Electrical conductivity in niobium implanted TiO2 rutile (English)
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In:
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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80-81
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1123-1127
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1993
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Electrical conductivity in niobium implanted TiO2 rutile
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Contributors:Ramos, S.M.M. ( author ) / Canut, B. ( author ) / Brenier, R. ( author ) / Gea, L. ( author ) / Romana, L. ( author ) / Brunel, M. ( author ) / Thevenard, P. ( author )
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Published in:
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Publisher:
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Publication date:1993-01-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 80-81
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Influence of ionization processes on radiation defect formationAscheron, C. / Biersack, J.P. / Goppelt-Langer, P. / Erxmeyer, J. et al. | 1993
- 7
-
Solid effect on the electronic stopping and application to range estimationNakagawa, S.T. et al. | 1993
- 12
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The effect of high charge states on the stopping and ranges of ions in solidsBiersack, J.P. et al. | 1993
- 16
-
Numerical evaluation of the electronic stopping power for heavy ions in solidsYou-Nian Wang / Teng-Cai Ma et al. | 1993
- 20
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Chemical bond effects on the low-energy electronic stopping power of Li and He ions on saturated alcohols, ethers and aminesSoullard, J. / Cruz, S.A. / Cabrera-Trujillo, R. et al. | 1993
- 24
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Double scattering in elastic recoil spectraRepplinger, F. / Stoquert, J.P. / Siffert, P. et al. | 1993
- 28
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Computer simulation of channeling implantation at high and medium energiesPosselt, M. et al. | 1993
- 33
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Energy loss and equilibrium charge distribution of nitrogen ions transmitted through thin silicon crystalsBentini, G.G. / Bianconi, M. / Nipoti, R. et al. | 1993
- 37
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Energy loss and straggling of MeV 4He ions in a Si/Sb multilayer targetNiemann, D. / Oberschachtsiek, P. / Kalbitzer, S. / Zeindl, H.P. et al. | 1993
- 41
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Electronic stopping of hydrogen ions in graphite and amorphous carbonNečas, Vladimír / Käferböck, Wolfgang / Rössler, Wolfgang / Bauer, Peter et al. | 1993
- 45
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Kinetic approach to multiple scattering of heavy ions in the channeling regimeMuralev, V.A. et al. | 1993
- 49
-
Shell effects observed in exit charge state distribution of 1–30 keV atomic projectiles transiting ultrathin carbon foilsFunsten, H.O. / Barraclough, B.L. / McComas, D.J. et al. | 1993
- 49
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Shell effects observed in exit charge state distributions of 1-30 keV atomic projectiles transiting ultrathin carbon foilsFunsten, H. O. / Barraclough, B. L. / McComas, D. J. et al. | 1993
- 53
-
Range parameters of Au and Cs implanted into BN and SiC filmsFichtner, P.F.P. / Herberts, M.R. / Grande, P.L. / Behar, M. / Fink, D. / Zawislak, F.C. et al. | 1993
- 58
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Channeling effects in high energy ion implantation: Si(N)Berti, M. / Brusatin, G. / Carnera, A. / Gasparotto, A. / Fabbri, R. et al. | 1993
- 62
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Range measurement of boron isotopes in silicon from 600 keV to 2 MeVGoppelt, P. / Biersack, J.P. / Gebauer, B. / Fink, D. / Bohne, W. / Wilpert, M. / Wilpert, Th. et al. | 1993
- 65
-
Electronic stopping effects in Fe60Co40 films irradiated with high energy ionsRivière, J.P. / Dinhut, J.F. / Paumier, E. / Dural, J. et al. | 1993
- 73
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Collision cascades in Zr3FeHowe, L.M. / Rainville, M.H. / Phillips, D. / Plattner, H. / Bonnett, J.D. et al. | 1993
- 80
-
Valence and conduction band electronic distributions in ion beam prepared samplesBelin, Esther / Traverse, Agnès / Sonder, Albert et al. | 1993
- 86
-
Radiation-induced disordering and defect production in Cu3Au and Ni3Al studied by molecular dynamics simulationde la Rubia, T.Diaz / Caro, A. / Spaczer, M. / Janaway, G.A. / Guinan, M.W. / Victoria, M. et al. | 1993
- 91
-
An ion beam mixing model for compound formation: the case of Pd/SiDesimoni, Judith / Traverse, Agnès et al. | 1993
- 94
-
Simulation of ion sputtering of rotating amorphous or polycrystalline solidsWege, S. / Bautsch, M. / Rübesame, D. / Niedrig, H. / Wittich, T. et al. | 1993
- 98
-
On the efficiency of deposited energy density for ion beam mixing processes with ions implanted during and after thin metal film depositionTashlykov, I.S. / Belyi, I.M. / Bobrovich, O.G. / Kalbitzer, S. / Meyer, O. / Wolf, G.K. / Enders, B. et al. | 1993
- 102
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Instability of homogeneous distribution of radiation defects in metals in the case of heavily fluctuating defect productionDevyatko, Yu.N. / Makletsov, A.A. / Tronin, V.N. et al. | 1993
- 106
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Defect distributions in MeV ion bombarded siliconHallén, Anders / Svensson, Bengt G. et al. | 1993
- 110
-
