Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications (English)
- New search for: Rossnagel, S.M.
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In:
Journal of Vacuum Science and Technology, Part B (Microelectronics and Nanometer Structures)
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14
, 3
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1819-1827
;
1996
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ISSN:
- Article (Journal) / Print
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Title:Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications
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Additional title:Dünnschichtabscheidung mit hohem Atomgewicht für Diffusionsbarrieren, Adhäsionsschichten und Keimschichtanwendungen
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Contributors:Rossnagel, S.M. ( author ) / Nichols, C. ( author ) / Hamaguchi, S. ( author ) / Ruzic, D. ( author ) / Turkot, R. ( author )
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Published in:
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Publisher:
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Publication date:1996
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Size:9 Seiten, 19 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:Adhäsion , Tantal , Niederdruck , Beschichten , Diffusionsschicht , Verbindungsnetzwerk , Metallisieren , Metallschicht , dünne Schicht , Zerstäubung , Keimbildung , Magnetron , Reflexionsvermögen , Atom , Verbindung integrierter Schaltungen , Metallisieren integrierter Schaltungen , metallische Dünnschicht , Sputterabscheidung
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Source:
Table of contents – Volume 14, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1600
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Scanning force microscopy study of the surface topography of thin BaTiO3 films deposited by pulsed laser ablationZhang, J. / Szabadi, M. / Hess, P. et al. | 1996
- 1607
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Cross-sectional scanning tunneling spectroscopy of cleaved, silicon-based metal-oxide-semiconductor junctionsThibado, P.M. / Mercer, T.W. / Fu, Shelton / Egami, T. / DiNardo, N.J. / Bonnell, D.A. et al. | 1996
- 1630
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Application of time-resolved scanning electron microscopy to the analysis of the motion of micromechanical structuresOgo, I. / MacDonald, N.C. et al. | 1996
- 1642
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Nanometer-scale lithography on Si(001) using adsorbed H as an atomic layer resistAdams, D.P. / Mayer, T.M. / Swartzentruber, B.S. et al. | 1996
- 1660
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Epitaxial growth of Si1-x-yGexCy alloy layers on (100) Si by rapid thermal chemical vapor deposition using methylsilaneJian Mi / Warren, P. / Gailhanou, M. / Ganiere, J.D. / Dutoit, M. / Jouneau, P.H. / Houriet, R. et al. | 1996
- 1670
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Buried-gate oxide thinning during epitaxial lateral overgrowth for dual-gated metal-oxide-semiconductor field-effect transistorsWatts, J.S. / Neudeck, G.W. et al. | 1996
- 1675
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Characterization of Si1-xGex epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactorLafontaine, H. / Houghton, D.C. / Elliot, D. / Rowell, N.L. / Baribeau, J.M. / Laframboise, S. / Sproule, G.I. / Rolfe, S.J. et al. | 1996
- 1682
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Microwave plasma nitridation of Si(100), Ge(100), and Si1-xGex surfaces: a comparative studyMukhopadhyay, M. / Ray, S.K. / Maiti, C.K. et al. | 1996
- 1687
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In situ investigation of the passivation of Si and Ge by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiO2Wang, Y. / Hu, Y.Z. / Irene, E.A. et al. | 1996
- 1702
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Analysis of Fourier transform infrared spectra and peak shifts in plasma-enhanced chemical vapor deposited fluorinated silica glassesSwope, R. / Woo Sik Yoo et al. | 1996
- 1706
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Structural and electrical characterization of TiO2 grown from titanium tetrakis-isopropoxide (TTIP) and TTIP/H2O ambientsYan, J. / Gilmer, D.C. / Campbell, S.A. / Gladfelter, W.L. / Schmid, P.G. et al. | 1996
- 1712
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Silicon dioxide passivation of InP/InGaAs metal-semiconductor-metal photodetectorsKollakowski, S. / Schade, U. / Bottcher, E.H. / Kuhl, D. / Bimberg, D. / Ambree, P. / Wandel, K. et al. | 1996
- 1719
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Molecular-beam epitaxy of high quality lattice matched In1-x-yGaxAlyAs epitaxial layers on InP substratesChua, S.J. / Ramam, A. et al. | 1996
- 1725
