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Optical characterization of strained InGaAsN/GaAs multiple quantum wells
American Institute of Physics | 2002| -
Process window and mechanism of surface property enhancement of 9Cr18 steel using plasma immersion ion implantation
American Institute of Physics | 1999| -
Practical design of the electron gun for a microfocus x-ray sourcea)
American Institute of Physics | 2017| -
Electrical transport in GaN nanowires grown by selective epitaxy
American Institute of Physics | 2009| -
Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix
American Institute of Physics | 2008| -
Modeling and experimental analysis of microburr formation considering tool edge radius and tool-tip breakage in microend milling
American Institute of Physics | 2009| -
Influence of diamond film thickness on field emission characteristics
American Institute of Physics | 2000| -
Effect of spontaneous and piezoelectric polarization on intersubband transition in quantum well
American Institute of Physics | 2004| -
Photoluminescence of as-grown and thermally annealed InGaAsN/GaAs quantum wells grown by molecular beam epitaxy
American Institute of Physics | 1999| -
Simulation of dose uniformity for different pulse durations during inner surface plasma immersion ion implantation
American Institute of Physics | 1999| -
Field emission characteristics of diamond films with different surface morphologies
American Institute of Physics | 1999| -
High performance 1.3 μm InGaAsN:Sb/GaAs quantum well lasers grown by molecular beam epitaxy
American Institute of Physics | 2000| -
Low temperature growth of amorphous Si nanoparticles in oxide matrix for efficient visible photoluminescence
American Institute of Physics | 2004| -
Structural and electrical properties of chemical vapor deposited diamond films doped by implantation
American Institute of Physics | 2000| -
Enhancement of Hall mobility in coupled δ‐doped layers grown by molecular‐beam epitaxy
American Institute of Physics | 1993| -
Back-gated milliampere-class field emission device based on carbon nanosheets
American Institute of Physics | 2006| -
Molecular beam epitaxy growth of InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer
American Institute of Physics | 1997|
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