The interplay of process parameters and influence on the AlN films on sapphire fabricated by DC magnetron sputtering and annealing (English)
- New search for: Liu, Huan
- Further information on Liu, Huan:
- https://orcid.org/0000-0002-2026-8253
- New search for: Guo, Wei
- Further information on Guo, Wei:
- https://orcid.org/0000-0002-6233-0529
- New search for: Liu, Huan
- Further information on Liu, Huan:
- https://orcid.org/0000-0002-2026-8253
- New search for: Guo, Wei
- Further information on Guo, Wei:
- https://orcid.org/0000-0002-6233-0529
In:
Semiconductor Science and Technology
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38
, 1
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2023
- Article (Journal) / Electronic Resource
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Title:The interplay of process parameters and influence on the AlN films on sapphire fabricated by DC magnetron sputtering and annealing
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Contributors:
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Published in:
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Publisher:
- New search for: IOP Publishing
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Publication date:2023-01-01
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Size:9 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 38, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Role of gas flow direction on monolayer MoS2 growth on patterned surfaces via CVDAras, Fikret Gonca / Yeltik, Aydan et al. | 2023
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Straightforward synthesis and mechanism insight of TiO2/α′-AgVO3 heterostructure with enhanced photocatalytic activityLiu, Yangbin / Liu, Nian / Lin, Minghua / Zhou, Yun / Ouyang, Xiaoping et al. | 2023
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Engineering the insulator-to-metal transition by tuning the population of dopant defects: first principles simulations of Se hyperdoped SiDebernardi, Alberto et al. | 2023
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Crystalline and optoelectronic properties of Ge1−x Sn x /high-Si-content-Si y Ge1−x−y Sn x double-quantum wells grown with low-temperature molecular beam epitaxyZhang, Shiyu / Shibayama, Shigehisa / Nakatsuka, Osamu et al. | 2023
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High responsivity n-ZnO nanorods/p-GaN heterojunction-based UV-A photodetectorsFrancis, Bellarmine / Sebastian, Reethu / Dixit, Tejendra / Ganapathi, K Lakshmi / Rao, M S Ramachandra et al. | 2023
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A first principles study of structural, electronic, elastic, thermal and optical properties of SiZr O3 and GeZr O3Ajay, G / Alam, Aftab / Sirajuddeen, M Mohamed Sheik et al. | 2023
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Dependence of reverse leakage on the edge termination process in vertical GaN power deviceXie, Tailang / da Silva, Cláudia / Szabó, Nadine / Mikolajick, Thomas / Wachowiak, Andre et al. | 2023
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The interplay of process parameters and influence on the AlN films on sapphire fabricated by DC magnetron sputtering and annealingLiu, Huan / Guo, Wei et al. | 2023
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LCINDEP: a novel technique for leakage reduction in FinFET based circuitsMushtaq, Umayia / Akram, Md Waseem / Prasad, Dinesh / Nagar, Bal Chand et al. | 2023
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In-situ deposition of tungsten oxide hole-contact by Hot-Wire CVD and its application in dopant-free heterojunction solar cellsGuo, Cong / Li, Junjun / Liu, Run / Zhang, Dongdong / Qiu, Junyang / Zhuang, Zihan / Chen, Yang / Qiu, Qingqing / Liu, Wenzhu / Huang, Yuelong et al. | 2023
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Influence of anti-reflection coatings on double GaAs/Si heterojunction layers in Si solar cellsSingh, Bhim / Gupta, Vivek et al. | 2023
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Design of the GaN based CAVET with SiO2–InGaN hybrid current blocking layerLi, Haiou / Kang, Dongxu / Qu, Kangchun / Liu, Xingpeng / Wan, Rongqiao et al. | 2023
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Low-temperature in situ deposited CuI-based hole-transporter for perovskite solar cells efficiency enhancementLi, Hang / Fu, Chao / Shi, Lei / Li, Chaorong / Pan, Jiaqi / Zhang, Wenjun et al. | 2023
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Design and defect study of Cs2AgBiBr6 double perovskite solar cell using suitable charge transport layersAlkhammash, Hend I / Mottakin, M / Hossen, Md Mosaddek / Akhtaruzzaman, Md / Rashid, Mohammad Junaebur et al. | 2023
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Amalgamation of rare-earth neodymium ions with ZnO nanoparticles: extensive investigations into the microstructure and optical propertiesSenthil Kumari, S / Nirmala, W / Chidhambaram, N / Prabu, M / Gobalakrishnan, S / Thirumurugan, Arun et al. | 2023
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Transitions in polycrystalline diamond probed by steady state, modulated and transient surface photovoltage spectroscopyDittrich, Thomas / Fengler, Steffen et al. | 2023
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Emission and capture characteristics of electron trap (E emi = 0.8 eV) in Si-doped β-Ga2O3 epilayerQu, Haolan / Chen, Jiaxiang / Zhang, Yu / Sui, Jin / Gu, Yitian / Deng, Yuxin / Su, Danni / Zhang, Ruohan / Lu, Xing / Zou, Xinbo et al. | 2023
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The conductivity and electrophysical characteristics of Janus-like TaSi2/Si nanoparticlesTorkhov, N A / Nomoev, A V et al. | 2023
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Sub-band gap infrared absorption in Si implanted with MgWang, Mao / Shaikh, M S / Kentsch, U / Heller, R / Zhou, Shengqiang et al. | 2023
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Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaNTadmor, Liad / Brusaterra, Enrico / Treidel, Eldad Bahat / Brunner, Frank / Bickel, Nicole / Vandenbroucke, Sofie S T / Detavernier, Christophe / Würfl, Joachim / Hilt, Oliver et al. | 2023
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Investigation of thermal stability and crystallization mechanism of Er0.03(GeTe)0.97 phase change materialGu, Han / Wu, Weihua / Xu, Shengqing / Zhou, Xiaochen / Shen, Bo / Zhai, Jiwei et al. | 2023
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Charge-plasma based symmetrical-gate complementary electron–hole bilayer TFET with improved performance for sub-0.5 V operationAnam, Aadil / Kumar, Naveen / Amin, S Intekhab / Prasad, Dinesh / Anand, Sunny et al. | 2023