Investigation of Si-Ge heterostructures by X-ray reflectometry (English)
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In:
Journal of Physics D: Applied Physics
;
26
, 4A
;
A156-A160
;
1993
- Article (Journal) / Electronic Resource
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Title:Investigation of Si-Ge heterostructures by X-ray reflectometry
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Contributors:J -M Baribeau ( author )
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Published in:Journal of Physics D: Applied Physics ; 26, 4A ; A156-A160
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Publication date:1993-04-14
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 26, Issue 4A
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- A22
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Analysis of (n,-n) and (n, -n, n) X-ray rocking curves of processed siliconM Servidori / R Fabbri et al. | 1993
- A45
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X-ray topography of lattice relaxation in strained layer semiconductors: post-growth studies and a new facility for in situ topography during MBE growthS J Barnett / C R Whitehouse / A M Keir / G F Clark / B Usher / B K Tanner / M T Emeny / A D Johnson et al. | 1993
- A76
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X-ray study of dislocation structure formation features in epitaxial systems with small mismatchI A Prokhorov / B G Zakharov / V S Man'shin / I L Shulpina et al. | 1993
- A86
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X-ray scattering topographic study of lattice-mismatched compound semiconductor heteroepitaxial layersY Suzuki / Y Chikaura / H Kii et al. | 1993
- A137
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Contrast of device structures in X-ray section topographsA J Holland / B K Tanner et al. | 1993
- A151
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X-ray scattering from multiple-layer structures forming Bragg-case interferometersB K Tanner et al. | 1993
- A167
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Structural characterization of GaAs/GaP superlatticesA Mazuelas / A Ruiz / F Ponce / F Briones et al. | 1993
- A173
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Characterization of III-V heteroepitaxial layers by X-ray diffractionO Pacherova / Z Sourek / J Kub et al. | 1993
- A181
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X-ray diffraction determination of a semiconductor epilayer unit cell oriented and distorted arbitrarilyB F Usher / G W Smith / S J Barnett / A M Keir / A D Pitt et al. | 1993
- A202
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X-ray total external reflection fluorescence study of LB films on solid substrateS I Zheludeva / M V Kovalchuk / N N Novikova / A N Sosphenov / V E Erochin / L A Feigin et al. | 1993
- A1
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The early days of high-resolution X-ray topographyA R Lang et al. | 1993
- A9
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Present status of the topography and high-resolution diffraction beamline at the ESRFJ Baruchel / A Draperi / F Zontone et al. | 1993
- A15
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Image enhancement of X-ray topographs by Fourier filteringY Epelboin / F Morris / A Rimsky et al. | 1993
- A19
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Detectors for synchrotron X-ray topographyA Koch / J P Moy / J Morse et al. | 1993
- A29
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Possibilities of X-ray interference diffractometry for the reconstruction of two-dimensional lattice deformation profiles in crystalsV V Aristov / T E Goureev / A Yu Nikulin / P V Petrashen / A A Snigirev et al. | 1993
- A32
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A novel Guinier diffractometer with automated adjustment and settingsJ Ihringer / K Rottger et al. | 1993
- A35
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Combining four-crystal seven-reflection and three-crystal five-reflection diffractometry for the characterization of ZnSe layers grown on GaAs by MOVPEE Koppensteiner / T W Ryan / M Heuken / J Sollner et al. | 1993
- A41
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X-ray focusing by the zone plate in Laue geometryA A Snigirev / A Yu Suvorov et al. | 1993
- A50
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White beam synchrotron topography and gamma -ray diffractometry characterization of the crystalline quality of single-grain superalloys: influence of the solidification conditionsD Bellet / P Bastie / J Baruchel et al. | 1993
- A53
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Towards a rigorous treatment of the wave-field propagation according to the statistical theory of dynamical diffractionF N Chukhovskii / J P Guigay et al. | 1993