Fluence dependent concentration of low-energy Ga implanted in SiGnaser, H. / Steltmann, J. / Oechsner, H. et al. | 1993
- 115
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Self-organizing processes in metals by low-energy ion beamsTereshko, I.V. / Khodyrev, V.I. / Tereshko, V.M. / Lipsky, E.A. / Goncharenya, A.V. / Ofori-Sey, S. et al. | 1993
- 120
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Ion-beam induced atomic transport at the Sb/Ni interfaceShi, F. / Weber, Th. / Bolse, W. / Lieb, K.P. et al. | 1993
- 124
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Ion monitoring of ion beam dynamic mixing processChayahara, Akiyoshi / Kiuchi, Masato / Mokuno, Yoshiaki / Horino, Yuji / Kanenaga, Fujii / Satou, Mamoru et al. | 1993
- 128
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Damage profiles in MgO single crystals after krypton implantationFriedland, E. et al. | 1993
- 132
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Giant radiation damage produced by the impact of heavy molecular onto silicon single crystalCerofolini, G. F. / Bertoni, S. / Meda, L. / Balboni, R. et al. | 1993
- 132
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Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystalCerofolini, G.F. / Bertoni, S. / Meda, L. / Balboni, R. / Corni, F. / Frabboni, S. / Ottaviani, G. / Tonini, R. / Foglio Para, A. et al. | 1993
- 137
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A refined model of the interface mixing in local thermal spikesBolse, Wolfgang et al. | 1993
- 142
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Investigation of thin films by high-energy ERDAGoppelt, P. / Biersack, J.P. / Gebauer, B. / Fink, D. / Bohne, W. / Wilpert, M. / Wilpert, Th. et al. | 1993
- 146
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Time and energy dependent recoil distributions in mixturesWayne Brasure, L. / Prinja, Anil K. et al. | 1993
- 151
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The ultimate depth resolution in SIMS profiling: low-energy ion beam mixing of AuPt interfaceLikonen, J. / Hautala, M. / Koponen, I. et al. | 1993
- 159
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Atomic transport in ion mixed Pd/Co bilayerChae, K.H. / Jang, H.G. / Song, J.H. / Woo, J.J. / Choi, B.S. / Jeong, K. / Whang, C.N. et al. | 1993
- 163
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Ion beam mixing isotopic silver bilayers by 200 keV germaniumKing, B. V. / Jeynes, C. / Webb, R. P. / Kilner, J. A. et al. | 1993
- 163
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Ion beam mixing of isotopic silver bilayers by 200 keV germaniumKing, B.V. / Jeynes, C. / Webb, R.P. / Kilner, J.A. et al. | 1993
- 167
-
Ion beam mixing of ceramic/metal interfacesCorts, T. / Traverse, A. / Bolse, W. et al. | 1993
- 172
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Computer simulation of point-defect distributions generated by ion implantationJaraíz, M. / Arias, J. / Rubio, J.E. / Bailón, L.A. / Barbolla, J. et al. | 1993
- 176
-
Lattice location and annealing studies of heavy ion implanted diamondHofsäss, H. / Restle, M. / Wahl, U. / Recknagel, E. et al. | 1993
- 180
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Lattice location of Er in GaAs and Al0.5Ga0.5As layers grown by MBE on (100) GaAs substratesAlves, E. / da Silva, M.F. / Evans, K.R. / Jones, C.R. / Melo, A.A. / Soares, J.C. et al. | 1993
- 184
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Mercury implanted into aluminium: temperature and concentration dependence of the substitutional componentKhubeis, I. / Meyer, O. et al. | 1993
- 188
-
Lattice location and migration of lead in ironJagielski, Jacek / Turos, Andrzej et al. | 1993
- 192
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Lattice site occupation of iodine implanted into aluminiumHauser, T. / Gerber, R. / Xiong, G.C. / Strehlau, B. / Meyer, O. et al. | 1993
- 196
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Lattice location of implanted fluorine in diamondSmallman, C.G. / Fearick, R.W. / Derry, T.E. et al. | 1993
- 201
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β-NMR of 12B in Si: a low-dose implantation studyFischer, B. / Seelinger, W. / Frank, H.-P. / Diehl, E. / Ergezinger, K.-H. / Ittermann, B. / Mai, F. / Marbach, K. / Weissenmayer, S. / Welker, G. et al. | 1993
- 207
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Recent advances in ion beam modification of metalsSmidt, F.A. / Hubler, G.K. et al. | 1993
- 217
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Microscopic characteristics and electrochemical properties of carbon-implanted steels in a non-aqueous acetic acid mediumUeda, Yasuhiko / Sekiguchi, Atsushi / Yuasa, Makoto / Sekine, Isao / Fujihana, Takanobu / Takahashi, Katsuo / Iwaki, Masaya et al. | 1993
- 221
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Effect of Mg segregation at grain boundaries on corrosion behavior of intermetallic compound Ni3Al(B)Liu Xianghuai / Jian Binyao / Wang Xi / Yang Genqing / Zou Shichang / Sun Jian / Schroer, A. / Ensinger, W. / Wolf, G.K. / Kalbitzer, S. et al. | 1993
- 225
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Wear resistance of boron nitride coated metalAndoh, Yasunori / Nishiyama, Satoshi / Sakai, Shigeki / Ogata, Kiyoshi / Fujimoto, Fuminori et al. | 1993
- 229
-
Study of surface modification of WCCo alloy by nitrogen implantationShi, W.D. / Wen, X.Y. / Liu, J.H. / Ren, C.S. / Long, Z.H. / Zhang, G.B. / Gong, Z.X. / Wang, Y.N. / Zhang, T. et al. | 1993
- 233
-
Improvement in wear characteristics of steel tools by metal ion implantationRück, D.M. / Boos, D. / Brown, I.G. et al. | 1993
