High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications (English)
- New search for: Goh, Youngin
- New search for: Hwang, Junghyeon
- New search for: Kim, Minki
- New search for: Jung, Minhyun
- New search for: Lim, Sehee
- New search for: Jung, Seong-Ook
- New search for: Jeon, Sanghun
- New search for: Goh, Youngin
- New search for: Hwang, Junghyeon
- New search for: Kim, Minki
- New search for: Jung, Minhyun
- New search for: Lim, Sehee
- New search for: Jung, Seong-Ook
- New search for: Jeon, Sanghun
In:
2021 IEEE International Electron Devices Meeting (IEDM)
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17.2.1-17.2.4
;
2021
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ISBN:
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ISSN:
- Conference paper / Electronic Resource
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Title:High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications
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Contributors:Goh, Youngin ( author ) / Hwang, Junghyeon ( author ) / Kim, Minki ( author ) / Jung, Minhyun ( author ) / Lim, Sehee ( author ) / Jung, Seong-Ook ( author ) / Jeon, Sanghun ( author )
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Published in:2021 IEEE International Electron Devices Meeting (IEDM) ; 17.2.1-17.2.4
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Publisher:
- New search for: IEEE
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Publication date:2021-12-11
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Size:1416859 byte
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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A new FDSOI spin qubit platform with 40nm effective control pitchBedecarrats, T. / Paz, B. Cardoso / Diaz, B. Martinez / Niebojewski, H. / Bertrand, B. / Rambal, N. / Comboroure, C. / Sarrazin, A. / Boulard, F. / Guyez, E. et al. | 2021
- 1
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Welcome from the General Chair| 2021
- 1
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Award Presentations [Various awards]| 2021
- 1
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EDS Award Information for the 2021 IEDM Program 2021 IEEE/EDS Fellows| 2021
- 1
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[Copyright notice]| 2021
- 1
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Lifelong Learning with Monolithic 3D Ferroelectric Ternary Content-Addressable MemoryDutta, S. / Khanna, A. / Ye, H. / Sharifi, M.M. / Kazemi, A. / Jose, M.San / Aabrar, K.A. / Mir, J.G. / Niemer, M. / Hu, X.S. et al. | 2021
- 1
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Co-design In High Performance Computing SystemsMoreno, Jaime H. / Wen, Sophia et al. | 2021
- 1
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Plenary Session| 2021
- 1
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Fine-Pitch (≤ 10 µm) Nb-based Superconducting Silicon Interconnect Fabric for Large-Scale Quantum System ApplicationYang, Yu-Tao / Hu, Chaowei / Zhang, Peng / Ren, Haoxiang / Ni, Ni / Wang, Kang L. / Iyer, Subramanian S. et al. | 2021
- 1
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Conference Highlights| 2021
- 1
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3D Stackable Broadband Photoresponsive InGaAs Biristor Neuron for a Neuromorphic Visual System with Near 1 V OperationHan, Joon-Kyu / Sim, Jaeho / Geum, Dae-Myeong / Kim, Seong Kwang / Yu, Ji-Man / Kim, Jongmin / Kim, Sanghyeon / Choi, Yang-Kyu et al. | 2021
- 1
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Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND ScalingVerreck, D. / Arreghini, A. / Schanovsky, F. / Rzepa, G. / Stanojevic, Z. / Mitterbauer, F. / Kernstock, C. / Baumgartner, O. / Karner, M. / Van den bosch, G. et al. | 2021
- 1
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Fast Switching Down to 3.5 ns in Sub-5-nm Magnetic Tunnel Junctions Achieved by Engineering Relaxation TimeJinnai, B. / Igarashi, J. / Shinoda, T. / Watanabe, K. / Fukami, S. / Ohno, H. et al. | 2021
- 1
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Executive Committee| 2021
- 1
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Experimental Demonstration of Non-volatile Capacitive Crossbar Array for In-memory ComputingLuo, Yuan-Chun / Hur, Jae / Wang, Tzu-Han / Lu, Anni / Li, Shaolan / Khan, Asif Islam / Yu, Shimeng et al. | 2021
- 1
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Gate-Last I/O Transistors based on Stacked Gate-All-Around Nanosheet Architecture for Advanced Logic TechnologiesBhuiyan, M. / Kim, M. / Zhou, H. / Lo, H. / Siddiqui, S. / Stolfi, M. / Guarini, T. / Pujari, R. / Davey, E. / Stuckert, E. et al. | 2021
- 1.1.1
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The Smallest Engine Transforming Humanity: The Past, Present, and FutureKim, Kinam et al. | 2021
- 1.2.1
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Creating the Future: Augmented Reality, the next Human-Machine InterfaceAbrash, Michael et al. | 2021
- 1.3.1
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Quantum Computing TechnologyRiel, H. et al. | 2021
- 2.1.1
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28nm CIS-Compatible Embedded STT-MRAM for Frame Buffer MemoryKim, D. S. / Bak, J. H. / Ko, S. P. / Lim, W. C. / Shin, H. C. / Lee, J. H. / Park, J. H. / Jeong, J. H. / Lee, J. M. / Kai, T. et al. | 2021
- 2.2.1
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A 20Mb Embedded STT-MRAM Array Achieving 72% Write Energy Reduction with Self-termination Write Schemes in 16nm FinFET Logic ProcessIto, T. / Saito, T. / Taito, Y. / Sonoda, K. / Watanabe, G. / Matsubara, K. / Kanda, A. / Shimoi, T. / Takeda, K. / Kono, T. et al. | 2021
- 2.3.1
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First Experimental Demonstration of MRAM Data Scrubbing: 80 Mb MRAM with 40 nm junctions for Last Level Cache ApplicationsWu, H. / Katragadda, V. / Evarts, E. / Edwards, E. / Southwick, R. / Dutta, A. / Lauer, G. / Mehta, V. / Johnson, R. / van der Straten, O. et al. | 2021
- 2.4.1
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Design Challenges and Solutions of Emerging Nonvolatile Memory for Embedded ApplicationsChih, Yu-Der / Chou, Chung-Cheng / Shih, Yi-Chun / Lee, Chia-Fu / Khwa, Win-San / Wu, Chun-Yu / Shen, Kuei-Hung / Chu, Wen-Ting / Chang, Meng-Fan / Chuang, Harry et al. | 2021
- 2.5.1
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2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junctionHu, G. / Lauer, G. / Sun, J. Z. / Hashemi, P. / Safranski, C. / Brown, S. L. / Buzi, L. / Edwards, E. R. J. / D'Emic, C. P. / Galligan, E. et al. | 2021
- 3.1.1
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CFET Design Options, Challenges, and Opportunities for 3D IntegrationLiebmann, L. / Smith, J. / Chanemougame, D. / Gutwin, P. et al. | 2021
- 3.2.1
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3D sequential integration: applications and associated key enabling modules (design & technology)Batude, P. / Billoint, O. / Thuries, S. / Malinge, P. / Fenouillet-Beranger, C. / Peizerat, A. / Sicard, G. / Vivet, P. / Reboh, S. / Cavalcante, C. et al. | 2021
- 3.3.1
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Inspection and metrology challenges for 3 nm node devices and beyondShohjoh, T. / Ikota, M. / Isawa, M. / Lorusso, G. F. / Horiguchi, N. / Briggs, B. / Mertens, H. / Bogdanowicz, J. / De Bisschop, P. / Charley, A.-L. et al. | 2021
- 3.4.1