- A57
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Study of the amorphization of ion-irradiated yttrium iron garnet by high-resolution diffraction techniquesJ M Costantini / F Brisard / L Autissier / M Caput / F Ravel et al. | 1993
- A62
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X-ray topographic study of defects in annealed siliconJ Gronkowski / M Lefeld-Sosnowska / E Zielinska-Rohozinska et al. | 1993
- A65
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X-ray topography studies of the defect depth profile in processed silicon wafersP J Halfpenny / G S Green / B K Tanner et al. | 1993
- A69
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Synchrotron radiation topographic study of Ti-diffused and proton-exchanged LiNbO3 single crystalsT Harasimowicz / G Materlik et al. | 1993
- A73
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Back-reflection topographic study of mixed cells in LEC-grown GaAs 0.2 at.% InF Minari / B Billia et al. | 1993
- A82
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Microdefects investigated by X-ray topographyI L Shulpina et al. | 1993
- A92
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X-ray topographic investigation of dislocations in Czochralski-grown alexandrite (BeAl2O4:Cr) single crystalQiang Zhang / Bing Hu / Piezhen Deng / Fuxi Gan et al. | 1993
- A98
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In situ observations by synchrotron white beam X-ray topography of the planar, cellular and dendritic growths of a binary alloyG Grange / C Jourdan / J Gastaldi et al. | 1993
- A102
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Comparative study of the martensitic transformations of titanium and the shape memory alloy CuZnAlC Jourdan / G Grange / J Gastaldi / S Belkahla / G Guenin et al. | 1993
- A107
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In situ surface X-ray diffraction using high-energy synchrotron radiation: studies of the ADP (100) and (101) growth interfaces under aqueous solution flow conditionsK J Roberts / J N Sherwood / K Wojciechowski / A A Chenov / Yu G Kuznetsov / R J Davey et al. | 1993
- A115
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Observation by synchrotron radiation topography of the phase coexistence at the triple point in MnPJ Sandonis / J Baruchel / J C Gomez Sal / S B Palmer / F Zontone et al. | 1993
- A120
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Synchrotron topography of phase transitions in perovskite-like crystalsM Dudley / G -D Yao et al. | 1993
- A126
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Simulation of dislocation images in Bragg-case double-crystal topographs of misfit dislocations in relaxed epitaxial layers of III-V semiconductorsS Cottrell / W Spirkl / B K Tanner et al. | 1993
- A131
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X-ray topographic contrast on dislocations with g.b=0J Gemperlova / M Polcarova / J Bradler et al. | 1993
- A142
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Characterization of quantum wells by X-ray diffractionP F Fewster et al. | 1993
- A146
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X-ray diffractometry of small defects in layered systemsV Holy / J Kubena / E Abramof / A Pesek / E Koppensteiner et al. | 1993
- A156
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Investigation of Si-Ge heterostructures by X-ray reflectometryJ -M Baribeau et al. | 1993
- A161
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X-ray scattering and topography studies of Hg1-xMnxTe epitaxial filmsT D Hallam / S K Halder / J M Hudson / C R Li / M Funaki / J E Lewis / A W Brinkman / B K Tanner et al. | 1993
- A177
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Simulation of X-ray diffraction curves from ion-implanted wafers and relaxed II-VI superlatticesA Pesek / P Kastler / L Palmetshofer / F Hauzenberger / P Juza / W Faschinger / K Lischka et al. | 1993
- A188
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Determination of strain in epitaxial semiconductor layers by high-resolution X-ray diffractionP van der Sluis et al. | 1993
- A192
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Multisite occupancy at the alkali/silicon (111) interface studied with XSWP Castrucci / S Lagomarsino / F Scarinci / C Giannini et al. | 1993
- A197
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Theoretical investigations of secondary emission yield and standing waves in curved crystals under dynamical Bragg diffraction of X-rays (Taupin problem)I A Vartanyantz / M V Kovalchuk / V M Beresovsky et al. | 1993
- A206
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X-ray standing waves in LSM for characterization of ultra-thin filmsS I Zheludeva / M V Kovalchuk / N N Novikova / A N Sosphenov et al. | 1993