- 237
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Metallurgical study on hardness distribution by high energy ion implantation taking notice of solid-solubilityHigeta, K. / Yoshida, Y. / Sato, M. / Motonami, Y. / Kumagai, M. / Saito, H. / Satou, M. et al. | 1993
- 242
-
Pulsed ion sources for surface modification of materialsKorenev, S. et al. | 1993
- 246
-
Improvement of rolling contact fatigue life of ion implanted M50 steelTorp, B. / Nielsen, B.R. / Dodd, A. / Kinder, J. / Rangel, C.M. / DaSilva, M.F. / Courage, B. et al. | 1993
- 250
-
Characteristics of the nitrogen ion implanted intermetallic compound TiAlXi, Wang / Yunjie, Yang / Xianghuai, Liu / Shichang, Zou / Tanaguchi, Shigeji / Takahashi, Katsuo / Iwaki, Masaya et al. | 1993
- 254
-
Effects of implantation treatments on micromechanical properties of M2 steelAlonso, F. / Viviente, J.L. / Oñate, J.I. / Torp, B. / Nielsen, B.R. et al. | 1993
- 258
-
Depth profiles of C, N and O on carbon coated steel surfaces made by IBADKolitsch, A. / Hentschel, E. / Richter, E. et al. | 1993
- 262
-
A comparison of plasma immersion ion implantation with conventional ion implantationKenny, M.J. / Wielunski, L.S. / Tendys, J. / Collins, G.A. et al. | 1993
- 267
-
The pitting corrosion behavior of aluminum ion implanted with titaniumYao, X.Y. / Kumai, C.S. / Devine, T.M. / Fojas, P.B. / Ivanov, I.C. / Yu, K.-M. / Brown, I.G. et al. | 1993
- 271
-
Improvement of physical and chemical properties of steel implanted with Cr+, Ti+, Si+ ionsTashlykov, I.S. / Belyi, I.M. / Bobrovich, O.G. / Tuljev, V.V. / Shadruchin, M.G. / Kolotyrkin, V.I. / Tomashpolskii, M.Yu. / Kulikauskas, V.S. et al. | 1993
- 275
-
Electrochemical absorption of hydrogen into N+, O+ and Ar+ implanted palladium electrodesTakahashi, Katsuo / Ueshima, Masato / Iwaki, Masaya et al. | 1993
- 279
-
Electrochemical behavior of titanium implanted with nickel and tantalum ionsSugizaki, Y. / Yasunaga, T. / Saton, H. et al. | 1993
- 285
-
Aqueous corrosion of ion beam mixed Ta films on 13% chromium steelHuang, N.K. et al. | 1993
- 289
-
High temperature oxidation of ion implanted 2011 aluminum alloyChu, J.W. / Dytlewski, N. / Evans, P.J. / Sood, D.K. et al. | 1993
- 289
-
High temperature oxidation of ion implanted 2011 aluminium alloyChu, J. W. / Dytlewski, N. / Evans, P. J. / Sood, D. K. et al. | 1993
- 294
-
Ion implantation of Raney copper catalystsDurbach, S. / Mellor, J. / Coville, N.J. / Derry, T.E. et al. | 1993
- 297
-
The effects of Ti implantation on corrosion and adhesion of TiN coated stainless steelBaba, K. / Nagata, S. / Hatada, R. / Daikoku, T. / Hasaka, M. et al. | 1993
- 303
-
Phase formation in iron after high-fluence ion implantationRauschenbach, Bernd et al. | 1993
- 309
-
CEMS study of 57Fe implantation in nickelMarest, G. / Parellada, J. / Principi, G. / Tosello, C. et al. | 1993
- 313
-
Modification of the thermal behavior of iron-carbonitrides induced by Kr bombardment on nitrogen-implanted low carbon steelFoerster, C.E. / Amaral, L. / Moncoffre, N. / Behar, M. et al. | 1993
- 317
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Evolution of lead precipitates in ion implanted aluminiumBourdelle, K.K. / Johansen, A. / Schmidt, B. / Andersen, H.H. / Johnson, E. / Sarholt-Kristensen, L. / Steenstrup, S. / Yu, L. et al. | 1993
- 323
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Investigation of buried AIN layers formed by nitrogen implantation into AlLin, C. / Li, Y. / Kilner, J. A. / Chater, R. J. et al. | 1993
- 323
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Investigation of buried AlN layers formed by nitrogen implantation into AlLin, C. / Kilner, J.A. / Chater, R.J. / Li, J. / Nejim, A. / Zhang, J.P. / Hemment, P.L.F. et al. | 1993
- 327
-
Enhanced stability of nitrides in α-Fe co-implanted with Cr + N or Al + NKopcewicz, M. / Jagielski, J. / Turos, A. / Gawlik, G. et al. | 1993
- 332
-
Formation of metastable carbide and fractal structure in Co thin films by carbon ion implantationLiu, B.X. / Tao, K. et al. | 1993
- 336
-
Characteristics of tool steel implanted with multi-energy B+ and single-energy N2 + ionsOhtani, S. / Mizutani, Y. / Takagi, T. et al. | 1993
- 340
-
Microstructure and tribology of nitrogen implanted molybdenum and tungstenPalmetshofer, L. / Rödhamner, P. et al. | 1993
- 344
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Introduction of nitrogen into metals by high intensity pulsed ion beamsPiekoszewski, J. / Langner, J. / Białoskórski, J. / Kozłowska, B. / Pochrybniak, C. / Werner, Z. / Kopcewicz, M. / Waliś, L. / Ciurapiński, A. et al. | 1993
- 348
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High dose implantation of aluminium into ironReuther, H. / Nikolov, O. / Kruijer, S. / Brand, R.A. / Keune, W. et al. | 1993
- 352
-
An investigation of phase formation by high dose silicon ion implantation into nickelRao, Z. / Williams, J.S. / Pogany, A.P. / Sood, D.K. et al. | 1993
- 357
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Aggregation of iron implants in silverMarest, G. / Jaffrezic, H. / Stanek, J. / Bińczycka, H. et al. | 1993
- 363
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The prediction of phases in ion beam mixed multilayersBaumvol, I.J.R. et al. | 1993
- 370
-
Amorphization of metallic alloys by ion bombardmentZiemann, P. / Miehle, W. / Plewnia, A. et al. | 1993
- 379
-
Amorphous and quasicrystalline AlMn and AlFe phase synthesis by ion beam mixing and related transport propertiesPlenet, J.C. / Perez, A. / Rivory, J. / Laborde, O. et al. | 1993
- 386
-