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Heterogeneous Integration Enabled by the State-of-the-Art 3DIC and CMOS Technologies: Design, Cost, and ModelingLin, X.-W. / Moroz, V. / Xu, X. / Gao, Y. / Rennie, D. / Asenov, P. / Smidstrup, S. / Sherlekar, D. / Qin, Z. / Fang, T. et al. | 2021
- 3.5.1
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Design for 3D Stacked CircuitsFranzon, P. / Davis, W. / Rotenberg, E. / Stevens, J. / Lipa, S. / Nigussie, T. / Pan, H. / Baker, L. / Schabel, J. / Dey, S. et al. | 2021
- 3.6.1
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3D SoC integration, beyond 2.5D chipletsBeyne, Eric / Milojevic, Dragomir / Van der Plas, Geert / Beyer, Gerald et al. | 2021
- 3.7.1
-
Foundry Perspectives on 2.5D/3D Integration and RoadmapYu, Douglas C. H. / Wang, Chuei-Tang / Hsia, Harry et al. | 2021
- 4.1.1
-
Overview of design challenges for automotive radar MMICsMartinez-Vazquez, M. et al. | 2021
- 4.2.1
-
Monolithically Integrated Self-Biased Circulator for mmWave T/R MMIC ApplicationsCui, Yongjie / Chen, Hung-Yu / Chen, Shuoqi / Linkhart, Douglas / Tan, Haosen / Wu, Jiangbin / Yoon, Soack / Geiler, Michael / Geiler, Anton / Beam, Edward et al. | 2021
- 4.3.1
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Green Poly-Si TFTs: RF Breakthroughs $(f_{\mathrm{T}}/f_{\max}= 63.6/30\ \text{GHz})$ by an Ingenious Process Design for IoT Modules on EverythingYe, Y.-J. / Yu, P.-H. / Lee, C.-K. / Li, P.-W. / Chen, K.-M. / Huang, G.-W. / Lin, H.-C. et al. | 2021
- 4.4.1
-
Phase-Change Material RF Switches and Monolithic Integration in 180 nm RF-SOI CMOS ProcessesSlovin, Gregory / El-Hinnawy, Nabil / Moen, Kurt / Howard, David et al. | 2021
- 4.5.1
-
Beyond 8 THz Displacement-field Nano-switches for 5G and 6G CommunicationsNikoo, M. Samizadeh / Wang, T. / Sohi, P. / Zhu, M. / Qaderi, F. / Khadar, R. A. / Floriduz, A. / Ionescu, A. M. / Matioli, E. et al. | 2021
- 5.1.1
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200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICsCosnier, T. / Syshchyk, O. / De Jaeger, B. / Geens, K. / Cingu, D. / Fabris, Elena / Borga, M. / Vohra, A. / Zhao, M. / Bakeroot, B. et al. | 2021
- 5.2.1
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A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTsLyu, Gang / Wei, Jin / Song, Wenjie / Zheng, Zheyang / Zhang, Li / Zhang, Jie / Cheng, Yan / Feng, Sirui / Ng, Yat Hon / Chen, Tao et al. | 2021
- 5.3.1
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SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETsZhang, Li / Zheng, Zheyang / Cheng, Yan / Ng, Yat Hon / Feng, Sirui / Song, Wenjie / Chen, Tao / Chen, Kevin J. et al. | 2021
- 5.4.1
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GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and >50 mA/mm on-currentRaj, A. / Krishna, A. / Hatui, N. / Romanczyk, B. / Wurm, C. / Guidry, M. / Hamwey, R. / Pakala, N. / Keller, S. / Mishra, U. K. et al. | 2021
- 5.5.1
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Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT): A New GaN Power Switch up to 10 kVXiao, M. / Ma, Y. / Du, Z. / Pathirana, V. / Cheng, K. / Xie, A. / Beam, E. / Cao, Y. / Udrea, F. / Wang, H. et al. | 2021
- 5.6.1
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Emerging circuit techniques to utilize wide-bandgap semiconductors in compact, lightweight, and efficient power convertersPilawa-Podgurski, Robert C.N. et al. | 2021
- 6.1.1
-
Trap Capture and Emission Dynamics in Ferroelectric Field-Effect Transistors and their Impact on Device Operation and ReliabilityTasneem, Nujhat / Wang, Zheng / Zhao, Zijian / Upadhyay, Navnidhi / Lombardo, Sarah / Chen, Hang / Hur, Jae / Triyoso, Dina / Consiglio, Steven / Tapily, Kanda et al. | 2021
- 6.2.1
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Improved Multi-bit Storage Reliablity by Design of Ferroelectric Modulated Anti-ferroelectric MemoryXu, Yannan / Yang, Yang / Zhao, Shengjie / Gong, Tiancheng / Jiang, Pengfei / Wang, Yuan / Yuan, Peng / Dang, Zhiwei / Chen, Yuting / Lv, Shuxian et al. | 2021
- 6.3.1
-
Accurate Picture of Cycling Degradation in HfO2-FeFET Based on Charge Trapping Dynamics Revealed by Fast Charge Centroid AnalysisIchihara, Reika / Higashi, Yusuke / Suzuki, Kunifumi / Takano, Keisuke / Yoshimura, Yoko / Hamai, Takamasa / Takahashi, Kota / Matsuo, Kazuhiro / Nakasaki, Yasushi / Suzuki, Masamichi et al. | 2021
- 6.4.1
-
Improving Edge Dead Domain and Endurance in Scaled HfZrOx FeRAMLin, Yu-De / Yeh, Po-Chun / Tang, Ying-Tsan / Su, Jian-Wei / Yang, Hsin-Yun / Chen, Yu-Hao / Lin, Chih-Pin / Yeh, Po-Shao / Chen, Jui-Chin / Tzeng, Pei-Jer et al. | 2021
- 6.5.1
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Development of spatial nearest-neighbor analysis and Clustering/Gibbs statistical methodology for filament percolation in dielectric breakdown and forming process in ReRAM devicesWu, Ernest / Stellari, Franco / Ando, Takashi / Song, Peilin / Frank, Martin et al. | 2021
- 6.6.1
-
Reliability Characterization for Advanced DRAM using HK/MG + EUV Process TechnologyLee, S. / Kim, G.-J. / Lee, N-H. / Lee, KW. / Woo, BW. / Jin, J. / Kim, JG. / Lee, YS. / Kim, HS. / Pae, S. et al. | 2021
- 7.1.1
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Advancing 2D Monolayer CMOS Through Contact, Channel and Interface EngineeringO'Brien, K. P. / Dorow, C. J. / Penumatcha, A. / Maxey, K. / Lee, S. / Naylor, C. H. / Hsiao, A. / Holybee, B. / Rogan, C. / Adams, D. et al. | 2021
- 7.2.1
-
Antimony Semimetal Contact with Enhanced Thermal Stability for High Performance 2D ElectronicsChou, Ang-Sheng / Wu, Tong / Cheng, Chao-Ching / Zhan, Shun-Siang / Ni, I-Chih / Wang, Shih-Yun / Chang, Yu-Chen / Liew, San-Lin / Chen, Edward / Chang, Wen-Hao et al. | 2021
- 7.3.1
-
Sub-200 Ω·µm Alloyed Contacts to Synthetic Monolayer MoS2Kumar, Aravindh / Schauble, Kirstin / Neilson, Kathryn M. / Tang, Alvin / Ramesh, Pranav / Wong, H.-S. Philip / Pop, Eric / Saraswat, Krishna et al. | 2021
- 7.4.1
-
Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm LgWu, Xiangyu / Cott, Daire / Lin, Zaoyang / Shi, Yuanyuan / Groven, Benjamin / Morin, Pierre / Verreck, Devin / Smets, Quentin / Medina, Henry / Sutar, Surajit et al. | 2021
- 7.5.1
-
Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFETXiong, Xiong / Tong, Anyu / Wang, Xin / Liu, Shiyuan / Li, Xuefei / Huang, Ru / Wu, Yanqing et al. | 2021
- 8.1.1
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Multiscale Modeling of Al0.7Sc0.3N-based FeRAM: the Steep Switching, Leakage and Selector-free ArrayLiu, C. / Wang, Q. / Yang, W. / Cao, T. / Chen, L. / Li, M. / Liu, F. / Loke, D. K. / Kang, J. / Zhu, Y. et al. | 2021
- 8.2.1
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Computational Study for Spin-orbit Torque Magnetic Random Access MemoryJiang, Yuhao / Zhou, Hangyu / Zhu, Daoqian / Wang, Chao / Wang, Zhaohao / Zhao, Weisheng et al. | 2021
- 8.3.1
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First Theoretical Modeling of the Bandgap-Engineered Oxynitride Tunneling Dielectric for 3D Flash Memory Devices Starting from the Ab Initio Calculation of the Band Diagram to Understand the Programming, Erasing and ReliabilityChen, Wei-Chen / Lue, Hang-Ting / Fan, Sheng-Ting / Hsu, Tzu-Hsuan / Jhang, Pei-Ci / Vej-Hansen, Ulrik G. / Khomyakov, Petr A. / Lin, Keng-Hua / Wang, Keh-Chung / Lu, Chih-Yuan et al. | 2021
- 8.5.1
-
A New Surface Potential and Physics Based Compact Model for a-IGZO TFTs at Multinanoscale for High Retention and Low-Power DRAM ApplicationGuo, Jingrui / Han, Kaizhen / Subhechha, Subhali / Duan, Xinlv / Chen, Qian / Geng, Di / Huang, Shijie / Xu, Lihua / An, Junjie / Kar, Gouri Sankar et al. | 2021
