNee, Tzer-En / Chien, Kuo-Tai / Chou, Yi-Lun / Chou, Li-Chang / Lin, Chung-Han / Lin, Ray-Ming / Fang, Bor-Ren / Chang, Shi-Shya et al. | 2003
- 1161
-
Effects of Ti insertion between Cu and TiN layers on reliability in Cu/Ti/TiN/Ti layered damascene interconnectsAbe, Kazuhide / Onoda, Hiroshi et al. | 2003
- 1169
-
X-ray photoelectron spectroscopy study of electrodeposited nanostructured filmsWang, Adele Qi / Punchaipetch, Prakaipetch / Wallace, Robert M. / Golden, Teresa Diane et al. | 2003
- 1176
-
High aspect ratio etching of atomic force microscope-patterned nitrided siliconHarfenist, Steven A. / Yazdanpanah, Mehdi M. / Cohn, Robert W. et al. | 2003
- 1181
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Erratum: “The influence of the electronic structure on the field electron emission from carbon nanotubes” [J. Vac. Sci. Technol. B 21, 382 (2003)]Filip, V. / Nicolaescu, D. / Tanemura, M. / Okuyama, F. et al. | 2003