In situ TEM study of ion induced amorphization at low temperature in Al3TiJaouen, C. / Denanot, M.F. / Rivière, J.P. / Ruault, M.O. / Salomé, M. et al. | 1993
- 390
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On the phase formation during ion beam mixing of Al-TiKyllesbech Larsen, K. / Skovmand, S. / Karpe, N. / Bøttiger, J. / Bormann, R. et al. | 1993
- 394
-
Ion beam mixing of TiC/Fe bilayersGesan, P. / Delafond, J. / Cahoreau, M. / Eymery, J.P. / Garem, H. et al. | 1993
- 398
-
The effect of pre- and postimplantation of carbon on the phase formation and surface mechanical properties of an ion beam mixed Fe-Ti multilayered systemHirvonen, J.-P. / Nastasi, M. / Jervis, T.R. / Zocco, T.G. et al. | 1993
- 404
-
X-ray diffraction study of residual stress modification in Cu/W superlattices irradiated by light and heavy ionsBadawi, K.F. / Goudeau, Ph. / Pacaud, J. / Jaouen, C. / Delafond, J. / Naudon, A. / Gladyszewski, G. et al. | 1993
- 408
-
β phase formation and dissolution under ion irradiation in Cu/Pd thin filmsQuan, Z. / Naundorf, V. / Macht, M.-P. / Wollenberger, H. et al. | 1993
- 412
-
Diffusion-induced grain boundary migration during ion beam mixing of Au/Cu bilayersAlexander, Dale E. / Baldo, P.M. / Rehn, L.E. et al. | 1993
- 412
-
Diffusion-induced grain boundary migration during ion beam mixing Au/Cu bilayersAlexander, D. E. / Baldo, P. M. / Rehn, L. E. et al. | 1993
- 417
-
Mixing effect of Fe/Ni multilayers of overall Fe65Ni35 compositionTosello, C. / Ferrari, F. / Brand, R. / Keune, W. / Marest, G. / El Khakani, M.A. / Parellada, J. / Principi, G. / Lo Russo, S. / Rigato, V. et al. | 1993
- 421
-
Construction of free energy diagram and phase formation by ion mixing in the NiNb systemBai, H.Y. / Zhang, Z.J. / Liu, B.X. et al. | 1993
- 424
-
Amorphization of In/Au-bilayers by low temperature ion beam mixingMiehle, W. / Plewnia, A. / Ziemann, P. et al. | 1993
- 428
-
Effect of ion beam irradiation in amorphous ferromagnetic alloysMatsumoto, N. / Bang, Lu / Maeta, H. / Jakubovics, J.P. / Haruna, K. / Ono, F. et al. | 1993
- 432
-
Surface composition changes of CuBe alloys under Ar+ ion bombardment studied by Auger electron spectroscopyShopov, A.V. / Vichev, R.G. / Karpuzov, D.S. et al. | 1993
- 436
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Ion beam mixing of Fe/Al multilayers: a CEMS studyAlexandre, J.L. / Vasconcellos, M.A.Z. / Hübler, R. / Teixeira, S.R. / Baumvol, I.J.R. et al. | 1993
- 445
-
A comparison of IBAD films for wear and corrosion protection with other PVD coatingsEnsinger, W. / Schröer, A. / Wolf, G.K. et al. | 1993
- 455
-
RBS and channeling study of the correlation between ion beam mixing and amorphization in a binary metal systemBenkoulal, T. / Jagielski, J. / Thomé, L. / Vassent, B. / Kopcewicz, M. et al. | 1993
- 459
-
Low energy 15N and 14N implantation in chromium analysed by NRA and RBSRose, M. / Baumann, H. / Markwitz, A. / Bethge, K. et al. | 1993
- 463
-
Properties of carbon nitride thin films prepared by ion and vapor depositionChubaci, J.F.D. / Sakai, T. / Yamamoto, T. / Ogata, K. / Ebe, A. / Fujimoto, F. et al. | 1993
- 467
-
Corrosion stability of TiN prepared by ion implantation and PVDHeide, N. / Schultze, J.W. et al. | 1993
- 472
-
Hydride formation in zirconium and titanium as a result of low energy ion bombardmentJackman, J.A. / Carpenter, G.J.C. / McCaffrey, J. et al. | 1993
- 476
-
Defect formation and defect-impurity interaction in the hexagonal transition metals Re and LuKoch, H. / Vianden, R. et al. | 1993
- 480
-
Behavior of nitrogen implanted into Zr at high fluenceMiyagawa, Soji / Ikeyama, Masami / Saitoh, Kazuo / Nakao, Setsuo / Sakai, Yasuo / Miyagawa, Yoshiko et al. | 1993
- 485
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High dose carbon implantation in nickelZhang, Z.H. / Chow, L. / Tao, Y.K. / Paschke, K.D. / Chu, W.K. et al. | 1993
- 491
-
Phase transformations in Mo under simultaneous implantation of metal and gas ionsTyumentscv, A.N. / Pinzhin, Yu.P. / Korotaev, A.D. / Behert, A.E. / Savchenko, A.O. / Kolobov, Yu.R. / Bugaev, S.P. / Schanin, P.M. / Yushkov, Y.Yu. et al. | 1993
- 496
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Evolution of profiles of implanted nitrogen in metal bilayersBourdelle, K.K. / Boerma, D.O. et al. | 1993
- 501
-
High dose implantation of yttrium and barium ions into copper: the use of a sacrificial carbon layer for enhanced retentionClapham, L. / Whitton, J.L. / Rück, D. et al. | 1993
- 507
-
MeV implantation into semiconductorsWilliams, J.S. / Elliman, R.G. / Ridgway, M.C. / Jagadish, C. / Ellingboe, S.L. / Goldberg, R. / Petravic, M. / Wong, W.C. / Dezhang, Z. / Nygren, E. et al. | 1993
- 514
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Mechanisms of amorphization in ion implanted crystalline siliconCampisano, S.U. / Coffa, S. / Raineri, V. / Priolo, F. / Rimini, E. et al. | 1993
- 519
-
Channeling and TEM investigations of pulse electron beam annealed GaAs implanted with PbAlberts, H.W. / Gaigher, H.L. / Bredell, L.J. et al. | 1993
- 523
-
The displacement damage produced in Si by 590 MeV protonsAlurralde, M. / Paschoud, F. / Victoria, M. / Gavillet, D. et al. | 1993
- 528
-
Annealing of defects created in silicon by MeV ion implantationSealy, L. / Barklie, R.C. / Brown, W.L. / Jacobson, D.C. et al. | 1993
- 532
-
Ion implantaion damage and annealing in GaSbCallec, R. / Poudoulec, A. / Salvi, M. / L'Haridon, H. et al. | 1993
- 532
-
Ion implantation damage and annealing in GaSbCallec, R. / Poudoulec, A. / Salvi, M. / L'Haridon, H. / Favennec, P.N. / Gauneau, M. et al. | 1993
- 538
-
Dose rate dependence of the ion-beam-induced epitaxial crystallization in siliconHeera, V. / Kögler, R. / Skorupa, W. / Grötzschel, R. et al. | 1993