- 8.6.1
-
High-Density and High-Speed 4T FinFET SRAM for Cryogenic ComputingHu, Vita Pi-Ho / Liu, Chang-Ju / Chiang, Hung-Li / Wang, Jer-Fu / Cheng, Chao-Ching / Chen, Tzu-Chiang / Chang, Meng-Fan et al. | 2021
- 9.1.1
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TiOx/Ti/TiOx Film-based Waveguide Bolometric Detector for On-Chip Si Photonic SensorsShim, Joonsup / Lim, Jinha / Geum, Dae-Myeong / You, Jong-Bum / Yoon, Hyeonho / Kim, Joon Pyo / Baek, Woo Jin / Han, Jae-Hoon / Kim, SangHyeon et al. | 2021
- 9.2.1
-
Macroscopic-Assembled-Graphene Nanofilms/Germanium Broadband PhotodetectorsLiu, Lixiang / Cao, Xiaoxue / Peng, Li / Bodepudi, Srikrishna Chanakya / Wu, Shaoxiong / Fang, Wenzhang / Liu, Junxue / Xiao, Yejun / Wang, Xiaochen / Di, Zengfeng et al. | 2021
- 9.3.1
-
World-first $1\ \mu \mathrm{m}$-pixelated 72K large area active matrix spatial light modulator on glass for digital holographic displayChoi, Ji Hun / Pi, Jae-Eun / Yang, Jong-Heon / Kim, Yong-Hae / HeonKim, Gi / Kim, Hee-Ok / Lee, Won-Jae / Kim, Joo Yeon / Kim, Jinwoong / Kim, Myungyu et al. | 2021
- 9.4.1
-
Monolithic 3D $\mu$-LED displays through BEOL integration of large-area MoS2 TFT matrixMeng, Wanqing / Xu, Feifan / Shen, Xue / Tao, Tao / Yu, Zhihao / Wen, Kaichuan / Wang, Jianpu / Qin, Feng / Tu, Xuecou / Ning, Jing et al. | 2021
- 10.1.1
-
Highly Reliable Cell Characteristics with CSOB(Channel-hole Sidewall ONO Butting) Scheme for 7th Generation 3D-NANDKang, Jin-kyu / Lee, Jaeduk / Yim, Yongsik / Park, Sejun / Kim, Hyun Suk / Cho, Eun Suk / Kim, Taehun / Lee, Jung Hoon / Kim, Joon / Lee, Raeyoung et al. | 2021
- 10.2.1
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Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memoryRamesh, S. / Palayam, S. Vadakupudhu / Ajaykumar, A. / Opsomer, K. / Bastos, J. / Ragnarsson, L.-A. / Breuil, L. / Arreghini, A. / Wouters, L. / Spampinato, V. et al. | 2021
- 10.3.1
-
Investigation of Methods That Greatly Improve 3D NOR Flash to Either Gain Superb Retention or Become DRAM-like with High Endurance $(> 1\mathrm{G}$ cycling) and High Write-bandwidth $(> 4\text{Gb}/\mathrm{s})$Lue, Hang-Ting / Hsu, Tzu-Hsuan / Lo, Chieh / Yeh, Teng-Hao / Wang, Keh-Chung / Lu, Chih-Yuan et al. | 2021
- 10.4.1
-
Dielectric Confinement Impact on Electrical Performance of Highly Scaled Saddle-Fin Cell Transistor for High Density DRAMOh, Dongyean / Lee, Seunghan / Kim, Sangyong / Moon, Jungmin / Lee, Seungchul / Park, Sungkye / Kim, Jinkook et al. | 2021
- 10.5.1
-
Novel Vertical Channel-All-Around(CAA) IGZO FETs for $2\mathrm{T}0\mathrm{C}$ DRAM with High Density beyond 4F2 by Monolithic StackingDuan, Xinlv / Huang, Kailiang / Feng, Junxiao / Niu, Jiebin / Qin, Haibo / Yin, Shihui / Jiao, Guangfan / Leonelli, Daniele / Zhao, Xiaoxuan / Jing, Weiliang et al. | 2021
- 10.6.1
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Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, >1011 cycles endurance and Lg scalability down to 14nmBelmonte, A. / Oh, H. / Subhechha, S. / Rassoul, N. / Hody, H. / Dekkers, H. / Delhougne, R. / Ricotti, L. / Banerjee, K. / Chasin, A. et al. | 2021
- 11.1.1
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Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS IntegrationThen, Han Wui / Radosavljevic, M. / Koirala, P. / Thomas, N. / Nair, N. / Ban, I. / Talukdar, T. / Nordeen, P. / Ghosh, S. / Bader, S. et al. | 2021
- 11.2.1
-
Monolithic 3D Integrated InGaAs HEMTs on Si for Next-Generation Communication: Record $f_{\text{MAX}}$ and Relaxed Self-Heating of Top Devices by a Novel M3D StructureJeong, Jaeyong / Kim, Seong Kwang / Kim, Jongmin / Geum, Dae-Myeong / Kim, SangHyeon et al. | 2021
- 11.3.1
-
$\text{In}_{x}\text{Ga}_{1-x}\text{As}$ quantum-well high-electron-mobility transistors with a record combination of $\mathrm{f}_{\mathrm{T}}$ and $\mathrm{f}_{\max}$: From the mobility relevant to ballistic transport regimesYun, Seung-Won / Jo, Hyeon-Bhin / Yoo, Ji-Hoon / Park, Wan-Soo / Jeong, Hyeon-Seok / Choi, Su-Min / Kim, Hyo-Jin / George, Sethu / Beak, Ji-Min / Lee, In-Guen et al. | 2021
- 11.4.1
-
InP/GaAsSb Double Heterojunction Bipolar Transistor Technology with fMAX = 1.2 THzArabhavi, A.M. / Ciabattini, F. / Hamzeloui, S. / Fluckiger, R. / Popovic, T. / Han, D. / Marti, D. / Bonomo, G. / Chaudhary, R. / Ostinelli, O. et al. | 2021
- 11.5.1
-
Enabling Device Technologies for Photonics-assisted Millimeter and Terahertz Wave ApplicationsNagatsuma, Tadao / Fujita, Masayuki / Yi, Li et al. | 2021
- 12.1.1
-
Design-Technology Co-Optimizations (DTCO) for General-Purpose Computing In-Memory Based on 55nm NOR Flash TechnologyFeng, Yang / Chen, Bing / Liu, Jing / Sun, Zhaohui / Hu, Hongyang / Zhang, Junyu / Zhan, Xuepeng / Chen, Jiezhi et al. | 2021
- 12.2.1
-
RRAM-enabled AI Accelerator ArchitectureWang, Xinxin / Wu, Yuting / Lu, Wei D. et al. | 2021
- 12.3.1
-
Improved On-chip Training Efficiency at Elevated Temperature and Excellent Inference Accuracy with Retention (> 108 s) of $\text{Pr}_{0.7}\text{Ca}_{0.3}\text{MnO}_{3-\mathrm{x}}$ ECRAM Synapse Device for Hardware Neural NetworkLee, Chuljun / Kwak, Myonghoon / Choi, Woosel k / Kim, Seyoung / Hwang, Hyunsang et al. | 2021
- 12.4.1
-
Implementation of Discrete Fourier Transform using RRAM Arrays with Quasi-Analog Mapping for High-Fidelity Medical Image ReconstructionZhao, Han / Liu, Zhengwu / Tang, Jianshi / Gao, Bin / Zhou, Ying / Yao, Peng / Xi, Yue / Qian, He / Wu, Huaqiang et al. | 2021
- 12.5.1
-
A 128kb Stochastic Computing Chip based on RRAM Flicker Noise with High Noise Density and Nearly Zero Autocorrelation on 28-nm CMOS PlatformGong, Tiancheng / Hu, Qiao / Dong, Danian / Jiang, Haijun / Yang, Jianguo / Xu, Xiaoxin / Chen, Xiaoming / Luo, Qing / Liu, Qi / Chung, Steve S. et al. | 2021
- 12.6.1
-
Forming-free and Annealing-free V/VOx/HfWOx/Pt Device Exhibiting Reconfigurable Threshold and Resistive switching with high speed (<30ns) and high endurance (>1012/>1010)Fu, Yaoyao / Zhou, Yue / Huang, Xiaodi / Gao, Bin / He, Yuhui / Li, Yi / Chai, Yang / Miao, Xiangshui et al. | 2021
- 13.1.1
-
18nm FDSOI Technology Platform embedding PCM & Innovative Continuous-Active Construct Enhancing Performance for Leading-Edge MCU ApplicationsMin, Doohong / Park, Jinha / Weber, Olivier / Wacquant, Francois / Villaret, Alexandre / Vandenbossche, Eric / Arnaud, Franck / Bernard, Emilie / Elghouli, Salim / Boccaccio, Christian et al. | 2021
- 13.2.1
-
Design Technology Co-Optimization for Cold CMOS Benefits in Advanced TechnologiesChiang, Hung-Li / Wu, Jui-Jen / Chou, Chen-Han / Hsiao, Yen-Fu / Chen, Yi-Chun / Liu, Leo / Wang, Jer-Fu / Chen, Tzu-Chiang / Liao, Pei-Jun / Cai, Jin et al. | 2021
- 13.3.1
-
High Performance 4nm FinFET Platform (4LPE) with Novel Advanced Transistor Level DTCO for Dual-CPP/HP-HD Standard CellsYasuda-Masuoka, Yuri / Jeong, Jaehun / Son, Kihwang / Lee, SeungWook / Park, Seulki / Lee, Youngho / Youn Kim, Ju / Lee, Jaeho / Cho, Moongi / Lee, Sihyung et al. | 2021
- 13.4.1
-
Al-doped and Deposition Temperature-engineered HfO2 Near Morphotropic Phase Boundary with Record Dielectric Permittivity (~68)Zhou, Jiuren / Zhou, Zuopu / Jiao, Leming / Wang, Xinke / Kang, Yuye / Wang, Haibo / Han, Kaizhen / Zheng, Zijie / Gong, Xiao et al. | 2021
- 13.5.1
-
Dipole-First Gate Stack as a Scalable and Thermal Budget Flexible Multi-Vt Solution for Nanosheet/CFET DevicesArimura, H. / Ragnarsson, L.-A. / Oniki, Y. / Franco, J. / Vandooren, A. / Brus, S. / Leonhardt, A. / Sippola, P. / Ivanova, T. / Verni, G. Alessio et al. | 2021
