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Effect of ion sputtering on interface chemistry and electrical properties of Au GaAs(100) Schottky contacts
American Institute of Physics | 1984| -
Surface structure and bonding of the cleavage faces of tetrahedrally coordinated II–VI compounds
American Institute of Physics | 1988| -
Chemically responsive molecular transistors fabricated by self-aligned lithography and chemical self-assembly
American Institute of Physics | 2006| -
Surface rotational phonons on the cleavage faces of tetrahedrally coordinated compound semiconductors
American Institute of Physics | 1989| -
Metal contact formation by microdeposition of nondestructive particles from focused ion beam sputtering
American Institute of Physics | 2007| -
In situ investigation of the passivation of Si and Ge by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiO2
American Institute of Physics | 1996| -
Imaging microanalysis of surfaces with a focused gallium probe
American Institute of Physics | 1988| -
Focused ion beam microlithography using an etch‐stop process in gallium‐doped silicon
American Institute of Physics | 1983| -
Surface morphologies of GaAs layers grown by arsenic‐pressure‐controlled molecular beam epitaxy
American Institute of Physics | 1986| -
Low temperature growth of amorphous Si nanoparticles in oxide matrix for efficient visible photoluminescence
American Institute of Physics | 2004| -
Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates
American Institute of Physics | 2005| -
Orogenic movement mechanism for the formation of symmetrical relief features in copper nitride thin films
American Institute of Physics | 2007| -
ZnMgSSe/ZnSSe/CdZnSe strained quantum well lasers grown on (511)A
American Institute of Physics | 1995| -
Electroreflectance and photoreflectance studies of surface Fermi level and surface state densities of InP structures
American Institute of Physics | 2000| -
Erratum: Focused ion beam microlithography using an etch‐stop process in gallium‐doped silicon [J. Vac. Sci. Technol. B 1, 1056 (1983)]
American Institute of Physics | 1984| -
Implementing multiple band gaps using inductively coupled argon plasma enhanced quantum well intermixing
American Institute of Physics | 2005| -
Ultraviolet photoluminescence in Gd-doped silica and phosphosilicate fibers
Free accessAmerican Institute of Physics | 2017|
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