- 543
-
Swelling of GaSb at low energies (1.3–14.5 keV)Gauneau, M. / Chaplain, R. / Rupert, A. / Toudic, Y. / Riviere, D. / Callec, R. et al. | 1993
- 548
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The effect of defects caused by Xe ion bombardment on the structure of Au/GaAs contactsJároli, Erika / Gyulai, J. / Pécz, B. / Veresegyházy, R. / Radnóczi, G. / Barna, P.B. et al. | 1993
- 552
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Strain distribution in As+ and Sb+ ion implanted and annealed 〈100〉 SiHorvath, Z.E. / Peto, G. / Zsoldos, Eva / Gyulai, J. et al. | 1993
- 552
-
Strain distribution in As^+ and Sb^+ ion implanted and annealed <100> SiHorvath, Z. E. / Peto, G. / Zsoldos, E. / Gyulai, J. et al. | 1993
- 556
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Reduced reverse temperature of ion beam induced amorphization/ crystallization for intermittent beam irradiation of silicon?Kögler, R. / Heera, V. / Skorupa, W. / Glaser, E. / Bachmann, T. / Rück, D. et al. | 1993
- 559
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Dynamics of void formation during implantation of Si under self-annealing conditions and their influence on dopant distributionLullu, G. / Merli, P.G. / Migliori, A. / Brusatin, G. / Drigo, A.V. et al. | 1993
- 564
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In situ detection of rearrangement processes during electron beam annealing of ion implanted InPMaurer, C. / Kallweit, R. / Baumann, H. / Bethge, K. / Krimmel, E.F. et al. | 1993
- 569
-
Distribution of strain in Ge ion implanted silicon measured by high resolution X-ray diffractionPesek, A. / Kastler, P. / Lischka, K. / Palmetshofer, L. et al. | 1993
- 573
-
Defect levels in silicon bombarded with light ionsReisinger, J. / Palmetshofer, I. et al. | 1993
- 578
-
Pulsed UV laser irradiation effect for Sn+-implanted GaAsShibata, H. / Makita, Y. / Ikeda, T. / Hasegawa, M. / Yamada, A. / Niki, S. / Iida, T. / Uekusa, S. et al. | 1993
- 583
-
Generation rate of point defects in silicon irradiated by MeV ionsSvensson, B.G. / Jagadish, C. / Williams, J.S. et al. | 1993
- 587
-
Near-surface defects formed by MeV ion implantation into siliconSayama, H. / Kinomura, A. / Yuba, Y. / Takai, M. et al. | 1993
- 591
-
Annealing behavior of damage in Si-implanted InP studied by piezoelectric detection of photoacoustic signalYoshinaga, Hiroshi / Kawai, Jun / Agui, Takaaki / Uehara, Fumiya / Matsumori, Tokue et al. | 1993
- 596
-
The kinetics of self ion amorphization of siliconGoldberg, R.D. / Elliman, R.G. / Williams, J.S. et al. | 1993
- 603
-
Conductivity changes and impurity-defect interactions in ion-implanted amorphous siliconCoffa, S. / Priolo, F. / Poate, J.M. / Glarum, S.H. et al. | 1993
- 607
-
Photon assisted implantation (PAI)Biró, L.P. / Gyulai, J. / Ryssel, H. / Frey, L. / Kormány, T. / Tuan, N.M. / Horváth, Z.E. et al. | 1993
- 612
-
Analysis of the SiO2 defects originated by phosphorus implantation in MOS structuresBota, S.A. / Montserrat, J. / Pérez-Rodríguez, A. / Morante, J.R. et al. | 1993
- 616
-
Optical investigation of implantation damage in GaAs/AlGaAs quantum wellsKieslich, A. / Straka, J. / Forchel, A. / Stoffel, N.G. et al. | 1993
- 620
-
Paramagnetic defects in silicon irradiated with 40 MeV As ionsDvurechenskii, A.V. / Karanovich, A.A. / Rybin, A.V. / Grötzschel, R. et al. | 1993
- 624
-
X-ray diffraction analysis of damage accumulation due to the nuclear energy loss of 50 keV and 1–2.2 MeV B ions implanted in siliconFabbri, R. / Lulli, G. / Nipoti, R. / Servidori, M. et al. | 1993
- 628
-
TEM study of Si+, Ge+ and C+ implanted siliconKikuchi, Yoshio / Kase, Masataka / Kimura, Mami / Yoshida, Masamichi et al. | 1993
- 632
-
Electrical and optical characterization of defect levels caused in InGaAs by boron ion implantationYamamura, Shin'ichi / Kimura, Tadamasa / Yugo, Shigemi / Saito, Riichiro / Murata, Michio / Kamiya, Takeshi et al. | 1993
- 636
-
Disorder in high-dose, high-energy O- and Si-implanted SiEllingboe, S.L. / Ridgway, M.C. et al. | 1993
- 640
-
Gold and platinum accumulation on buried defects in siliconRohr, P. / Grob, J.I. / Siffert, P. et al. | 1993
- 644
-
Incorporation of In into Si preamorphized with Si, Ge and SnVianden, R. / Gwilliam, R. / Sealy, B. et al. | 1993
- 647
-
Damage distribution in GaAs implanted at elevated temperatureKalitzova, M. / Karpuzov, D. / Pashov, N. / Vitali, G. / Rossi, M. / Scholz, R. et al. | 1993
- 653
-
Optical doping of silicon with erbium by ion implantationPolman, A. / Custer, J.S. / Snoeks, E. / van den Hoven, G.N. et al. | 1993
- 659
-
High energy implantation of 10B and 11B into (100) silicon in channel and in random directionBogen, S. / Gong, L. / Frey, L. / Ryssel, H. et al. | 1993
- 663
-
Radiation defects passivation by neutron irradiation of hydrogen-implanted siliconBolotov, V.V. / Emeksuzyan, V.M. / Plotnikov, G.L. / Vologdin, E.N. et al. | 1993
- 667
-
Negative differential resistance in proton-beam modified siliconBolotov, V.V. / Emeksuzyan, V.M. / Plotnikov, G.L. / Vologdin, E.N. et al. | 1993
- 670
-
The activation energy of electrical conduction of ion beam mixed Sb/n-Si Schottky contactsMalherbe, J.B. / Weimer, K.P. / Friedland, E. / Bredell, L.J. et al. | 1993
- 674
-
Codoping effects of As and Xe on ion-beam-induced epitaxial crystallization of SiHasegawa, Masataka / Kobayashi, Naoto / Hayashi, Nobuyuki et al. | 1993
- 679
-
An explanation of transient-enhanced diffusion and electrical activation of boron in crystalline silicon during postimplantation annealingJäger, H.U. et al. | 1993
- 683
-