- 13.6.1
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Demonstration of Low EOT Gate Stack and Record Transconductance on $L_{\mathrm{g}}=90$ nm nFETs Using 1.8 nm Ferroic HfO2-ZrO2 SuperlatticeLi, W. / Wang, L. C. / Cheema, S. S. / Shanker, N. / Park, J. H. / Liao, Y. H. / Hsu, S. L. / Hsu, C. H. / Volkman, S. / Sikder, U. et al. | 2021
- 14.1.1
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Si MOS and Si/SiGe quantum well spin qubit platforms for scalable quantum computingPillarisetty, R. / Watson, T.F. / Mueller, B. / Henry, E. / George, H.C. / Bojarski, S. / Lampert, L. / Luthi, F. / Kotlyar, R. / Zietz, O. et al. | 2021
- 14.2.1
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Material and integration challenges for large scale Si quantum computingVinet, M. / Bedecarrats, T. / Paz, B. Cardoso / Martinez, B. / Chanrion, E. / Catapano, E. / Contamin, L. / Pallegoix, L. / Venitucci, B. / Mazzocchi, V. et al. | 2021
- 14.3.1
-
High-fidelity Two and Three Spin Operations in Si with Triple Quantum DotsTarucha, S. et al. | 2021
- 14.4.1
-
Silicon-based Quantum Computing: High-density, High-temperature QubitsDzurak, Andrew S. et al. | 2021
- 14.5.1
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3D Integration Technology for Quantum Computer based on Diamond Spin QubitsIshihara, R. / Hermias, J. / Yu, S. / Yu, K. Y. / Li, Y. / Nur, S. / Iwai, T. / Miyatake, T. / Kawaguchi, K. / Doi, Y. et al. | 2021
- 14.6.1
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Quantum Photonics with SnV Centers in DiamondAghaeimeibodi, S. / Vuckovic, J. et al. | 2021
- 14.7.1
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Packaging and integration challenges in a superconducting-qubit-based quantum computerGiustina, M. et al. | 2021
- 15.1.1
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Surface-Functionalized Hafnia with Bespoke Ferroelectric Properties for Memory and Logic ApplicationsChoe, D.-H. / Bae, H. / Lee, H. / Lee, Y. / Moon, T. / Nam, S. G. / Jo, S. / Lee, H. J. / Lee, E. / Heo, J. et al. | 2021
- 15.2.1
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Variation and Stochasticity in Polycrystalline HZO based MFIM: Grain-Growth Coupled 3D Phase Field Model based AnalysisKoduru, R. / Saha, A. K. / Si, M. / Lyu, X. / Ye, P. D. / Gupta, S. K. et al. | 2021
- 15.3.1
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On the Channel Percolation in Ferroelectric FET Towards Proper Analog States EngineeringNi, Kai / Thomann, Simon / Prakash, Om / Zhao, Zijian / Deng, Shan / Amrouch, Hussam et al. | 2021
- 15.4.1
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NLS based Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric Hafnium Zirconium OxidesChen, Yu-Chen / Hsiang, Kuo-Yu / Tang, Ying-Tsan / Lee, Min-Hung / Su, Pin et al. | 2021
- 15.5.1
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Predictive Modeling of Ferroelectric Tunnel Junctions for Memory and Analog Weight Cell ApplicationsXiao, Yi / Deng, Shan / Zhao, Zijian / Narayanan, Vijaykrishnan / Ni, Kai et al. | 2021
- 15.6.1
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Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligenceManeux, C. / Mukherjee, C. / Deng, M. / Dubourg, M. / Reveil, L. / Bordea, G. / Lecestre, A. / Larrieu, G. / Trommer, J. / Breyer, E.T. et al. | 2021
- 16.1.1
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Biohybrid Nanostructuringvan der Wijngaart, W. et al. | 2021
- 16.2.1
-
Double-Gate Si Nanowire FET Sensor Arrays For Label-Free C-Reactive Protein detection enabled by antibodies fragments and pseudo-super-Nernstian back-gate operationCapua, L. / Sprunger, Y. / Elettro, H. / Grammoustianou, A. / Midahuen, R. / Ernst, T. / Barraud, S. / Gill, R. / Ionescu, A.M. et al. | 2021
- 16.3.1
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RF Powered Flexible Printed Ion-sensitive Organic Field Effect Transistor Chip with Design-to-manufacturing Automation for Mobile Bio-sensingOuyang, B. / Song, Y. / Cai, W. / Tang, Y. / Si, Y. / Yin, X. / Chen, S. / Tang, W. / Zhou, H. / Huang, B. et al. | 2021
- 16.4.1
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High Stretchability Ultralow-Power All-Printed Thin Film Transistor Amplifier on Strip-Helix-FiberJiang, Chen / Tsangarides, Constantinos P. / Cheng, Xiang / Ding, Li / Ma, Hanbin / Nathan, Arokia et al. | 2021
- 16.5.1
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High Throughput Neuromorphic Brain Interface with CuOx Resistive Crossbars for Real-time Spike SortingShi, Yuhan / Ananthakrishnan, Akshay / Oh, Sangheon / Liu, Xin / Hota, Gopabandhu / Cauwenberghs, Gert / Kuzum, Duygu et al. | 2021
- 16.6.1
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Wearable Pulse Wave Sensor and Interface for Real-Time Dynamic Blood Pressure MonitoringLi, Huimin / Li, Anqi / Zhou, Zhongyi / Jiang, Bowei / Yang, Qi / Liu, Xinghui / Wang, Kai et al. | 2021
- 17.2.1
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High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM ApplicationsGoh, Youngin / Hwang, Junghyeon / Kim, Minki / Jung, Minhyun / Lim, Sehee / Jung, Seong-Ook / Jeon, Sanghun et al. | 2021
- 17.3.1
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A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO ChannelLiang, Zhongxin / Tang, Kechao / Dong, Junchen / Li, Qijun / Zhou, Yuejia / Zhu, Runteng / Wu, Yanqing / Han, Dedong / Huang, Ru et al. | 2021
- 17.4.1
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High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 108 CyclesLin, Z. / Si, M. / Luo, Y.-C. / Lyu, X. / Charnas, A. / Chen, Z. / Yu, Z. / Tsai, W. / McIntyre, P. C. / Kanjolia, R. et al. | 2021
- 17.5.1
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First demonstration of three terminal MRAM devices with immunity to magnetic fields and 10 ns field free switching by electrical manipulation of exchange biasZhu, D.Q. / Guo, Z.X. / Du, A. / Xiong, D.R. / Xiao, R. / Cai, W.L. / Shi, K.W. / Peng, S.Z. / Cao, K.H. / Lu, S.Y. et al. | 2021
- 17.6.1
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Demonstration of a Free-layer Developed With Atomistic Simulations Enabling BEOL Compatible VCMA-MRAM with a Coefficient ≥100fJ/VmCarpenter, R. / Kim, W. / Sankaran, K. / Ao, N. / Ben Chroud, M. / Kumar, A. / Trovato, A. / Pourtois, G. / Couet, S. / Kar, G. S. et al. | 2021
- 18.1.1
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Large-scale TCAD Simulations Enabled by Hardware-Accelerated High Performance ComputingXu, Nuo / Jiang, Zhengping / Lu, Po-Sheng / Chang, Yuan Hao / Li, Ji-Ting / Ong, Kian-Chuan / Xiao, Zhi-Ren / Wu, Jeff et al. | 2021
- 18.2.1
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Restructuring TCAD System: Teaching Traditional TCAD New TricksMyung, Sanghoon / Jang, Wonik / Jin, Seonghoon / Choe, Jae Myung / Jeong, Changwook / Kim, Dae Sin et al. | 2021
- 18.3.1
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Optimum Design of Channel Material and Surface Orientation for Extremely-Thin-Body nMOSFETs under New Modeling of Surface Roughness ScatteringSumita, K. / Chen, C.-T. / Toprasertpong, K. / Takenaka, M. / Takagi, S. et al. | 2021
- 18.4.1
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Quantum Transport Simulation with the First-Order Perturbation: Intrinsic AC Performance of Extremely Scaled Nanosheet MOSFETs in THz FrequenciesAhn, Phil-Hun / Hong, Sung-Min et al. | 2021
- 18.5.1
