A Venus-flytrap-based actuator (English)
- New search for: Volkov, Alexander G.
- Further information on Volkov, Alexander G.:
- https://orcid.org/http://orcid.org/0000-0002-6292-612X
- New search for: Volkov, Alexander G.
- Further information on Volkov, Alexander G.:
- https://orcid.org/http://orcid.org/0000-0002-6292-612X
In:
Nature Electronics
;
4
, 2
;
97
;
2021
-
ISSN:
- Article (Journal) / Electronic Resource
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Title:A Venus-flytrap-based actuator
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Additional title:Nat Electron
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Contributors:Volkov, Alexander G. ( author )
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Published in:Nature Electronics ; 4, 2 ; 97
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Publisher:
- New search for: Nature Publishing Group UK
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Place of publication:London
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Publication date:2021-02-01
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Size:1 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 4, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 91
-
Gate insulators at the limit| 2021
- 92
-
Is privacy dead?Cheney-Lippold, John et al. | 2021
- 93
-
Thin-film LEDs choose a directionThomas, Stuart et al. | 2021
- 94
-
Electronic tattoos layer upParker, Matthew et al. | 2021
- 95
-
Robust flexible electrodes with 2D interlayersKo, Seung Hwan et al. | 2021
- 97
-
A Venus-flytrap-based actuatorVolkov, Alexander G. et al. | 2021
- 98
-
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materialsKnobloch, Theresia / Illarionov, Yury Yu. / Ducry, Fabian / Schleich, Christian / Wachter, Stefan / Watanabe, Kenji / Taniguchi, Takashi / Mueller, Thomas / Waltl, Michael / Lanza, Mario et al. | 2021
- 109
-
Transistors and logic circuits based on metal nanoparticles and ionic gradientsZhao, Xing / Yang, Liu / Guo, Jiahui / Xiao, Tao / Zhou, Yi / Zhang, Yuchun / Tu, Bin / Li, Tiehu / Grzybowski, Bartosz A. / Yan, Yong et al. | 2021
- 116
-
Hall effects in artificially corrugated bilayer graphene without breaking time-reversal symmetryHo, Sheng-Chin / Chang, Ching-Hao / Hsieh, Yu-Chiang / Lo, Shun-Tsung / Huang, Botsz / Vu, Thi-Hai-Yen / Ortix, Carmine / Chen, Tse-Ming et al. | 2021
- 126
-
Strain-resilient electrical functionality in thin-film metal electrodes using two-dimensional interlayersCho, Chullhee / Kang, Pilgyu / Taqieddin, Amir / Jing, Yuhang / Yong, Keong / Kim, Jin Myung / Haque, Md Farhadul / Aluru, Narayana R. / Nam, SungWoo et al. | 2021
- 134
-
An on-demand plant-based actuator created using conformable electrodesLi, Wenlong / Matsuhisa, Naoji / Liu, Zhiyuan / Wang, Ming / Luo, Yifei / Cai, Pingqiang / Chen, Geng / Zhang, Feilong / Li, Chengcheng / Liu, Zhihua et al. | 2021
- 143
-
Strain-insensitive intrinsically stretchable transistors and circuitsWang, Weichen / Wang, Sihong / Rastak, Reza / Ochiai, Yuto / Niu, Simiao / Jiang, Yuanwen / Arunachala, Prajwal Kammardi / Zheng, Yu / Xu, Jie / Matsuhisa, Naoji et al. | 2021
- 151
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In situ learning using intrinsic memristor variability via Markov chain Monte Carlo samplingDalgaty, Thomas / Castellani, Niccolo / Turck, Clément / Harabi, Kamel-Eddine / Querlioz, Damien / Vianello, Elisa et al. | 2021
- 162
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A hybrid III–V tunnel FET and MOSFET technology platform integrated on siliconConvertino, Clarissa / Zota, Cezar B. / Schmid, Heinz / Caimi, Daniele / Czornomaz, Lukas / Ionescu, Adrian M. / Moselund, Kirsten E. et al. | 2021