Ion implantation of zirconium and hafnium in InP and GaAsKnecht, A. / Kuttler, M. / Scheffler, H. / Wolf, T. / Bimberg, D. / Kräutle, H. et al. | 1993
- 687
-
Formation and characterization of shallow junctions by through-film ion implantation in GaAsShen, H.L. / Xu, H.L. / Xia, G.Q. / Zou, S.C. / Zhou, Z.Y. / Jiang, B.Y. / Liu, X.H. et al. | 1993
- 691
-
Properties of Mn+-implanted GaAsNiki, S. / Makita, Y. / Yamada, A. / Iida, T. / Obara, A. / Tanoue, H. / Kitahara, T. / Aoki, K. / Katsuwada, N. et al. | 1993
- 697
-
Ion implanted arsenic in siliconLarsen, Arne Nylandsted / Christensen, Birgit / Christensen, Peter H. / Shiryaev, Sergey Yu. et al. | 1993
- 702
-
Structural characterization of nitrogen ion implantation into silicon for sensor technologyRomano-Rodriguez, A. / El-Hassani, A. / Samitier, J. / Perez-Rodriguez, A. et al. | 1993
- 702
-
Structural characterisation of nitrogen ion implantation into silicon for sensor technologyRomano-Rodríguez, A. / El-Hassani, A. / Samitier, J. / Pérez-Rodríguez, A. / Martínez, S. / Morante, J.R. / Esteve, J. / Montserrat, J. et al. | 1993
- 706
-
Structural and optical characterization of implanted and annealed semi-insulating GaAsTrudeau, Yves B. / Arès, R. / Kajrys, G.E. / Gagnon, G. / Brebner, J.L. / Jouanne, M. et al. | 1993
- 711
-
Defect production, annealing and electrical activation in Si+ implanted InPWendler, E. / Müller, P. / Bachmann, T. / Wesch, W. et al. | 1993
- 716
-
High energy ion implantation in GaAsWesch, W. / Wendler, E. et al. | 1993
- 721
-
Low temperature recrystallization of ion implanted InPMüller, P. / Wesch, W. / Solovyev, V.S. / Gaiduk, P.I. / Wendler, E. / Komarov, F.F. / Götz, G. et al. | 1993
- 729
-
Implantation induced changes in quantum well structuresKalish, R. / Feldman, L.C. / Jacobson, D.C. / Weir, B.E. / Merz, J.L. / Kramer, L.-Y. / Doughty, K. / Stone, S. / Lau, K.-K. et al. | 1993
- 734
-
Intermixing of MeV ion-implanted and annealed AlGaAs/GaAs superlatticesTamura, M. / Hashimoto, A. / Saito, T. et al. | 1993
- 742
-
Ion bombardment of SiO2/Si and Si measured by in situ X-ray reflectivityChason, E. / Mayer, T.M. / McIlroy, D. / Matzke, C.M. et al. | 1993
- 747
-
Comparison of the effects of ion implantation induced interdiffusion in GaAs/AlGaAs and InGaAs/GaAs single quantum wellsBradley, I.V. / Gillin, W.P. / Homewood, K.P. / Grey, R. et al. | 1993
- 751
-
Regrowth and strain recovery of Sb implanted Si1−xGex strained layersAtzmon, Z. / Eizenberg, M. / Zolotoyabko, E. / Hong, Stella Q. / Mayer, J.W. / Schäffler, F. et al. | 1993
- 755
-
Ion-beam-induced simultaneous epitaxial growth of α- and cubic FeSi2 in Si (100) at 320°CDesimoni, J. / Behar, M. / Bernas, H. / Lin, X.W. / Liliental-Weber, Z. / Washburn, J. et al. | 1993
- 759
-
Influence of impurities on ion beam induced TiSi2 formationDehm, C. / Raum, B. / Kasko, I. / Ryssel, H. et al. | 1993
- 764
-
Ion beam synthesis of buried CrSi2 layersDudda, Chr. / Mantl, S. / Dieker, Ch. / Dolle, M. / Lüth, H. et al. | 1993
- 768
-
The fabrication of epitaxial GexSi1−x layers by ion implantationElliman, R.G. / Wong, W.C. et al. | 1993
- 773
-
Ion implantation and annealing of Fe for semi-insulating layers formation in InPGasparotto, A. / Carnera, A. / Arzenton, G. / Tromby, M. / Pellegrino, S. / Vidimari, F. / Caldironi, M. et al. | 1993
- 777
-
Formation of relaxed Si1−xGex layers on SIMOX by high-dose 74Ge ion implantationHolländer, B. / Mantl, S. / Michelsen, W. / Mesters, S. et al. | 1993
- 781
-
A comparison of shallow and deep iron silicide layers fabricated by ion beam synthesisHunt, T.D. / Reeson, K.J. / Gwilliam, R.M. / Homewood, K.P. / Wilson, R.J. / Sealy, B.J. / Meekison, C.D. / Booker, G.R. / Oberschachtsiek, P. et al. | 1993
- 786
-
Effect of ion-beam mixing temperature on cobalt silicide formationKasko, I. / Dehm, C. / Frey, L. / Ryssel, H. et al. | 1993
- 790
-
Low-energy ion-beam-induced epitaxial crystallization of GaAsKobayashi, Naoto / Hasegawa, Masataka / Hayashi, Nobuyuki et al. | 1993
- 795
-
On the ion beam synthesis of GaAsSb alloysKozanecki, A. / Groetzschel, R. et al. | 1993
- 798
-
X-ray and channeling analysis of ion implanted gallium arsenideKozanecki, A. / Scaly, B.J. / Gwilliam, R. / Kidd, P. et al. | 1993
- 802
-
High-dose implantations of Al into Si(111) and Si(100)Daley, Richard S. / Musket, Ronald G. et al. | 1993
- 807
-
High-energy high-dose Ni irradiation of SOI structuresLindner, J.K.N. / Kersten, P. / te Kaat, E.H. / Henke, S. et al. | 1993
- 813
-
Thin buried oxide in implanted siliconMeda, L. / Bertoni, S. / Cerofolini, G.F. / Spaggiari, C. et al. | 1993
- 818
-
Epitaxial metal island formation on Si(111) by cluster deposition from a beamJonk, P. / Hector, R. / Wittenberg, F. / Meiwes-Broer, K.H. et al. | 1993
- 822
-
Direct formation of device worthy thin film SIMOX structures by low energy oxygen implantationNejim, A. / Li, Y. / Marsh, C.D. / Hemment, P.L.F. / Chater, R.J. / Kilner, J.A. / Booker, G.R. et al. | 1993
- 827
-
Reduction of lateral ion straggling for the fabrication of intermixed GaAs/AlGaAs quantum wiresPrins, F.E. / Lehr, G. / Burkard, M. / Schweizer, H. / Smith, G.W. et al. | 1993
- 831
-
Growth and electrical properties of ion implanted FeSi2 on (111)SiRadermacher, K. / Mantl, S. / Gerthsen, D. / Dieker, Ch. / Lüth, H. et al. | 1993
- 835
-
MeV In-ion implantation for electrical isolation of p+-InPRidgway, M.C. / Elliman, R.G. / Hauser, N. et al. | 1993
- 838
-
Buried oxide layers formed by oxygen implantation on screened oxide silicon wafers: structural analysisSamitier, J. / Martinez, S. / Pérez-Rodríguez, A. / Garrido, B. / Morante, J.R. / Papon, A.M. / Margail, J. et al. | 1993