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Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETsHuang, Shijie / Wu, Zhenghua / Xu, Haoqing / Guo, Jingrui / Xu, Lihua / Duan, XinLv / Chen, Qian / Yang, Guanhua / Zhang, Qingzhu / Yin, Huaxiang et al. | 2021
- 18.6.1
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Physics-based Compact Modeling of Statistical Flicker Noise in FinFET TechnologyLiu, Minghao / Zhang, Jiayang / Sun, Zixuan / Wang, Runsheng / Huang, Ru et al. | 2021
- 19.1.1
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In-depth Understanding of Polarization Switching Kinetics in Polycrystalline $\mathbf{Hf}_{0.5} \mathbf{Zr}_{0.5} \mathbf{O}_{2}$ Ferroelectric Thin Film: A Transition From NLS to KAIWei, Wei / Zhang, Weiqiang / Tai, Lu / Zhao, Guoqing / Sang, Pengpeng / Wang, Qianwen / Chen, Fei / Tang, Mingfeng / Feng, Yang / Zhan, Xuepeng et al. | 2021
- 19.2.1
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Apparent ‘Negative Capacitance’ Effects in the Pulse Measurements of FerroelectricsLiu, Zhan / Ma, T. P. et al. | 2021
- 19.3.1
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Standby Bias Improvement of Read After Write Delay in Ferroelectric Field Effect TransistorsWang, Zheng / Tasneem, Nujhat / Hur, Jae / Chen, Hang / Yu, Shimeng / Chern, Winston / Khan, Asif et al. | 2021
- 19.4.1
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FeFETs for Near-Memory and In-Memory ComputeSalahuddin, Saveef / Tan, Ava / Cheema, Suraj / Shanker, Nirmaan / Hoffmann, Michael / Bae, J.-H et al. | 2021
- 19.5.1
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Energy- and Area-efficient Fe-FinFET-based Time-Domain Mixed-Signal Computing In Memory for Edge Machine LearningLuo, Jin / Xu, Weikai / Du, Yide / Fu, Boyi / Song, Jiahao / Fu, Zhiyuan / Yang, Mengxuan / Li, Yiqing / Ye, Le / Huang, Qianqian et al. | 2021
- 19.6.1
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BEOL Compatible Superlattice FerroFET-based High Precision Analog Weight Cell with Superior Linearity and SymmetryAabrar, Khandker Akif / Gomez, Jorge / Kirtania, Sharadindu Gopal / Jose, Matthew San / Luo, Yandong / Ravikumar, Priyankka G. / Ravindran, Prasanna Venkatesan / Ye, Huacheng / Banerjee, Sanjukta / Dutta, Sourav et al. | 2021
- 20.1.1
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A Back Illuminated 6 µm SPAD Pixel Array with High PDE and Timing Jitter PerformanceShimada, S. / Otake, Y. / Yoshida, S. / Endo, S. / Nakamura, R. / Tsugawa, H. / Ogita, T. / Ogasahara, T. / Yokochi, K. / Inoue, Y. et al. | 2021
- 20.2.1
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3.2 Megapixel 3D-Stacked Charge Focusing SPAD for Low-Light Imaging and Depth SensingMorimoto, K. / Iwata, J. / Shinohara, M. / Sekine, H. / Abdelghafar, A. / Tsuchiya, H. / Kuroda, Y. / Tojima, K. / Endo, W. / Maehashi, Y. et al. | 2021
- 20.3.1
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InGaAs/InP SPAD detecting single photons at 1550 nm with up to 50% efficiency and low noiseSignorelli, F. / Telesca, F. / Conca, E. / Frera, A. Della / Ruggeri, A. / Giudice, A. / Tosi, A. et al. | 2021
- 20.4.1
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Single-Chip Beam Scanner LiDAR Module for 20-m ImagingByun, Hyunil / Cho, Yongchul / Hwang, Inoh / Jang, Bongyong / Kim, Jinmyung / Lee, Changbum / Lee, Eunkyung / Lee, Jisan / Otsuka, Tatsuhiro / Shim, Dongshik et al. | 2021
- 21.1.1
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Low-Power and Scalable Retention-Enhanced IGZO TFT eDRAM-Based Charge-Domain ComputingLiu, Jialong / Sun, Chen / Tang, Wenjun / Zheng, Zijie / Liu, Yongpan / Yang, Huazhong / Jiang, Chen / Ni, Kai / Gong, Xiao / Li, Xueqing et al. | 2021
- 21.2.1
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Novel Analog in-Memory Compute with > 1 nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS TechnologyBaba, H. / Ohshita, S. / Hamada, T. / Ando, Y. / Hodo, R. / Ono, T. / Hirose, T. / Kurokawa, Y. / Murakawa, T. / Kunitake, H. et al. | 2021
- 21.3.1
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In-Memory Annealing Unit (IMAU): Energy-Efficient (2000 TOPS/W) Combinatorial Optimizer for Solving Travelling Salesman ProblemHong, Ming-Chun / Cho, Le-Chih / Lin, Chih-Sheng / Lin, Yu-Hui / Chen, Po-An / Wang, I-Ting / Tzeng, Pei-Jer / Sheu, Shyh-Shyuan / Lo, Wei-Chung / Wu, Chih-I et al. | 2021
- 21.5.1
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Monolithic 3D Integration of Logic, Memory and Computing-In-Memory for One-Shot LearningLi, Yijun / Tang, Jianshi / Gao, Bin / Yao, Jian / Xi, Yue / Li, Yuankun / Li, Tingyu / Zhou, Ying / Liu, Zhengwu / Zhang, Qingtian et al. | 2021
- 22.1.1
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Fully Self-Aligned Via Integration for Interconnect Scaling Beyond 3nm NodeChen, H.P. / Wu, Y.H. / Huang, H.Y. / Tsai, C.H. / Lee, S.K. / Lee, C.C. / Wei, T.H. / Yao, H.C. / Wang, Y.C. / Liao, C.Y. et al. | 2021
- 22.2.1
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Electromigration and Line R of Graphene Capped Cu Dual Damascene InterconnectNogami, T. / Nguyen, S. / Huang, H. / Lanzillo, N. / Shobha, H. / Li, J. / Peethela, B. / Parbatani, A. / van Schravendijk, B. / Varadarajan, B. et al. | 2021
- 22.3.1
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System Design Technology Co-Optimization for 3D Integration at <5nm nodesSong, S.C. / Nallapati, Giri / Khan, Irfan / Nikfar, Nader / Yan, Bohan / Miranda, Miguel / Lim, Bruce / Nagarajan, Mali / Park, Joon-Young / Srinivas, Vaishnav et al. | 2021
- 22.4.1
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Design and Optimization of SRAM Macro and Logic Using Backside Interconnects at 2nm nodeChen, R. / Sisto, G. / Jourdain, A. / Hiblot, G. / Stucchi, M. / Kakarla, N. / Chehab, B. / Salahuddin, S. M. / Schleicher, F. / Veloso, A. et al. | 2021
- 22.5.1
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Buried Power Rail Metal exploration towards the 1 nm NodeGupta, A. / Radisic, D. / Maes, J. W. / Pedreira, O. Varela / Soulie, J-P. / Jourdan, N. / Mertens, H. / Bandyopadhyay, S. / Le, Q. T. / Pacco, A. et al. | 2021
- 23.1.1
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Hardware Neural Network using Hybrid Synapses via Transfer Learning: WOx Nano-Resistors and TiOx RRAM Synapse for Energy-Efficient Edge-AI SensorChoi, Wooseok / Kwak, Myonghoon / Heo, Seongjae / Lee, Kyumin / Lee, Seungwoo / Hwang, Hyunsang et al. | 2021
- 23.2.1
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Low-power and Self-powered Environmental Sensor Assisted by Deep-Learning TechnologyPark, I. et al. | 2021
- 23.3.1
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Human Retinal Photoreceptor-Inspired Sensor with Adjustable Gain from 0.1–106 and Wide Dynamic Range Over 140dBQi, Yihong / Liu, Xiaolin / Feng, Zhenhao / Li, Qian / Su, Kuiren / Zhou, Xianda / Guo, Jianping / Wang, Kai et al. | 2021
- 23.4.1
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$1.62\mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave InfraredSteckel, J. S. / Josse, E. / Pattantyus-Abraham, A. G. / Bidaud, M. / Mortini, B. / Bilgen, H. / Arnaud, O. / Allegret-Maret, S. / Saguin, F. / Mazet, L. et al. | 2021
- 23.5.1
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CMOS-MEMS multi-sensor single chip with high heat dissipation and low-temperature hermetic sealingChang, C. Y. / Tseng, S. H. / Chiang, M. H. / Hsin, C. T. / Ke, L. Y. / Wang, Y. J. / Yeh, C. Y. / Tsai, H. H. / Juang, Y. Z. / Yeh, W. K. et al. | 2021
- 23.6.1
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Study of DC-Driven MEM Relay Oscillators for Implementation of Ising MachinesHU, Xiaoer / Tatum, Lars Prospero / Almeida, Sergio Fabian / Esatu, Tsegereda Kedir / Liu, Tsu-Jae King et al. | 2021
