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Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
Free accessTopical ReviewIOP Institute of Physics | 2016| -
A chlorinated copolymer donor demonstrates a 18.13% power conversion efficiency
PaperIOP Institute of Physics | 2021| -
β-Ga2O3 for wide-bandgap electronics and optoelectronics
Topical ReviewIOP Institute of Physics | 2018| -
Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues
Topical ReviewIOP Institute of Physics | 2018| -
A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications
Topical ReviewIOP Institute of Physics | 2017| -
Synthesis and characterization of ZnO–CuO nanocomposites powder by modified perfume spray pyrolysis method and its antimicrobial investigation
PaperIOP Institute of Physics | 2018| -
How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches
Topical ReviewIOP Institute of Physics | 2018| -
An introduction to InP-based generic integration technology
Free accessInvited ReviewIOP Institute of Physics | 2014| -
A comprehensive device modelling of perovskite solar cell with inorganic copper iodide as hole transport material
PaperIOP Institute of Physics | 2018| -
A review of the electrical properties of semiconductor nanowires: insights gained from terahertz conductivity spectroscopy
Free accessTopical ReviewIOP Institute of Physics | 2016| -
Self-charging power textiles integrating energy harvesting triboelectric nanogenerators with energy storage batteries/supercapacitors
IOP Institute of Physics | 2021| -
Recent progress of flexible and wearable strain sensors for human-motion monitoring Project supported by the NNSF of China (Nos. 61525402, 61604071), the Key University Science Research Project of Jiangsu Province (No. 15KJA430006), and the Natural Science Foundation of Jiangsu Province (No. BK20161012).
PaperIOP Institute of Physics | 2018|
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