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Basic analysis of atomic-scale growth mechanisms for molecular beam epitaxy of GaAs using atomic hydrogen as a surfactantOkada, Y. / Harris, J.S. jun. et al. | 1996
- 1729
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Antimony doped GaAs: role of the isoelectronic dopant in defect evolutionPaskova, T. / Valcheva, E. / Yakimova, R. et al. | 1996
- 1736
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All solid source molecular beam epitaxy growth and characterization of strain-compensated 1.3 mu m InAsP/InGaP/InP multiquantum well lasers for high-temperature operationToivonen, M. / Savolainen, P. / Asonen, H. / Murison, R. et al. | 1996
- 1739
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Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxyLeo, G. / Longo, M. / Lovergine, N. / Mancini, A.M. / Vasanelli, L. / Drigo, A.V. / Romanato, F. / Peluso, T. / Tapfer, L. et al. | 1996
- 1745
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Effects of low-temperature-grown GaAs and AlGaAs on the current of a metal-insulator-semiconductor structureChen, C.L. / Mahoney, L.J. / Nichols, K.B. / Manfra, M.J. / Brown, E.R. / Nitishin, P.M. / Molvar, K.M. / Gramstorff, B.F. / Murphy, R.A. et al. | 1996
- 1752
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Comparison of masking materials for high microwave power CH4/H2Ar etching of III-V semiconductorsLee, J.W. / Crockett, R.V. / Pearton, S.J. et al. | 1996
- 1758
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BCl3/N2 dry etching of InP, InAlP, and InGaPRen, F. / Lothian, J.R. / Kuo, J.M. / Hobson, W.S. / Lopata, J. / Caballero, J.A. / Pearton, S.J. / Cole, M.W. et al. | 1996
- 1764
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Smooth etching of various III/V and II/VI semiconductors by Cl2 reactive ion beam etchingYoshikawa, T. / Sugimoto, Y. / Sakata, Y. / Takeuchi, T. / Yamamoto, M. / Hotta, H. / Kohmoto, S. / Asakawa, K. et al. | 1996
- 1773
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Influence of CH4/H2 reactive ion etching on the deep levels of Si-doped AlxGa1-xAs (x=0.25)Pereira, R.G. / Van Hove, M. / Potter, M. de / Van Rossum, M. et al. | 1996
- 1780
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Low temperature chemically assisted ion-beam etching processes using Cl2, CH3I, and IBr3 to etch InP optoelectronic devicesEisele, K.M. / Daleiden, J. / Ralston, J. et al. | 1996
- 1784
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Fringe stabilization and depth monitoring during the holographic photoelectrochemical etching of n-InP (100) substratesSoltz, D. / De Paoli, M.A. / Cescato, L. et al. | 1996
- 1791
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High rate and highly selective anisotropic etching for WSix/poly-Si using electron cyclotron resonance plasmaNojiri, K. / Tsunokuni, K. / Yamazaki, K. et al. | 1996
- 1807
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In situ fiber optic thermometry of wafer surface etched with an electron cyclotron resonance sourceThomas, S. III / Berg, E.W. / Pang, S.W. et al. | 1996
- 1812
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Effects of surface cleaning on electrical properties for Ni contacts to p-type ZnSeIshikawa, H. / Tsukui, K. / Koide, Y. / Teraguchi, N. / Tomomura, Y. / Suzuki, A. / Murakami, M. et al. | 1996
- 1819
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Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applicationsRossnagel, S.M. / Nichols, C. / Hamaguchi, S. / Ruzic, D. / Turkot, R. et al. | 1996
- 1828
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Chemical vapor deposition of copper from CuI hexafluoroacetylacetonate trimethylvinylsilane for ultralarge scale integration applicationsBraeckelmann, G. / Manger, D. / Burke, A. / Peterson, G.G. / Kaloyeros, A.E. / Reidsema, C. / Omstead, T.R. / Loan, J.F. / Sullivan, J.J. et al. | 1996
- 1837
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Film property comparison of Ti/TiN deposited by collimated and uncollimated physical vapor deposition techniquesWang, Shi-Qing / Schlueter, J. et al. | 1996
- 1846
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Step coverage comparison of Ti/TiN deposited by collimated and uncollimated physical vapor deposition techniquesWang, Shi-Qing / Schlueter, J. / Gondran, C. / Boden, T. et al. | 1996
- 1853
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Cu metallization using a permanent magnet electron cyclotron resonance microwave plasma/sputtering hybrid systemGorbatkin, S.M. / Poker, D.B. / Rhoades, R.L. / Doughty, C. / Berry, L.A. / Rossnagel, S.M. et al. | 1996
- 1864
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Calculation of etching profile in the photolithographic process on As2S3 thin filmsMamedov, S. / Kisliuk, A. et al. | 1996
- 1870
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Versatile sample handling system for scanning tunneling microscopy studies of molecular beam epitaxyWhitman, L.J. / Thibado, P.M. / Linker, F. / Patrin, J. et al. | 1996