- 25.1.1
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Human-Centric ComputingRabaey, Jan M. et al. | 2021
- 25.2.1
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In-Memory Computing with Associative Memories: A Cross-Layer PerspectiveHu, Xiaobo Sharon / Niemier, Michael / Kazemi, Arman / Laguna, Ann Franchesca / Ni, Kai / Rajaei, Ramin / Sharifi, Mohammad Mehdi / Yin, Xunzhao et al. | 2021
- 25.3.1
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Monolithic 3D Compute-in-Memory Accelerator with BEOL Transistor based Reconfigurable InterconnectLuo, Yandong / Dutta, Sourav / Kaul, Ankit / Lim, Sung-kyu / Bakir, Muhannad / Datta, Suman / Yu, Shimeng et al. | 2021
- 25.4.1
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The Future of Hardware Technologies for Computing: N3XT 3D MOSAIC, Illusion Scaleup, Co-DesignRadway, R.M. / Sethi, K. / Chen, W.-C. / Kwon, J. / Liu, S. / Wu, T.F. / Beigne, E. / Shulaker, M.M. / Wong, H.-S.P. / Mitra, S. et al. | 2021
- 25.5.1
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Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and SystemDou, Chunmeng / Xu, Xiaoxin / Zhang, Xumeng / Wang, Linfang / Ye, Wang / An, Junjie / Yang, Jianguo / Luo, Qing / Shi, Tuo / Liu, Jing et al. | 2021
- 25.7.1
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Mm-wave automotive radar: from evolution to revolutionDoris, K. / Jansen, F. / Lont, M. / Dinh, T.V. / Syed, W. / Carluccio, G. / Tiemeijer, L. F. / Saric, T. / Zong, Z. / Osorio, J. et al. | 2021
- 26.1.1
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Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport DevicesJagannathan, H. / Anderson, B. / Sohn, C-W. / Tsutsui, G. / Strane, J. / Xie, R. / Fan, S. / Kim, K-I. / Song, S. / Sieg, S. et al. | 2021
- 26.2.1
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Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and BeyondRitzenthaler, R. / Mertens, H. / Eneman, G. / Simoen, E. / Bury, E. / Eyben, P. / Bufler, F. M. / Oniki, Y. / Briggs, B. / Chan, B.T. et al. | 2021
- 26.3.1
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Critical Elements for Next Generation High Performance Computing Nanosheet TechnologyBao, R. / Durfee, C. / Zhang, J. / Qin, L. / Rozen, J. / Zhou, H. / Li, J. / Mukesh, S. / Pancharatnam, S. / Zhao, K. et al. | 2021
- 26.4.1
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Highly Stacked 8 $\mathbf{Ge}_{\boldsymbol{0.9}}\mathbf{Sn}_{\boldsymbol{0.1}}$ Nanosheet pFETs with Ultrathin Bodies (~3nm) and Thick Bodies (~30nm) Featuring the Respective Record $\mathbf{I}_{\mathbf{ON}}/\mathbf{I}_{\mathbf{OFF}}$ of 1.4x107 and Record $\mathbf{I}_{\mathbf{ON}}$ of $\boldsymbol{92}\boldsymbol{\mu}\mathbf{A}$ at $\mathbf{V}_{\mathbf{ov}}=\mathbf{V}_{\mathbf{DS}}=$ -0.5V by CVD Epitaxy and Dry EtchingTsai, Chung-En / Liu, Yi-Chun / Tu, Chien-Te / Huang, Bo-Wei / Jan, Sun-Rong / Chen, Yu-Rui / Chen, Jyun-Yan / Chueh, Shee-Jier / Cheng, Chun-Yi / Tsen, Chia-Jung et al. | 2021
- 27.1.1
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Self-energies in Atomistic Quantum Transport for Energy Transfer at Irregular InterfacesCharles, James / Lemus, Daniel / Kubis, Tillmann et al. | 2021
- 27.2.1
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Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device PerformanceSang, Pengpeng / Wang, Qianwen / Wei, Wei / Tai, Lu / Zhan, Xuepeng / Li, Yuan / Chen, Jiezhi et al. | 2021
- 27.3.1
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Extended Scale Length Theory Targeting Low-Dimensional FETs for Carbon Nanotube FET Digital Logic Design-Technology Co-optimizationGilardi, C. / Chehab, B. / Sisto, G. / Schuddinck, P. / Ahmed, Z. / Zografos, O. / Lin, Q. / Hellings, G. / Ryckaert, J. / Wong, H.-S.P. et al. | 2021
- 27.4.1
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Design Guidelines of Magnetic Tunnel Junctions with Two-dimensional Tunneling Barrier Layer: Atomistic Simulation Study from Material to DeviceMa, Xiaolei / Chen, Jiezhi / Wang, Kaiyou / Wang, Runsheng / Huang, Ru et al. | 2021
- 27.5.1
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Large-Scale 2D Spin-Based Quantum Processor with a Bi-Linear ArchitectureMohiyaddin, F.A. / Li, R. / Brebels, S. / Simion, G. / Dumoulin Stuyck, N. I. / Godfrin, C. / Shehata, M. / Elsayed, A. / Gys, B. / Kubicek, S. et al. | 2021
- 27.6.1
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Time Division Multiplexing Ising Computer Using Single Tunable True Random Number Generator Based on Spin Torque Nano-OscillatorZhang, Bolin / Liu, Yu / Gao, Tianqi / Zhang, Deming / Zhao, Weisheng / Zeng, Lang et al. | 2021
- 28.1.1
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Heater system optimization for robust ePCM reliability and scalability in 28nm FDSOI technologyRanica, R. / Berthelon, R. / Gandolfo, A. / Samanni, G. / Gomiero, E. / Jasse, J. / Mattavelli, P. / Sandrini, J. / Querre, M. / Le-Friec, Y. et al. | 2021
- 28.2.1
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Uncertainty Quantification Based on Multilevel Conductance and Stochasticity of Heater Size Dependent C-doped Ge2Sb2Te5 PCM ChipYan, Longhao / Li, Xi / Zhu, Yihang / Yan, Bonan / Lu, Yingming / Zhang, Teng / Yang, Yuchao / Song, Zhitang / Huang, Ru et al. | 2021
- 28.3.1
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Temperature sensitivity of analog in-memory computing using phase-change memoryBoybat, I. / Kersting, B. / Sarwat, S. Ghazi / Timoneda, X. / Bruce, R. L. / BrightSky, M. / Gallo, M. Le / Sebastian, A. et al. | 2021
- 28.4.1
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Polarity-dependent threshold voltage shift in ovonic threshold switches: Challenges and opportunitiesRavsher, Taras / Degraeve, Robin / Garbin, Daniele / Fantini, Andrea / Clima, Sergiu / Donadio, Gabriele Luca / Kundu, Shreya / Hody, Hubert / Devulder, Wouter / Van Houdt, Jan et al. | 2021
- 28.5.1
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Low variability high endurance and low voltage arsenic-free selectors based on GeCTeAmbrosi, E. / Wu, C. H. / Lee, H. Y. / Chang, P. C. / Hsu, C. F. / Lee, C. M. / Chang, C. C. / Chen, Y. Y / Heh, D. W. / Hou, D. H. et al. | 2021
- 28.6.1
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Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint MemoryCheng, H. Y. / Chien, W C. / Kuo, I. T. / Yang, C. H. / Chou, Y. C. / Bruce, R. L. / Lai, E. K. / Daudelin, D. / Yeh, C. W. / Gignac, L. et al. | 2021
- 29.1.1
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Reconfigurable Si-based Active Metasurface with Ultra Low Loss and Crosstalk for LiDARJeong, Byung Gil / Park, Junghyun / Kim, Sun Il / Lee, Minkyung / Jang, Jaeduck / Ha, Kyoungho / Choo, Hyuck et al. | 2021
- 29.2.1
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Silicon Photonics Beyond Optical InterconnectsBoeuf, F. / Barrera, C. / Fincato, A. / Tang, H. / Guerber, S. / Monfray, S. / Ohno, S. / Fowler, D. / Charlet, I. / Gianini, L. et al. | 2021
- 29.3.1
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Nanolasers: towards large-scale phase-locked laser arraysFainman, Yeshaiahu / Jiang, Sizhu et al. | 2021
- 29.4.1
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First Demonstration of Monolithic Waveguide-Integrated Group IV Multiple-Quantum-Well Photodetectors on 300 mm Si Substrate for $2\ \mu \mathrm{m}$ Optoelectronic Integrated CircuitsWang, Haibo / Chen, Yue / Zhang, Gong / Zhang, Jishen / Xu, Haiwen / Huang, Yi-Chiau / Gong, Xiao et al. | 2021
