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Robust posture measurement and identification of soccer robots
National licenceIOP Institute of Physics | 2003| -
Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides
PaperIOP Institute of Physics | 2015| -
Influence of impurity-free vacancy diffusion on the optical and optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells electroabsorption modulator structure
National licenceIOP Institute of Physics | 2005| -
Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention
National licenceIOP Institute of Physics | 2008| -
An automatic form error evaluation method for characterizing micro-structured surfaces
National licenceIOP Institute of Physics | 2011| -
Current conduction in bound-to-miniband transition III-V multiquantum well/superlattice infrared photodetectors
National licenceIOP Institute of Physics | 1993| -
Impact of carbon nanotube pattern layers on gallium nitride-based light emitting diodes
PaperIOP Institute of Physics | 2020| -
Quantised dissipative states at breakdown of the quantum Hall effect
National licenceIOP Institute of Physics | 1990| -
Nitride-based MIS-like diodes with semi-insulating Mg-doped GaN cap layers
National licenceIOP Institute of Physics | 2006| -
Absolute calibration of a time-of-flight spectrometer and imaging plate for the characterization of laser-accelerated protons
National licenceIOP Institute of Physics | 2009| -
Fabrication of periodic microstructures by holographic photopolymerization with a low-power continuous-wave laser of 532 nm
National licenceIOP Institute of Physics | 2006| -
Effect of lanthanoid organometallic compounds on holographic storage characteristics of doped PQ/poly(hydroxyethyl methacrylate-co-methyl methacrylate) hybrids
National licenceIOP Institute of Physics | 2009| -
Low voltage stress-induced leakage current as a probe of interface defects and a monitor of the oxide reliability
National licenceIOP Institute of Physics | 2005| -
High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD
National licenceIOP Institute of Physics | 2011| -
Influence of p-doping hole transport layer on the performance of organic light-emitting devices
National licenceIOP Institute of Physics | 2008| -
THz transient photoconductivity of the III–V dilute nitride GaPyAs1−y−xNx
Free accessPaperIOP Institute of Physics | 2018| -
Deep level transient spectroscopy of DX centres in Al0.38Ga0.62As:Te under uniaxial stress
National licenceIOP Institute of Physics | 1991| -
Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitride
PaperIOP Institute of Physics | 2018| -
Correlation of contact resistance with metal diffusion for oxidized Au/Ni/p-GaN contacts studied using Rutherford backscattering spectroscopy
National licenceIOP Institute of Physics | 2006| -
High-speed (>10 Gbps) 850 nm oxide-confined vertical cavity surface emitting lasers (VCSELs) with a planar process and reduced parasitic capacitance
National licenceIOP Institute of Physics | 2004|
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