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Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators
Free accessTopical ReviewIOP Institute of Physics | 2018| -
Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors
Topical ReviewIOP Institute of Physics | 2017| -
Conductive bridging random access memory—materials, devices and applications
Topical ReviewIOP Institute of Physics | 2016| -
Surface acoustic wave devices for sensor applicationsProject supported by the National Natural Science Foundation of China (Nos. 60936002, 61025021, 61434001, 61574083), the State Key Development Program for Basic Research of China (No. 2015CB352100), the National Key Project of Science and Technology (No. 2011ZX02403-002) and the Special Fund for Agroscientific Research in the Public Interest of China (No. 201303107). M.A.M is additionally supported by the Postdoctoral Fellowship (PDF) program of the Natural Sciences and Engineering Research Council (NSERC) of Canada and the China Postdoctoral Science Foundation (CPSF).
Invited Review PapersIOP Institute of Physics | 2016| -
Recent progress in organic electrodes for zinc-ion batteries
PaperIOP Institute of Physics | 2020| -
Flexible diodes for radio frequency (RF) electronics: a materials perspective
Free accessTopical ReviewIOP Institute of Physics | 2017| -
Review on performance analysis of P3HT:PCBM-based bulk heterojunction organic solar cells
PaperIOP Institute of Physics | 2021| -
Scalable manufacturing of boron nitride nanotubes and their assemblies: a review
Topical ReviewIOP Institute of Physics | 2017| -
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals
PaperIOP Institute of Physics | 2016| -
Van der Waals heterojunction ReSe2/WSe2 polarization-resolved photodetector
PaperIOP Institute of Physics | 2021| -
Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h
PaperIOP Institute of Physics | 2019| -
Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides
Invited ReviewIOP Institute of Physics | 2014| -
Advances in group III-nitride-based deep UV light-emitting diode technology
National licenceIOP Institute of Physics | 2011| -
Shaping the spectrum of terahertz photoconductive antenna by frequency-dependent impedance modulation
PaperIOP Institute of Physics | 2019|
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