- 30.1.1
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Highly Efficient Color Separation and Focusing in the Sub-micron CMOS Image SensorYun, Seokho / Roh, Sookyoung / Lee, Sangyun / Park, Hongkyu / Lim, Minwoo / Ahn, Sungmo / Choo, Hyuck et al. | 2021
- 30.2.1
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Automotive 8.3 MP CMOS Image Sensor with 150 dB Dynamic Range and Light Flicker MitigationInnocent, Manuel / Velichko, Sergey / Lloyd, Denver / Beck, Jeff / Hernandez, Augie / Vanhoff, Barry / Silsbv, Chris / Oberoi, Anirudh / Singh, Gurvinder / Gurindagunta, Sundaraiah et al. | 2021
- 30.3.1
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A $2.9\mu \mathrm{m}$ Pixel CMOS Image Sensor for Security Cameras with high FWC and 97 dB Single-Exposure Dynamic RangeUchida, T. / Yamashita, K. / Masagaki, A. / Kawamura, T. / Tokumitsu, C. / IwabuchI, S. / Onizawa, T. / Ohura, M. / Ansai, H. / Izukashi, K. et al. | 2021
- 30.4.1
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3D Sequential Process Integration for CMOS Image SensorNakazawa, K. / Yamamoto, J. / Mori, S. / Okamoto, S. / Shimizu, A. / Baba, K. / Fujii, N. / Uehara, M. / Hiramatsu, K. / Kumano, H. et al. | 2021
- 31.1.1
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Understanding and modelling the PBTI reliability of thin-film IGZO transistorsChasin, A. / Franco, J. / Triantopoulos, K. / Dekkers, H. / Rassoul, N. / Belmonte, A. / Smets, Q. / Subhechha, S. / Claes, D. / van Setten, M. J. et al. | 2021
- 31.2.1
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Understanding Hot Carrier Reliability in FinFET Technology from Trap-based ApproachWang, Runsheng / Sun, Zixuan / Liu, Yue-Yang / Yu, Zhuoqing / Wang, Zirui / Jiang, Xiangwei / Huang, Ru et al. | 2021
- 31.3.1
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Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOSMichl, J. / Grill, A. / Stampfer, B. / Waldhoer, D. / Schleich, C. / Knobloch, T. / Ioannidis, E. / Enichlmair, H. / Minixhofer, R. / Kaczer, B. et al. | 2021
- 31.4.1
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Low-temperature atomic and molecular hydrogen anneals for enhanced chemical $\mathbf{SiO}_{2}$ IL quality in low thermal budget RMG stacksFranco, J. / Arimura, H. / de Marneffe, J.-F. / Wu, Z. / Vandooren, A. / Ragnarsson, L.-A / Litta, E. Dentoni / Horiguchi, N. / Croes, K. / Linten, D. et al. | 2021
- 31.5.1
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Next Generation of Robust Aviation Electrification - Challenges and OpportunitiesKshirsagar, Parag / Ewanchuk, Jeffery / Kheraluwala, Mustansir et al. | 2021
- 32.1.1
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Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and SimulationsShao, Yanjie / Pala, Marco G. / Esseni, David / del Alamo, Jesus A. et al. | 2021
- 32.2.1
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High-Speed Ternary CMOS Inverter by Monolithic Integration of NbO2 Threshold Switch with MOSFETHeo, Seongjae / Lee, Junjong / Lee, Sangmin / Lee, Seungwoo / Lee, Chuljun / Baek, Rock-Hyun / Hwang, Hyunsang et al. | 2021
- 32.3.1
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Magnetic domain walls: from physics to devicesRaymenants, E. / Wan, D. / Couet, S. / Canvel, Y. / Thiam, A. / Tsvetanova, D. / Souriau, L. / Asselberghs, I. / Carpenter, R. / Jossart, N. et al. | 2021
- 32.4.1
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Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit DeviceVaz, Diogo C. / Lin, Chia-Ching / Plombon, John / Choi, Won Young / Groen, Inge / Arango, Isabel / Pham, Van Tuong / Nikonov, Dmitri E. / Li, Hai / Debashis, Punyashloka et al. | 2021
- 32.5.1
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Narrow-Band Semiconductor Heterostructures for Efficient Spintronic Memory Device ApplicationsXue, Fenghua / Zhang, Yong / Zhang, Yu / Liao, Liyang / Li, Lun / Ruan, Hanzhi / Sun, Lu / Dong, Jing / Tang, Chenjia / Yu, Guoqiang et al. | 2021
- 33.1.1
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16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow CompatibilityFrancois, T. / Coignus, J. / Makosiej, A. / Giraud, B. / Carabasse, C. / Barbot, J. / Martin, S. / Castellani, N. / Magis, T. / Grampeix, H. et al. | 2021
- 33.2.1
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FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded MemoryChang, S. -C. / Haratipour, N. / Shivaraman, S. / Neumann, C. / Atanasov, S. / Peck, J. / Kabir, N. / Tung, I. -C. / Liu, H. / Krist, B. et al. | 2021
- 33.3.1
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Low Voltage and High Speed 1Xnm 1T1C FE-RAM with Ultra-Thin 5nm HZOSung, Minchul / Rho, Kwangmyoung / Kim, Jayong / Cheon, Junho / Choi, Kiyoung / Kim, Dohee / Em, Hoseok / Park, Gyeongcheol / Woo, Jungwook / Lee, Yeongyu et al. | 2021
- 33.4.1
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Embedding ferroelectric HfOx in memory hierarchy: Material- defects - device entanglementPcsic, Milan / Beltrando, Bastien et al. | 2021
- 33.5.1
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Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2 films: vacancy generation and lattice dislocationZheng, Yunzhe / Zheng, Yonghui / Gao, Zhaomeng / Yuan, Jun-Hui / Cheng, Yan / Zhong, Qilan / Xin, Tianjiao / Wang, Yiwei / Liu, Cheng / Huang, Yaru et al. | 2021
- 33.6.1
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Comprehensive Understanding of the HZO-based n/pFeFET Operation and Device Performance Enhancement StrategyKuk, Song-Hyeon / Han, Seung-Min / Kim, Bong-Ho / Baek, Seung-Hyub / Han, Jae-Hoon / Kim, Sang-hyeon et al. | 2021
- 34.1.1
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Opportunities in 3-D stacked CMOS transistorsRadosavljevic, M. / Huang, C.-Y. / Rachmady, W. / Seung, S.H. / Thomas, N. K. / Dewey, G. / Agrawal, A. / Owens, K. / Kuo, C. C. / Jezewski, C. J. et al. | 2021
- 34.2.1
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Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FABSmets, Quentin / Schram, Tom / Verreck, Devin / Cott, Daire / Groven, Benjamin / Ahmed, Zubair / Kaczer, Ben / Mitard, Jerome / Wu, Xiangyu / Kundu, Souvik et al. | 2021
- 34.3.1
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Enabling Hybrid Bonding on Intel ProcessElsherbini, Adel / Jun, Kimin / Vreeland, Richard / Brezinski, William / Niazi, Haris Khan / Shi, Yi / Yu, Qiang / Qian, Zhiguo / Xu, Jessica / Liff, Shawna et al. | 2021
- 34.4.1
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First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF ApplicationsChang, S.-W. / Lu, T.-H. / Yang, C.-Y. / Yeh, C.-J. / Huang, M.-K. / Meng, C.-F. / Chen, P.-J. / Chang, T.-H. / Chang, Y.-S. / Jhu, J.-W. et al. | 2021
- 34.5.1
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Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage RegulatorsChung, Hao-Tung / Shih, Bo-Jheng / Yang, Chih-Chao / Lin, Nei-Chih / Huang, Po-Tsang / Lan, Yun-Ping / Lai, Kuan-Fu / Hsu, Wan-Ting / Pan, Yu-Ming / Hong, Zhong-Jie et al. | 2021
- 35.1.1
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Integrating Taste Technology with Audiovisual MediaMiyashita, Homei et al. | 2021
- 35.2.1
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A Miniature Electronic Nose for Breath AnalysisLi, Zhaofang / Sie, Syuan-Hao / Lee, Jye-Luen / Chen, Yi-Ren / Chou, Ting-I / Wu, Ping-Chun / Chuang, Yu-Ting / Lin, Yu-Te / Chen, I-Cherng / Lu, Chih-Cheng et al. | 2021
- 35.3.1