- 842
-
Residual stress during local SIMOX process: Raman measurement and simulationSeidl, A. / Takai, M. / Sayama, H. / Haramura, K. et al. | 1993
- 846
-
High-dose mixed Ga/As and Ga/P ion implantations in silicon single crystalsShiryaev, S.Yu. / Nylandsted Larsen, A. et al. | 1993
- 851
-
Segregation of dopants in ion beam synthesised CoSi2 layersReeson, Karen J. / Hunt, Tim D. / Gwilliam, Russell M. / Sealy, Brian J. / Douglas Meekison, C. / Roger Booker, G. et al. | 1993
- 857
-
Concentration profiles of high dose MeV oxygen implanted siliconTouhouche, K. / Jackman, J. / Yelon, A. et al. | 1993
- 862
-
Precipitation kinetics in silicon during ion beam synthesis of buried silicide layersTrinkaus, H. / Mantl, S. et al. | 1993
- 867
-
Ion beam synthesis of ternary (Fe1−xCox)SiWieser, E. / Panknin, D. / Skorupa, W. / Querner, G. / Henrion, W. / Albrecht, J. et al. | 1993
- 867
-
Ion beam synthesis of ternary (Fe~1~-~xCo~x)Si~2Wieser, E. / Panknin, D. / Skorupa, W. / Querner, G. et al. | 1993
- 872
-
Production and in-situ analysis of microscale oxide structures in silicon by oxygen implantationWittmaack, K. et al. | 1993
- 877
-
Effect of the incidence geometry on the ion induced Ni-silicides surface compositional modificationsVerucchi, R. / Scorzoni, C. / Valeri, S. et al. | 1993
- 881
-
Interface structure during ion-beam-induced epitaxial crystallization of siliconCuster, J.S. / Battaglia, A. / Saggio, M. / Priolo, F. et al. | 1993
- 889
-
Ion implantation effects in silicon carbideMcHargue, Carl J. / Williams, J.M. et al. | 1993
- 895
-
Ion beam synthesis of buried metallic and semiconducting silicidesMantl, S. et al. | 1993
- 901
-
Lattice damage in ion implanted silicon-germanium alloysHaynes, T.E. / Holland, O.W. et al. | 1993
- 906
-
Ion beam synthesis of CoSi2 in Si1−xGex alloy layers with different Ge concentrationsLauwers, A. / Maex, K. / Vanhellemont, J. / Caymax, M. / Poortmans, J. / Van Rossum, M. et al. | 1993
- 910
-
Ion implantation of isoelectronic impurities into InPYamada, A. / Makita, Y. / Mayer, K.M. / Iida, T. / Yoshinaga, H. / Kimura, S. / Niki, S. / Shibata, H. / Uekusa, S. / Matsumori, T. et al. | 1993
- 915
-
Influence of Al and P doping on optical and electrical properties of ion beam synthesized SiCBattaglia, A. / Derst, G. / Kalbitzer, S. et al. | 1993
- 919
-
Ion implantation and rapid thermal annealing of AuCdxHg1−xTe structuresGerasimenko, N.N. / Nesterov, A.A. / Vasil'ev, V.V. et al. | 1993
- 924
-
Redistribution of magnesium in InAs during post-implantation annealingGerasimenko, N.N. / Myasnikov, A.M. / Obodnikov, V.I. / Safronov, L.N. et al. | 1993
- 927
-
Ion implantation doping of polycrystalline SiC thin films prepared by PECVDKrötz, G. / Hellmich, W. / Müller, G. / Derst, G. / Kalbitzer, S. et al. | 1993
- 931
-
Composition changes in Ar+ and e−-bombarded SiC: an attempt to distinguish ballistic and chemically guided effectsMiotello, Antonio / Calliari, Lucia / Kelly, Roger / Laidani, Nadhira / Bonelli, Marco / Guzman, Luis et al. | 1993
- 938
-
Disorder creation and annealing in Hg implanted CdTeTraverse, A. / Leo, G. / Alves, J.G. / Almeida, P.M. / Da Silva, M.F. / Soares, J.C. et al. | 1993
- 943
-
Polytype transitions in ion implanted silicon carbidePezoldt, J. / Kalnin, A.A. / Moskwina, D.R. / Savelyey, W.D. et al. | 1993
- 949
-
Thermal stability of Si/CoSi2 multiple layer systemsSchippel, S. / Witzmann, A. / Lindner, J.K.N. et al. | 1993
- 957
-
The contribution of ion-beam techniques to the physics and technology of amorphous semiconductorsMüller, Gerhard et al. | 1993
- 966
-
Environments of ion-implanted dopants in amorphous silicon at various stages of annealingGreaves, G.N. / Dent, A.J. / Dobson, B.R. / Kalbitzer, S. / Müller, G. et al. | 1993
- 973
-
In situ analysis of irradiation-induced crystal nucleation in amorphous silicon: a “microscope” for thermodynamic processes in nucleationShin, Jung H. / Atwater, Harry A. et al. | 1993
- 978
-
Properties of fully implanted amorphous SixC1−x: H alloysCompagnini, G. / Calcagno, L. / Foti, G. et al. | 1993
- 982
-
Structural relaxation in amorphous silicon prepared by ion implantationHiroyama, Yuichi / Motooka, Teruaki / Tokuyama, Takashi / Wei, Long / Tanigawa, Shoichiro et al. | 1993
- 986
-
Recrystallization of In and P implanted InPKringhøj, P. / Shiryaev, S.Yu. et al. | 1993
- 990
-
Enhanced solid phase epitaxial recrystallization of amorphous silicon due to nickel silicide precipitation resulting from ion implantation and annealingKuznetsov, A.Yu. / Khodos, I.I. / Mordkovich, V.N. / Vyatkin, A.F. / Chichenin, N.G. et al. | 1993
- 994
-
Ion-beam-induced epitaxy in B-implanted silicon preamorphized with Ge ionsKuriyama, K. / Takahashi, Hiromi / Shimoyama, K. / Hayashi, N. / Hasegawa, M. / Kobayashi, N. et al. | 1993
- 998
-
Theory of diffusion processes in implanted siliconAntoncilk, E. et al. | 1993
- 1002
-
Studies of reactive ion etching using Colutron hot filament dc plasma ion sourcesBello, I. / Chang, W.H. / Feng, X.H. / Lau, W.M. et al. | 1993
- 1006
-
Study of ion-beam-induced epitaxy in Si by slow positron annihilation and RBS channelingHayashi, N. / Suzuki, R. / Watanabe, H. / Sakamoto, I. / Kobayashi, N. / Mikado, T. / Yamazaki, T. / Kuriyama, K. et al. | 1993
- 1010
-
Dry and wet etching properties of thermally grown silicon dioxide layer after N+ ion implantation and annealingKudo, Kazuhiro / Kuniyoshi, Shigekazu / Tanaka, Kuniaki et al. | 1993
- 1014
-
X-ray diffraction, Rutherford backscattering and channeling measurements on Pb inclusions in SiMilants, K. / Hendrickx, P. / Pattyn, H. et al. | 1993
- 1021
-
The multi-aspects of ion beam modification of insulatorsDavenas, J. / Thevenard, P. et al. | 1993
- 1028
-
Transport phenomena in implanted electroactive polymersMoliton, André / Moreau, Christian / Moliton, Jean-Pierre / Froyer, Gérard et al. | 1993
- 1036
-
Ion implantation effects in Al2O3: hydration and optical absorptionArnold, George W. et al. | 1993
- 1040
-
Defect generation and healing in SiC powder subjected to Ar implantationHeuberger, M. / Telle, R. / Petzow, G. et al. | 1993
- 1045
-
Heat-induced versus particle-beam-induced chemistry in polyimideMarletta, Giovanni / Iacona, Fabio et al. | 1993
- 1050
-
Improvement of surface properties of polymers by ion implantationÖchsner, R. / Kluge, A. / Zechel-Malonn, S. / Gong, L. / Ryssel, H. et al. | 1993
- 1055
-
Chemical and energy deposition effects of keV ions on the adhesion of Cu films onto polymersTegen, N. / Wartusch, J. / Merkel, K.-H. et al. | 1993
- 1059
-
RBS study of oxidation processes in polypropylene and polyethylene implanted with fluorine ionsHnatowicz, V. / Havránek, V. / Kvítek, J. / Peřina, V. / Švorčík, V. / Rybka, V. et al. | 1993
- 1063
-
Infrared analysis of the irradiation effects in aromatic polyimide filmsXu, D. / Xu, X.L. / Du, G.D. / Wang, R. / Zou, S.C. / Liu, X.H. et al. | 1993
- 1067
-
Surface modification of polystyrene for improving wettability by ion implantationSuzuki, Yoshiaki / Kusakabe, Masahiro / Iwaki, Masaya et al. | 1993
- 1072
-
Electrical and optical investigations of carbon clusters formed in organic films by ion implantationIizuka, Masaaki / Kuniyoshi, Shigekazu / Kudo, Kazuhiro / Tanaka, Kuniaki et al. | 1993
- 1076
-
Modification of conducting polymers by low energy reactive ion beams and their chemical effectsJung, K.G. / Schultze, J.W. / Buchal, Ch. et al. | 1993
- 1080
-
Characterization of Ag- and W-implanted polyimide filmsIwaki, Masaya / Yabe, Katsumasa / Fukuda, Atsushi / Watanabe, Hiroshi / Itoh, Akira / Takeda, Masafumi et al. | 1993
- 1085
-
On the influence of low energy tantalum ion implantation on indentation fracture and hardness of α-alumina single crystalsEnsinger, W. / Nowak, R. et al. | 1993
- 1091
-
TEM-microstructural investigations of ion beam modified ceramics with respect to their macroscopic propertiesFischer, W. / Wolf, G.K. / Ruoff, H. / Katerbau, K.-H. et al. | 1993
- 1097
-
Ion implantation and ion beam assisted deposition onto cemented tungsten carbide and syalonGuzman, L. / Scotoni, I. / Miotello, A. / Elena, M. / Kothari, D.C. et al. | 1993
- 1101
-
Microstructural characterization of zirconia films produced by the dual ion beam deposition techniqueHuang, N.K. / Colligon, J.S. / Kheyrandish, H. / Tang, Y.S. et al. | 1993
- 1104
-
Ion beam induced epitaxial crystallization of sapphireZhou, W. / Sood, D.K. / Elliman, R.G. / Ridgway, M.C. et al. | 1993
- 1109
-
Ion irradiation-induced nano-scale polycrystallization of intermetallic and ceramic materialsWang, L.M. / Birtcher, R.C. / Ewing, R.C. et al. | 1993
- 1114
-
High energy heavy ion irradiation effects in α-Al2O3Canut, B. / Ramos, S.M.M. / Thevenard, P. / Moncoffre, N. / Benyagoub, A. / Marest, G. / Meftah, A. / Toulemonde, M. / Studer, F. et al. | 1993
- 1119
-
Ion beam modification of aromatic polymersShukushima, Satoshi / Nishikawa, Shinya / Matsumoto, Yasuyo / Hibino, Yutaka et al. | 1993
- 1123
-
Electrical conductivity in niobium implanted TiO2 rutileRamos, S.M.M. / Canut, B. / Brenier, R. / Gea, L. / Romana, L. / Brunel, M. / Thevenard, P. et al. | 1993
- 1128
-
Ion beam irradiation effect on solubility of spin-on glass to methanolYanagisawa, Junichi / Koh, Young-Bum / Gamo, Kenji et al. | 1993
- 1135
-
Waveguides and waveguide lasers fabricated by ion implantationChandler, P.J. / Townsend, P.D. et al. | 1993
- 1143
-
Processing high-T c superconductors with GeV heavy ionsMarwick, A.D. / Civale, L. / Krusin-Elbaum, L. / Wheeler, R. / Thompson, J.R. / Worthington, T.K. / Kirk, M.A. / Sun, Y.R. / Kerchner, H.R. / Holtzberg, F. et al. | 1993
- 1150
-
Ion implanted optical waveguides in KNbO3 for efficient blue light second harmonic generationFleuster, M. / Buchal, Ch. / Fluck, D. / Günter, P. et al. | 1993
- 1154
-
Composition changes in bombarded oxides and carbides: the distinction between ballistic, chemically guided, and chemically random behaviorKelly, Roger / Bertóti, Imre / Miotello, Antonio et al. | 1993
- 1164
-
Irradiation experiments on HTSC thin filmsKroener, T. / Linker, G. / Meyer, O. / Strehlau, B. / Massing, S. et al. | 1993
- 1168
-
XPS studies on the charge states of Cr and Cu atoms implanted into α-Al2O3 and MgO single crystalsFutagami, T. / Aoki, Y. / Yoda, O. / Nagai, S. / Rück, D.M. et al. | 1993
- 1171
-
Modification of the optical spectra of glass by metal ion implantationYao, X.Y. / Fojas, P.B. / Brown, I.G. / Rubin, M.D. et al. | 1993
- 1174
-
Quantitative investigations of the removal of glass material by low energy ion beams with the use of optical interferometryWeiser, M. et al. | 1993
- 1178
-
Hydrogen assisted crystallisation of strontium titanateSimpson, T.W. / Mitchell, I.V. et al. | 1993
- 1182
-
Ion-implanted optical waveguides in zinc tungstateRodman, M.J. / Chandler, P.J. / Townsend, P.D. et al. | 1993
- 1185
-
Incorporation of Nd implanted in strontiumtitanate studied with photoluminescenceTenner, M.G. / Kessener, Y.A.R.R. / Overwijk, M.H.F. et al. | 1993
- 1189
-
Zirconium implantation into oxygen implanted ironTakahashi, Jun / Terashima, Keiichi / Iwaki, Masaya et al. | 1993
- 1192
-
Substrate effects in silver-implanted glassesMazzoldi, P. / Tramontin, L. / Boscolo-Boscoletto, A. / Battaglin, G. et al. | 1993