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Computational Imaging with Vision Sensors embedding In-pixel ProcessingMartel, J.N.P. / Wetzstein, G. et al. | 2021
- 35.4.1
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AI SoCs for AR/VR User-InteractionRyu, Junha / Im, Dongseok / Yoo, Hoi-Jun et al. | 2021
- 35.5.1
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AR Glasses: Fatigue-free Optical Engines and Energy-efficient SLAM SensorsLee, Hong-Seok / Kim, Sunil / Kim, Yun-Tae / Jeon, Myungjae / Seo, Wontaek / Yang, Daeho / Lee, Chang-Kun / Moon, Seokil / Kwon, Namseop / Seo, Juwon et al. | 2021
- 36.1.1
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Physics and Innovative Technologies in SiC Power DevicesKimoto, T. / Kaneko, M. / Tachiki, K. / Ito, K. / Ishikawa, R. / Chi, X. / Stefanakis, D. / Kobayashi, T. / Tanaka, H. et al. | 2021
- 36.2.1
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Toward High Performance 4H-SiC MOSFETs Using Low Temperature Annealing Process with Supercritical FluidWang, Menghua / Yang, Mingchao / Liu, Weihua / Yang, Songquan / Han, Chuanyu / Geng, Li / Hao, Yue et al. | 2021
- 36.3.1
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Gate Oxide Instability against a Wide Range of Negative Electric Field Stress of SiC MOSFETsNoguchi, M. / Koyama, A. / Iwamatsu, T. / Watanabe, H. / Miura, N. et al. | 2021
- 36.4.1
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Recent Progress in Silicon Devices for Ultra-High Power ApplicationsVobecky, J. / Vemulapati, U. / Wikstrom, T. / Boksteen, B. / Dugal, F. / Stiasny, T. / Corvasce, C. et al. | 2021
- 36.5.1
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1.2 kV GaN/SiC-based Hybrid High Electron Mobility Transistor with Non-destructive BreakdownNakajima, A. / Hirai, H. / Miura, Y. / Harada, S. et al. | 2021
- 36.6.1
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First Demonstration of RESURF and Superjunction ß- Ga2O3 MOSFETs with p-NiO/n- Ga2O3 JunctionsWang, Yibo / Gong, Hehe / Jia, Xiaole / Han, Genquan / Ye, Jiandong / Liu, Yan / Hu, Haodong / Ou, Xin / Ma, Xiaohua / Hao, Yue et al. | 2021
- 37.1.1
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Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smootheningShi, Yuanyuan / Groven, Benjamin / Smets, Quentin / Sutar, Surajit / Banerjee, Sreetama / Medina, Henry / Wu, Xiangyu / Huyghebaert, Cedric / Brems, Steven / Lin, Dennis et al. | 2021
- 37.2.1
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Contact Engineering for High-Performance N-Type 2D Semiconductor TransistorsLin, Y. / Shen, P.-C. / Su, C. / Chou, A.-S. / Wu, T. / Cheng, C.-C. / Park, J.-H. / Chiu, M.-H. / Lu, A.-Y. / Tang, H.-L. et al. | 2021
- 37.3.1
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High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi ContactLi, Weisheng / Fan, Dongxu / Shao, Liangwei / Huang, Futao / Liang, Lei / Li, Taotao / Xu, Yifei / Tu, Xuecou / Wang, Peng / Yu, Zhihao et al. | 2021
- 37.4.1
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Short-Channel Double-Gate FETs with Atomically Precise Graphene NanoribbonsMutlu, Z. / Lin, Y. / Barin, G. B. / Zhang, Z. / Pitner, G. / Wang, S. / Darawish, R. / Giovannantonio, M. Di / Wang, H. / Cai, J. et al. | 2021
- 37.5.1
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Source/Drain Engineering by Tantalum Nitride (TaNx) Electrode for Boosting OSFET PerformanceOkuno, N. / Sato, Y. / Jimbo, Y. / Honda, H. / Kurata, M. / Wakuda, M. / Kunitake, H. / Kobayashi, M. / Yamazaki, S. et al. | 2021
- 37.6.1
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Computational Associative Memory Based on Monolithically Integrated Metal-Oxide Thin Film Transistors for Update-Frequent Search ApplicationsZhao, Zijian / Gomez, Jorge / Ye, Huacheng / Imani, Mohsen / Yin, Xunzhao / Deng, Shan / Melanson, Bryan / Zhang, Jing / Gong, Xiao / Abusleme, Angel et al. | 2021
- 38.1.1
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Spin-charge interconversion in topological insulators and topological semimetals for spin-orbit torque devicesSamarth, N. / Yanez, W. / Ou, Y. et al. | 2021
- 38.2.1
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Proposal for a Negative Capacitance Topological Quantum Field-Effect TransistorFuhrer, M.S. / Edmonds, M.T. / Culcer, D. / Nadeem, M. / Wang, X. / Medhekar, N. / Yin, Y. / Cole, J.H et al. | 2021
- 38.3.1
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Essential Design Criteria for Topological Electronics and Spintronicsde Coster, George J. / Gilbert, Matthew J. et al. | 2021
- 38.4.1
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Topological Semimetals for Electronic DevicesRashidi, A. / Shoron, O. F. / Goyal, Manik / Kealhofer, David A. / Stemmer, S. et al. | 2021
- 38.5.1
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Semiconductor Topological NanophotonicsOta, Y. / Arakawa, Y. / Iwamoto, S. et al. | 2021
- 38.6.1
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Symmetry-Enabled New MicrolasersFeng, Liang / Zhang, Zhifeng / Qiao, Xingdu et al. | 2021
- 39.1.1
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From reliability to security of devicesTria, Assia / Fournier, Jacques et al. | 2021
- 39.2.1
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Unified 0.75pJ/Bit TRNG and Attack Resilient 2F2/Bit PUF for Robust Hardware Security Solutions with 4-layer Stacking 3D NbOx Threshold Switching ArrayDing, Qingting / Jiang, Haijun / Li, Jing / Liu, Chao / Yu, Jie / Chen, Pei / Zhao, Yulin / Ding, Yaxin / Gong, Tiancheng / Yang, Jianguo et al. | 2021
- 39.3.1
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65nm RFSOI Power Amplifier Transistor Ageing at mm W frequencies, 14 GHz and 28 GHzDivay, A. / Forest, J. / Knopik, V. / Hai, J. / Revil, N. / Antonijevic, J. / Michard, A. / Cacho, F. / Vincent, E. / Gaillard, F. et al. | 2021
- 39.4.1
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Thorough Investigation of Low Frequency Noise Mechanisms in AlGaN/GaN and Al2O3/GaN HEMTsKammeugne, R. Kom / Theodorou, C. / Leroux, C. / Mescot, X. / Vauche, L. / Gwoziecki, R. / Becu, S. / Charles, M. / Bano, E. / Ghibaudo, G. et al. | 2021
- 39.5.1
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ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTsWu, W.-M. / Chen, S.-H. / Sibaja-Hernandez, A. / Yadav, S. / Peralagu, U. / Yu, H. / Alian, A. / Putcha, V. / Parvais, B. / Groeseneken, G. et al. | 2021
- 40.1.1
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Pseudo-Static 1T Capacitorless DRAM using 22nm FDSOI for Cryogenic Cache MemoryChakraborty, Wriddhi / Saligram, Rakshith / Gupta, Aniket / Jose, Matthew San / Aabrar, Khandker Akif / Dutta, Sourav / Khanna, Abhishek / Raychowdhury, Arijit / Datta, Suman et al. | 2021
- 40.2.1
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Overcoming the Accuracy vs. Performance Trade-off in Oscillator Ising MachinesMallick, A. / Bashar, M. K. / Truesdell, D. S. / Calhoun, B. H. / Shukla, N. et al. | 2021
- 40.3.1
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Computing with Invertible Logic: Combinatorial Optimization with Probabilistic BitsAadit, Navid Anjum / Grimaldi, Andrea / Carpentieri, Mario / Theogarajan, Luke / Finocchio, Giovanni / Camsari, Kerem Y. et al. | 2021
- 40.5.1
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High-Performance 300mm Integrated Superconducting Resonators for Quantum Computing ApplicationsMongillo, M. / Potocnik, A. / Verjauw, J. / Mohiyaddin, F.A. / Ivanov, T. / Acharya, R / Piao, X. / Lozano, D.Perez / Wan, D. / Pacco, A. et al. | 2021